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TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 1999, Power Innovations Limited, UK ● 5 A Continuous On-State Current ● 30 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 200 µA APRIL 1971 - REVISED JULY 2000 TO-220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL TIC106D Repetitive peak off-state voltage (see Note 1) Repetitive peak reverse voltage TIC106M TIC106S VALUE VDRM 600 700 TIC106N 800 TIC106D 400 TIC106M TIC106S VRRM Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) 600 700 V V 800 TIC106N Continuous on-state current at (or below) 80°C case temperature (see Note 2) UNIT 400 IT(RMS) 5 A IT(AV) 3.2 A A Surge on-state current at (or below) 25°C (see Note 4) ITSM 30 Peak positive gate current (pulse width ≤ 300 µs) IGM 0.2 A Peak gate power dissipation (pulse width ≤ 300 µs) PGM 1.3 W PG(AV) 0.3 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C TL 230 °C Average gate power dissipation (see Note 5) Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT VGT IH TEST CONDITIONS Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Gate trigger voltage MIN TYP RGK = 1 kΩ TC = 110°C 400 µA VR = rated VRRM IG = 0 TC = 110°C 1 mA 200 µA VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs VAA = 12 V RL = 100 Ω TC = - 40°C tp(g) ≥ 20 µs RGK = 1 kΩ VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs RGK = 1 kΩ VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs RGK = 1 kΩ VAA = 12 V RGK = 1 kΩ VAA = 12 V 5 1.2 0.4 TC = 110°C 0.6 VT dv/dt NOTE voltage TC = - 40°C Critical rate of rise of off-state voltage (See Note 6) VD = rated VD RGK = 1 kΩ V 8 mA RGK = 1 kΩ IT = 5 A 1 0.2 5 Initiating IT = 10 mA Peak on-state UNIT VD = rated VDRM Initiating IT = 10 mA Holding current MAX 1.7 TC = 110°C 10 V V/µs 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER 3.5 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W PRODUCT 2 INFORMATION MIN TYP TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000 THERMAL INFORMATION AVERAGE ANODE ON-STATE CURRENT ANODE POWER DISSIPATED vs ON-STATE CURRENT TI20AA 6 TJ = 110°C Continuous DC 5 4 Φ = 180º 3 2 0° 180° Φ Conduction 1 10 Angle 0 30 40 50 60 70 80 90 100 1 10 100 IT - On-State Current - A Figure 1. Figure 2. SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION TI20AC Gate Control Guaranteed 10 1 10 100 TI20AD 10 RθJC(t) - Transient Thermal Resistance - °C/W TC ≤ 80 °C No Prior Device Conduction 1 1 110 TC - Case Temperature - °C 100 ITM - Peak Half-Sine-Wave Current - A TI20AB 100 PA - Anode Power Dissipated - W IT(AV) - Maximum Average Anode Forward Current - A DERATING CURVE 1 0·1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles Figure 3. Figure 4. PRODUCT 100 INFORMATION 3 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000 TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs HOLDING CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC20AB 1 10 VAA = 12 V RL = 100 Ω 0·8 RGK = 1 kΩ Ω RGK = 1 kΩ Ω IH - Holding Current - mA VGT - Gate Trigger Voltage - V VAA = 12 V TC20AD tp(g) ≥ 20 µs 0·6 0·4 Initiating IT = 10 mA 1 0·2 0 -50 -25 0 25 50 75 100 0.1 -50 125 -25 0 50 75 TC - Case Temperature - °C TC - Case Temperature - °C Figure 5. Figure 6. PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT TC20AE VTM - Peak On-State Voltage - V 2.5 2.0 TC = 25 °C tp = 300 µs Duty Cycle ≤ 2 % 1.5 1.0 0.5 0.0 0·1 1 10 ITM - Peak On-State Current - A Figure 7. PRODUCT 4 25 INFORMATION 100 125 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 6,6 6,0 15,32 14,55 18,0 TYP. 6,1 5,6 1,47 1,07 0,97 0,66 1 2 14,1 12,7 3 2,74 2,34 5,28 4,68 0,64 0,41 2,90 2,40 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT INFORMATION 5 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 2000, Power Innovations Limited PRODUCT 6 INFORMATION