Download 22FFL Technology - Mark Bohr

Leading at the edge
TECHNOLOGY AND MANUFACTURING DAY
22FFL
technology
MARK BOHR
Intel Senior Fellow, Technology and Manufacturing Group
Director, Process Architecture and Integration
TECHNOLOGY AND MANUFACTURING DAY
Disclosures
Intel Technology and Manufacturing Day 2017 occurs during Intel’s “Quiet Period,” before Intel announces its 2017 first
quarter financial and operating results. Therefore, presenters will not be addressing first quarter information during
this year’s program.
Statements in this presentation that refer to forecasts, future plans and expectations are forward-looking statements
that involve a number of risks and uncertainties. Words such as “anticipates,” “expects,” “intends,” “goals,” “plans,”
“believes,” “seeks,” “estimates,” “continues,” “may,” “will,” “would,” “should,” “could,” and variations of such words and
similar expressions are intended to identify such forward-looking statements. Statements that refer to or are based on
projections, uncertain events or assumptions also identify forward-looking statements. Such statements are based on
management’s expectations as of March 28, 2017, and involve many risks and uncertainties that could cause actual
results to differ materially from those expressed or implied in these forward-looking statements. Important factors that
could cause actual results to differ materially from the company’s expectations are set forth in Intel’s earnings release
dated January 26, 2017, which is included as an exhibit to Intel’s Form 8-K furnished to the SEC on such date.
Additional information regarding these and other factors that could affect Intel’s results is included in Intel’s SEC filings,
including the company’s most recent reports on Forms 10-K, 10-Q and 8-K reports may be obtained by visiting our
Investor Relations website at www.intc.com or the SEC’s website at www.sec.gov.
TECHNOLOGY AND MANUFACTURING DAY
Intel’s new 22FFL technology
22FFL is the world’s first FinFET technology
for low power IOT and mobile products

Advanced FinFET transistors based on proven 22 nm and 14 nm features

>100x leakage power reduction with new ultra-low leakage transistor option

Simplified interconnects and design rules based on 22 nm technology

New levels of design automation

Fully RF design enabled

Cost competitive with other industry 28/22 nm planar technologies
TECHNOLOGY AND MANUFACTURING DAY
Source: Amalgamation of analyst data and Intel analysis, based upon current expectations and available information.
22FFL dimensions
22 nm
22FFL
14 nm
FinFET
FinFET
FinFET
Fin Pitch
60
45
42
nm
Gate Pitch
90
108
70
nm
Metal Pitch
80
90
52
nm
Logic Cell Ht
840
630
399
nm
Trans. Density
15.3
18.8
37.5
MTr / mm2
SRAM Cell
.092
.088
.050
um2
Transistor
22FFL is based on proven 22 nm and 14 nm features
TECHNOLOGY AND MANUFACTURING DAY
Source: Intel.
22FFL devices

High performance transistors

Low 1/F noise

Ultra low leakage transistors

Deep N-well isolation

Analog transistors

Precision resistor

High voltage I/O transistors

MIM capacitor

High voltage power transistors

High resistance substrate

Good device matching

High-Q inductors
22FFL offers a wide range of devices for digital and analog/RF design
TECHNOLOGY AND MANUFACTURING DAY
Source: Intel.
FinFET Performance and leakage Advantage
10
2.0
1.8
1.6
Transistor
Gate Delay
(normalized)
1.4
1
37%
0.1
32 nm
Planar
Faster
Channel
Current
1.2
(normalized)
1.0
22 nm
Tri-Gate
0.8
0.6
0.5
18%
Faster
0.6 0.7 0.8 0.9 1.0
Operating Voltage (V)
1.1
Planar
0.01
Tri-Gate
0.001
0.0001
1E-05
0.0
Reduced
Leakage
0.2
0.4
0.6
0.8
1.0
Gate Voltage (V)
FinFETs provide a significant performance and leakage advantage over any planar transistor
TECHNOLOGY AND MANUFACTURING DAY
Source: Intel.
Intel 22 nm Tri-Gate announcement, April 2011
22FFl high performance transistors
100
0.85V
10
22FFL
HP
Total
Leakage
14 nm++
HP
22GP
HP
1
Lower
Leakage
Higher
Performance
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Drive Current
1.4
1.6
1.8
2.0
22FFL provides high performance transistors with drive currents similar to 14nm++
TECHNOLOGY AND MANUFACTURING DAY
Source: Intel.
22FFL Low leakage transistors
100
0.85V
22FFL
HP
10
22GP
HP
1
14 nm++
HP
Total
0.1
Leakage
0.01
22FFL
Low Leakage
(LL)
0.001
>100x
Lower
Leakage
Higher
Performance
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Drive Current
1.4
1.6
1.8
2.0
22FFL provides the lowest leakage transistors for any mainstream technology
TECHNOLOGY AND MANUFACTURING DAY
Source: Intel.
22FFL transistor Options
100
0.85V
22FFL
HP
10
1
HP transistors for
high performance
circuits
Total
0.1
Leakage
0.01
Lower
Leakage
LL transistors for
22FFL
Low Leakage always-on alwaysconnected circuits
(LL)
0.001
Higher
Performance
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Drive Current
1.4
1.6
1.8
2.0
High performance and low leakage transistors co-exist on the same die
TECHNOLOGY AND MANUFACTURING DAY
Source: Intel.
Intel Custom Foundry’s robust Ecosystem
Design
Service
Design Tools
& Flows
Intel
Custom
Foundry
Foundation
IP
Soft IP
Advanced IP
22FFL is fully supported by a robust design ecosystem
TECHNOLOGY AND MANUFACTURING DAY
Other names and brands may be claimed as the property of others.
22FFL technology









High transistor drive currents similar to Intel 14 nm
Low leakage transistors with >100x lower total leakage than 22GP
Die area scaling better than industry 28/22 nm technologies
Wide range of advanced analog/RF devices
Extensive use of single patterning for affordable ease-of-design
Mature die yield with use of proven 22/14 nm features
Cost competitive with other 28/22 nm planar technologies
Industry standard PDK0.5 available now, PDK1.0 in Q2 ’17*
Production readiness in Q4 2017*
22FFL is an exciting new technology that provides a compelling combination of
performance, power, density and ease-of-design for low power IOT and mobile products
TECHNOLOGY AND MANUFACTURING DAY
* Intel estimate based on current expectations and available information.
Leading at the edge
TECHNOLOGY AND MANUFACTURING DAY