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INSTITUT TEKNOLOGI BANDUNG
SEKOLAH TEKNIK ELEKTRO DAN INFORMATIKA
Jl. Ganesha 10, Gedung Achmad Bakrie, Labtek. VIII Lantai 2, Bandung 40132; Telp: +6222 2502260
IP Phone: +6222 4254028, Fax: +6222 2534222 e-mail: [email protected] http://www.stei.itb.ac.id
Undangan Kuliah Tamu
Bidang Advanced Electronic Devices & Materials
Dengan hormat,
Kelompok Bidang Keilmuan Elektronika, Sekolah Teknik Elektro dan Informatika (KK-Elektronika,
STEI) ITB) mengundang kehadiran para akademisi, peneliti, serta mahasiswa (S3, S2, dan S1) dari
berbagai perguruan tinggi / instansi dari bidang yang terkait untuk menghadiri kuliah tamu yang akan
diselenggarakan pada
Hari / Tanggal
Waktu
Tempat
: Jum’at / 16 Agustus 2013
: 09.00 – 11.00 WIB
: Ruang Multimedia STEI ITB
Gd. Achmad Bakrie / Labtek VIII Lt. 2
Sebagai pembicara dalam kuliah tamu ini adalah Prof. Paul Berger, distinguished lecturer (IEEE)
dari Ohio-State University yang akan membahas 2 (dua) buah topik utama: (1) Plastic SmartCards
Using Quantum Tunneling Electronics dan (2) Manufacturable Passive Millimeter-Wave Imaging
Detectors and Nitride Tunneling for Terahertz
Atas perhatian dan kerjasama yang baik, kami ucapkan terima kasih.
Koordinator Kuliah Tamu/Host,
Hormat kami,
Ketua KK Elektronika,
ttd
ttd
Dr. Ir. Basuki R. Alam
Trio Adiono., ST., MT., Ph.D
Plastic SmartCards Using Quantum Tunneling Electronics
Paul R. Berger
Department of Electrical and Computer Engineering/Department of
Physics
The Ohio State University, Columbus, OH 43210
Quantum functional circuitry exploiting negative differential
resistance (NDR) devices offers a paradigm shift in computational
architectures for a multitude of circuitries (low-power embedded memory,
mixed-signal and logic), that enables continued Si/SiGe scaling according
to Moore’s Law. The advantage of quantum functional circuits is
illustrated by the N-shaped electrical characteristics of two serially
connected NDR devices which can be exploited to easily fashion two
stable latching points. The requirement of an NDR device for these circuit topologies is room
temperature NDR operation with a reasonably high peak-to-valley current ratio (PVCR) [≥ 3]. NDRbased circuitry facilitates simple circuit topologies to fashion latches etc., permitting tunnel
diode/transistor circuits that require fewer devices, less chip area and reduced power consumption.
Already, preliminary work has demonstrated tunnel diode static random access memory (TSRAM)
that operates below 0.5 volts and only requires a 0.3 voltage swing! TSRAM is DRAM-like in its
configuration and chip area footprint, but it is refresh-free, thus providing greater benefits beyond
low-voltage operation. Multi-level logic circuits are also readily enabled, and provide further
opportunities.
We will present results on room temperature NDR devices and circuits using a Si-based resonant
interband tunnel diode (RITD) developed by this team is a that is a hybrid NDR device that uses
quantum wells formed by delta-doping and appropriate band offsets to facilitate robust tunneling
across a p-n junction. This will illustrate this pathway, and then this will be extended to conjugated
polymer based devices that are in their initial investigations.
The polymer device to be presented leverages the unique flexible and solution-processable
properties of conjugated polymer semiconductors. We will demonstrate robust room temperature
negative differential resistance and logic circuit operations using polymer tunnel diodes
(ITO/TiO2 /MEH-PPV/Al), suitable for SmartCard topologies.
Paul R. Berger is a Professor in Electrical & Computer Engineering at Ohio State University
and Physics (by Courtesy). He is the Founder of the Nanoscale Patterning Laboratory. He received the
B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively,
all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on
conjugated polymer-based optoelectronic and electronic devices; molecular electronics; Si/SiGe
nanoelectronic devices and fabrication processes; Si-based resonant interband tunneling diodes and
quantum functional circuitry; bioelectronics; and semiconductor materials, fabrication and growth.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the
University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger
took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz,
Germany while supported by Prof. Dr. Gerhard Wegner and then moved on to Cambridge Display
Technology, Ltd., Cambridge, United Kingdom working under Dr. Jeremy Burroughes. In 2008, Prof.
Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in
Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and
Materials Engineering, Katholieke Universiteit Leuven, Belgium.
He has authored ~100 articles, 5 book sections and been issued 17 patents with 5 more
pending from 50+ disclosures. Some notable recognitions for Dr. Berger were an NSF CAREER
Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), a Lumley Research Award
(2006, 2011), and a Faculty Diversity Excellence Award (2009). He has been on the Program and
Advisory Committees of numerous conferences, including the IEDM, ISDRS meetings. He currently
is the Chair of the Columbus IEEE EDS/LEOS Chapter and Faculty Advisor to Ohio State’s IEEE
Student Chapters. He is a Fellow and Distinguished Lecturer of IEEE EDS and a Senior member of
Optical Society of America.
Manufacturable Passive Millimeter-Wave Imaging Detectors
and Nitride Tunneling for Terahertz
Paul R. Berger
Department of Electrical and Computer Engineering/Department of
Physics
The Ohio State University, Columbus, OH 43210
ABSTRACT
Backwards diodes are well suited for the passive detection of
millimeter-wave radiation, as they operate at zero-bias, which reduces 1/f
noise, thereby enabling simple operation and compact focal plane pixels
with no extra bias control circuitry required. However, most backward-diode detectors utilize III-V
compound based heterojunctions, which are not readily compatible with mainstream silicon
technology of complementary metal oxide semiconductor (CMOS) and heterojunction bipolar
transistor (HBT) and require pick-and-place assembly. Recently, the first directly-measured
microwave sensitivity performance of a zero-bias Si-based backward diodes, grown by lowtemperature molecular beam epitaxial (LT-MBE) growth, were demonstrated. Today, however, the
most common epitaxial processes for manufacturing and industry are based on chemical vapor
deposition (CVD) which can produce high quality single-crystalline epitaxial devices over large
wafers and with batch processing.We report the first CVD grown silicon only backward diodes
incorporating δ-doping layers with zero external dc bias.
III-Nitride based tunneling devices have generated a great deal of interest due to their ability
to operate at very high powers/current and elevated temperatures. Additionally, with the increasing
interest for making GaN-based photovoltaics, the need for efficient interband tunneling in multijunction solar cells will be a necessity too. But, to date, due to the nitride’s large bandgap and lack of
very high bulk doping capabilities, it has proved very difficult to create III-Nitride interband tunnel
diodes operating at high current densities. One solution is to use a fairly high concentration of indium
in the central tunnel junction to decrease the bandgap and thereby exponentially increase the tunneling
probability, while also making use of the spontaneous and piezoelectric polarization charge available
in the nitrides to supplement the creation of two quantum wells adjacent the tunnel junction, thereby
creating a resonant interband tunneling diode (RITD).
Paul R. Berger is a Professor in Electrical & Computer Engineering at Ohio State University
and Physics (by Courtesy). He is the Founder of the Nanoscale Patterning Laboratory. He received the
B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively,
all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on
conjugated polymer-based optoelectronic and electronic devices; molecular electronics;
Si/SiGenanoelectronic devices and fabrication processes; Si-based resonant interband tunneling diodes
and quantum functional circuitry; bioelectronics; and semiconductor materials, fabrication and growth.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the
University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger
took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz,
Germany while supported by Prof. Dr. Gerhard Wegner and then moved on to Cambridge Display
Technology, Ltd., Cambridge, United Kingdom working under Dr. Jeremy Burroughes. In 2008, Prof.
Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in
Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and
Materials Engineering, KatholiekeUniversiteit Leuven, Belgium.
He has authored ~100 articles, 5 book sections and been issued 17 patents with 5 more
pending from 50+ disclosures. Some notable recognitions for Dr. Berger were an NSF CAREER
Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), a Lumley Research Award
(2006, 2011), and a Faculty Diversity Excellence Award (2009). He has been on the Program and
Advisory Committees of numerous conferences, including the IEDM, ISDRS meetings. He currently
is the Chair of the Columbus IEEE EDS/LEOS Chapter and Faculty Advisor to Ohio State’s IEEE
Student Chapters. He is a Fellow and Distinguished Lecturer of IEEE EDS and a Senior member of
Optical Society of America.