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Drive Circuits Outline • Drive circuit design considerations • DC-coupled drive circuits • Isolated drive circuits • Protection measures in drive circuits • Component/circuit layout considerations Copyright © by John Wiley & Sons 2003 Drive Ckts - 1 Functionality of Gate/Base Drive Circuits • Turn power switch from off-state to on-state • Minimize turn-on time through active region where power dissipation is large • Provide adequate drive power to keep power switch in on-state • Turn power switch from on-state to off-state • Minimize turn-off time through active region wherepower dissipation is large • Provide bias to insure that power switch remains off • Control power switch to protect it when overvoltages or overcurrents are sensed • Signal processing circuits which generate the logic control signals not considered part of the drive circuit • Drive circuit amplifies control signals to levels required to drive power switch • Drive circuit has significant power capabilities compared to logic level signal processing circuits • Provide electrical isolation when needed between power switch and logic level signal processing/control circuits Copyright © by John Wiley & Sons 2003 Drive Ckts - 2 Drive Circuit Design Considerations • Drive circuit topologies • Output signal polarity - unipolar or bipolar • AC or DC coupled • Connected in shunt or series with power switch • Output current magnitude • Large Ion shortens turn-on time but lengthens turn-off delay time • Large Ioff shortens turn-off time but lengthens turn-on delay time • Provisions for power switch protection • Overcurrents • Blanking times for bridge circuit drives t 0 Unipolar 0 • Waveshaping to improve switch performance • Controlled diB/dt for BJT turn-off • Anti-saturation diodes for BJT drives • Speedup capacitors • Front-porch/backporch currents t Bipolar • Component layout to minimize stray inductance and shielding from switching noise Copyright © by John Wiley & Sons 2003 Drive Ckts - 3 Unipolar DC-coupled Drive Circuit - BJT Example • Circuit operation • Vcontrol > Vreference - BJT at comparator output on which puts Qpnp and Qsw on • • Vcontrol < Vreference - BJT at comparator output off which turns Qpnp off and thus Qsw off V BB V d Design procedure • VBE,off R2 = ; IB,off based on desired turn-off time. IB,off • Ipnp = IB,on + • value of Io. VBB = VCE,on(Qpnp) + R1 IC,pnp + VBE,on(Qsw) VBB = 8 to 10 V ; compromise between larger values which • VBE,on R2 ; IB,on value based on BJT beta and minimize effects of VBE variations and smaller values which minimize power dissipation in drive circuit Copyright © by John Wiley & Sons 2003 Comparator Vcontrol Io Q pnp R1 R Q sw 2 Vreference Drive Ckts - 4 Unipolar DC-coupled Drive Circuits- MOSFET examples V BB V d Comparator Vcontrol Io R1 R2 < Vreference comparator output low and Q sw off + Vreference V GG Comparator Vcontrol > Vreference comparator output high and Q sw on • Vcontrol Q sw - • Vcontrol V d Io R 1 + R G Q sw Vreference • Vcontrol > Vreference comparator output high putting Q npn on and thus Q sw on • Vcontrol < Vreference comparator output low putting Q pnp on and thus Q sw off V d V GG Io Vcontrol IC buffer amp with totem pole output DS0026 or UC1706/07 Copyright © by John Wiley & Sons 2003 R G Q sw Drive Ckts - 5 Bipolar DC-coupled Drive Circuit- BJT Example V d V BB+ Comparator R Df B Vcontrol + T B+ - T Vreference C BB+ B- BB- Copyright © by John Wiley & Sons 2003 • Large reverse base current flows to minimize turn-off time and base-emitter of Qsw reversed biased to insure offstate. Q sw C V Io • Vcontrol < Vreference - comparator output low, TB- on and Qsw off. • Vcontrol > Vreference - comparator output high, TB+ on and Qsw on. BB• Large forward base current to minimize turn-on time and to insure saturation of Qsw for low on-state losses Drive Ckts - 6 Bipolar DC-coupled Drive Circuit- MOSFET Example V d V GG+ Comparator D T B+ Vcontrol C + Vreference R TB- Io f Q sw G C • Bipolar drive with substantial output current capability GG+ GG- V GGV d V GG+ Io C GG+ Vcontrol IC buffer amp with totem pole output DS0026 or UC1706/07 R G Q sw • Simple bipolar drive circuit with moderate (1 amp)output current capability C GGV GG- Copyright © by John Wiley & Sons 2003 Drive Ckts - 7 Need for Electrical Isolation of Drive Circuits Isolated auxiliary power to base drive circuits • Negative half cycle of vs(t) - positive dc rail near safety ground potential. Temitter potential large and negative with respect to safety and logic ground • Postive half cycle of vs(t) - negative dc rail near safety ground potential. T+ emitter substantially positive with espect to safety ground if T- is off V d + v S Logic and Control Electronics Control Inputs • Variation in emitter potentials with respect to safety and logic ground means that electrical isolation of emitters from logic ground is needed. base Signal drive isolation circuit T+ base Signal isolation drive circuit T- Safety Ground Copyright © by John Wiley & Sons 2003 Drive Ckts - 8 D F+ D F- Methods of Control Signal Isolation Input to remainder of isolated drive circuit Logic level control ckts • Transformer isolation Power switch reference node (BJT emitter, MOSFET source) Logic ground Lightemitting diode V BB+ Isolated dc supply Signal from control logic Control logic ground Input to remainder of isolated drive circuit • Opto-coupler isolation Power switch reference node Photo-transistor V BB+ AC power in • Isolated dc power supplies for drive circuits V BB- Copyright © by John Wiley & Sons 2003 Drive Ckts - 9 Opto-Coupler Isolated BJT Drive V Signal from control electronics BB+ Opto-coupler R B C T BB+ B+ Q sw TB- C BB- V Copyright © by John Wiley & Sons 2003 BB- Drive Ckts - 10 Transformer-coupled BJT Drive Oscillator Q High frequency transformer V d Fast signal diodes R D B TB+ Q T C f Io BB+ Qsw BC BB- V control V AC power in BB+ VBB- t t Copyright © by John Wiley & Sons 2003 Oscillator output V control t Transformer primary voltage t Input to comparator Drive Ckts - 11 Opto-Coupler Isolated MOSFET Drives Signal from control electronics V Opto-coupler T V d GG+ D B+ C R T Io f GG+ Q sw G BC GG- V GGAC power in Signal from control electronics Opto-coupler V GG+ V d Io C GG+ IC buffer amp with totem pole output DS0026 or UC1706/07 R G Q sw C GGV GG- Copyright © by John Wiley & Sons 2003 (Circuitry for isolated dc supplies not shown) Drive Ckts - 12 Isolated Drives Without Auxiliary DC Supplies - Proportional Flyback BJT Example • Regenerative circuit operation • T1 on - current ip = VBB/Rp and Qsw off V BB R p Cp N iC 1 N2 ip Q sw i B T1 • T1 turned off - stored energy in gapped transformer core induces positive base current iB in Qsw causing it to go active and collector current iC begins to flow • Regenerative action of transformer connections supplies a base current iB = N3iC/N2 which keeps Qsw on even with ip = 0 • T1 turned on - positive current ip causes a base current iB = N3iC/N2 - N1ip/N2 in Qsw • Initially ip quite large (ip(0+) = biB1(0+)) so Qsw turned off N3 • Circuit design must insure turn-off iB has adequate negative magnitude and duration • Best suited for high frequency operation - lower volt-second requirements on transformer. • Also best suited for limited variations in duty cycle Copyright © by John Wiley & Sons 2003 Drive Ckts - 13 Isolated Drives Without Auxiliary DC Supplies - MOSFET Example V DD + v C Buffer + v sec Buffer output voltage v 0 C = V t v sec t 0 Buffer output voltage v duty ratio D= 0.5 Most suitable for applications where duty cycle D is 50% or less. Positive-going secondary voltage decreases as D increases. C 0 t v (1 - D) DD sec t duty ratio D= 0.3 0 Copyright © by John Wiley & Sons 2003 Drive Ckts - 14 Isolated Drive Without Auxiliary DC Supplies - MOSFET Example Vc o n t r o l Inverting Buffer A v C Noninverting Buffer sec vc a p B Schmitt trigger Vc o n t r o l v t t A v C v v A v t t B t B V v Z V sec (dotted) Copyright © by John Wiley & Sons 2003 Zener diode voltage VZ must be less than negative pulse out of transformer secondary or pulse will not reach MOSFET gate to turn it off. Z vc a p t Drive Ckts - 15 Isolated Drive Without Auxiliary DC Supplies - MOSFET Example 4011 Buffer Q vc o n t r o l 4047 oscillator (1 C 1 C 2 2 7555 D + B - Buffer MHz) R + v trans Q v 1s - + v 2s R G - vc o n t r o l v v Q Q v trans v v 1s 2s Copyright © by John Wiley & Sons 2003 C1 charges up to a positive voltage at power-up and remains there. D B prevents discharge Decay of voltage on via R 2 C 2 Drive Ckts - 16 Emitter-Open Switching of BJTs V i BB+ C standard RBSOA emitter open switching RBSOA Power BJT T E control v switching locus with standard base drive CE switching locus with emitter open base drive • Circuit operation • Turn on power BJT by turning on MOSFET TE. • Turn off power BJT by turning off MOSFET TE. • Collector current flows out base as negative base current. • Greater iB(off) compared to standard drive circuits iC = b iB(off) removes stored charge much faster • Turn off times reduced (up to ten times). • On-state losses of series combination of MOSFET and BJT minimized. • Low voltage MOSFET which has low losses can be used. Maximum off-state MOSFET voltage limited by Zener diode. • BJT base emitter junction reverse biased when TE off so breakdown rating of BJT given by BVCBO instead o of BVCEO. With lower BVCEO rating, BJT losses in on-state reduced. • Circuit also useful for GTOs and FCTs. Copyright © by John Wiley & Sons 2003 Drive Ckts - 17 Thyristor Gate Drive Circuit 1 4 3 2 Line Voltage DC power supply for gate trigger circuit zero crossing detection Input Control Signal Delay Angle Block Control Logic Ground Copyright © by John Wiley & Sons 2003 gate pulse isolation transformers Delay angle block is commercially available integrated circuit TCA780 circuit family Pulse Amplifier gate pulse isolation transformers Drive Ckts - 18 Thyristor Gate Drive Circuit (cont.) Transformer Line Voltage a a a Ramp Control voltage Thyristor gate drive waveforms Control of 1 & 2 Control of 3 & 4 D1 15 V D f Trigger signal Copyright © by John Wiley & Sons 2003 R G T Gate pulse amplifier G Drive Ckts - 19 GTO Gate Drive Circuit R R 4 2 T T G2 R 1 R 10 A pulse 5 G1 R V 6 GG+ 2 A Ls 1 R Control Circuit 3 L Ls 2 G V R GG- 7 T G3 turn-off pulse • Turn on TG1and TG2 to get large front-porch current • Turn off TG1 after some specified time to reduce total gate current to back-porch value. Auxilliary power supply for gate drive circuit Copyright © by John Wiley & Sons 2003 Drive Ckts - 20 Overcurrent Protection With Drive Circuits V d V BB+ R 1 R B R I p o C Dp overcurrent protection BJT control V BB- • Point C one diode drop above VCE(sat) when BJT is on. Overcurrent will increase VCE and thus potential at C. • If C rises above a threshold value and control signal is biasing BJT on, overcurrent protection block will turn off BJT. Conservate design would keep BJT off until a manual reset had been done. Copyright © by John Wiley & Sons 2003 Drive Ckts - 21 Limiting Overcurrents by Limiting On-state Base Current + Vd D Cd Io F • Stepdown converter with short curcuit at t = t sc - i I I i C C I B,max C,sc C(on)max V in v CE t sc t • Overcurrent limited to IC(on)max < IC,sc by keeping IB,max < IC,sc/b • IC,sc = maximum allowable instantaneous collector current • Same approach can be used with MOSFETs and IGBTs. VGS mustbe restricted to keep drain current to safe values. Copyright © by John Wiley & Sons 2003 Drive Ckts - 22 Blanking Times in Bridge Circuit Drives Optocoupler or transformer V 1+ + Vd - T+ T- Io Vcontrol, T + • Turn off T+ before turning on T- in order to avoid cross -conduction (shorting out of Vd) signal ground Vcontrol, T Control for converter leg - V 1- Optocoupler or transformer V control, bridge V 1+ V 1- V control, dead time T + blanking time V control, T - Copyright © by John Wiley & Sons 2003 collector current blanking time dead time Drive Ckts - 23 Drive Circuit Waveshaping for Improved Operation V R • Anti-saturation diode Das keeps Qsw active. • VAE = VBE(on) + VD1 = VCE(on) + Vdas • VCE(on) = VBE(on) > VCE(sat) because VD1 = Vdas B Da s TB+ D1 A T BB+ D BV Qsw • Ds provides path for negative base current at Qsw turn-off. • Storage delay time at turn-off reduced but on-state losses increase slightly. 2 E Speed-up capacitors BBV R i BB+ B C on B T B+ i T t B BV BB- Copyright © by John Wiley & Sons 2003 Qsw • Transient overdrive provided via C on for faster turn-on of switch • Same concept can be applied to MOSFET and IGBT drive circuits Drive Ckts - 24 Drive Circuit Waveshaping (cont.) V R BB+ B Controlled rate of change of turn-off base current T B+ i B Q sw L off • Excessively long collector current tailing time at BJT turn-off if diB(off)/dt is too large. • Inductor Loff restricts diB(off)/dt to - VBB/Loff TBV BB- Gate/base current Front porch current V Back porch current BB+ Back porch current R R B1 Control T B+ T V t Copyright © by John Wiley & Sons 2003 BB- B- B2 Front porch, back porch gate/base currents at turn-on Front porch current i B • Faster turn-on without putting device deeply into on-state where turn-off delay time will be substantially increased. Q sw • Applicable to BJTs, MOSFETs, IGBTs, and GTOs. Drive Ckts - 25 Circuit/Component Layout Considerations D Control Signal Io f Control Signal Q Df Drive Circui t Ls Drive Circui t Prime consideration is minimizing stray inductance V d V d Io Q sw Ls sw • Stray inductance in series with high-voltage side of power device Qsw causes overvoltage at turnoff. • Stray inductance in series with low-voltage side power device Qsw can cause oscill-ations at turnon and turn-off. • One cm of unshielded lead has about 5 nH of series inductance. V d Control Signal Drive Circui t Twisted or shielded conductors Df Io • Keep unshielded lead lengths to an absolute minimum. D Q sw Control terminals G Power terminals S S Use shielded conductors to connect drive circuit to power switch if there must be any appreciable separation (few cm or more) between them Copyright © by John Wiley & Sons 2003 Some power devices provided with four leads, two input leads and two power leads, to minimize stray inductance in input circuit. Drive Ckts - 26