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2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET November 1996 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier Outline TO-3P D 1 G 2 S 3 1. Gate 2. Source (Flange) 3. Drain 2SK1056, 2SK1057, 2SK1058 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1056 Symbol Ratings Unit VDSX 120 V 2SK1057 140 2SK1058 160 Gate to source voltage VGSS ±15 V Drain current ID 7 A Body to drain diode reverse drain current IDR 7 A 100 W 1 Channel dissipation Pch* Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1056 V(BR)DSX 120 2SK1057 140 2SK1058 160 Typ Max Unit Test conditions — — V ID = 10 mA, VGS = –10 V Gate to source breakdown voltage V(BR)GSS ±15 — — V IG = ±100 µA, VDS = 0 Gate to source cutoff voltage VGS(off) 0.15 — 1.45 V ID = 100 mA, VDS = 10 V Drain to source saturation voltage VDS(sat) — — 12 V ID = 7 A, VGD = 0 * Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A, VDS = 10 V * Input capacitance Ciss — 600 — pF VGS = –5 V, VDS = 10 V, f = 1 MHz Output capacitance Coss — 350 — pF Reverse transfer capacitance Crss — 10 — pF Turn-on time ton — 180 — ns Turn-off time toff — 60 — ns Note 2 1. Pulse test 1 VDD = 20 V, ID = 4 A, 1 2SK1056, 2SK1057, 2SK1058 Maximum Safe Operation Area Power vs. Temperature Derating 20 Ta = 25°C 10 Drain Current ID (A) ID max (Continuous) P PW 5 PW W = = 1 10 0 m = 0 s 1 m 1 s s sh 1 2 1 ot sh sh ot ot 1.0 n tio ra pe O (T C = ) °C 25 50 C 100 D 0.5 2SK1056 0 50 100 Case Temperature TC (°C) 0.2 5 150 Typical Output Characteristics 10 20 50 100 200 500 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 10 1.0 TC = 25°C 0.8 7 6 6 5 4 4 Pch = 3 2 100 W VDS = 10 V T C= Drain Current ID (A) VGS = 10 V 9 8 8 Drain Current ID (A) 2SK1057 2SK1058 –2 5°C 25 75 Channel Dissipation Pch (W) 150 0.6 0.4 0.2 2 1 0 0 10 20 30 40 50 Drain to Source Voltage VDS (V) 0 Drain to Source Saturation Voltage vs. Drain Current 5 VGD = 0 Drain to Source Voltage vs. Gate to Source Voltage 10 C 5° 25 ,7 °C Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage VDS (on) (V) 10 °C 25 TC =– 2 1.0 0.5 0.2 0.1 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 6 5A 4 2 0 500 200 VDS = 10 V f = 1 MHz 100 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) 2A ID = 1 A 2 4 6 8 10 Gate to Source Voltage VGS (V) Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (S) Input Capacitance Ciss (pF) 1000 TC = 25°C 8 Input Capacitance vs. Gate Source Voltage 0 0.4 0.8 1.2 1.6 2.0 Gate to Source Voltage VGS (V) 3.0 1.0 0.3 0.1 0.03 0.01 0.003 10 k TC = 25°C VDS = 10 V ID = 2 A 30 k 100 k 300 k 1 M 3 M Frequency f (Hz) 10 M 3 2SK1056, 2SK1057, 2SK1058 Switching Time vs. Drain Current Switching Time ton,toff (ns) 500 t on 200 100 50 t off 20 10 5 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 Switching Time Test Circuit Output RL Input PW = 50µs duty ratio =1% 20 V 50 Ω Waveforms 90 % Input 10 % t on t off 10 % Output 90 % 4 2SK1056, 2SK1057, 2SK1058 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5