Download TIC106 SERIES SILICON CONTROLLED RECTIFIERS

TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
Copyright © 1999, Power Innovations Limited, UK
●
5 A Continuous On-State Current
●
30 A Surge-Current
●
Glass Passivated Wafer
●
400 V to 800 V Off-State Voltage
●
Max IGT of 200 µA
APRIL 1971 - REVISED JULY 2000
TO-220 PACKAGE
(TOP VIEW)
K
1
A
2
G
3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
TIC106D
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
TIC106M
TIC106S
VALUE
VDRM
600
700
TIC106N
800
TIC106D
400
TIC106M
TIC106S
VRRM
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
600
700
V
V
800
TIC106N
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
UNIT
400
IT(RMS)
5
A
IT(AV)
3.2
A
A
Surge on-state current at (or below) 25°C (see Note 4)
ITSM
30
Peak positive gate current (pulse width ≤ 300 µs)
IGM
0.2
A
Peak gate power dissipation (pulse width ≤ 300 µs)
PGM
1.3
W
PG(AV)
0.3
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Average gate power dissipation (see Note 5)
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JULY 2000
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
IRRM
IGT
VGT
IH
TEST CONDITIONS
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
MIN
TYP
RGK = 1 kΩ
TC = 110°C
400
µA
VR = rated VRRM
IG = 0
TC = 110°C
1
mA
200
µA
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
VAA = 12 V
RL = 100 Ω
TC = - 40°C
tp(g) ≥ 20 µs
RGK = 1 kΩ
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
RGK = 1 kΩ
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
RGK = 1 kΩ
VAA = 12 V
RGK = 1 kΩ
VAA = 12 V
5
1.2
0.4
TC = 110°C
0.6
VT
dv/dt
NOTE
voltage
TC = - 40°C
Critical rate of rise of
off-state voltage
(See Note 6)
VD = rated VD
RGK = 1 kΩ
V
8
mA
RGK = 1 kΩ
IT = 5 A
1
0.2
5
Initiating IT = 10 mA
Peak on-state
UNIT
VD = rated VDRM
Initiating IT = 10 mA
Holding current
MAX
1.7
TC = 110°C
10
V
V/µs
6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
3.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
PRODUCT
2
INFORMATION
MIN
TYP
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JULY 2000
THERMAL INFORMATION
AVERAGE ANODE ON-STATE CURRENT
ANODE POWER DISSIPATED
vs
ON-STATE CURRENT
TI20AA
6
TJ = 110°C
Continuous DC
5
4
Φ = 180º
3
2
0°
180°
Φ
Conduction
1
10
Angle
0
30
40
50
60
70
80
90
100
1
10
100
IT - On-State Current - A
Figure 1.
Figure 2.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
TI20AC
Gate Control Guaranteed
10
1
10
100
TI20AD
10
RθJC(t) - Transient Thermal Resistance - °C/W
TC ≤ 80 °C
No Prior Device Conduction
1
1
110
TC - Case Temperature - °C
100
ITM - Peak Half-Sine-Wave Current - A
TI20AB
100
PA - Anode Power Dissipated - W
IT(AV) - Maximum Average Anode Forward Current - A
DERATING CURVE
1
0·1
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3.
Figure 4.
PRODUCT
100
INFORMATION
3
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JULY 2000
TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs
HOLDING CURRENT
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC20AB
1
10
VAA = 12 V
RL = 100 Ω
0·8
RGK = 1 kΩ
Ω
RGK = 1 kΩ
Ω
IH - Holding Current - mA
VGT - Gate Trigger Voltage - V
VAA = 12 V
TC20AD
tp(g) ≥ 20 µs
0·6
0·4
Initiating IT = 10 mA
1
0·2
0
-50
-25
0
25
50
75
100
0.1
-50
125
-25
0
50
75
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 5.
Figure 6.
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
TC20AE
VTM - Peak On-State Voltage - V
2.5
2.0
TC = 25 °C
tp = 300 µs
Duty Cycle ≤ 2 %
1.5
1.0
0.5
0.0
0·1
1
10
ITM - Peak On-State Current - A
Figure 7.
PRODUCT
4
25
INFORMATION
100
125
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JULY 2000
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
6,6
6,0
15,32
14,55
18,0 TYP.
6,1
5,6
1,47
1,07
0,97
0,66
1
2
14,1
12,7
3
2,74
2,34
5,28
4,68
0,64
0,41
2,90
2,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE
A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
INFORMATION
5
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JULY 2000
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 2000, Power Innovations Limited
PRODUCT
6
INFORMATION