Download TSUS6402 Datasheet

TSUS6402
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 950 nm
• High reliability
• Angle of half intensity:  = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
94 8390
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
APPLICATIONS
TSUS6402 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
30
± 22
950
800
TSUS6402
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSUS6402
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5
V
Forward current
IF
150
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
300
Surge forward current
tp = 100 μs
IFSM
2.5
A
PV
170
mW
°C
Power dissipation
Junction temperature
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
t  5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.0, 28-May-15
Document Number: 84318
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS6402
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 230 K/W
80
60
40
20
100
80
60
RthJA = 230 K/W
40
20
0
0
10
21313
20 30
40
50
60
70 80
90
0
100
0
Tamb - Ambient Temperature (°C)
21314
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of e
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
MIN.
1.3
1.7
IF = 100 mA
TKVF
- 1.3
UNIT
V
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
15
30
IF = 1.5 A, tp = 100 μs
Ie
120
190
mW/sr
IF = 100 mA, tp = 20 ms
e
15
mW
IF = 20 mA
TKe
- 0.8
%/K

± 22
deg
p
950
nm
Angle of half intensity
100
30
μA
pF
50
mW/sr
Peak wavelength
IF = 100 mA
Spectral bandwidth
IF = 100 mA

50
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.2
nm/K
IF = 100 mA
tr
800
ns
IF = 1.5 A
tr
400
ns
IF = 100 mA
tf
800
ns
Rise time
Fall time
IF = 1.5 A
Virtual source diameter
Forward voltage
Rev. 1.0, 28-May-15
IF = 1.5 A, tp = 100 μs
tf
400
ns
d
2.9
mm
VF
2.2
2.7
V
Document Number: 84318
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS6402
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Ie - Radiant Intensity (mW/sr)
I F - Forward Current (A)
10 1
I FSM = 2.5 A ( Single Pulse )
tp/T = 0.01
10 0
0.05
0.1
0.5
1.0
10 -1
-2
10
94 7989
10 2
1
10 000
1000
φ - Radiant Power (mW)
e
I F - Forward Current (mA)
10
100
1000
I F - Forward Current (mA)
Fig. 6 - Radiant Intensity vs. Forward Current
10 4
10 3
10 2
10 1
10 0
0
1
2
3
100
10
1
0.1
4
10
100
1000
I F - Forward Current (mA)
1
V F - Forward Voltage (V)
94 7996
Fig. 4 - Forward Current vs. Forward Voltage
10 000
Fig. 7 - Radiant Power vs. Forward Current
1.6
1.2
1.1
1.2
IF = 10 mA
Ie rel; Φe rel
VF rel - Relative Forward Voltage (V)
10
1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
10 -1
100
1.0
0.9
IF = 20 mA
0.8
0.4
0.8
0.7
0
94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.0, 28-May-15
0
-10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 8 - Relative Radiant Intensity / Power vs. Ambient Temperature
Document Number: 84318
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS6402
www.vishay.com
Vishay Semiconductors
0°
I e rel - Relative Radiant Intensity
Φe rel - Relative Radiant Power
1.25
1.0
0.75
0.5
0.25
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
IF = 100 mA
0
900
80°
1000
950
0.6
λ - Wavelength (nm)
94 7994
0.4
0.2
0
0.2
0.4
0.6
94 7999
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
Ø 5.8 ± 0.15
C
R2.49 (sphere)
(4.1)
34.9 ± 0.55
< 0.7
8.7 ± 0.3
7.7 ± 0.15
A
Area not plane
Ø 5 ± 0.15
1 min.
+ 0.2
0.6 - 0.1
+ 0.15
0.5 - 0.05
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5259.08-4
Issue: 3; 19.05.09
Rev. 1.0, 28-May-15
Document Number: 84318
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
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Revision: 13-Jun-16
1
Document Number: 91000
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