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MMIS70R1K4P Datasheet
MMIS70R1K4P
700V 1.4Ω N-channel MOSFET
 Description
MMIS70R1K4P is power MOSFET using magnachip’s advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
 Key Parameters
 Package & Internal Circuit
Parameter
Value
Unit
VDS @ Tj,max
750
V
RDS(on),max
1.4
Ω
VTH,typ
3
V
ID
3.2
A
Qg,typ
11
nC
D
G
G
D
S
S
 Features

Low Power Loss by High Speed Switching and Low On-Resistance

100% Avalanche Tested

Green Package – Pb Free Plating, Halogen Free
 Applications

PFC Power Supply Stages

Switching Applications

Adapter

Motor Control

DC – DC Converters
 Ordering Information
Order Code
Marking
Temp. Range
Package
Packing
RoHS Status
MMIS70R1K4PTH
70R1K4P
-55 ~ 150℃
TO-251-VS
Tube
Halogen Free
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MagnaChip Semiconductor Ltd.
MMIS70R1K4P Datasheet
 Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain – Source voltage
VDSS
700
V
Gate – Source voltage
VGSS
±30
V
3.2
A
TC=25℃
2
A
TC=100℃
Continuous drain current
ID
Pulsed drain current(1)
IDM
9.6
A
Power dissipation
PD
33
W
Single - pulse avalanche energy
EAS
26
mJ
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
Diode dv/dt ruggedness(2)
dv/dt
15
V/ns
Tstg
-55 ~150
℃
Tj
150
℃
Storage temperature
Maximum operating junction
temperature
1)
2)
Note
Pulse width tP limited by Tj,max
ISD ≤ ID, VDS peak ≤ V(BR)DSS
 Thermal Characteristics
Symbol
Value
Unit
Thermal resistance, junction-case max
Rthjc
3.8
℃/W
Thermal resistance, junction-ambient max
Rthja
62.5
℃/W
Parameter
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MagnaChip Semiconductor Ltd.
MMIS70R1K4P Datasheet
 Static Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Drain – Source
Breakdown voltage
V(BR)DSS
700
-
-
V
VGS = 0V, ID=0.25mA
VGS(th)
2
3
4
V
VDS = VGS, ID=0.25mA
Zero Gate Voltage
Drain Current
IDSS
-
-
1
μA
VDS = 700V, VGS = 0V
Gate Leakage Current
IGSS
-
-
100
nA
VGS = ±30V,
RDS(ON)
-
1.26
1.4
Ω
VGS = 10V, ID = 1.0A
Gate Threshold Voltage
Drain-Source On
State Resistance
Test Condition
VDS =0V
 Dynamic Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Input Capacitance
Ciss
-
312
-
Output Capacitance
Coss
-
240
-
Unit
pF
Reverse Transfer Capacitance
Crss
-
15.4
-
Effective Output Capacitance
Energy Related (3)
Co(er)
-
13.5
-
Turn On Delay Time
td(on)
-
9
-
tr
-
20
-
Rise Time
Turn Off Delay Time
td(off)
-
33
-
tf
-
21
-
Total Gate Charge
Qg
-
11
-
Gate – Source Charge
Qgs
-
2.2
-
Gate – Drain Charge
Qgd
-
5.1
-
Gate Resistance
RG
-
7.6
-
Fall Time
Test Condition
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 0V to 560V,
VGS = 0V,f = 1.0MHz
ns
VGS = 10V, RG = 25Ω,
VDS = 350V, ID = 3.2A
nC
VGS = 10V, VDS =560V,
ID = 3.2A
Ω
VGS = 0V, f = 1.0MHz
3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
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MMIS70R1K4P Datasheet
 Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Continuous Diode Forward
Current
ISD
-
-
3.2
A
Diode Forward Voltage
VSD
-
-
1.4
V
Reverse Recovery Time
trr
-
240
-
ns
Reverse Recovery Charge
Qrr
-
1.2
-
μC
Reverse Recovery Current
Irrm
-
9.6
-
A
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Test Condition
ISD = 3.2 A, VGS = 0 V
ISD = 3.2 A
di/dt = 100 A/μs
VDD = 100 V
MagnaChip Semiconductor Ltd.
MMIS70R1K4P Datasheet

Characteristic Graph
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MagnaChip Semiconductor Ltd.
MMIS70R1K4P Datasheet
Jan. 2016 Revision 2.0
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MagnaChip Semiconductor Ltd.
MMIS70R1K4P Datasheet
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MagnaChip Semiconductor Ltd.
MMIS70R1K4P Datasheet
 Physical Dimension
TO251-3L (IPAK-VSL)
Dimensions are in millimeters, unless otherwise specified
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MMIS70R1K4P Datasheet
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Jan. 2016 Revision 2.0
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