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Propose ed RF F3928 300W W GaN WIDE E-BAND PULS SED POWER AMPLIFIER Pa ackage: Flanged Ceramic, 2 piin Features • Wideband d Operation 2.8G GHz to 3.4GHz • Advanced d GaN HEMT Tecchnology • Advanced d Heat-Sink Tech hnology • Optimized d Evaluation Boa ard Layout for 50ohm Op peration • Integrated d matching com mponents for higgh terminal impedances • 50V Opera ation Typical Pe erformance RF IN VG Pin 1 (CU UT ) RF OUT O VD D Pin n2 GND BASE Functio onal Block Diagrram o Pulsed Output Power 300W 3 o Small Signal S Gain 11dB o Drain Efficiency E 50% o -40oC to o 85oC Operatin ng Temperature e Applications Prod duct Descrip ption • Radar • The RF3928 R is a 50V V 300W high pow wer discrete amplifier designed for f S-Band pulse ed Air Traffic Control and Su urveillance radar,, Air Traffic Con ntrol and Surveillance and gene eral purpose bro oadband amplifie er • General Purpose P Broadba and Amplifiers appliccations. Using an n advanced high power density Ga allium Nitride (Ga aN) semiconducto or process, these high-pe erformance amplifiers achieve high h output power, high h efficiency an nd ain over a broad frequency f range in i a single packagge. The RF3928 is a matched GaN flat ga transistor packaged in i a hermetic, flanged f ceramic package. This package provide es bility through the use of advanced heat sink and power dissipatio on excellent thermal stab technologies. Ease of o integration is accomplished a thrrough the incorp poration of simple e, e that provide wideband w gain an nd optimized matching networks externall to the package powerr performance in a single amplifierr Orde ering Information RF392 28 3 300W GaN Wide-B Band Pulsed Powe er Amplifier RF392 28PCBA-410 Fully Assembled Evvaluation Board Optimized O for 2.8--3.5GHz; 50V O Optimum Techn nology Matchin ng® Applied G GaAs HBT SiGe BiC CMOS GaA As pHEMT GaN HEMT G GaAs MESFET Si BiCMO OS Si CMOS C RF MEMS InGaP HBT SiGe HBTT Si BJT B LDMOS RF MICRO DEVICES®, RFMD®, Optimum O Technology Matching®, Enabliing Wireless ConnectivityTM, PowerStar® ®, POLARISTM TOTAL RADIOTM and Ultim mateBlueTM are trademarks of RFMD, LLLC. BLUETOOTH is a trademark owned by b Bluetooth SIG, Inc., U.S.A. and license ed for use by RFMD. All other trade nam mes, trademarks and registered trademarks are the prope erty of their respective owners. ©2009 9, RF Micro Devices, Inc. Prelim DS10 00928 7628 Thorndike Road, Greensboro, NC 27409 9-9421 – For sales or o technical Suppo ort, contact RFMD att (+1) 336-678-5570 0 or sales-support@ @rfmd.com 1 of o 10 Proposed RF3928 300W GaN WIDE-BAND PULSED POWER AMPLIFIER Absolute Maximum Ratings Parameter Rating Unit Drain Source Voltage 150 Gate Source Voltage -5 to +2 V 155 mA Operational Voltage 50 V Ruggedness (VSWR) 3:1 Gate Current (Ig) V Storage Temperature Range -55 to +125 0 C Operating Temperature Range (TL) -40 to +85 0 C 200 0 C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200 0 C) 3.0E + 06 Hours Thermal Resistance, Rth (junction to case) 0 C/W 0.89 TC =850C, DC bias only 0.27 TC =850C, 100mS pulse, 10% duty cycle * MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE Parameter Recommended Operating Conditions Drain Voltage (Vdsq) Gate Voltage (Vgsq) Drain Bias Current Frequency of Operation Capacitance Crss Ciss Coss DC Functional Test Ig (off) – Gate Leakage Id (off) – Drain Leakage Vgs (th) – Threshold Voltage Vds (on) – Drain Voltage at high current RF Functional Test Small Signal Gain Power Gain Input Return Loss Output Power Drain Efficiency Small Signal Gain Power Gain Input Return Loss Output Power Drain Efficiency Small Signal Gain Power Gain Input Return Loss Output Power Drain Efficiency RF Typical Performance Frequency Range Small Signal Gain Power Gain Gain Variation with Temperature Output Power (Psat) Drain Efficiency Min. -5 Specification Typ. -3 440 2800 Max. 50 -2 3400 TBD TBD TBD 2 2.5 -4.2 0.13 9 12 9.9 54 45 54.9 53 9 12 9.5 54 45 54.5 56 9 10 9.3 54 45 Condition V V mA MHz pF pF pF Vg= -8V, Vd = 0V Vg= -8V, Vd = 0V Vg= -8V, Vd = 0V mA mA V V Vg = -8V, Vd = 0V Vg = -8V, Vd = 36V Vd = 36V, Id = 40mA Vg = 0V, Id = 1.5A -5.5 dB dB dB dBm % f=2800MHz, Pin = 30dBm [1,2] f=2800MHz, Pin = 45dBm [1,2] f=2800MHz, Pin = 30dBm [1,2] f=2800MHz, Pin = 45dBm [1,2] f=2800MHz, Pin = 45dBm [1,2] -5.5 dB dB dB dBm % f=3100MHz, Pin = 30dBm [1,2] f=3100MHz, Pin = 45dBm [1,2] f=3100MHz, Pin = 30dBm [1,2] f=3100MHz, Pin = 45dBm [1,2] f=3100MHz, Pin = 45dBm [1,2] -5.5 dB dB dB dBm % f=3400MHz, Pin = 30dBm [1,2] f=3400MHz, Pin = 45dBm [1,2] f=3400MHz, Pin = 30dBm [1,2] f=3400MHz, Pin = 45dBm [1,2] f=3400MHz, Pin = 45dBm [1,2] MHz dB dB dB/0 C dBm W % f=3200MHz, Pin = 30dBm [1,2] Pout = 54.7dBm [1,2] At peak output power [1,2] Peak output power [1,2] Peak output power [1,2] At peak output power [1,2] 54.3 52 2800 Unit 3400 11 10 -0.015 54.7 300 48 [1] Test Conditions: Pulsed Operation, PW=100usec, DC=10%, Vds=50V, Idq=440mA, T=25ºC [2] Performance in a standard tuned test fixture RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 2 of 10 Proposed RF3928 300W GaN WIDE-BAND PULSED POWER AMPLIFIER Typical Performance in standard fixed tuned test fixture over temperature (pulsed at center band frequency) RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 3 of 10 Proposed RF3928 300W GaN WIDE-BAND PULSED POWER AMPLIFIER Typical Performance in standard fixed tuned test fixture (T=25°C, unless noted) Gain/ Efficiency vs. Pout, f = 3200MHz (Pulsed 10% duty cycle, 100uS, Vd = 50V, Idq = 440mA) 13 60 55 50 Gain (dB) 45 11 Gain 40 Drain Eff 35 10 30 25 9 Drain Efficiency (%) 12 20 15 8 10 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 Pout, Output Power (dBm) RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 4 of 10 Proposed RF3928 300W GaN WIDE-BAND PULSED POWER AMPLIFIER RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 5 of 10 Proposed RF3928 300W GaN WIDE-BAND PULSED POWER AMPLIFIER Pin Function Description 1 Gate Gate – VG RF Input 2 Drain Drain – VD RF Output 3 Source Source – Ground Base RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 6 of 10 Proposed RF3928 300W GaN WIDE-BAND PULSED POWER AMPLIFIER Bias Instruction for RF3928 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -6V to Vg. 4. Apply 50V to Vd. 5. Increase Vg until drain current reaches 440mA or desired bias point. 6. Turn on the RF input. IMPORTANT NOTE: Depletion mode device, when biasing the device VG be applied BEFORE VD. When removing bias VD must be removed BEFORE VG is removed. Failure to follow sequencing will cause the device to fail. Note: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended a small amount of thermal grease is applied to the underside of the device package. Even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be bolted to the chassis and input and output leads soldered to the circuit board. Vg Vd RFIN RFOUT RF3928 2.8 – 3.4GHz RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 7 of 10 Proposed RF3928 300W GaN WIDE-BAND PULSED POWER AMPLIFIER Evaluation Board Schematic Evaluation Board Bill of Materials Component Value Manufacturer Part Number R1 10 ohms Panasonic ERJ-8GEYJ100V R2 0 ohms Panasonic ERJ-3GEY0R00 R3 51 ohms Panasonic ERJ-8GEYJ510 C1,C11 22pF ATC ATC100A220JT C2, C14 12pF ATC ATC100A120JT C5, C16 1000pF Panasonic ECJ-2VB1H102K C6,C15 10000pF Panasonic ECJ-2VB1H103K C7 120 ohms Panasonic ERJ-6GEYJ120V C8,C18 10uF Panasonic ECA-2AM100 C9 0.7pF ATC ATC100A0R7BT C10 0.2pF ATC ATC100A0R2BT C17 62pF ATC ATC100B620JT L1 22nH Coilcraft 0807SQ-22N_LC L20,L21 115 ohm, 10A Steward 28F0181-1SR-10 L22,L23 75 ohm, 10A Steward 35F0121-1SR-10 C3,C4,C7,C12,C13,C19 NOT POPULATED RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 8 of 10 Propose ed RF F3928 300W W GaN WIDE E-BAND PULS SED POWER AMPLIFIER Evaluatio on Board La ayout Device Imp pedances Frequencyy Z Source (Ω) Z Load (Ω) 2800MHzz 60.4 4 – j0.5 42.1 – j 30.5 3 3000MHzz 51.9 9 – j13.5 33.8 – j 25.7 2 3200MHzz 44.1 – j16.5 29.5 – j 8.9 3400MHzz 38.3 3 – j16.7 17.0 – j9.0 * Device impe edances reporrted are the measured m eva aluation board d impeda ances chosen n for a tradeofff of peak pow wer, peak efficiency and ga ain performa ance across the t entire freq quency bandw width. RF MICRO DEVICES®, RFMD®, Optimum O Technology Matching®, Enabliing Wireless ConnectivityTM, PowerStar® ®, POLARISTM TOTAL RADIOTM and Ultim mateBlueTM are trademarks of RFMD, LLLC. BLUETOOTH is a trademark owned by b Bluetooth SIG, Inc., U.S.A. and license ed for use by RFMD. All other trade nam mes, trademarks and registered trademarks are the prope erty of their respective owners. ©2009 9, RF Micro Devices, Inc. Prelim DS10 00928 7628 Thorndike Road, Greensboro, NC 27409 9-9421 – For sales or o technical Suppo ort, contact RFMD att (+1) 336-678-5570 0 or sales-support@ @rfmd.com 9 of o 10 Proposed RF3928 300W GaN WIDE-BAND PULSED POWER AMPLIFIER REV DESCRIPTION OF CHANGE MODIFIED By DATE 1 Initial release MP 3/17/2008 2 Updated package photo and part description MP 6/7/2010 3 Added new format graphs, source and load impedances Updated evaluation board BOM MP 6/15/2010 4 Added max gate current limit Updated Rth based on RF pulse measurements Added Output power and drain efficiency graphs detailing the effects of pulse width and duty cycle Updated source and load impedances Updated evaluation board BOM Test limits updated based on completion of validation data MP 8/27/2010 5 Updated Rth for pulse/DC, Max Vd, Min Eff, Min Pout, package picture size (front page) DR 9/28/2010. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100928 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 10 of 10