Download Department of Physics and Materials Science

Form 2B
City University of Hong Kong
REVISED on
14 Jun 2013
wef Sem A 2013/14
Information on a Course
offered by the Department of Physics and Materials Science
with effect from Semester A in 2013 / 2014
This form is for completion by the Course Co-ordinator/Examiner. The information provided on this
form will be deemed to be the official record of the details of the course. It has multipurpose use: for
the University’s database, and for publishing in various University publications including the
Blackboard, and documents for students and others as necessary.
Please refer to the Explanatory Notes attached to this Form on the various items of information
required.
Part I
Course Title: Microelectronic Materials and Processing
Course Code: AP6120
Course Duration: One Semester
No of Credit Units: 3
Level: P6
Medium of Instruction: English
Prerequisites: Nil
Precursors: Nil
Equivalent Courses: Nil
Exclusive Courses: AP4120 Microelectronic Materials and Processing
AP8120 Microelectronic Materials and Processing
Part II
1.
Course Aims:
To provide fundamental understanding of the various processes used in
integrated circuit fabrication, with emphasis on the front-end technologies.
AP6120
1
2.
Course Intended Learning Outcomes (CILOs)
(state what the student is expected to be able to do at the end of the course
according to a given standard of performance)
Upon successful completion of this course, students should be able to:
No
1
2
3
4
5
CILOs
Level of
Importance
Describe the structure of basic integrated circuits and
2
the processes used to fabricate them
Apply fundamental principles to microelectronics
1
fabrication
Relate technological limitations of integrated circuits
1
to fundamental principles or engineering limitations
Be aware of possible future trends in the processing
2
and structure of integrated circuits
Identify state-of-the-art developments in the relevant
2
area and to form innovative opinions on specific issues.
Remarks: 1 is the least importance
3.
Teaching and Learning Activities (TLAs)
(designed to facilitate students’ achievement of the CILOs)
TLAs
Lectures
CILO 1
CILO 2
CILO 3
CILO 4
CILO 5
Total (hrs)
6
7
7
6
-26
Either laboratory
demonstration or
literature review
2
5
4
1
1
13
Tutorials
Total no of
hours
-4
3
--7
8
16
14
7
1
46
Scheduled activities: 2 hrs lecture + 1 hr tutorial, with the tutorial following the
completion of one complete topic within a specific CILO
4.
Assessment Tasks/Activities
(designed to assess how well the students achieve the CILOs)
Examination duration: 2
Percentage of coursework, examination, etc.: 40% by coursework; 60% by exam
ATs
CILO 1
CILO 2
CILO 3
CILO 4
CILO 5
Total (%)
AP6120
Assignment Laboratory, or
literature review
report
3
2
4
4
3
--4
-10
10
20
2
Midterm
Exam
Final
Exam
Total
(%)
-4
4
2
-10
9
20
23
8
-60
14
32
30
14
10
100
5.
Grading of Student Achievement: Refer to Grading of Courses in the
Academic Regulations (Attachment) and to the Explanatory Notes.
The grading is assigned based on students’ performance in assessment
tasks/activities.
Grade A
The student completes all assessment tasks/activities and the work demonstrates
excellent understanding of the scientific principles and the working mechanisms.
He/she can thoroughly identify and explain how the principles are applied to
science and technology for solving physics and engineering problems. The
student’s work shows strong evidence of original thinking, supported by a variety
of properly documented information sources other than taught materials. He/she
is able to communicate ideas effectively and persuasively via written texts and/or
oral presentation.
Grade B
The student completes all assessment tasks/activities and can describe and
explain the scientific principles. He/she provides a detailed evaluation of how the
principles are applied to science and technology for solving physics and
engineering problems. He/she demonstrates an ability to integrate taught
concepts, analytical techniques and applications via clear oral and/or written
communication.
Grade C
The student completes all assessment tasks/activities and can describe and
explain some scientific principles. He/she provides simple but accurate
evaluations of how the principles are applied to science and technology for
solving physics and engineering problems. He/she can communicate ideas clearly
in written texts and/or in oral presentations.
Grade D
The student completes all assessment tasks/activities but can only briefly
describe some scientific principles. Only some of the analysis is appropriate to
show how the principles are applied to science and technology for solving
physics and engineering problems. He/she can communicate simple ideas in
writing and/or orally.
Grade F
The student fails to complete all assessment tasks/activities and/or cannot
accurately describe and explain the scientific principles. He/she fails to identify
and explain how the principles are applied to science and technology for solving
physics and engineering problems objectively or systematically. He/she is weak
in communicating ideas and/or the student’s work shows evidence of plagiarism.
AP6120
3
Part III
Keyword Syllabus:
 Semiconductor physics (2 hours)
Crystal structure, energy states, carrier concentration, energy bands, donors
and acceptors, Fermi-Dirac relationship, mobility, resistivity, p-n junctions,
recombination, metal-oxide-silicon field effect transistors, CMOS.
 Crystal growth and wafer preparation (2 hours)
Dislocations, electronic grade silicon, Czochralski crystal growth, impurity
segregation, float-zone process, characterization, wafer preparation.
 Epitaxy (2 hours)
Dynamic read-only memory (DRAM), latch-up, chemical vapor deposition
(CVD), doping, autodoping, defects, molecular beam epitaxy (MBE),
silicon-on-insulator (SOI).
 Oxidation (2 hours)
Deal-Grove model, experimental fits, influencing factors, plasma oxidation,
oxide properties.
 Lithography (2 hours)
Cleanroom, optical lithography, equipment, masks, photoresists, pattern
transfer, electron beam lithography, x-ray lithorgraphy, ion beam
lithography.
 Etching (2 hours)
Wet chemical etching, dry etching, plasma etching, reactors, ion-assisted
reactions, lift-off.
 Polysilicon and dielectric film deposition (2 hours)
Reactor design, reactions, polysilicon deposition, silicon dioxide deposition,
silicon nitride and oxynitride.
 Diffusion (3 hours)
Diffusion theory, constant-surface-concentration diffusion, constant-totaldopant diffusion, dual diffusion, extrinsic diffusion, diffusion in silicon,
measurement techniques, oxide masking, lateral diffusion, diffusion in
polysilicon.
 Ion implantation (3 hours)
Ion stopping, range distributions, damage, channeling, recoils, ion
implanters, implant uniformity and contamination, furnace annealing, rapid
thermal annealing, shallow junction formation, silicide and polysilicon, high
energy implantation, buried insulator.
 Metallization (2 hours)
Flat-band voltage, metallization materials, physical vapor deposition,
chemical vapor deposition (CVD), self-aligned silicide, metal plugs,
damascene,
dual
damascene,
chemical
mechanical
polishing,
electromigration, metal corrosion.
 Testing, assembly, and packaging (2 hours)
Testing, wafer preparation, die and wire bonding, flip-chip technique,
hermetic and plastic packages, through-hole and surface-mount packages,
tape carrier packages.
AP6120
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Recommended Reading:
Text Books:
Semiconductor Devices: Physics and Technology, SM Sze, Wiley 1985.
VLSI Technology (2nd Edition), SM Sze (Editor), McGraw Hill 1988.
Reference Books:
Solid State Electronic Devices (3rd Edition), B. G. Streetman, Prentice Hall 1990.
ULSI Technology, CY Chang and SM Sze (Editors), McGraw Hill 1996.
Journals:
IEEE Electron Device Letters
IEEE Transactions on Electron Devices
Semiconductor International
Solid State Technology
Applied Physics Letters
Journal of Applied Physics
Returned by:
Name:
Prof Paul CHU
Department:
AP
Extension:
7724
Date:
14 Jun 2013
AP6120
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