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FMV20N60S1 http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Outline Drawings [mm] Equivalent circuit schematic TO-220F(SLS) ②Drain Applications For switching ① ②③ ① Gate ③Source Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratings at TC =25°C (unless otherwise specified) Description Pulsed Drain Current Gate-Source Voltage IDP VGS Characteristics 600 600 ±20 ±12.6 ±60 ±30 Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 A Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt EAS dVDS /dt dV/dt -di/dt mJ kV/μs kV/μs A/μs Maximum Power Dissipation PD 472.2 50 15 100 2.16 53 150 -55 to +150 2 Drain-Source Voltage Continuous Drain Current Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID Tch Tstg Viso Unit V V A A A V W °C °C kVrms Remarks VGS=-30V Tc=25°C Tc=100°C Note*1 Note*1 Note *2 Note *3 VDS ≤ 600V Note *4 Note *5 Ta =25°C Tc=25°C t=60sec,f=60Hz Note *1 : Limited by maximum channel temperature. Note *2 : Tch ≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch =25°C, IAS=2A, L=216mH, VDD =60V, RG =50Ω, See Fig.1 and Fig.2 E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤-I D, -di/dt=100A/μs, VDD ≤400V, Tch ≤150°C. Note *5 : I F ≤-I D, dV/dt=15kV/μs, VDD ≤400V, Tch ≤150°C. 1 8440 OCTOBER 2015 FMV20N60S1 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Electrical Characteristics at TC =25°C (unless otherwise specified) Static Ratings Description Symbol Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance RDS(on) Gate resistance RG Forward Transconductance gfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective output capacitance, energy related (Note *6) Ciss Coss Crss Effective output capacitance, time related (Note *7) Conditions ID =250μA VGS=0V ID =250μA VDS=VGS max. Unit - - V 2.5 3 3.5 V Tch =25°C - - 25 VDS=480V VGS=0V Tch =125°C - - 250 - 10 100 nA - 0.161 0.19 Ω - 3.7 - Ω S μA VGS= ± 30V VDS=0V ID =10A VGS=10V f=1MHz, open drain ID =10A VDS=25V 8.5 17.5 - VDS=10V VGS=0V f=1MHz - 1470 3120 280 - Co(er) VGS=0V VDS=0…480V - 90 - Co(tr) VGS=0V VDS=0…480V ID=constant - 305 - - 22 40 162 22 48 12.5 15 8 - 6.6 - - A - 0.9 1.35 V 370 - ns - 6.2 - μC - 32 - A min. typ. max. 2.36 58 Unit °C/W °C/W Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source crossover Charge Avalanche Capability IAV L=6.02mH,Tch =25°C See Fig.1 and Fig.2 Diode Forward On-Voltage VSD IF=20A,VGS=0V Tch =25°C Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irp Turn-Off Time typ. 600 VDS=600V VGS=0V td(on) tr td(off) tf QG QGS QGD QSW Turn-On Time min. VDD =400V, VGS=10V ID =10A, RG =27Ω See Fig.3 and Fig.4 VDD =480V, ID =20A VGS=10V See Fig.5 IF=20A, VGS=0V VDD =400V -di/dt=100A/μsTch =25°C See Fig.6 pF ns nC Note *6 : C o(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% BVDSS . Note *7 : C o(tr) is a fixed capacitance that gives the same charging times as C oss while VDS is rising from 0 to 80% BVDSS . Thermal Characteristics Description Channel to Case Channel to Ambient Symbol Rth(ch-c) Rth(ch-a) 2 FMV20N60S1 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Allowable Power Dissipation PD= f(TC) 60 Safe Operating Area ID= f(VDS):Duty= 0(Single pulse), TC=25°C 2 10 t= 1µs 1 10µs 10 40 PD [W] 100µs 0 ID [A] 10 20 1ms Power loss waveform : Square waveform -1 10 PD t 0 -2 0 25 50 75 100 125 10 150 -1 0 10 1 10 Typical Output Characteristics ID= f(VDS): 80µs pulse test, Tch=25°C 10V 50 45 40 20V 35 8V 6.5V 30 8V 10V 20V 6V 25 35 5.5V 6V ID [A] ID [A] 10 40 55 30 25 20 5V 15 5.5V 20 15 10 4.5V 5V 10 5 5 VGS=4V VGS=4.5V 0 0 0 5 10 15 VDS [V] 20 25 0 Typical Drain-Source on-state Resistance RDS(on)= f(ID): 80s pulse test, Tch=25°C 4.5V 5V 6V 5.5V 6.5V 5 10 VDS [V] 15 20 25 Typical Drain-Source on-state Resistance RDS(on)= f(ID): 80s pulse test, Tch=150°C 8V 10V 4V 1.4 0.5 4.5V 5V 1.2 5.5V 1.0 0.4 VGS=20V RDS(on) [ Ω ] RDS(on) [ Ω ] 3 10 Typical Output Characteristics ID= f(VDS): 80µs pulse test, Tch=150°C 60 0.6 2 10 VDS [V] TC[°C] 0.3 6V 0.8 8V 10V VGS=20V 0.6 0.2 0.4 0.1 0.2 0.0 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 0 ID [A] 5 10 15 20 ID [A] 3 25 30 35 40 FMV20N60S1 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Drain-Source Breakdown Voltage BVDSS=f(Tch): ID=10mA, VGS=0V 700 Drain-Source On-state Resistance RDS(on)= f(Tch): ID=10A, VGS=10V 0.6 This curve is not a guaranteed performance and is a reference value. 680 0.5 660 640 0.4 RDS(on) [ Ω ] BVDSS [V] 620 600 580 0.3 max. 0.2 560 typ. 540 0.1 520 0.0 500 -50 -25 0 25 50 Tch [°C] 75 100 125 -50 150 Gate Threshold Voltage vs. Tch VGS(th)= f(Tch): VDS=VGS, ID=250µA 6 0 25 50 Tch [°C] 75 100 125 150 9 10 Typical Transfer Characteristic ID= f(VGS): 80µs pulse test, VDS=25V 100 5 -25 10 1 150℃ ID[A] VGS(th) [V] 4 3 typ. Tch=25℃ 0.1 2 0.01 1 0 1E-3 -50 -25 0 25 50 75 Tch [°C] 100 125 150 0 Typical Transconductance gfs= f(ID): 80µs pulse test, VDS=25V 1 2 3 4 5 VGS[V] 6 7 8 Typical Forward Characteristics of Reverse Diode IF= f(VSD): 80µs pulse test 100 100 Tch=25℃ 10 IF [A] 10 gfs [S] 150℃ 1 150℃ Tch=25℃ 1 0.1 0.1 0.1 1 10 0.0 100 0.5 1.0 VSD [V] ID [A] 4 1.5 2.0 FMV20N60S1 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Typical Capacitance C= f(VDS): VGS=0V, f=1MHz 5 Typical Coss stored energy 14 10 12 4 10 8 Eoss [uJ] C [pF] 10 Ciss 3 10 2 10 Coss 6 1 10 4 Crss 0 10 2 -1 0 10 -2 -1 10 0 10 1 10 10 0 2 10 100 200 3 10 300 400 500 600 VDS [V] VDS [V] Typical Switching Characteristics vs. ID Tch=25°C t= f(ID): Vdd=400V, VGS=10V/0V, RG=27Ω, L=500uH Typical Gate Charge Characteristics VGS= f(Qg): ID=20A, Tch=25°C 10 Vdd=480V 300V 8 120V 6 td(off) 2 10 VGS [V] t [ns] tr tf 2 td(on) 1 10 0 1 10 0 2 10 ID [A] 10 0 10 20 30 40 50 60 Qg [nC] Maximum Avalanche Energy vs. startingTch E(AV)= f(starting Tch): VCC=60V, I(AV)<=6.6A 500 4 Transient Thermal Impedance Zth(ch-c)= f(t): D=0 101 IAS=2A 450 100 400 Zth(ch-c) [°C/W] 350 EAV [mJ] 300 IAS=4A 250 10-1 10-2 200 IAS=6.6A 150 10-3 10-6 100 10-5 10-4 10-3 t [sec] 50 0 0 25 50 75 starting Tch [°C] 100 125 150 5 10-2 10-1 100 FMV20N60S1 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ +10V L VGS -15V BVDSS Rg IAV VDD D.U.T. VDS 0 Fig.1 Avalanche Test circuit ID Fig.2 Operating waveforms of Avalanche Test VDS VGS VDS ×90% L Diode VDS ×90% VGS ×90% VDD RG D.U.T. VDS ×10% VDS ×10% VGS ×10% PG td(on) Fig.3 Switching Test circuit tr td(off) Fig.4 Operating waveform of Switching Test VGS,VDS VDS peak IF VDS QSW QGS VDS trr VGS QG tf 10V Irp×10% QGD Irp Qg Fig.5 Operating waveform of Gate charge Test trr Qrr=∫ ir・dt 0 Fig.6 Operating waveform of Reverse recovery Test 6 FMV20N60S1 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Outview: TO-220F(SLS) Package Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Marking Date code & Lot No. Y: Last digit of year M: Month code 1~9 and O,N,D NNN: Lot. serial number Under bar of date code : means lead-free mark Trademark Country of origin mark. YMNNN 20N60S1 " " (Blank): Japan P : Philippines Type name * The font (font type,size) and the trademark-size might be actually different. 7 FMV20N60S1 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2015. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 8