Download IGBT: Insulated-Gate Bipolar Transistor

A
Presentation
on
Insulated Gate Bipolar Transistor (IGBT)
Prepared By:
Goraniya Geeta (130030109039)
5th Sem - EED – AITS, Rajkot
EED, AITS
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IGBT: Insulated-Gate Bipolar Transistor
• Combination BJT and MOSFET
– High Input Impedance (MOSFET)
– Low On-state Conduction Losses (BJT)
• High Voltage and Current Ratings
• Symbol
EED, AITS
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Cross-Sectional View of an IGBT
Metal
Silicon Dioxide
Metal
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IGBT Equivalent Circuit for VGE<VT
+
IBPNP
IEPNP
ICNPN
IBNPN
ICPNP
VCC
Leakage Current
Both transistors are OFF
IENPN
IRBE
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IGBT Equivalent Circuit for VGE>VT
+
PNP transistor turns ON,
VCC
RMOD decreases due to
carrier injection from the
PNP Emitter.
NPN Transistor
becomes forward
biased at the BE,
drawing current
from the Base of
the PNP transistor.
MOS transistor conducts,
drawing current from the
Base of the PNP transistor.
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Channel is Induced When VGE>VT
RMOD
PNP
electrons
NPN
RBE
Induced Channel
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IGBT Output Characteristics
Follows an SCR
characteristic
EED, AITS
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IGBT Transfer Characteristic
EED, AITS
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IGBT Used as a Switch
EED, AITS
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Fairchild FGA25N120AND IGBT
EED, AITS
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