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About SILTECTRA SILTECTRA is the leading technology specialist for kerf-less wafering processes at low temperatures. The procedure is a newly-designed platform technology for manufacturing wafers that can be used in various industries for a wide variety of brittle materials. Since 2010 the company has developed processes for the manufacturing of wafers through splitting and has tailored the wafers to the specific applications in the semiconductor industry. SILTECTRA significantly reduces process costs and process times for the various semiconductor materials as well as semi-finished parts, and allows for an optimized use of resources. In addition, SILTECTRA KERF-FREE WAFERING TECHNOLOGY develops automated solutions for the industry to integrate this innovative procedure into pre-existing production processes. SILTECTRA collaborates with selected scientific institutes for semiconductor technology, photovoltaic, material science and fracture mechanics, and cooperates with industry leaders in the photovoltaic and LED sectors to develop procedures that are tailored to the market and adapts them to each customer’s specific requirements. At its Dresden headquarters SILTECTRA developed an innovative production process for mono-crystalline wafers and other brittle materials based on a chemical-physical procedure where thermal stress produces forces that split the crystal along the desired plane. Company founder Dr. Lukas Lichtensteiger of Harvard University in Boston, Massachusetts discovered the kerf-less procedure that separates wafers without any material loss. The process was patented in 2008 and since then, SILTECTRA has applied for several other patents. Innovative deep temperature technologies for splitting brittle materials Siltectra GmbH Manfred-von-Ardenne-Ring 20 | Bldg. E | D-01099 Dresden | Germany Phone: +49 (0) 351 8925 - 730 | E-Mail: [email protected] | www.siltectra.com Amtsgericht Dresden HRB 28951 | USt-IdNr.: DE271779981 | Managing Director: Dr. Wolfram Drescher Commerzbank Dresden | IBAN: DE18 8504 0000 0204 1036 00 | BIC/SWIFT: COBADEFFXXX KERF-FREE WAFERING TECHNOLOGY www.siltectra.com Wafering In 2012 close to 60 million square centimeters of silicon semiconductor wafers were sold worldwide, equaling a sales volume of 9 billion USD. The current market volume for silicon carbide is 80 million USD, which is relatively small. The semiconductor material, however, is gaining more and more importance, because silicon carbide is a better heat conductor than silicon and has superior electrical properties for optical and power semiconductors. Gallium nitride is also an important semiconductor material for power electronics. It currently is not used SILTECTRA technology creates wafers of diverse semiconductor materials without any raw material loss – the so-called kerf-loss – and without damaging the wafer surface. The wafers can be produced much thinner than the traditional sawing process, making it possible to create wafers from expensive materials such as gallium nitride (GaN) or silicon carbide (SiC) at various thicknesses and sizes: from a 2 inch gallium nitride wafer to the 450 millimeter silicon wafer, there is no limit to its technology applications. Photovoltaic By utilizing this new procedure, new applications and market segments become possible. The SILTECTRA method pushes the boundaries of technology since the manufacturing of the next three years gallium nitride’s market volume is expected to increase to 500 million USD. Different from conventional wafering which uses special saws, the SILTECTRA process does not cause any raw material loss, also called kerf-loss. This, along with providing a significantly higher yield, reduces recycling costs, which can be cost-intensive and often strictly regulated especially recycling production waste of materials such as gallium arsenide (GaAs) or silicon carbide. output of more than 100 Gigawatt peak (GWp) have been installed. By 2020, the German Solar Industry Association (BSW) expects the worldwide installed power output to be at least five times its current size. In 2012 the international photovoltaic market had a sales volume of almost 59 billion Euro. very much, since its production is very cost-and-time intensive, but according to market research, within To date, worldwide photovoltaic units with a power semiconductor wafers is no longer limited by the thickness of the saw-wire, thus producing much thinner wafers. As in silicon carbide – very often, thinner wafers feature different physical properties, which can make new applications possible. WAFERING When producing a silicon solar cell, creating the silicon wafer takes up a large part – currently 60 percent – of the manufacturing cost. The SILTECTRA method splits silicon wafers without any material loss, which reduces the manufacturing cost by up to 30 percent. Worldwide, solar panels with a total power output of 30 Gigawatt peak (GWp) are installed yearly. Due to fierce international competition, plans to reduce the manufacturing cost are in high demand. Thinning FRONT-END The SILTECTRA procedure also allows semifinished cells to be processed. The cells are processed on both sides and split after doping, which reduces front-end manufacturing costs by up to 50 percent – in addition to the aforementioned material savings. Furthermore, the fracture rate is significantly lower since the wafers, while being processed, are double the thickness than conventional solar wafers. BACK-END (APPLICATIONS) Along with savings on process materials such as chemicals and savings on reduced handlingtime, the clean and reflective wafer opens new back-end application possibilities. For specific solar cell types, metallization becomes unnecessary or can be reduced. (Metallizing solar cells accounts for approximately 30 percent of the process cost.) The market for consumable supplies for Chemical and Mechanical Polish (CMP) has a sales volume of more than 2.3 billion USD, with an upward trend. Polishing discs accounts for 27 percent of this sum, and polishing paste and chemicals make up the remainder. Almost two thirds of the polishing discs are produced for the processing of 300 millimeter wafers. A significant cost driver in the manufacturing of semiconductor wafers and devices is the thinning of the wafer to prepare it for its later applications. Usually the wafer is processed first and, before any further processing can be performed, needs to be thinned in a complex grinding and polishing procedure. This ‘thinning’ of wafers is enormously time-and-cost intensive. (LED), for instance, these substrates are responsible for up to 60 percent of the entire production cost. In case of silicon carbide LEDs, material cost accounts for 60 percent of the entire production cost. The thinning process is time consuming and causes expensive raw material waste that either needs to be recycled or requires expensive disposal. Thinning gallium arsenide (GaAs) wafers, for instance, generates a toxic sludge that, due to its arsenic content, requires recycling while, at the same time, the precious gallium needs to be regained from the waste. This process also requires large amounts of toxic chemicals. The time-and-cost-saving SILTECTRA method makes it possible to thin wafers from gallium arsenide by splitting off the desired layer, which produces neither chips nor sludge. Occasionally complete backing layers that are only a vehicle for the manufacturing of the actual component, are being removed. In the manufacturing of Light Emitting Diodes The SILTECTRA method also significantly reduces the time required to make wafers thinner, with additional savings on production means such as abrasives and polishing discs.