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DG3257
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Vishay Siliconix
700 MHz, -3 dB Bandwidth; Single SPDT Analog Switch
DESCRIPTION
FEATURES
DG3257 is a low RON, high bandwidth analog switch
configured in single SPDT. It achieves 5  switch on
resistance, greater than 700 MHz -3 dB bandwidth with 5 pF
load, and a channel to channel crosstalk at -32 dB and
isolation at -33 dB. Fabricated with high density sub micro
CMOS process, the DG3257 provides low parasitic
capacitance, handles bidirectional signal flow with
minimized phase distortion. Guaranteed 1.4 V logic high
threshold makes it possible to interface directly with low
voltage MCUs.
• 1.65 V to 5.5 V single supply operation
The DG3257 is designed for a wide range of operating
voltages from 1.65 V to 5.5 V that can be driven directly
from one cell Li-ion battery. On-chip protection circuit
protects again fault events when V+ goes zero. Latch up
current is 300 mA, as per JESD78, and its ESD tolerance
exceeds 6 kV.
• Break before make switching
Packaged in ultra small μDFN6L (1 mm x 1 mm), it is ideal
for portable high speed mix signal switching application.
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with lead (Pb)-free device termination.
APPLICATIONS
The μDFN6L package has a nickel-palladium-gold
device termination and is represented by the lead (Pb)-free
“-GE4” suffix to the ordering part number. The
nickel-palladium-gold device terminations meet all
JEDEC® standards for reflow and MSL rating. As a further
sign of Vishay Siliconix's commitment, the DG3257 is fully
RoHS-complaint.
• Tablet, e-readers
• Low resistance: 5 /typ. at 4.2 V
• Switch ON capacitance: 10 pF typical
• -3 dB bandwidth: 700 MHz
• Power down protection
• Signal swing over V+ capable (when signal swing over V+,
signal pin current: typically (VS - 0.6 V)/120 )
• Control logic S pin voltage can go beyond V+
• Latch up current: 300 mA (JESD78)
• ESD / HBM: 6 kV,
• ESD / CDM: 1 kV
• TTL/CMOS compatible
• Smart phones
• Camera, audio devices
• Computer and peripherals
• Data storage
• IoT
• Wearable
• Portable healthcare
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
μDFN-6L 1 x 1
NO
1
6
IN
Bx
GND
2
5
V+
Pin 1
NC
3
4
COM
Top view
Device marking: Bx for DG3257
x = Date / Lot traceability code
ORDERING INFORMATION
TEMP. RANGE
PACKAGE
PART NUMBER
-40 °C to +85 °C
μDFN-6L
DG3257DN-T1-GE4
S17-0045-Rev. A, 23-Jan-17
Document Number: 75945
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG3257
www.vishay.com
Vishay Siliconix
TRUTH TABLE
PIN DESCRIPTIONS
IN
NC
NO
PIN NAME
DESCRIPTION
0
ON
OFF
IN
Logic select Input
1
OFF
ON
V+
Power pin
GND
Power ground pin
NC
Normal close data port
NO
Normal open data port
COM
Common data port
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
CONDITIONS
LIMITS
V+, S
Reference to GND
-0.3 to +6
COM, NO, NC
Reference to GND
-0.3 to +6
Pulsed at 1 ms, 10 % duty cycle
± 100
ESD / HBM
EIA / JESD22-A114-A
6000
ESD / CDM
EIA /JESD22-C101A
750
Maximum continuous switch current
UNIT
V
± 50
Maximum pulse switch current
Thermal resistance
mA
407
°C/W
V
Temperature
Operating temperature
-40 to +85
Max. operating junction temperature
150
Operating junction temperature
125
Storage temperature
°C
-65 to +150
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
V+ = 3 V, VINH = 1.3 V, VINL = 0.5 V
OTHERWISE UNLESS SPECIFIED
+25 °C
-40 °C to
+85 °C
TYP. a /
MAX.
UNIT
Analog Switch
Analog signal range
VANALOG
0 to 5.5
V+ = 1.8 V, VNC/NO = 0 V to V+, IS± = 8 mA
V+ = 3 V, VNC/NO = 0.4 V, IS± = 8 mA
Drain-source on-resistance
RDS(on)
V+ = 3.6 V, VNC/NO = 0.4 V, IS± = 8 mA
V+ = 4.2 V, VNC/NO = 0.4 V, IS± = 8 mA
V+ = 5 V, VNC/NO = 0.4 V, IS± = 8 mA
V
28
-
Typ.
47
54
Max.
7
-
Typ.
8
9
Max.
6
-
Typ.
7
8
Max.
5
-
Typ.
6
7
Max.
5
-
Typ.
5
6
Max.
2
-
Typ.
3
6
Max.
On-resistance flatness
Rflat(on)
V+ = 3 V, VNC/NO = 0 V, 1 V, IS± = 8 mA
On-resistance matching
RDS(on)
V+ = 2.7 V to 5.5 V, VS = 0 V to V+, IS± = 8 mA
Switch off leakage current
IS/Id(off)
V+ = 5.5 V, VCOM = 1 V / 4.5 V,
VNC/NO = 4.5 V / 1 V
± 0.2
-
Typ.
-
± 20
Max.
Id(on)
V+ = 5.5 V, VCOM = 1 V / 4.5 V,
VNC/NO = open
± 0.2
-
Typ.
-
± 20
Max.
ICOM(PD)
V+ = 0 V, VCOM = 4.5 V
1
-
Max.
Channel on leakage current
Power down leakage
S17-0045-Rev. A, 23-Jan-17
0.4
-
Typ.
0.6
0.8
Max.

nA
μA
Document Number: 75945
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG3257
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
V+ = 3 V, VINH = 1.3 V, VINL = 0.5 V
OTHERWISE UNLESS SPECIFIED
+25 °C
-40 °C to
+85 °C
TYP. a /
MAX.
V+ = 3 V
-
1.2
Min.
V+ = 5 V
-
1.4
Min.
V+ = 3 V
-
0.45
Max.
Max.
UNIT
Digital Control
Input voltage high
Input voltage low
VINH
VINL
Input leakage
IIN
Digital input capacitance
CIN
V+ = 5 V
V+ = 0 V, 5.5 V, VIN = VGND or V+
-
0.5
0.001
-
Typ.
-
0.230
Max.
5.6
-
Typ.
6
-
Typ.
-
2
Min.
17
-
Typ.
23
27
Max.
V
μA
pF
Dynamic Characteristics
Break-before-make-time
tOPEN
Turn-on time
tON
Turn-off time
tOFF
VNO = VNC = 1.5 V; RL = 300 , CL = 35 pF
VNC = VNO = V+; RL = 50 , CL = 35 pF
9
-
Typ.
15
19
Max.
ns
Propagation delay b
tPD
100
-
Typ.
ps
Charge injection b
QINJ
CL = 1 nF, RGEN = 0 , VCOM = 1.5 V
4
-
Typ.
pC
Off-isolation b
OIRR
-
Typ.
XTALK
RL = 50 , CL = 5 pF, f = 240 MHz
-33
Crosstalk b
-32
-
Typ.
RL = 50 , CL = 5 pF, f = 1 MHz
-0.62
-
Typ.
THD + N
RL = 600 , VPP = 0.5 Vp-p, f = 20 Hz to 20 kHz
0.025
-
Typ.
%
BW
RL = 50 , CL = 5 pF
714
-
Typ.
MHz
3
-
Typ.
9
-
Typ.
Insertion loss b
Total harmonic distortion
+ Noise b
Bandwidth, -3 dB b
Source off capacitance b
CS (off)
Drain on capacitance b
CD(on)
f = 240 MHz
dB
pF
Power Requirements
Power supply range
GND = 0 V
Digital Inputs 0 V or V+, V+ = 2.7 V to 5.5 V
Power supply current
I+
Digital inputs 1.8 V, V+ = 3 V
+1.65 / +5.5 min. / max.
0.001
-
Typ.
-
0.400
Max.
1
-
Typ.
-
1.5
Max.
V
μA
Notes
a. Typical values are for design aid only, not guaranteed nor subject to production testing.
b. Guarantee by design, not subjected to production test.
S17-0045-Rev. A, 23-Jan-17
Document Number: 75945
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG3257
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
50
10000
35
V+ = +2.7 V
25
V+ = +3 V
1st line
2nd line
1000
30
V+ = +3.3 V
20
V+ = +3.6 V
V+ = +4.2 V
15
100
10
4
1000
3
1st line
2nd line
40
2nd line
I+ - Supply Current (nA)
IS = -8 mA
V+ = +1.8 V
45
2nd line
RON - On-Resistance (Ω)
5
10000
V+ = +5 V
IN = V+ or GND
2
100
V+ = +3 V
IN = V+ or GND
1
5
V+ = +5 V
0
0
1
2
3
4
0
10
5
10
-40
-20
0
40
60
80
VD - Analog Voltage (V)
2nd line
Temperature (°C)
2nd line
RON vs. VD and Single Supply Voltage
Supply Current vs. Temperature
Axis Title
Axis Title
20
10000
2.0
10000
18
1000
12
10
8
100
6
-40 °C
4
1.5
1000
1st line
2nd line
+25 °C
14
2nd line
I+ - Supply Current (μA)
+85 °C
16
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
20
1.0
100
0.5
V+ = +3 V
IS = -8 mA
2
V+ = +3 V
Logic = 1.8 V
0
0
10
0
0.5
1
1.5
2
2.5
3
10
-40
-20
0
20
40
60
VD - Analog Voltage (V)
2nd line
Temperature (°C)
2nd line
RON vs. Analog Voltage and Temperature
Supply Current vs. Temperature
80
Axis Title
Axis Title
50
10000
14
10000
+25 °C
8
6
100
4
-40 °C
2
40
VCC = 5 V
1000
30
1st line
2nd line
1000
2nd line
QINJ - Charge Injection (pC)
+85 °C
10
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
12
20
VCC = 3 V
100
VCC = 1.8 V
10
V+ = +5 V
IS = -8 mA
0
10
0
1
2
3
4
5
0
10
0
1
2
3
4
VD - Analog Voltage (V)
2nd line
VS - Analog Voltage (V)
2nd line
RON vs. Analog Voltage and Temperature
Charge Injection vs. Analog Voltage
S17-0045-Rev. A, 23-Jan-17
5
Document Number: 75945
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG3257
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
1000
500
10000
10000
IS(OFF), VD = 1 V, VS = 4.5 V
0
V+ = +4.2 V
V+ = +3 V
0.01
100
0.001
1000
-500
IS(OFF), VD = 4.5 V, VS = 1 V
ID(OFF), VD = 4.5 V, VS = 1 V
ID(ON), VD = 4.5 V
-1000
100
-1500
ID(ON), VD = 1 V
0.0001
ID(OFF), VD = 1 V, VS = 4.5 V
V+ = +5.5 V
0.00001
10
100
1000
10K
100K
1M
-2000
10
10M
10
-40
20
40
60
80
Temperature (°C)
2nd line
Supply Current vs. Input Switching Frequency
Leakage Current vs. Temperature
Axis Title
Axis Title
-40 °C to +85 °C
1000
VIH = -40 °C
1000
1st line
2nd line
1.2
1.0
0.8
VIL = +85 °C
100
0.6
0.4
100
2nd line
I+ - Supply Current (μA)
1.6
1.4
10000
10 000
10000
1.8
1000
10
1
V+ = 4.2 V
0.1
0.01
100
V+ = 3.0 V
0.001
0.0001
0.2
0
0.00001
10
2.5
3
3.5
4
4.5
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V+ - Supply Voltage (V)
2nd line
VIN (V)
2nd line
Switching Threshold vs. Supply Voltage
Supply Current vs. VIN
Axis Title
0.040
10000
V+ = 2.7 V
0.030
V+ = 3 V
1000
1st line
2nd line
0.025
V+ = 3.3 V
0.020
V+ = 3.6 V
0.015
100
0.010
V+ = 4.2 V
Vsignal = 0.5 Vpp
RLOAD = 600 Ω
0.005
0
10
10
100
1K
10K
2nd line
Loss, OIRR, XTALK (dB)
0.035
Axis Title
10
Loss
0
-10
XTALK
-20
-30
-40
-50
-60
OIRR
-70
-80
-90
-100
V+ = +5 V
-110
100K
1M
10M
100M
Frequency (Hz)
2nd line
Frequency (Hz)
2nd line
THD + N vs. Frequency
XTALK, V+ = 5 V
S17-0045-Rev. A, 23-Jan-17
10000
1000
1st line
2nd line
2nd line
VT - Switching Threshold (V)
0
Input Switching Frequency (Hz)
2nd line
2.0
2nd line
THD + N (%)
-20
1st line
2nd line
0.1
1000
1st line
2nd line
1
1st line
2nd line
10
2nd line
Leakage Current (pA)
2nd line
I+ - Supply Current (μA)
100
100
10
1G
Document Number: 75945
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG3257
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
HSD1±
or HSD2±
Switch
Input
V+
VINL
Switch Output
D±
tr < 5 ns
tf < 5 ns
50 %
VOUT
0.9 x V OUT
Logic
Input
Switch
Output
S±
CL
35 pF
RL
50 Ω
GND
0V
tON
Logic "1" = Switch on
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = D±
(R L
RL
+ R
ON
tOFF
)
Fig. 1 - Switching Time
V+
Logic
Input
V+
D±
HSD1±
VHSD1±
VINH
tr < 5 ns
tf < 5 ns
VINL
VO
HSD2±
VHSD2±
RL
50 Ω
S±
CL
35 pF
HSD1± = HSD2±
90 %
VO
GND
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Fig. 2 - Break-Before-Make Interval
V+
Rgen
V+
HSD1±
or HSD2±
VOUT
D±
VOUT
VOUT
+
IN
S±
Vgen
CL = 1 nF
VIN = 0 - V+
On
On
Off
GND
Q=
OUT
x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Fig. 3 - Charge Injection
S17-0045-Rev. A, 23-Jan-17
Document Number: 75945
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG3257
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
V+
V+
10 nF
10 nF
V+
V+
HSD1± or HSD2±
S±
D±
0 V, 2.4 V
Meter
D±
S±
0 V, 2.4 V
RL
HSD1±
or HSD2±
GND
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
Analyzer
VD±
Off Isolation = 20 log V
HSD2± or HSD1±
Fig. 4 - Off-Isolation
Fig. 5 - Channel Off / On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75945.
S17-0045-Rev. A, 23-Jan-17
Document Number: 75945
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
0.1 C
A
0.08 C
μDFN-6L 1 mm x 1 mm Case Outline
D
A
K1
B
6
1
4
3
E
e
2x
b
0.1 C
0.07 M C A B
K2
0.1 C
K
A1
L
A2
Top view
Bottom view
C
2x
0.05 M C
Side view
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.32
0.35
0.38
0.013
0.014
0.015
A1
0.00
-
0.05
0.000
-
0.002
A2
b
0.10 Ref.
0.12
0.15
0.004 Ref.
0.18
0.005
0.006
0.007
D
0.95
1.00
1.05
0.037
0.039
0.041
E
0.95
1.00
1.05
0.037
0.039
0.041
e
0.35 BSC
K
0.30 Ref.
0.012 Ref.
K1
0.075 Ref.
0.003 Ref.
K2
L
0.014 BSC
0.05 Ref.
0.27
0.30
0.002 Ref.
0.33
0.011
0.012
0.013
Notes
(1) Use millimeters as the primary measurement.
(2) Dimensioning and tolerances conform to ASME Y14.5M-1994.
(3) N is the number of terminals.
Nd and Ne is the number of terminals in each D and E site respectively.
(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.
(5) The pin 1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body.
(6) Package warpage max. 0.05 mm.
ECN: T16-0553-Rev. A, 26-Sep-16
DWG: 6053
Revision: 26-Sep-16
Document Number: 76086
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16
1
Document Number: 91000