Download Optocoupler, Phototransistor Output, with Base Connection

4N35, 4N36, 4N37
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A
1
6 B
C
2
5 C
NC
3
4 E
• Isolation test voltage 5000 VRMS
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
21842
APPLICATIONS
• AC mains detection
i179004-5
• Reed relay driving
DESCRIPTION
• Switch mode power supply feedback
Each optocoupler consists of gallium arsenide infrared LED
and a silicon NPN phototransistor.
• Telephone ring detection
AGENCY APPROVALS
• Logic coupling with high frequency noise rejection
• Logic ground isolation
• Underwriters laboratory file no. E52744
• BSI: EN 60065:2002, EN 60950:2000
• FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156
ORDER INFORMATION
PART
REMARKS
4N35
CTR > 100 %, DIP-6
4N36
CTR > 100 %, DIP-6
4N37
CTR > 100 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
50
mA
t ≤ 10 μs
Surge current
IFSM
1
A
Pdiss
70
mW
Collector emitter breakdown voltage
VCEO
70
V
Emitter base breakdown voltage
VEBO
7
V
IC
50
mA
IC
100
mA
Pdiss
70
mW
VISO
Power dissipation
OUTPUT
Collector current
t ≤ 1 ms
Power dissipation
COUPLER
Isolation test voltage
5000
VRMS
Creepage
≥7
mm
Clearance
≥7
mm
≥ 0.4
mm
Isolation thickness between emitter
and detector
Document Number: 81181
Rev. 1.2, 07-Jan-10
For technical questions, contact: [email protected]
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153
4N35, 4N36, 4N37
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Tsld
260
°C
COUPLER
Comparative tracking index
Isolation resistance
Soldering temperature (2)
DIN IEC 112/VDE 0303, part 1
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
175
Ω
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering condditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Junction capacitance
Forward voltage (2)
Reverse current
(2)
Capacitance
VR = 0 V, f = 1 MHz
Cj
50
IF = 10 mA
VF
1.3
1.5
V
IF = 10 mA, Tamb = - 55 °C
VF
1.3
1.7
V
10
μA
0.9
VR = 6 V
IR
0.1
VR = 0 V, f = 1 MHz
CO
25
pF
pF
OUTPUT
Collector emitter breakdown
voltage(2)
Emitter collector breakdown
voltage(2)
IC = 1 mA
4N35
BVCEO
30
V
4N36
BVCEO
30
V
4N37
BVCEO
30
V
BVECO
7
V
4N35
BVCBO
70
V
4N36
BVCBO
70
V
4N37
BVCBO
70
4N35
ICEO
5
50
nA
IE = 100 μA
OUTPUT
Collector base breakdown
voltage (2)
IC = 100 μA, IB = 1 μA
VCE = 10 V, IF = 0
Collector emitter leakage current (2)
Collector emitter capacitance
V
4N36
ICEO
5
50
nA
VCE = 10 V, IF = 0
4N37
ICEO
5
50
nA
4N35
ICEO
500
μA
VCE = 30 V, IF = 0,
Tamb = 100 °C
4N36
ICEO
500
μA
4N37
ICEO
500
μA
VCE = 0
CCE
6
pF
0.6
pF
COUPLER
Resistance, input output (2)
VIO = 500 V
RIO
Capacitance, input output
f = 1 MHz
CIO
Ω
1011
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) Indicates JEDEC registered value.
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For technical questions, contact: [email protected]
Document Number: 81181
Rev. 1.2, 07-Jan-10
4N35, 4N36, 4N37
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
4N35
CTRDC
100
%
4N36
CTRDC
100
%
4N37
CTRDC
100
4N35
CTRDC
40
50
%
4N36
CTRDC
40
50
%
4N37
CTRDC
40
50
%
TEST CONDITION
SYMBOL
MIN.
TYP.
VCC = 10 V, IC = 2 mA, RL = 100 Ω
ton, toff
VCE = 10 V, IF = 10 mA
DC current transfer ratio (1)
VCE = 10 V, IF = 10 mA,
TA = - 55 °C to + 100 °C
TYP.
MAX
UNIT
%
Note
(1) Indicates JEDEC registered values.
SWITCHING CHARACTERISTICS
PARAMETER
Switching time
(1)
MAX.
10
UNIT
μs
Note
(1) Indicates JEDEC registered values.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specied
1.5
1.3
NCTR - Normalized CTR
TA = - 55 °C
1.2
TA = 25 °C
1.1
1.0
0.9
TA = 85 °C
0.8
1
10
NCTR - Normalized CTR
TA = 50 °C
0.5
NCTR(SAT)
NCTR
0.1
1
1.0
TA = 25 °C
0.5
NCTR(SAT)
Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
1.0
TA = 70 °C
0.5
NCTR(SAT)
NCTR
NCTR
0.0
i4n25_02
1
10
100
IF - LED Current (mA)
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Document Number: 81181
Rev. 1.2, 07-Jan-10
100
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) = 0.4 V
0
10
IF - LED Current (mA)
i4n25_03
Fig. 1 - Forward Voltage vs. Forward Current
1.5
1.0
100
IF - Forward Current (mA)
i4n25_01
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
0.0
0.7
0.1
NCTR - Normalized CTR
VF -Forward Voltage (V)
1.4
0.0
0.1
i4n25_04
1
10
100
IF - LED Current (mA)
Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
For technical questions, contact: [email protected]
www.vishay.com
155
4N35, 4N36, 4N37
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
NCTRcb - Normalized CTRcb
NCTR - Normalized CTR
1.5
1.0
TA = 85 °C
0.5
NCTR(SAT)
NCTR
1
10
100
IF - LED Current (mA)
i4n25_05
1
10
100
IF - LED Current (mA)
10
30
25
50 °C
20
70 °C
15
85 °C
25 °C
10
5
Normalized Photocurrent
ICE - Collector Current (mA)
25 °C
50 °C
70 °C
Fig. 8 - Normalized CTRcb vs. LED Current and Temperature
35
0
10
20
30
40
50
60
1
0.1
Nib, TA = - 20 °C
Nib, TA = 20 °C
Nib, TA = 50 °C
Nib, TA = 70 °C
i4n25_09
IF - LED Current (mA)
i4n25_06
Normalized to:
IF = 10 mA, TA = 25 °C
0.01
0.1
0
Fig. 6 - Collector Emitter Current vs.
Temperature and LED Current
1
10
100
IF - LED Current (mA)
Fig. 9 - Normalized Photocurrent vs. IF and Temperature
105
1.2
70 °C
4
NhFE - Normalized hFE
ICEO - Collector Emitter (nA)
0.5
i4n25_08
Fig. 5 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
10
1.0
0.0
0.1
0.0
0.1
Normalized to:
VCB = 9.3 V, IF = 10 mA, TA = 25 °C
103
102
VCE = 10 V
101
Typical
100
10- 1
10- 2
- 20
i4n25_07
25 °C
- 20 °C
0.8
Normalized to:
IB = 20 µA, VCE = 10 V,
TA = 25 °C
0.6
0.4
0
20
40
60
80
100
Tamb- Ambient Temperature (°C)
Fig. 7 - Collector Emitter Leakage Current vs. Temperature
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156
1.0
1
i4n25_10
10
100
1000
Ib - Base Current (µA)
Fig. 10 - Normalized Non-Saturated hFE vs.
Base Current and Temperature
For technical questions, contact: [email protected]
Document Number: 81181
Rev. 1.2, 07-Jan-10
4N35, 4N36, 4N37
NhFE(sat) - Normalized Saturated hFE
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
1.5
Normalized to:
VCE = 10 V, Ib = 20 µA
TA = 25 °C
70 °C 50 °C
VCC = 5 V
1.0
f = 10 kHz
DF = 50 %
25 °C
- 20 °C
VO
0.5
IF = 10 mA
VCE = 0.4 V
0.0
1
10
100
1000
Ib - Base Current (µA)
i4n25_11
i4n25_14
Fig. 11 - Normalized hFE vs. Base Current and Temperature
tPHL
2.0
100
1.5
10
tPLH
1
0.1
1
tPHL - Propagation Delay (µs)
IF = 10 mA, TA = 25 °C
VCC = 5.0 V, Vth = 1.5 V
i4n25_12
Fig. 14 - Switching Schematic
2.5
1000
tPLH- Propagation Delay (µs)
RL
1.0
100
10
RL - Collector Load Resistor (kΩ)
Fig. 12 - Propagation Delay vs. Collector Load Resistor
IF
tD
tR
VO
tPLH
VTH = 1.5 V
tPHL
tS
tF
i4n25_13
Fig. 13 - Switching Timing
Document Number: 81181
Rev. 1.2, 07-Jan-10
For technical questions, contact: [email protected]
www.vishay.com
157
4N35, 4N36, 4N37
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
PACKAGE DIMENSIONS in millimeters
7.62 typ.
7.12 ± 0.3
3.5 ± 0.3
6.5 ± 0.3
1.2 ± 0.1
14771_2
6
5
4
1
2 3
4.5 ± 0.3
0.5 ± 0.1
2.8 ± 0.15
4.5 ± 0.3
0.25
7.62 to 9.5 typ.
PACKAGE MARKING
4N35
V YWW 24
21764-24
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158
For technical questions, contact: [email protected]
Document Number: 81181
Rev. 1.2, 07-Jan-10
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Revision: 08-Feb-17
1
Document Number: 91000