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Form 2B City University of Hong Kong REVISED on 14 Jun 2013 wef Sem A 2013/14 Information on a Course offered by the Department of Physics and Materials Science with effect from Semester A in 2013 / 2014 This form is for completion by the Course Co-ordinator/Examiner. The information provided on this form will be deemed to be the official record of the details of the course. It has multipurpose use: for the University’s database, and for publishing in various University publications including the Blackboard, and documents for students and others as necessary. Please refer to the Explanatory Notes attached to this Form on the various items of information required. Part I Course Title: Microelectronic Materials and Processing Course Code: AP6120 Course Duration: One Semester No of Credit Units: 3 Level: P6 Medium of Instruction: English Prerequisites: Nil Precursors: Nil Equivalent Courses: Nil Exclusive Courses: AP4120 Microelectronic Materials and Processing AP8120 Microelectronic Materials and Processing Part II 1. Course Aims: To provide fundamental understanding of the various processes used in integrated circuit fabrication, with emphasis on the front-end technologies. AP6120 1 2. Course Intended Learning Outcomes (CILOs) (state what the student is expected to be able to do at the end of the course according to a given standard of performance) Upon successful completion of this course, students should be able to: No 1 2 3 4 5 CILOs Level of Importance Describe the structure of basic integrated circuits and 2 the processes used to fabricate them Apply fundamental principles to microelectronics 1 fabrication Relate technological limitations of integrated circuits 1 to fundamental principles or engineering limitations Be aware of possible future trends in the processing 2 and structure of integrated circuits Identify state-of-the-art developments in the relevant 2 area and to form innovative opinions on specific issues. Remarks: 1 is the least importance 3. Teaching and Learning Activities (TLAs) (designed to facilitate students’ achievement of the CILOs) TLAs Lectures CILO 1 CILO 2 CILO 3 CILO 4 CILO 5 Total (hrs) 6 7 7 6 -26 Either laboratory demonstration or literature review 2 5 4 1 1 13 Tutorials Total no of hours -4 3 --7 8 16 14 7 1 46 Scheduled activities: 2 hrs lecture + 1 hr tutorial, with the tutorial following the completion of one complete topic within a specific CILO 4. Assessment Tasks/Activities (designed to assess how well the students achieve the CILOs) Examination duration: 2 Percentage of coursework, examination, etc.: 40% by coursework; 60% by exam ATs CILO 1 CILO 2 CILO 3 CILO 4 CILO 5 Total (%) AP6120 Assignment Laboratory, or literature review report 3 2 4 4 3 --4 -10 10 20 2 Midterm Exam Final Exam Total (%) -4 4 2 -10 9 20 23 8 -60 14 32 30 14 10 100 5. Grading of Student Achievement: Refer to Grading of Courses in the Academic Regulations (Attachment) and to the Explanatory Notes. The grading is assigned based on students’ performance in assessment tasks/activities. Grade A The student completes all assessment tasks/activities and the work demonstrates excellent understanding of the scientific principles and the working mechanisms. He/she can thoroughly identify and explain how the principles are applied to science and technology for solving physics and engineering problems. The student’s work shows strong evidence of original thinking, supported by a variety of properly documented information sources other than taught materials. He/she is able to communicate ideas effectively and persuasively via written texts and/or oral presentation. Grade B The student completes all assessment tasks/activities and can describe and explain the scientific principles. He/she provides a detailed evaluation of how the principles are applied to science and technology for solving physics and engineering problems. He/she demonstrates an ability to integrate taught concepts, analytical techniques and applications via clear oral and/or written communication. Grade C The student completes all assessment tasks/activities and can describe and explain some scientific principles. He/she provides simple but accurate evaluations of how the principles are applied to science and technology for solving physics and engineering problems. He/she can communicate ideas clearly in written texts and/or in oral presentations. Grade D The student completes all assessment tasks/activities but can only briefly describe some scientific principles. Only some of the analysis is appropriate to show how the principles are applied to science and technology for solving physics and engineering problems. He/she can communicate simple ideas in writing and/or orally. Grade F The student fails to complete all assessment tasks/activities and/or cannot accurately describe and explain the scientific principles. He/she fails to identify and explain how the principles are applied to science and technology for solving physics and engineering problems objectively or systematically. He/she is weak in communicating ideas and/or the student’s work shows evidence of plagiarism. AP6120 3 Part III Keyword Syllabus: Semiconductor physics (2 hours) Crystal structure, energy states, carrier concentration, energy bands, donors and acceptors, Fermi-Dirac relationship, mobility, resistivity, p-n junctions, recombination, metal-oxide-silicon field effect transistors, CMOS. Crystal growth and wafer preparation (2 hours) Dislocations, electronic grade silicon, Czochralski crystal growth, impurity segregation, float-zone process, characterization, wafer preparation. Epitaxy (2 hours) Dynamic read-only memory (DRAM), latch-up, chemical vapor deposition (CVD), doping, autodoping, defects, molecular beam epitaxy (MBE), silicon-on-insulator (SOI). Oxidation (2 hours) Deal-Grove model, experimental fits, influencing factors, plasma oxidation, oxide properties. Lithography (2 hours) Cleanroom, optical lithography, equipment, masks, photoresists, pattern transfer, electron beam lithography, x-ray lithorgraphy, ion beam lithography. Etching (2 hours) Wet chemical etching, dry etching, plasma etching, reactors, ion-assisted reactions, lift-off. Polysilicon and dielectric film deposition (2 hours) Reactor design, reactions, polysilicon deposition, silicon dioxide deposition, silicon nitride and oxynitride. Diffusion (3 hours) Diffusion theory, constant-surface-concentration diffusion, constant-totaldopant diffusion, dual diffusion, extrinsic diffusion, diffusion in silicon, measurement techniques, oxide masking, lateral diffusion, diffusion in polysilicon. Ion implantation (3 hours) Ion stopping, range distributions, damage, channeling, recoils, ion implanters, implant uniformity and contamination, furnace annealing, rapid thermal annealing, shallow junction formation, silicide and polysilicon, high energy implantation, buried insulator. Metallization (2 hours) Flat-band voltage, metallization materials, physical vapor deposition, chemical vapor deposition (CVD), self-aligned silicide, metal plugs, damascene, dual damascene, chemical mechanical polishing, electromigration, metal corrosion. Testing, assembly, and packaging (2 hours) Testing, wafer preparation, die and wire bonding, flip-chip technique, hermetic and plastic packages, through-hole and surface-mount packages, tape carrier packages. AP6120 4 Recommended Reading: Text Books: Semiconductor Devices: Physics and Technology, SM Sze, Wiley 1985. VLSI Technology (2nd Edition), SM Sze (Editor), McGraw Hill 1988. Reference Books: Solid State Electronic Devices (3rd Edition), B. G. Streetman, Prentice Hall 1990. ULSI Technology, CY Chang and SM Sze (Editors), McGraw Hill 1996. Journals: IEEE Electron Device Letters IEEE Transactions on Electron Devices Semiconductor International Solid State Technology Applied Physics Letters Journal of Applied Physics Returned by: Name: Prof Paul CHU Department: AP Extension: 7724 Date: 14 Jun 2013 AP6120 5