Download RF F3928

Propose
ed
RF
F3928
300W
W GaN WIDE
E-BAND PULS
SED POWER AMPLIFIER
Pa
ackage: Flanged Ceramic, 2 piin
Features
•
Wideband
d Operation 2.8G
GHz to 3.4GHz
•
Advanced
d GaN HEMT Tecchnology
•
Advanced
d Heat-Sink Tech
hnology
•
Optimized
d Evaluation Boa
ard Layout for
50ohm Op
peration
•
Integrated
d matching com
mponents for higgh
terminal impedances
•
50V Opera
ation Typical Pe
erformance
RF IN
VG
Pin 1 (CU
UT )
RF OUT
O
VD
D
Pin
n2
GND
BASE
Functio
onal Block Diagrram
o Pulsed Output Power 300W
3
o Small Signal
S
Gain 11dB
o Drain Efficiency
E
50%
o -40oC to
o 85oC Operatin
ng Temperature
e
Applications
Prod
duct Descrip
ption
•
Radar
•
The RF3928
R
is a 50V
V 300W high pow
wer discrete amplifier designed for
f S-Band pulse
ed
Air Traffic Control and Su
urveillance
radar,, Air Traffic Con
ntrol and Surveillance and gene
eral purpose bro
oadband amplifie
er
•
General Purpose
P
Broadba
and Amplifiers
appliccations. Using an
n advanced high power density Ga
allium Nitride (Ga
aN) semiconducto
or
process, these high-pe
erformance amplifiers achieve high
h output power, high
h
efficiency an
nd
ain over a broad frequency
f
range in
i a single packagge. The RF3928 is a matched GaN
flat ga
transistor packaged in
i a hermetic, flanged
f
ceramic package. This package provide
es
bility through the use of advanced heat sink and power dissipatio
on
excellent thermal stab
technologies. Ease of
o integration is accomplished
a
thrrough the incorp
poration of simple
e,
e that provide wideband
w
gain an
nd
optimized matching networks externall to the package
powerr performance in a single amplifierr
Orde
ering Information
RF392
28
3
300W
GaN Wide-B
Band Pulsed Powe
er Amplifier
RF392
28PCBA-410
Fully Assembled Evvaluation Board Optimized
O
for 2.8--3.5GHz; 50V
O
Optimum
Techn
nology Matchin
ng® Applied
G
GaAs
HBT
SiGe BiC
CMOS
GaA
As pHEMT
GaN HEMT
G
GaAs
MESFET
Si BiCMO
OS
Si CMOS
C
RF MEMS
InGaP HBT
SiGe HBTT
Si BJT
B
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum
O
Technology Matching®, Enabliing Wireless ConnectivityTM, PowerStar®
®, POLARISTM TOTAL RADIOTM and Ultim
mateBlueTM are trademarks of RFMD, LLLC. BLUETOOTH is a trademark owned by
b Bluetooth SIG, Inc., U.S.A. and license
ed for use by RFMD. All other trade nam
mes, trademarks and
registered trademarks are the prope
erty of their respective owners. ©2009
9, RF Micro Devices, Inc.
Prelim DS10
00928
7628 Thorndike Road, Greensboro, NC 27409
9-9421 – For sales or
o technical
Suppo
ort, contact RFMD att (+1) 336-678-5570
0 or sales-support@
@rfmd.com
1 of
o 10
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Source Voltage
150
Gate Source Voltage
-5 to +2
V
155
mA
Operational Voltage
50
V
Ruggedness (VSWR)
3:1
Gate Current (Ig)
V
Storage Temperature Range
-55 to +125
0
C
Operating Temperature Range (TL)
-40 to +85
0
C
200
0
C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200 0 C)
3.0E + 06
Hours
Thermal Resistance, Rth (junction to case)
0 C/W
0.89
TC =850C, DC bias only
0.27
TC =850C, 100mS pulse, 10% duty cycle
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product
qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must
not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE
Parameter
Recommended Operating Conditions
Drain Voltage (Vdsq)
Gate Voltage (Vgsq)
Drain Bias Current
Frequency of Operation
Capacitance
Crss
Ciss
Coss
DC Functional Test
Ig (off) – Gate Leakage
Id (off) – Drain Leakage
Vgs (th) – Threshold Voltage
Vds (on) – Drain Voltage at high current
RF Functional Test
Small Signal Gain
Power Gain
Input Return Loss
Output Power
Drain Efficiency
Small Signal Gain
Power Gain
Input Return Loss
Output Power
Drain Efficiency
Small Signal Gain
Power Gain
Input Return Loss
Output Power
Drain Efficiency
RF Typical Performance
Frequency Range
Small Signal Gain
Power Gain
Gain Variation with Temperature
Output Power (Psat)
Drain Efficiency
Min.
-5
Specification
Typ.
-3
440
2800
Max.
50
-2
3400
TBD
TBD
TBD
2
2.5
-4.2
0.13
9
12
9.9
54
45
54.9
53
9
12
9.5
54
45
54.5
56
9
10
9.3
54
45
Condition
V
V
mA
MHz
pF
pF
pF
Vg= -8V, Vd = 0V
Vg= -8V, Vd = 0V
Vg= -8V, Vd = 0V
mA
mA
V
V
Vg = -8V, Vd = 0V
Vg = -8V, Vd = 36V
Vd = 36V, Id = 40mA
Vg = 0V, Id = 1.5A
-5.5
dB
dB
dB
dBm
%
f=2800MHz, Pin = 30dBm [1,2]
f=2800MHz, Pin = 45dBm [1,2]
f=2800MHz, Pin = 30dBm [1,2]
f=2800MHz, Pin = 45dBm [1,2]
f=2800MHz, Pin = 45dBm [1,2]
-5.5
dB
dB
dB
dBm
%
f=3100MHz, Pin = 30dBm [1,2]
f=3100MHz, Pin = 45dBm [1,2]
f=3100MHz, Pin = 30dBm [1,2]
f=3100MHz, Pin = 45dBm [1,2]
f=3100MHz, Pin = 45dBm [1,2]
-5.5
dB
dB
dB
dBm
%
f=3400MHz, Pin = 30dBm [1,2]
f=3400MHz, Pin = 45dBm [1,2]
f=3400MHz, Pin = 30dBm [1,2]
f=3400MHz, Pin = 45dBm [1,2]
f=3400MHz, Pin = 45dBm [1,2]
MHz
dB
dB
dB/0 C
dBm
W
%
f=3200MHz, Pin = 30dBm [1,2]
Pout = 54.7dBm [1,2]
At peak output power [1,2]
Peak output power [1,2]
Peak output power [1,2]
At peak output power [1,2]
54.3
52
2800
Unit
3400
11
10
-0.015
54.7
300
48
[1] Test Conditions: Pulsed Operation, PW=100usec, DC=10%, Vds=50V, Idq=440mA, T=25ºC
[2] Performance in a standard tuned test fixture
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
2 of 10
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
Typical Performance in standard fixed tuned test fixture over temperature (pulsed at center band frequency)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 10
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
Typical Performance in standard fixed tuned test fixture (T=25°C, unless noted)
Gain/ Efficiency vs. Pout, f = 3200MHz
(Pulsed 10% duty cycle, 100uS, Vd = 50V, Idq = 440mA)
13
60
55
50
Gain (dB)
45
11
Gain
40
Drain Eff
35
10
30
25
9
Drain Efficiency (%)
12
20
15
8
10
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
Pout, Output Power (dBm)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
4 of 10
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 10
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
Pin
Function
Description
1
Gate
Gate – VG RF Input
2
Drain
Drain – VD RF Output
3
Source
Source – Ground Base
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
6 of 10
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
Bias Instruction for RF3928 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal.
3. Apply -6V to Vg.
4. Apply 50V to Vd.
5. Increase Vg until drain current reaches 440mA or desired bias point.
6. Turn on the RF input.
IMPORTANT NOTE: Depletion mode device, when biasing the device VG be applied BEFORE VD. When removing bias VD must
be removed BEFORE VG is removed. Failure to follow sequencing will cause the device to fail.
Note: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer
of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended
a small amount of thermal grease is applied to the underside of the device package. Even application and removal of
excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be bolted
to the chassis and input and output leads soldered to the circuit board.
Vg
Vd
RFIN
RFOUT
RF3928
2.8 – 3.4GHz
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
7 of 10
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
Evaluation Board Schematic
Evaluation Board Bill of Materials
Component
Value
Manufacturer
Part Number
R1
10 ohms
Panasonic
ERJ-8GEYJ100V
R2
0 ohms
Panasonic
ERJ-3GEY0R00
R3
51 ohms
Panasonic
ERJ-8GEYJ510
C1,C11
22pF
ATC
ATC100A220JT
C2, C14
12pF
ATC
ATC100A120JT
C5, C16
1000pF
Panasonic
ECJ-2VB1H102K
C6,C15
10000pF
Panasonic
ECJ-2VB1H103K
C7
120 ohms
Panasonic
ERJ-6GEYJ120V
C8,C18
10uF
Panasonic
ECA-2AM100
C9
0.7pF
ATC
ATC100A0R7BT
C10
0.2pF
ATC
ATC100A0R2BT
C17
62pF
ATC
ATC100B620JT
L1
22nH
Coilcraft
0807SQ-22N_LC
L20,L21
115 ohm, 10A
Steward
28F0181-1SR-10
L22,L23
75 ohm, 10A
Steward
35F0121-1SR-10
C3,C4,C7,C12,C13,C19
NOT POPULATED
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
8 of 10
Propose
ed
RF
F3928
300W
W GaN WIDE
E-BAND PULS
SED POWER AMPLIFIER
Evaluatio
on Board La
ayout
Device Imp
pedances
Frequencyy
Z Source (Ω)
Z Load (Ω)
2800MHzz
60.4
4 – j0.5
42.1 – j 30.5
3
3000MHzz
51.9
9 – j13.5
33.8 – j 25.7
2
3200MHzz
44.1 – j16.5
29.5 – j 8.9
3400MHzz
38.3
3 – j16.7
17.0 – j9.0
*
Device impe
edances reporrted are the measured
m
eva
aluation board
d
impeda
ances chosen
n for a tradeofff of peak pow
wer, peak efficiency and ga
ain
performa
ance across the
t entire freq
quency bandw
width.
RF MICRO DEVICES®, RFMD®, Optimum
O
Technology Matching®, Enabliing Wireless ConnectivityTM, PowerStar®
®, POLARISTM TOTAL RADIOTM and Ultim
mateBlueTM are trademarks of RFMD, LLLC. BLUETOOTH is a trademark owned by
b Bluetooth SIG, Inc., U.S.A. and license
ed for use by RFMD. All other trade nam
mes, trademarks and
registered trademarks are the prope
erty of their respective owners. ©2009
9, RF Micro Devices, Inc.
Prelim DS10
00928
7628 Thorndike Road, Greensboro, NC 27409
9-9421 – For sales or
o technical
Suppo
ort, contact RFMD att (+1) 336-678-5570
0 or sales-support@
@rfmd.com
9 of
o 10
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
REV
DESCRIPTION OF CHANGE
MODIFIED
By
DATE
1
Initial release
MP
3/17/2008
2
Updated package photo and part description
MP
6/7/2010
3
Added new format graphs, source and load impedances
Updated evaluation board BOM
MP
6/15/2010
4
Added max gate current limit
Updated Rth based on RF pulse measurements
Added Output power and drain efficiency graphs detailing the
effects of pulse width and duty cycle
Updated source and load impedances
Updated evaluation board BOM
Test limits updated based on completion of validation data
MP
8/27/2010
5
Updated Rth for pulse/DC, Max Vd, Min Eff, Min Pout,
package picture size (front page)
DR
9/28/2010.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
10 of 10