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A Presentation on Insulated Gate Bipolar Transistor (IGBT) Prepared By: Goraniya Geeta (130030109039) 5th Sem - EED – AITS, Rajkot EED, AITS 1 IGBT: Insulated-Gate Bipolar Transistor • Combination BJT and MOSFET – High Input Impedance (MOSFET) – Low On-state Conduction Losses (BJT) • High Voltage and Current Ratings • Symbol EED, AITS 2 Cross-Sectional View of an IGBT Metal Silicon Dioxide Metal EED, AITS 3 IGBT Equivalent Circuit for VGE<VT + IBPNP IEPNP ICNPN IBNPN ICPNP VCC Leakage Current Both transistors are OFF IENPN IRBE EED, AITS 4 IGBT Equivalent Circuit for VGE>VT + PNP transistor turns ON, VCC RMOD decreases due to carrier injection from the PNP Emitter. NPN Transistor becomes forward biased at the BE, drawing current from the Base of the PNP transistor. MOS transistor conducts, drawing current from the Base of the PNP transistor. EED, AITS 5 Channel is Induced When VGE>VT RMOD PNP electrons NPN RBE Induced Channel EED, AITS 6 IGBT Output Characteristics Follows an SCR characteristic EED, AITS 7 IGBT Transfer Characteristic EED, AITS 8 IGBT Used as a Switch EED, AITS 9 Fairchild FGA25N120AND IGBT EED, AITS 10 EED, AITS 11 EED, AITS 12 EED, AITS 13 EED, AITS 14 EED, AITS 15 EED, AITS 16