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8541 854110 854121 854129 854130 854140 854150 854160 854190 semiconductor devices, light-emit diodes etc, pts Diodes, Other than Photosensitive or Light Emitting Diodes Transistors, With a Dissipation Rate of Less than 1w Other Transistors, Other than Photosensitive Transistors Thyristors, Diacs and Triacs, Other than Photosensitive Devices Photosensitive Semiconductor Devices; Light Emitting Diodes Other Semiconductor Devices Mounted Piezo-electric Crystals Parts of Diodes, Transistors or Photosensitive Semiconductor Devices American Standards ANSI/EIA 4900-2002, Use of Semiconductor Devices Outside Manufacturers' Specified Temperature Ranges Prescribes processes for using semiconductor devices in wider temperature ranges than those specified by the device manufacturer. It applies to any designer or manufacturer of equipment intended to operate under conditions that require semiconductor devices to function in temperature ranges beyond those for which the devices are marketed. ANSI N42.31-2003, Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation Measurement and test procedures are established for wide-bandgap semiconductor detectors such as cadmium-telluride (CdTe) cadmium-zinc-telluride (CdZnTe), and mercuric iodide (HgI2) that can be used at room temperature for the detection and quantitative characterization of gamma-rays, X-rays and charged particles. Standard terminology and descriptions of the principal features of the detectors are included. IEEE 1450.1-2005, Standard for Extensions to Standard Test Interface Language (STIL) (IEEE Std. 1450-1999) for Semiconductor Design Environments Standard Test Interface Language (STIL) provides an interface between digital test generation tools and test equipment. Extensions to the test interface language are defined that a) facilitate the use of the language in the design environment and b) facilitate the use of the language for large designs encompassing sub-designs with reusable patterns. IEEE C57.18.10-1998 (R2003), Standard Practices and Requirements for Semiconductor Power Rectifier Transformers Includes practices and requirements for semiconductor power rectifier transformers for dedicated loads rated single-phase 300 kW and above and three-phase 500 kW and above IEEE C62.35-1987 (R2000), Standard Test Specifications for Avalanche Junction Semiconductor Surge-Portective Devices Applies to a two-terminal avalanche junction surge suppressor for surge protective application on systems with dc to 420 Hz frequency and voltages equal to or less than 1000 V rms or 1200 V dc. ANSI/NFPA 318-2006, Standard for the Protection of Semiconductor Fabrication Facilities Provides reasonable safeguards for the protection of facilities containing cleanrooms from fire and related hazards. These safeguards are intended to provide protection against injury, life loss, and property damage. UL 248-13-2005, Standard for Safety for Low-Voltage Fuses – Part 13: Semiconductor Fuses These UL 248 proposals include increased use of International symbology, clarifications, editorial revisions, establishment of minimum samples in the Operation Test for Fuses, the addition of Canadian requirements for Class K fuses with Class H dimensions, miniature fuse requirements, withdrawal of body temperature requirements and the addition of 600 V ratings to Class T fuses. IEEE C62.37-1996 (R2002), Standard Test Specification for Thyristor Diode Surge Protective Devices Applies to two or three terminal, four or five layer, thyristor surge protection devices (SPDs) for application on systems with voltages equal to or less than 1000 V rms or 1200 V dc. ANSI Z21.77-2005, Manually-Operated Piezo-Electric Spark Gas Ignition Systems and Components Details test and examination criteria for manually operated piezo-electric spark gas ignition systems and components, designed to ignite an appliance burner(s), for use with natural, manufactured or mixed gases, liquefied petroleum gases or LP gas-air mixtures. ANSI Z21.77b-2004, Manually Operated Piezo-Electric Spark Gas Ignition Systems and Components Details test and examination criteria for manually operated piezo-electric spark gas ignition systems and components, designed to ignite an appliance burner(s), for use with natural, manufactured or mixed gases, liquefied petroleum gases or LP gas-air mixtures. IEEE 857-1996 (R2004), Recommended Practice for Test Procedures for High Voltage Direct Current Thyristor Valves Contains information and recommendations for the type testing of thyristor valves for high-voltage direct-current (HVDC) power transmission systems. IEEE C62.37.1-2000, Guide for the Application of Thyristor Surge Protective Devices Applies to thyristor Surge Protective Devices (thyristor SPD) components used in systems with voltages up to 1000 Vrms or 1200 Vdc. These components are designed to limit overvoltages and divert surge currents by voltage clamping and crowbarring (switching to a low impedance) actions. International Standards IEC IEC 60050-521 Ed. 2.0 b:2002 International Electrotechnical Vocabulary - Part 521: Semiconductor devices and integrated circuits IEC 60092-304 Amd.1 Ed. 3.0 b:1995 Amendment 1 - Electrical installations in ships. Part 304: Equipment - Semiconductor convertors IEC 60092-304 Ed. 3.0 b:1980 Electrical installations in ships. Part 304: Equipment - Semiconductor convertors "Applies to static convertors using semiconductor rectifying elements, such as diodes, reverse blocking triode thyristors, etc. Applies to a.c./d.c., d.c./a.c., d.c./d.c. and a.c./a.c. conversions. " IEC 60119 Ed. 1.0 b:1960 Recommendations for polycrystalline semiconductor rectifier stacks and equipment "Applies to selenium and copper-oxide stacks, rectifiers and rectifier equipment used for supplying d.c. power from a.c. sources at frequencies up to 2 000 Hz. Does not apply to telecommunication rectifiers other than those for power supplies to such apparatus nor to rectifiers used as auxiliaries of measuring instruments. Defines the characteristics of these devices, lays down a marking system, preferred ratings, and describes methods of test. " IEC 60134 Ed. 1.0 b:1961 Rating systems for electronic tubes and valves and analogous semiconductor devices "Describes rating systems in use for electronic tubes and analogous semiconductor devices. Its object is to bring about a greater understanding of these systems, especially in the division of responsibility between the manufacturer and the circuit designer. " IEC 60146-1-1 Amd.1 Ed. 3.0 b:1996 Amendment 1 - Semiconductor convertors General requirements and line commutated convertors - Part 1-1: Specifications of basic requirements IEC 60146-1-1 Ed. 3.0 b:1991 Semiconductor convertors - General requirements and line commutated convertors - Part 1-1: Specifications of basic requirements Part 1-1: Specifications of basic requirements Specifies the requirements for the performance of all electronic power convertors and electronic power switches using controllable and/or non-controllable electronic valves. Specifies the requirements applicable to line commutated convertors for conversion of a.c. power to d.c. power or vice versa including tests and service conditions which influence the basis of rating. IEC 60146-1-3 Ed. 3.0 b:1991 Semiconductor convertors - General requirements and line commutated convertors - Part 1-3: Transformers and reactors "Specifies characteristics wherein convertor transformers differ from ordinary power transformers. In all other respects, the rules specified in IEC 60076 shall apply. " IEC 60146-2 Ed. 2.0 b:1999 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters "Applies to all types of semiconductor inverters of the self-commutated type and semiconductor convertors which contain at least one part of a self-commutated type, including direct a.c. convertors and d.c. convertors for all applications. " IEC 60191-1 Ed. 1.0 b:1966 Mechanical standardization of semiconductor devices. Part 1: Preparation of drawings of semiconductor devices "Gives recommended practice for the preparation of drawings of semiconductor devices, drawings which indicate the space which should be allowed for devices in equipment together with other dimensional characteristics required to ensure mechanical interchangeability. These drawings represent the unification of the national standards and encourage the manufacturers of devices to comply with the tolerances shown in order to extend their range of customers internationally. " IEC 60191-1 Ed. 1.0 b:1966 Mechanical standardization of semiconductor devices. Part 1: Preparation of drawings of semiconductor devices "Gives recommended practice for the preparation of drawings of semiconductor devices, drawings which indicate the space which should be allowed for devices in equipment together with other dimensional characteristics required to ensure mechanical interchangeability. These drawings represent the unification of the national standards and encourage the manufacturers of devices to comply with the tolerances shown in order to extend their range of customers internationally. " IEC 60191-1A Ed. 1.0 b:1969 Mechanical standardization of semiconductor devices - Part 1: Preparation of drawings of semiconductor devices - First supplement Deals with terminals on square or rectangular periphery and lozenge-shaped bases. IEC 60191-1B Ed. 1.0 b:1970 Mechanical standardization of semiconductor devices - Part 1: Preparation of drawings of semiconductor devices - Second supplement Deals with general philosophy of flat-based devices. IEC 60191-2 Amd.10 Ed. 1.0 b:2004 Amendment 10 - Mechanical standardization of semiconductor devices - Part 2: Dimensions IEC 60191-2 Amd.11 Ed. 1.0 b:2004 Amendment 11 - Mechanical standardization of semiconductor devices - Part 2: Dimensions IEC 60191-2 Amd.12 Ed. 1.0 b:2006 Amendment 12 - Mechanical standardization of semiconductor devices - Part 2: Dimensions IEC 60191-2 Amd.13 Ed. 1.0 b:2006 Amendment 13 - Mechanical standardization of semiconductor devices - Part 2: Dimensions IEC 60191-2 Amd.14 Ed. 1.0 b:2006 Amendment 14 - Mechanical standardization of semiconductor devices - Part 2: Dimensions IEC 60191-2 Amd.15 Ed. 1.0 b:2006 Amendment 15 - Mechanical standardization of semiconductor devices - Part 2: Dimensions IEC 60191-2 Amd.5 Ed. 1.0 b:2002 Amendment 5 - Mechanical standardization of semiconductor devices. Part 2: Dimensions IEC 60191-2 Amd.6 Ed. 1.0 b:2002 Amendment 6 - Mechanical standardization of semiconductor devices. Part 2: Dimensions IEC 60191-2 Amd.7 Ed. 1.0 b:2002 Amendment 7 - Mechanical standardization of semiconductor devices. Part 2: Dimensions IEC 60191-2 Amd.8 Ed. 1.0 b:2003 Amendment 8 - Mechanical standardization of semiconductor devices. Part 2: Dimensions IEC 60191-2 Amd.9 Ed. 1.0 b:2003 Amendment 9 - Mechanical standardization of semiconductor devices - Part 2: Dimensions IEC 60191-2 Ed. 1.0 b:1966 Mechanical standardization of semiconductor devices. Part 2: Dimensions "Consolidated reprint consisting of IEC 191-2 (1966) and supplements 60191-2A (1967), 60191-2B (1969), 60191-2C (1970), 60191-2D (1971), 60191-2E (1974), 60191-2F (1976), 60191-2G (1978), 60191-2H (1978), 60191-2J (1980), 60191-2K (1981), 60191-2L (1982), 60191-2M (1983), 60191-2N (1987), 60191-2P (1988), 60191-2Q (1990), 60191-2R (1995), 60191-2S (1995). The IEC standard drawings given in this publication represent the unification of national standards. This is a loose-leaf publication. " IEC 60191-2X Ed. 1.0 b:1999 Mechanical standardization of semiconductor devices - Part 2: Dimensions IEC 60191-2Z Ed. 1.0 en:2000 Twenty-fourth supplement to Publication 60191-2 (1966) MECHANICAL STANDARDIZATION OF SEMICONDUCTOR DEVICES - Part 2: Dimensions IEC 60191-3 Ed. 2.0 b:1999 Mechanical standardization of semiconductor devices - Part 3: General rules for the preparation of outline drawings of integrated circuits Gives guidance on the preparation of drawings of integrated circuits outlines. IEC 60191-4 Amd.1 Ed. 2.0 b:2001 Amendment 1 - Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages IEC 60191-4 Amd.2 Ed. 2.0 b:2002 Amendment 2 - Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages IEC 60191-4 Ed. 2.2 b:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages Describes a method for the designation and the classification into forms of package outlines for semiconductor devices. Provides a systematic method for generating universal descriptive designators for semiconductor packages. IEC 60191-5 Ed. 2.0 b:1997 Mechanical standardization of semiconductor devices - Part 5: Recommendations applying to integrated circuit packages using tape automated bonding (TAB) Gives recommendations applying to integrated circuits supplied in packages using tape automated bonding (TAB) as the principal component for structural and interconnection functions. Covers the requirements for tape with bonded integrated circuits (IC) as supplied by a manufacturer to a user. IEC 60191-6 Ed. 2.0 en:2004 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages Gives general rules for the preparation of outlines drawings of surface-mounted semiconductor devices. It supplements IEC 60191-1 and 60191-3. It covers all surface-mounted discrete semiconductors devices as well as integrated circuits classified as form E. IEC 60191-6-1 Ed. 1.0 en:2001 Mechanical standardization of semiconductor devices - Part 6-1: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for gull-wing lead terminals "Covers the requirements for the design rule of terminal shape plastic packages with gull-wing leads (e.g. QFP, SOP, SSOP, TSOP, etc.)" IEC 60191-6-10 Ed. 1.0 en:2003 Mechanical standardization of semiconductor devices - Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Dimensions of P-VSON Provides the common outline drawings and dimensions for all types of structures and composed materials of plastic very thin small outline non-lead package (P-VSON). IEC 60191-6-12 Ed. 1.0 en:2002 Mechanical standardization of semiconductor devices - Part 6-12: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for fine-pitch land grid array (FLGA) - Rectangular type "Provides common outline drawings and dimensions for all types of structures and composed materials of fine-pitch land grid array whose terminal pitch is less than, or equal to, 0,80 mm and whose package body outline is rectangular." IEC 60191-6-2 Ed. 1.0 en:2001 "Mechanical standardization of semiconductor devices - Part 6-2: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for 1,50 mm, 1,27 mm and 1,00 mm pitch ball and column terminal packages" Covers the requirements for the preparation of drawings of integrated circuit outlines for the various ball and column terminal packages. IEC 60191-6-3 Ed. 1.0 en:2000 Mechanical standardization of semiconductor devices - Part 6-3: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of quad flat packs (QFP) Stipulates a method for quad flat packs measuring dimensions which are classified into Form E. IEC 60191-6-4 Ed. 1.0 en:2003 Mechanical standardization of semiconductor devices - Part 6-4: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of ball grid array (BGA) Covers the requirements for the measuring methods of ball grid array (BGA) dimensions. IEC 60191-6-5 Ed. 1.0 en:2001 Mechanical standardization of semiconductor devices - Part 6-5: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for fine-pitch ball grid array (FBGA) "Provides common outline drawings and dimensions for all types of structures and composed materials of fine-pitch ball grid array the terminal pitch of which is less than or equal to 0,80 mm." IEC 60191-6-6 Ed. 1.0 en:2001 Mechanical standardization of semiconductor devices - Part 6-6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for fine pitch land grid array (FLGA) "Provides common outline drawings and dimensions for all types of structures and composed materials of fine-pitch land grid whose terminal pitch is less than, or equal to, 0,80 mm and whose package body outline is square." IEC 60191-6-8 Ed. 1.0 en:2001 Mechanical standardization of semiconductor devices - Part 6-8: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for glass sealed ceramic quad flatpack (G-QFP) Provides the common outline drawings and dimensions for all types of structures and composed material of glass sealed ceramic quad flatpack. IEC 60747-1 Ed. 2.0 en:2006 Semiconductor devices - Part 1: General Gives the general requirements applicable to the discrete semiconductor devices and integrated circuits covered by the other parts of IEC 60747 and IEC 60748. IEC 60747-10 Amd.3 Ed. 2.0 b:1996 Amendment 3 - Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits IEC 60747-10 Ed. 2.0 b:1991 Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits "It is a generic specification for semiconductor devices, discrete devices and integrated circuits, including multichip integrated circuits, but excluding hybrid circuits. It defines general procedures for quality assessment to be used in the IECQ System and gives general rules for measuring methods of electrical characteristics, climatic and mechanical tests, and endurance tests. " IEC 60747-11 Amd.1 Ed. 1.0 b:1991 Amendment 1 - Semiconductor devices. Discrete devices. Part 11: Sectional specification for discrete devices IEC 60747-11 Amd.2 Ed. 1.0 b:1996 Amendment 2 - Semiconductor devices. Discrete devices. Part 11: Sectional specification for discrete devices IEC 60747-11 Ed. 1.0 b:1985 Semiconductor devices. Discrete devices. Part 11: Sectional specification for discrete devices "Applies to discrete semiconductor devices, excluding optoelectronic devices. Should be read together with the generic specification to which it refers: it gives details of the Quality Assessment Procedures, the inspection requirements, screening sequences, sampling requirements, test and measurement procedures required for the assessment of semiconductor devices. " IEC 60747-14-1 Ed. 1.0 en:2000 Semiconductor devices - Part 14-1: Semiconductor sensors - General and classification "Describes general items concerning the specifications for sensors which are basically made of semiconductor materials, but also applicable to sensors using dielectric or ferroelectric materials." IEC 60747-14-1 Ed. 1.0 en:2000 Semiconductor devices - Part 14-1: Semiconductor sensors - General and classification "Describes general items concerning the specifications for sensors which are basically made of semiconductor materials, but also applicable to sensors using dielectric or ferroelectric materials." IEC 60747-14-2 Ed. 1.0 en:2000 Semiconductor devices - Part 14-2: Semiconductor sensors - Hall elements Provides standards for packaged semiconductor Hall elements which utilize the Hall effect. IEC 60747-14-3 Ed. 1.0 en:2001 Semiconductor devices - Part 14-3: Semiconductor sensors - Pressure sensors "Specifies requirements for semiconductor pressure sensors measuring absolute, gauge or differential pressures." IEC 60747-16-1 Ed. 1.0 en:2001 Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers "Provides the terminology, the essential ratings and characteristics, as well as the measuring methods, for integrated circuit microwave power amplifiers." IEC 60747-16-10 Ed. 1.0 en:2004 Semiconductor devices - Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits "Specifies the terms, definitions, symbols, quality system, test, assessment and verification methods and other requirements relevant to the design, manufacture and supply of monolithic microwave integrated circuits in compliance with the general requirements of the IECQ-CECC System for electronic components of assessed quality." IEC 60747-16-2 Ed. 1.0 en:2001 Semiconductor devices - Part 16-2: Microwave integrated circuits - Frequency prescalers "Provides terminology and letter symbols, essential ratings and characteristics, as well as measuring methods for the integrated circuit micowave frequency prescalers. " IEC 60747-16-3 Ed. 1.0 en:2002 Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters "Provides new measuring methods, terminology and letter symbols, as well as essential ratings and characteristics for integrated circuit microwave frequency converters." IEC 60747-16-4 Ed. 1.0 en:2004 Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches "Provides new measuring methods, terminology and letter symbols, as well as essential ratings and characteristics for integrated circuit microwave switches. Switches in this standard are based on SPDT (single pole double throw). However, this standard is applicable to the other types of switches." IEC 60747-2 Ed. 2.0 b:2000 Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes "Gives standards for rectifier diodes such as avalanche, controlled avalanche or fast-switching rectifier diodes. " IEC 60747-2-1 Ed. 1.0 b:1989 "Semiconductor devices - Discrete devices - Part 2: Rectifier diodes - Section One: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A" IEC 60747-2-2 Ed. 1.0 b:1993 "Semiconductor devices - Discrete devices - Part 2: Rectifier diodes - Section 2: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A" IEC 60747-3 Amd.1 Ed. 1.0 b:1991 Amendment 1 - Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes IEC 60747-3 Amd.2 Ed. 1.0 b:1993 Amendment 2 - Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes IEC 60747-3 Ed. 1.0 b:1985 Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes "Gathers all information on signal (including switching) diodes, voltage-reference, voltage-regulator diodes and current-regulator diodes: i.e. terminology and letter symbols, essential ratings and characteristics, measuring methods, electrical endurance tests. It supplements basic information given in IEC 60747-1. " IEC 60747-3-1 Ed. 1.0 b:1986 "Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes" "Covers the specific requirements for quality assessment of signal diodes, switching diodes and controlled-avalanche diodes. " IEC 60747-3-2 Ed. 1.0 b:1986 "Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes,excluding temperature-compensated precision reference diodes" Covers the specific requirements for quality assessment of voltage-regulator diodes and voltage-reference diodes. IEC 60747-4 Amd.1 Ed. 1.0 b:1993 Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors IEC 60747-4 Ed. 1.2 b:2001 Semiconductor devices - Discrete devices - Part 4: Microwave devices "Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors. " IEC 60747-4-1 Ed. 1.0 en:2000 Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification IEC 60747-4-2 Ed. 1.0 en:2000 Semiconductor devices - Discrete devices - Part 4-2: Microwave diodes and transistors Integrated-circuit microwave amplifiers - Blank detail specification IEC 60747-5-1 Amd.1 Ed. 1.0 b:2001 Amendment 1 - Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices - General IEC 60747-5-1 Amd.2 Ed. 1.0 b:2002 Amendment 2 - Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices - General IEC 60747-5-1 Ed. 1.2 b:2002 Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices General Deals with the terminology relating to the semiconductor optoelectronic devices. IEC 60747-5-2 Amd.1 Ed. 1.0 b:2002 Amendment 1 - Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics IEC 60747-5-2 Ed. 1.0 b:1997 Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices Essential ratings and characteristics "Gives the essential ratings and characteristics of the following categories or subcategories of optoelectronic devices which are not intended to be used in the field of fibre optic systems or subsystems: Semiconductor photoemitters, semiconductor photoelectric detectors, semiconductor photosensitive devices, and semiconductor devices utilizing the optical radiation for internal operation." IEC 60747-5-3 Amd.1 Ed. 1.0 b:2002 Amendment 1 - Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods IEC 60747-5-3 Ed. 1.0 b:1997 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices Measuring methods Describes the measuring methods applicable to the optoelectronic devices which are not intended to be used in the fibre optic systems or subsystems. IEC 60747-5-4 Ed. 1.0 b:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers "Deals with the terminology, the essential ratings and characteristics as well as the measuring methods of semiconductor lasers." IEC 60747-6 Ed. 2.0 b:2000 Semiconductor devices - Part 6: Thyristors "Provides standards for the following categories of discrete semi-conductor devices: - (reverse-blocking) (triode) thyristors, - asymmetrical (reverse-blocking) (triode) thyristors, reverse-conducting (triode) thyristors, - bidirectional triode thyristors (triacs), - gate turn-off thyristors (GTO thyristors)." IEC 60747-6-1 Ed. 1.0 b:1989 "Semiconductor devices - Discrete devices - Part 6: Thyristors - Section One: Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, up to 100 A" IEC 60747-6-2 Ed. 1.0 b:1991 "Semiconductor devices - Discrete devices - Part 6: Thyristors - Section Two: Blank detail specification for bidirectional triode thyristors (triacs), ambient or case-rated, up to 100 A" IEC 60747-6-3 Ed. 1.0 b:1993 "Semiconductor devices - Discrete devices - Part 6: Thyristors - Section Three: Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A" IEC 60747-7 Ed. 2.0 b:2000 Semiconductor discrete devices and integrated circuits - Part 7: Bipolar transistors Gives the requirements applicable to the following sub-categories of bipolar transistors: -low power signal transistors (excluding switching applications); -power transistors (excluding switching and high-frequency applications); -high-frequency power transistors for amplifier and oscillator applications; -switching transistors. IEC 60747-7-1 Ed. 1.0 b:1989 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section One: Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification IEC 60747-7-2 Ed. 1.0 b:1989 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Two: Blank detail specification for case-rated bipolar transistors for low-frequency amplification IEC 60747-7-3 Ed. 1.0 b:1991 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section three: Blank detail specification for bipolar transistors for switching applications IEC 60747-7-4 Ed. 1.0 b:1991 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification IEC 60747-7-5 Ed. 1.0 en:2005 Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications This part of IEC 60747 gives requirements for bipolar switching transistors used for power switching application above 1 A. NOTE: Requirements concerning bipolar transistors in general can be found in IEC 60747-7. IEC 60747-8-1 Ed. 1.0 b:1987 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz IEC 60747-8-2 Ed. 1.0 b:1993 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section two: Blank detail specification for field-effect transistors for case-rated power amplifier applications IEC 60747-8-3 Ed. 1.0 b:1995 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field effect transistors for switching applications IEC 60747-8-4 Ed. 1.0 b:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type. IEC 60747-9 Amd.1 Ed. 1.0 b:2001 Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs) IEC 60747-9 Ed. 1.1 b:2001 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) "Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs)." IEC 60748-1 Ed. 2.0 b:2002 Semiconductor devices - Integrated circuits - Part 1: General "Constitutes the general part of IEC 60748. Together with the relevant material of IEC 60747-1, it gives general information on integrated circuits. " IEC 60748-11 Amd.1 Ed. 1.0 b:1995 Amendment 1 - Semiconductor devices Integrated circuits - Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits IEC 60748-11 Amd.2 Ed. 1.0 b:1999 Amendment 2 - Semiconductor devices Integrated circuits - Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits IEC 60748-11 Ed. 1.0 b:1990 Semiconductor devices - Integrated circuits - Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits "Applies to encapsulated semiconductor integrated circuits, including multichip integrated circuits, but excluding hybrid circuits. Gives details of the Quality Assessment Procedures, the inspection requirements, screening sequences, sampling requirements, test and measurement procedures required for the assessment of semiconductor integrated circuits, including digital, analogue and interface circuits. " IEC 60748-11-1 Ed. 1.0 b:1992 Semiconductor devices - Integrated circuits - Part 11 - Section 1: Internal visual examination for semiconductor integrated circuits excluding hybrid circuits IEC 60748-2 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits This publication gives standards for the following categories or sub-categories of devices: -Combinatorial and sequential digital circuits; -Integrated circuit memories; -Integrated circuit microprocessors; -Charge-transfer devices. Should be used together with IEC 60747-1 and 60748-1. IEC 60748-2-1 Ed. 1.0 b:1991 Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section One: Blank detail specification for bipolar monolithic digital integrated circuit gates (excluding uncommitted logic arrays) IEC 60748-2-10 Ed. 1.0 b:1994 Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section 10: Blank detail specification for integrated circuit dynamic read/write memories IEC 60748-2-11 Ed. 1.0 b:1999 "Semiconductor devices - Integrated circuits - Part 2-11: Digital integrated circuits - Blank detail specification for single supply integrated circuit, electrically erasable, and programmable read-only memory " IEC 60748-2-12 Ed. 1.0 b:2001 Semiconductor devices - Integrated circuits part2-12: Digital integrated circuits - Blank detail specification for programmable logic devices (PLDs) IEC 60748-2-2 Amd.1 Ed. 1.0 b:1994 "Amendment 1 - Semiconductor devices. Integrated circuits - Part 2: Digital integrated circuits - Section two: Family specification for HCMOS digital integrated circuits, series 54/74 HC, 54/74 HCT, 54/74 HCU" IEC 60748-2-2 Ed. 1.0 b:1992 "Semiconductor devices. Integrated circuits - Part 2: Digital integrated circuits - Section two: Family specification for HCMOS digital integrated circuits, series 54/74 HC, 54/74 HCT, 54/74 HCU" IEC 60748-2-20 Ed. 1.0 b:2000 Semiconductor devices - Integrated circuits Part 2-20: Digital integrated circuits - Family specification - Low voltage integrated circuits "The dimensions of integrated circuit devices being continually reduced, to obtain better performance and higher density, the electric fields within the die will increase, which leads to reduced reliability. This standard aims at giving interface specifications for various sets of values, where each comprises the nominal value of power supply voltage, its tolerances, and the worst-case limit values of the input and output voltages for low voltage integrated circuits." IEC 60748-2-3 Ed. 1.0 b:1992 "Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section three: Blank detail specification for HCMOS digital integrated circuits (series 54/74 HC, 54/74 HCT, 54/74 HCU)" IEC 60748-2-4 Ed. 1.0 b:1992 "Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section four: Family specification for complementary MOS digital integrated circuits, series 4000 B and 4000 UB" IEC 60748-2-5 Ed. 1.0 b:1992 Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section five: Blank detail specification for complementary MOS digital integrated circuits (series 4000 B and 4000 UB) IEC 60748-2-6 Ed. 1.0 b:1991 Semiconductor devices. Integrated circuits - Part 2: Digital integrated circuits - Section Six: Blank detail specification for microprocessor integrated circuits IEC 60748-2-7 Ed. 1.0 b:1992 Semiconductor devices. Integrated circuits - Part 2: Digital integrated circuits - Section seven: Blank detail specification for integrated circuit fusible-link programmable bipolar read-only memories IEC 60748-2-8 Ed. 1.0 b:1993 Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section Eight: Blank detail specification for integrated circuit static read/write memories IEC 60748-2-9 Ed. 1.0 b:1994 Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section 9: Blank detail specification for MOS ultraviolet light erasable electrically programmable read-only memories IEC 60748-20 Amd.1 Ed. 1.0 b:1995 Amendment 1 - Semiconductor devices. Integrated circuits. Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits IEC 60748-20 Amd.1 Ed. 1.0 b:1995 Amendment 1 - Semiconductor devices. Integrated circuits. Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits IEC 60748-20 Ed. 1.0 b:1988 Semiconductor devices. Integrated circuits. Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits "Applies to film integrated circuits and to hybrid film integrated circuits both passive and active. Applies also to partly-completed F and HFICs supplied to customers for subsequent processing as well as to chip carrier circuits having more than one chip, provided that they have been interconnected by film interconnection techniques. This specification defines the quality assessment procedures and the methods for electrical, climatic, mechanical and endurance tests. It outlines the requirements which shall be applied to the release of circuits using either qualification approval procedures or capability approval procedures. " IEC 60748-20-1 Ed. 1.0 b:1994 Semiconductor devices - Integrated circuits - Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits - Section 1: Requirements for internal visual examination "The purpose of these examinations is to check the internal materials, construction and workmanship of film and hybrid integrated circuits (F and HFICs). These examinations will normally be used prior to tapping or encapsulation to detect and eliminate the F and HFICs with internal defects that could lead to device failure in normal application. Other acceptance criteria may be agreed upon with the purchaser or supplier, respectively. " IEC 60748-21 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part 21: Sectional specification for film integrated circuits and hybrid film integrated circuits on the basis of qualification approval procedures "Applies to film and hybrid film integrated circuits, manufactured as catalogue or as custom-built products whose quality is assessed on the basis of Qualification Approval. Presents preferred values for rating and characteristics, selects from the generic specification the appropriate tests and measuring methods and gives general performance requirements to be used in detail specifications for film and hybrid film integrated circuits. " IEC 60748-21-1 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part 21-1: Blank detail specification for film integrated circuits and hybrid film integrated circuits on the basis of qualification approval procedures IEC 60748-22 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part 22: Sectional specification for film integrated circuits and hybrid film integrated circuits on the basis of the capability approval procedures "Applies to film and hybrid film integrated circuits (F and HICs), manufactured as catalogue or as custom-built circuits whose quality is assessed on the basis of the capability approval procedure. Presents preferred values for ratings and characteristics, selects from the generic specification the appropriate tests and measuring methods and gives general performance requirements to be used in detail specifications for film and hybrid film integrated circuits. " IEC 60748-22-1 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part 22-1: Blank detail specification for film integrated circuits and hybrid film integrated circuits on the basis of the capability approval procedures IEC 60748-23-1 Ed. 1.0 en:2002 Semiconductor devices - Integrated circuits - Part 23-1: Hybrid integrated circuits and film structures - Manufacturing line certification - Generic specification Applies to high quality hybrid integrated circuits (with films) incorporating special customer quality and reliability requirements. Hybrid integrated circuits may be fully or partly completed. Partly completed devices are those that may be supplied to customers for further processing. IEC 60748-23-2 Ed. 1.0 en:2002 Semiconductor devices - Integrated circuits - Part 23-2: Hybrid integrated circuits and film structures - Manufacturing line certification - Internal visual inspection and special tests "Applies to high quality approval systems for hybrid integrated circuits and film structures. The purpose of the tests is to perform visual inspections on the internal materials, construction and workmanship of hybrid, multichip and multichip module microcircuits and passive elements used for microelectronic applications including r.f./microwave. These tests will normally be used on microelectronic devices prior to capping or encapsulation to detect and eliminate devices with internal non-conformances that could lead to device failure in normal application. They may also be employed on a sampling basis to determine the effectiveness of the manufacturers' quality control and handling procedures." IEC 60748-23-3 Ed. 1.0 en:2002 Semiconductor devices - Integrated circuits - Part 23-3: Hybrid integrated circuits and film structures - Manufacturing line certification - Manufacturers' self-audit checklist and report Applies to a high quality approval system for hybrid integrated circuits and film structures.This checklist is intended for the use of a hybrid microcircuit manufacturer's internal assessment team. It will provide the hybrid manufacturer and the National Supervising Inspectorate with ongoing information on process control demonstrating compliance with IEC 60748-23-1. IEC 60748-23-4 Ed. 1.0 en:2002 Semiconductor devices - Integrated circuits - Part 23-4: Hybrid integrated circuits and film structures - Manufacturing line certification - Blank detail specification Serves as a Blank Detail Specification for a high quality approval system and contains requirements for style and layout and minimum content of detail specifications. These requirements are applicable when the detail specification is published. IEC 60748-23-5 Ed. 1.0 en:2003 "Semiconductor devices - Integrated circuits, Part 23-5: Hybrid integrated circuits and film structures - Manufacturing line certification - Procedure for qualification approval" Applies to high quality hybrids (with films) incorporating special customer quality and reliability requirements whose quality is assessed on the basis of Qualification Approval. NOTE: Hybrid integrated circuits may be fully or part completed. IEC 60748-3 Amd.1 Ed. 1.0 b:1991 Amendment 1 - Semiconductor devices. Integrated circuits. Part 3: Analogue integrated circuits IEC 60748-3 Amd.2 Ed. 1.0 b:1994 Amendment 2 - Semiconductor devices. Integrated circuits. Part 3: Analogue integrated circuits IEC 60748-3 Ed. 1.0 b:1986 Semiconductor devices. Integrated circuits. Part 3: Analogue integrated circuits "Gives standards on the following sub-categories of analogue integrated circuits: -operational amplifiers (having two inputs and one output); -audio-amplifiers, video-amplifiers and multichannel amplifiers for telecommunications; -R.F. and I.F. amplifiers; -voltage and current regulators; -analogue signal switching circuits. Should be used with IEC 60747-1 and 60748-1. " IEC 60748-3-1 Ed. 1.0 b:1991 Semiconductor devices. Integrated circuits - Part 3: Analogue integrated circuits - Section one: Blank detail specification for monolithic integrated operational amplifiers IEC 60748-4 Ed. 2.0 b:1997 Semiconductor devices - Integrated circuits - Part 4: Interface integrated circuits "Gives requirements for the following categories of interface integrated circuits:line circuits (transmitters and receivers), sense amplifiers, peripheral drivers (including memory drivers) and level shifters, voltage comparators, linear and non-linear analogue-to digital and digital-to-analogue converters, control circuits for switch-mode power supplies, companding PCM coder-decoders (CODEC), digital interface integrated circuits (UBF), integrated service digital network (ISDN). " IEC 60748-4-1 Ed. 1.0 b:1993 Semiconductor devices - Integrated circuits - Part 4: Interface integrated circuits - Section 1: Blank detail specification for linear digital-to-analogue converters (DAC) IEC 60748-4-2 Ed. 1.0 b:1993 Semiconductor devices - Integrated circuits - Part 4: Interface integrated circuits - Section 2: Blank detail specification for linear analogue-to-digital converters (ADC) IEC 60748-4-3 Ed. 1.0 en:2006 Semiconductor devices - Integrated circuits - Part 4-3: Interface integrated circuits - Dynamic criteria for analogue-digital converters (ADC) "Specifies a set of measuring methods and requirements for testing ADCs under dynamic conditions, together with associated terminology and characteristics" IEC 60748-5 Ed. 1.0 b:1997 Semiconductor devices - Integrated circuits - Part 5: Semicustom integrated circuits "Specifies standards on the subcategories of semicustom integrated circuits. Provides basic information on terminology and graphical symbols, essential ratings and characteristics, functional specifications, measuring methods, acceptance and reliability." IEC 60749-1 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 1: General Applicable to semiconductor devices (discrete devices and integrated circuits) and establishes provisions common to all the other parts of the series. IEC 60749-10 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock "Describes a shock test intended to determine the suitability of component parts for use in electronic equipment which may be subjected to moderately severe shocks as a result of suddenly applied forces or abrupt changes in motion produced by rough handling, transportation, or field operation. Shock of this type may disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test. It is normally applicable to cavity-type packages." IEC 60749-11 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 11: Rapid change of temperature - Two-fluid-bath method "Defines the rapid change of temperature test method and the two-fluid-bath method. This test method may also be used, employing fewer cycles, to test the effect of immersion in heated liquids that are used for the purpose of cleaning devices. This test is applicable to all semiconductor devices. It is considered destructive unless otherwise detailed in the relevant specification." IEC 60749-12 Ed. 1.0 b:2002 "Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency" "Describes a test to determine the effect of variable frequency vibration, within the specified frequency range, on internal structural elements. This is a destructive test. It is normally applicable to cavity-type packages." IEC 60749-13 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere Describes a salt atmosphere test that determines the resistance of semiconductor devices to corrosion. It is an accelerated test that simulates the effects of severe sea-coast atmosphere on all exposed surfaces. It is only applicable to those devices specified for a marine environment. The salt atmosphere test is considered destructive. IEC 60749-14 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic test methods - Part 14: Robustness of terminations (lead integrity) Provides various tests for determining the integrity between the lead/package interface and the lead itself when the lead(s) are bent due to faulty board assembly followed by rework of the part for re-assembly. Applicable to all through-hole devices and surface-mount devices requiring lead forming by the user. IEC 60749-15 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices "Describes a test used to determine whether encapsulated solid state devices used for through-hole mounting can withstand the effects of the temperature to which they are subjected during soldering of their leads, by using wave soldering or a soldering iron." IEC 60749-16 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND) "Defines a test aiming at detecting the presence of loose particles inside a cavity device such as, for example, chips of ceramic, pieces of bonding wire or solder balls (prills)." IEC 60749-17 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation Used to determine the susceptibility of semiconductor devices to degradation in the neutron environment. Applicable to integrated circuits and discrete semiconductor devices. IEC 60749-18 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose) Provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 gamma ray source. Proposes an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects. It is intended for military- and space-related applications. IEC 60749-19 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength Determines the integrity of materials and procedures used to attach semiconductor die to package headers or other substrates. Generally only applicable to cavity packages or as a process monitor. IEC 60749-2 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure Covers the testing of low air pressure on semiconductor devices. The test is intended primarily to determine the ability of component parts and materials to avoid voltage breakdown failures due to the reduced dielectric strength of air and other insulating materials at reduced pressures is only applicable to devices where the operating voltage exceeds 1 000 V. This test is applicable to all semiconductor devices provided they are in cavity type packages. The test is intended for military and space-related applications only. IEC 60749-20 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic-encapsulated SMDs to the combined effect of moisture and soldering heat Applies to semiconductor devices (discrete devices and integrated circuits) - and provides a means of assessing the resistance to soldering heat of plastic-encapsulated surface mount devices. IEC 60749-21 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability "Establishes a standard procedure for determining the solderability of device package terminations that are intended to be joined to another surface using tin-lead or lead-free solder for the attachment. Provides a procedure for 'dip and look' solderability testing of through hole, axial and surface mount devices as well as an optional procedure for a board mounting solderability test for SMDs for the purpose of allowing simulation of the soldering process to be used in the device application." IEC 60749-22 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength "Applicable to semiconductor devices (discrete devices and integrated circuits), this test measures bond strength or determine compliance with specified bond strength requirements" IEC 60749-23 Ed. 1.0 b:2004 Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life "This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring." IEC 60749-24 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance - Unbiased HAST The unbiased highly accelerated stress test is performed for the purpose of evaluating the reliability of non-hermetically packaged solid-state devices in humid environments. It employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material or along the interface between the external protective material and the metallic conductors which pass through it. IEC 60749-25 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling "Provides a test procedure for determining the ability of semiconductor devices and components and/or board assemblies to withstand mechanical stresses induced by alternating high and low temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses. Applies to single, dual and triple chamber temperature cycling and covers component and solder interconnection testing." IEC 60749-26 Ed. 2.0 b:2006 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) "Establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The objective is to provide reliable, repeatable HBM ESD test results so that accurate classifications can be performed. This test method is applicable to all semiconductor devices and is classified as destructive." IEC 60749-27 Ed. 2.0 b:2006 Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM) "Establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined machine model (MM) electrostatic discharge (ESD). It may be used as an alternative test method to the human body model ESD test method. The objective is to provide reliable, repeatable ESD test results so that accurate classifications can be performed. This test method is applicable to all semiconductor devices and is classified as destructive" IEC 60749-29 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test "Covers the I-test and the overvoltage latch-up testing of integrated circuits. The purpose of this test is to establish a method for determining integrated circuit latch-up characteristics and to define latch-up failure criteria. Latch-up characteristics are used in determining product reliability and minimizing ""No Trouble Found"" and ""Electrical Overstress"" failures due to latch-up." IEC 60749-3 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual inspection "Aims at verifying that the materials, design, construction, markings, and workmanship of a semiconductor device are in accordance with the applicable procurement document. External visual inspection is a non-destructive test and applicable for all package types." IEC 60749-30 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing Establishes a standard procedure for determining the preconditioning of non-hermetic surface mount devices (SMDs) prior to reliability testing. The test method defines the preconditioning flow for non-hermetic solid-state SMDs representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence described in this standard prior to being submitted to specific in-house reliability testing in order to evaluate long term reliability. IEC 60749-31 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 31: Flammability of plastic-encapsulated devices (internally induced) "Applicable to semiconductor devices (discrete devices and integrated circuits), this test determines whether the device ignites due to internal heating caused by excessive overloads." IEC 60749-32 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 32: Flammability of plastic-encapsulated devices (externally induced) "Applicable to semiconductor devices (discrete devices and integrated circuits), this test determines whether the device ignites due to external heating. The test uses a needle flame, simulating the effect of small flames which may result from fault conditions within equipment containing the device." IEC 60749-33 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic test methods - Part 33: Accelerated moisture resistance - Unbiased autoclave "The unbiased autoclave test is performed to evaluate the moisture resistance integrity of non-hermetically packaged solid-state devices using moisture condensing or moisture saturated steam environments. It is a highly accelerated test which employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material or along the interface between the external protective material and the metallic conductors passing through it. " IEC 60749-34 Ed. 1.0 b:2005 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling Used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed causing rapid changes of temperature. The power cycling test is complementary to high temperature operating life. IEC 60749-35 Ed. 1.0 b:2006 Semiconductor devices - Mechanical and climatic test methods - Part 35: Acoustic microscopy for plastic encapsulated electronic components "Defines the procedures for performing acoustic microscopy on plastic encapsulated electronic components. Provides a guide to the use of acoustic microscopy for detecting anomalies (delamination, cracks, mould-compound voids, etc.) reproducibly and non-destructively in plastic packages." IEC 60749-36 Ed. 1.0 b:2003 "Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state" Provides a test for determining the effects of constant acceleration on cavity-type semiconductor devices. It is an accelerated test designed to indicate types of structural and mechanical weaknesses not necessarily detected in shock and vibration test. IEC 60749-39 Ed. 1.0 b:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components Detailed the procedures for the measurement of the characteristic properties of moisture diffusivity and water solubility in organic materials used in the packaging of semiconductor components. These two material properties are important parameters for the effective reliability performance of plastic packaged semiconductors after exposure to moisture and being subjected to high-temperature solder reflow. IEC 60749-4 Ed. 1.0 b:2002 "Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)" Provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments. IEC 60749-5 Ed. 1.0 b:2003 Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test Provides a steady-state temperature and humidity bias life test for the purpose of evaluating the reliability of non-hermetic packaged solid-state devices in humid environments. IEC 60749-6 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature Aims at testing and determining the effect on all semiconductor electronic devices of storage at elevated temperature without electrical stress applied. This test is considered non-destructive. IEC 60749-7 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases Aims at testing and measuring the water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. Applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace. IEC 60749-8 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing "Applicable to semiconductor devices (discrete devices and integrated circuits), it determines the leak rate of semiconductor devices." IEC 60749-9 Ed. 1.0 b:2002 Semiconductor devices - Mechanical and climatic test methods - Part 9: Permanence of marking Aims at testing and verifying that the markings on semiconductor devices will not become illegible when subject to solvents or cleaning solutions commonly used during the removal of solder flux residue from the printed circuit board assembly process. This test is applicable for all package types. The test should be considered non-destructive. IEC 62007-2 Amd.1 Ed. 1.0 b:1998 Amendment 1 - Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods IEC 62007-2 Ed. 1.1 b:1999 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods Describes the measuring methods applicable to the semiconductor devices to be used in the field of fibre optic systems and subsystems. IEC 62047-1 Ed. 1.0 b:2005 Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions This part of IEC 62047 defines terms for micro-electromechanical devices including the process of production of such devices. IEC 62047-2 Ed. 1.0 b:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials "Specifies the method for tensile testing of thin film materials with length and width under 1 mm and thickness under 10 m, which are main structural materials for micro-electromechanical systems (MEMS), micromachines and similar devices. The main structural materials for MEMS, micromachines and similar devices have special features such as typical dimensions in the order of a few microns, a material fabrication by deposition, and a test piece fabrication by non-mechanical machining using etching and photolithography. This International Standard specifies the testing method, which enables a guarantee of accuracy corresponding to the special features. " IEC 62047-3 Ed. 1.0 b:2006 Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing "Specifies a standard test piece, which is used to guarantee the propriety and accuracy of a tensile testing system for thin film materials with length and width under 1 mm and thickness under 10 m, which are main structural materials for microelectromechanical systems (MEMS), micromachines and similar devices. It is based on such a concept that a tensile testing system can be guaranteed in propriety and accuracy, when the measured tensile strengths of the standard test pieces, whose tensile strength is pre-determined, are within the designated range. It also specifies the test pieces to minimize characteristics deviation among the pieces. " IEC 60747-2 Ed. 2.0 b:2000 Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes "Gives standards for rectifier diodes such as avalanche, controlled avalanche or fast-switching rectifier diodes. " IEC 61643-321 Ed. 1.0 b:2001 Components for low-voltage surge protective devices - Part 321: Specifications for avalanche breakdown diode (ABD) "Is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and signalling networks. Test specifications in this standard are for single ABDs consisting of two terminals. However, multiple ABDs may be assembled within a single package defined as a diode array. Each diode within the array can be tested to this specification. This standard contains a series of test criteria for determining the electrical characteristics of the ABD. From the standard test methods described herein, the performance characteristics and ratings of the ABD can be verified or established for specific packaged designs." IEC 60700-1 Amd.1 Ed. 1.0 b:2003 Amendment 1 - Thyristor valves for high voltage direct current (HVDC) power transmission - Part 1: Electrical testing IEC 60700-1 Ed. 1.1 b:2003 Thyristor valves for high voltage direct current (HVDC) power transmission - Part 1: Electrical testing "Applies to thyristor valves with metal oxide surge arresters directly connected between the valve terminals, for use in a line commuted commutated converter for high voltage d.c. power transmission or as part of a back-to-back link. Retricted to electrical type and production tests. Tests are based on air insulated valves. " IEC 61643-341 Ed. 1.0 b:2001 Components for low-voltage surge protective devices - Part 341: Specification for thyristor surge suppressors (TSS) " Is a test specification standard for thyristor surge suppressor (TSS) components designed to limit overvoltages and divert surge currents by clipping and crowbarring actions. Such components are used in the construction of surge protective devices, particularly as they apply to telecommunications. This standard contains information on -terms, letter symbols, and definitions -basic functions, configurations and component structure -service conditions and fault modes -rating verification and characteristic measurement." IEC 61954 Amd.1 Ed. 1.0 b:2003 Amendment 1 - Power electronics for electrical transmission and distribution systems - Testing of thyristor valves for static VAR compensators IEC 61954 Ed. 1.1 b:2003 Power electronics for electrical transmission and distribution systems - Testing of thyristor valves for static VAR compensators "Defines type, production and optional test on thyristor valves used in thyristor controlled reactots (TCR), Thyristor switched reactor (TSR) and thyristor switched capacitors (TSC) forming part of static VAR compensators (SVC) for power system applications. the requirements of the standard apply both to single valve units (one phase) and to multiple valve units (several phases). Clauses 4 to 7 detail the type tests, clause 8 covers the production tests, clauses 9 and 7 detail optional tests." IEC 60050-561 Amd.1 Ed. 1.0 t:1995 Amendment 1 - International Electrotechnical Vocabulary - Chapter 561: Piezoelectric devices for frequency control and selection IEC 60050-561 Amd.2 Ed. 1.0 t:1997 Amendment 2 - International Electrotechnical Vocabulary - Chapter 561: Piezoelectric devices for frequency control and selection IEC 60050-561 Ed. 1.0 t:1991 International Electrotechnical Vocabulary Chapter 561: Piezoelectric devices for frequency control and selection IEC 61240 Ed. 1.0 b:1994 Piezoelectric devices - Preparation of outline drawings of surface-mounted devices (SMD) for frequency control and selection - General rules Sets out general rules for drawing all dimensional anad geometrical characteristics of a surface-mounted piezoelectric device package in order to ensure mechanical interchangeability of all outline drawings. IEC 61837-1 Ed. 1.0 b:1999 Surface mounted piezoelectric devices for frequency control and selection - Standard outlines and terminal lead connections - Part 1: Plastic moulded enclosure outlines Deals with standard outlines and terminal lead connections as they apply to surface mounted devices for frequency control and selection in plastic moulded enclosures and is based on IEC 61240. IEC 61837-2 Ed. 1.0 b:2000 Surface mounted piezoelectric devices for frequency control and selection - Standard outlines and terminal lead connections - Part 2: Ceramic enclosures Deals with standard outlines and terminal lead connections as they apply to surface mounted devices for frequency control and selection in ceramic enclosures and is based on IEC 61240. IEC 61837-3 Ed. 1.0 b:2000 Surface mounted piezoelectric devices for frequency control and selection - Standard outlines and terminal lead connections - Part 3: Metal enclosures Deals with standard outlines and terminal lead connections as they apply to surface mounted devices for frequency control and selection in metal enclosures and is based on IEC 61240. IEC 61837-4 Ed. 1.0 en:2004 Surface mounted piezoelectric devices for frequency control and selection - Standard outlines and terminal lead connections - Part 4: Hybrid enclosure outlines Specifies the outline drawings for surface mounted piezoelectric devices with hybrid enclosure outlines. IEC/TS 61994-1 Ed. 1.0 b:2003 Piezoelectric and dielectric devices for frequency control and selection - Glossary - Part 1: Piezoelectric and dielectric resonators "Specifies the terms and definitions for piezoelectric and dielectric resonators representing the present state-of-the-art, which are intended for use in the standards and documents of IEC technical committee 49." IEC/TS 61994-2 Ed. 1.0 b:2000 Piezoelectric and dielectric devices for frequency control and selection - Glossary - Part 2: Piezoelectric and dielectric filters "Gives the terms and definitions for piezoelectric and dielectric filters representing the present state of the art, which are intended for use in the standards of IEC technical committee 49." IEC/TS 61994-3 Ed. 1.0 en:2004 Piezoelectric and dielectric devices for frequency control and selection - Glossary - Part 3: Piezoelectric and dielectric oscillators "Specifies the terms and definitions for piezoelectric and dielectric oscillators representing the present state-of-the-art, which are intended for use in the standards and documents of IEC technical committee 49. " IEC/TS 61994-4-1 Ed. 1.0 b:2001 Piezoelectric and dielectric devices for frequency control and selection - Glossary - Part 4-1: Piezoelectric materials - Synthetic quartz crystal "Is a technical specification giving the terms and definitions for synthetic quartz single crystals representing the present state-of-the-art, which are intended for manufacturing piezoelectric elements for frequency control and selection." IEC/TS 61994-4-2 Ed. 1.0 b:2003 Piezoelectric and dielectric devices for frequency control and selection - Glossary - Part 4-2: Piezoelectric and dielectric materials Piezoelectric ceramics "Specifies the terms and definitions for piezoelectric ceramics representing the present state-of-the-art, which are intended for use in the standards and documents of IEC technical committee 49." IEC/TS 61994-4-4 Ed. 1.0 en:2005 Piezoelectric and dielectric devices for frequency control and selection - Glossary - Part 4-4: Materials - Materials for Surface Acoustic Wave (SAW) devices "Specifies the terms and definitions for single crystal wafers applied for surface acoustic wave (SAW) devices representing the state of the art, which are intended for use in the standards and documents of IEC technical committee 49."