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Étude d’une fonction : affichage (extrait du système : distributeur de boisson) Présentation : Le distributeur de boissons automatique permet d’obtenir 4 types de boissons : eau pure eau + menthe eau + anis eau + menthe + anis Le choix des boissons se fait par l’utilisateur qui sélectionne sa boisson en appuyant sur un des 4 boutons poussoirs (BPE, BPM, BPA, BPMA). On matérialise l’écoulement des produits (eau, menthe et anis) par l’éclairage de 3 DEL de couleurs (respectivement : rouge, verte et jaune). Lorsque la DEL jaune s’allume, il y a du sirop d’anis qui coule dans le gobelet. On donne le schéma de commande des 3 DEL (c’est le même pour chaque DEL) : G BERTHOME Page 1/4 Étude d’une fonction : affichage (extrait du système : distributeur de boisson) TRAVAIL DEMANDÉ Définition de la différence de potentiel VE1 La différence de potentiel VE1 est fournie par une porte logique 74LS00. On se réfère aux chronogrammes de la feuille réponse 1 (page 4/4). A l’instant t=0s, l’utilisateur fait une demande d’eau pure en appuyant sur BPE pendant 1s. Ensuite, l’eau s’écoule dans le gobelet pendant 5s. C’est à dire que VE1 passe à l’état haut pendant 5s tout au long de l’écoulement d’eau. Analyse qualitative : Question1 D’après la documentation technique du circuit intégré 74LS00 donner les valeurs de VOHmin et VOLmax. Question2 Compléter alors le chronogramme de VE1 sur la feuille réponse 1 (page 4/4). Question3 Quel est l’état du transistor Q1 lorsque VE1=VOLmax ? Justifier votre réponse. Question4 En déduire la valeur de la différence de potentiel VCE ainsi que l’état de D2 (éclairée ou éteinte). Question5 Quel est l’état du transistor Q1 lorsque VE1=VOHmin ? Justifier votre réponse. Question6 En déduire la valeur de la différence de potentiel VCE ainsi que l’état de D2 (éclairée ou éteinte). Question7 Compléter les chronogrammes de D2 et VCE sur la feuille réponse 1 (page 4/4). Question8 Conclure si le tracé des chronogrammes respecte la description du fonctionnement. G BERTHOME Page 2/4 Étude d’une fonction : affichage (extrait du système : distributeur de boisson) Analyse quantitative : Question9 D’après la documentation constructeur des diodes électroluminescentes, déterminer les valeurs de IF et VF (cas d’une diode électroluminescente rouge). Question10 Calculer la valeur réelle de IF. Question11 Justifier alors que la résistance R12 est correctement dimensionnée. Question12 D’après la documentation constructeur du transistor BC337-40, trouver la valeur de min. Question13 Calculer alors la valeur de IBsat. Question14 Justifier alors que la résistance R9 est correctement dimensionnée. Question15 Compte tenu des caractéristiques de la porte 74L00, expliquer pourquoi la structure suivante n’a pas été retenue pour réaliser la commande des LED. R12 & 74L00 75 VE1 D2 Question16 En vous aidant de la question 13 et la documentation constructeur de Q1, justifier l’emploi de la structure réelle avec un transistor en montrant que Q1 peut remédier au problème de la structure ci-dessus. G BERTHOME Page 3/4 Étude d’une fonction : affichage (extrait du système : distributeur de boisson) Feuille réponse n°1 BPE appuyé relâché 0 0,5 1 1,5 2 2,5 3 3.5 4 4,5 5 5,5 6 6,5 7 7,5 8 t(s) 0 0,5 1 1,5 2 2,5 3 3.5 4 4,5 5 5,5 6 6,5 7 7,5 8 t(s) 0 0,5 1 1,5 2 2,5 3 3.5 4 4,5 5 5,5 6 6,5 7 7,5 8 t(s) 0,5 1 1,5 2 2,5 3 3.5 4 4,5 5 5,5 6 6,5 7 7,5 8 t(s) VE1 5V 4V 3V 2V 1V 0V VCE 5V 4V 3V 2V 1V 0V Etat de D2 allumée éteinte 0 G BERTHOME Page 4/4 Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage VCBO 50 30 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 25 — — — — 50 30 — — — — 5.0 — — — — — — 100 100 — — — — 100 100 — — 100 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector – Emitter Breakdown Voltage (IC = 100 µA, IE = 0) V(BR)CEO BC337 BC338 Vdc V(BR)CES BC337 BC338 Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) BC337 BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338 Vdc ICBO nAdc ICES Emitter Cutoff Current (VEB = 4.0 V, IC = 0) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 IEBO Vdc nAdc nAdc 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max 100 100 160 250 60 — — — — — 630 250 400 630 — Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE — BC337/BC338 BC337–16/BC338–16 BC337–25/BC338–25 BC337–40/BC338–40 (IC = 300 mA, VCE = 1.0 V) Base–Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) VBE(on) — — 1.2 Vdc Collector – Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) — — 0.7 Vdc Cob — 15 — pF fT — 210 — MHz SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 SINGLE PULSE 0.01 0.03 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.001 θJC(t) = (t) θJC θJC = 100°C/W MAX θJA(t) = r(t) θJA θJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) P(pk) 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 10 20 50 100 Figure 1. Thermal Response 1.0 s 1.0 ms 1000 TJ = 135°C 100 µs hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 1000 dc TC = 25°C dc TA = 25°C 100 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR–EMITTER VOLTAGE 100 Figure 2. Active Region — Safe Operating Area 2 VCE = 1 V TJ = 25°C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMP) 1000 Figure 3. DC Current Gain Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.0 1.0 TJ = 25°C TA = 25°C 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 Figure 4. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 5. “On” Voltages 100 +1 θVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) VBE(sat) @ IC/IB = 10 0.8 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 0 –1 θVB for VBE –2 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 6. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data Cib 10 Cob 1 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 7. Capacitances 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data BC337/D 54LS00/DM54LS00/DM74LS00 Quad 2-Input NAND Gates General Description Features This device contains four independent gates each of which performs the logic NAND function. Y Alternate Military/Aerospace device (54LS00) is available. Contact a National Semiconductor Sales Office/ Distributor for specifications. Connection Diagram Dual-In-Line Package TL/F/6439 – 1 Order Number 54LS00DMQB, 54LS00FMQB, 54LS00LMQB, DM54LS00J, DM54LS00W, DM74LS00M or DM74LS00N See NS Package Number E20A, J14A, M14A, N14A or W14B Function Table Y e AB Inputs Output A B Y L L H H L H L H H H H L H e High Logic Level L e Low Logic Level C1995 National Semiconductor Corporation TL/F/6439 RRD-B30M105/Printed in U. S. A. 54LS00/DM54LS00/DM74LS00 Quad 2-Input NAND Gates June 1989 Absolute Maximum Ratings (Note) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Note: The ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the ‘‘Electrical Characteristics’’ table are not guaranteed at the absolute maximum ratings. The ‘‘Recommended Operating Conditions’’ table will define the conditions for actual device operation. Supply Voltage 7V Input Voltage 7V Operating Free Air Temperature Range b 55§ C to a 125§ C DM54LS and 54LS DM74LS 0§ C to a 70§ C Storage Temperature Range b 65§ C to a 150§ C Recommended Operating Conditions Symbol DM54LS00 Parameter VCC Supply Voltage VIH High Level Input Voltage VIL Low Level Input Voltage IOH High Level Output Current IOL Low Level Output Current TA Free Air Operating Temperature DM74LS00 Units Min Nom Max Min Nom Max 4.5 5 5.5 4.75 5 5.25 2 2 V V 0.7 0.8 V b 0.4 b 0.4 mA 8 mA 70 §C 4 b 55 125 0 Electrical Characteristics over recommended operating free air temperature range (unless otherwise noted) Symbol Parameter Min Typ (Note 1) DM54 2.5 3.4 DM74 2.7 3.4 Conditions Max Units b 1.5 V VI Input Clamp Voltage VCC e Min, II e b18 mA VOH High Level Output Voltage VCC e Min, IOH e Max, VIL e Max Low Level Output Voltage VCC e Min, IOL e Max, VIH e Min DM54 0.25 DM74 0.35 0.5 IOL e 4 mA, VCC e Min DM74 0.25 0.4 VOL V 0.4 V II Input Current @ Max Input Voltage VCC e Max, VI e 7V IIH High Level Input Current VCC e Max, VI e 2.7V 20 mA IIL Low Level Input Current VCC e Max, VI e 0.4V b 0.36 mA IOS Short Circuit Output Current VCC e Max (Note 2) ICCH Supply Current with Outputs High VCC e Max 0.8 1.6 mA ICCL Supply Current with Outputs Low VCC e Max 2.4 4.4 mA 0.1 DM54 b 20 b 100 DM74 b 20 b 100 mA mA Switching Characteristics at VCC e 5V and TA e 25§ C (See Section 1 for Test Waveforms and Output Load) RL e 2 kX Symbol Parameter CL e 15 pF CL e 50 pF Units Min Max Min Max tPLH Propagation Delay Time Low to High Level Output 3 10 4 15 ns tPHL Propagation Delay Time High to Low Level Output 3 10 4 15 ns Note 1: All typicals are at VCC e 5V, TA e 25§ C. Note 2: Not more than one output should be shorted at a time, and the duration should not exceed one second. 2