Download tip31, tip31a, tip31b, tip31c npn silicon power transistors

TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
●
JULY 1968 - REVISED MARCH 1997
Designed for Complementary Use with the
TIP32 Series
TO-220 PACKAGE
(TOP VIEW)
●
40 W at 25°C Case Temperature
●
3 A Continuous Collector Current
B
1
●
5 A Peak Collector Current
C
2
●
Customer-Specified Selections Available
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
TIP31
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
TIP31A
TIP31B
VCBO
100
120
TIP31C
140
40
TIP31A
TIP31B
VCEO
TIP31C
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
UNIT
80
TIP31
Emitter-base voltage
NOTES: 1.
2.
3.
4.
VALUE
60
80
V
V
100
V EBO
5
V
IC
3
A
ICM
5
A
IB
1
A
Ptot
40
W
Ptot
2
W
½LIC 2
32
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
250
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V (BR)CEO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
TEST CONDITIONS
Collector-emitter
breakdown voltage
IC = 30 mA
MIN
IB = 0
(see Note 5)
TIP31
40
TIP31A
60
TIP31B
80
TIP31C
100
TYP
MAX
V
VCE = 80 V
VBE = 0
TIP31
0.2
Collector-emitter
V CE = 100 V
V BE = 0
TIP31A
0.2
cut-off current
V CE = 120 V
V BE = 0
TIP31B
0.2
V CE = 140 V
V BE = 0
TIP31C
0.2
Collector cut-off
VCE = 30 V
IB = 0
TIP31/31A
0.3
current
V CE = 60 V
IB = 0
TIP31B/31C
0.3
VEB =
IC = 0
Emitter cut-off
current
5V
UNIT
1
mA
mA
mA
Forward current
VCE =
4V
IC =
1A
transfer ratio
V CE =
4V
IC =
3A
IB = 375 mA
IC =
3A
(see Notes 5 and 6)
1.2
V
VCE =
4V
IC =
3A
(see Notes 5 and 6)
1.8
V
VCE =
10 V
IC = 0.5 A
f = 1 kHz
20
VCE =
10 V
IC = 0.5 A
f = 1 MHz
3
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
(see Notes 5 and 6)
25
10
50
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
3.125
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
†
MIN
ton
Turn-on time
IC = 1 A
IB(on) = 0.1 A
IB(off) = -0.1 A
toff
Turn-off time
V BE(off) = -4.3 V
RL = 30 Ω
tp = 20 µs, dc ≤ 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
TYP
0.5
µs
2
µs
TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS631AA
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
0·001
0·01
0·1
1·0
10
TCS631AB
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
1·0
0·1
IC = 100 mA
IC = 300 mA
IC = 1 A
IC = 3 A
0·01
0·1
IC - Collector Current - A
1·0
10
100
1000
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·0
TCS631AC
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
10
IC - Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS631AA
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
10
1·0
0·1
TIP31
TIP31A
TIP31B
TIP31C
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AA
Ptot - Maximum Power Dissipation - W
50
40
30
20
10
0
0
25
50
75
100
TC - Case Temperature - °C
Figure 5.
PRODUCT
4
INFORMATION
125
150
TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
MDXXBE
INFORMATION
5
TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
6
INFORMATION
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Datasheets for electronics components.