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1 A DEVICE, A METHOD AND A SYSTEM FOR DETECTING PROPERTIES OF A MATERIAL TECHNICAL FIELD 5 Embodiments of the present invention relate to technologies for detection of material properties and more particularly to a device, method and system for detecting properties of a material. Further, the disclosed device and system characterize the material in determining material properties and quality. 10 BACKGROUND ART Sensing or detecting material properties undergoing physical or chemical changes is essential for numerous applications such as food industry, quality control, bio-sensing, agriculture, medicine and pharmacy, and material science. Material composition, moisture or water content in material under test 15 (MUT) carry valuable information and electrical properties of these materials depends on their properties. Thus, quality control in the material science, food industry, bio-sensing can be conducted based on sensing electrical properties of the materials. 20 Microwave measurement is a potential technique for detecting and characterizing materials due to its non-invasive characteristics and penetration sensing capability. Numerous microwave methods have been proposed and used for material characterization. These methods can be classified as free-space transmission methods, near-field sensors methods, resonant cavity 25 methods and planar resonator methods. 2 In conventional free-space methods, the material under test (MUT) is placed between a pair of spot-focusing lens antennas which required a large space to process measurement for reflection and transmission coefficients. In the near-field sensors methods, properties of the material can be extracted by 5 measuring the reflection coefficient from an open end when the sample or material under test is placed right at an opening. This method is called open-ended coaxial probe and this exhibits high precision for material characterization. This method can be used for extracting the properties of local materials since it is not limited by diffraction limitation. 10 In the resonant cavity methods, a cavity resonator is filled with an adjusted material under test (MUT) and a shift in resonant frequency and change in quality factor are measured. This method is considered as a most precise characterization method because this is applicable over a narrow band. 15 Further, in the planar resonator methods, the material under test (MUT) is placed either on top of a resonator or inside a substrate which depends on maximum electric field location (E-Field). There have been a number of solutions provided for efficient methods 20 for detection and characterization of materials and few of them have been discussed below: US20020175693A1 discloses a system and a method for detecting properties of a material. A detection apparatus comprises a pair of reflecting 25 surfaces which directs electromagnetic radiations into the detection apparatus. This electromagnetic radiation is detected to determine characteristics of a 3 sample under test. WO2013072844A1 describes systems, tools and methods for measuring a property of a solid body or a fluid. An electromagnetic 5 measurement tool of the invention includes a transmitter, a receiver and a metamaterial element comprising a negative refractive index. The electromagnetic measurement tool is placed adjacent to the solid body or the fluid and electromagnetic energy is transmitted through the transmitter and received by the receiver to measure the properties of solid body or the fluid. 10 US20140250553A1 describes a sensor. The sensor comprises a resonator, a probe and an encasement. The probe is attached to the resonator and the encasement encases the resonator. The encasement includes and opening through which the probe can protrude. Further, the sensor measures 15 for example acceleration, changes in mass, viscosity of its environment. The aforesaid documents and other similar solutions may strive to provide efficient methods for detecting and characterizing materials; however, they still have a number of limitations and shortcomings such as, but not limited 20 to, requirement of highly sophisticated and bulky equipment with high maintenance cost including antennas, lenses etc. Further, in the conventional methods, modelling of measured reflection coefficient as a function of dielectric properties remains a difficult task. Also, the resonant cavity method requires a precise 25 sample preparation and its effectiveness is limited when non-destructive measurements and preservation of original sample are required. In addition, the planar resonator method suffers from low sensitivity and poor 4 Quality factor (Q-factor) which restricts its use and limits range of materials and its applications. Accordingly, there remains a need in the prior art to have an improved 5 system and method for detecting properties of a material which overcomes the aforesaid problems and shortcomings. However, there remains a need in the art for a device, a method and a system which detects or measures properties of the materials. Further, the 10 proposed device is useful in characterizing the materials particularly in determining material properties and quality. Also, the device, method and system are efficient and economical. SUMMARY OF THE INVENTION 15 Embodiments of the present invention aim to provide a device, method and system for detecting properties of a material. The device has potential for high accuracy in extracting local material properties and exhibits high Q-factor as well as suppresses undesired spurious of a microwave resonator, thus, the device is used as a microwave sensor due to high sensitivity. Further, the 20 device is used in detecting properties of a wide variety of materials such as food industry, quality control, medicine & pharmaceutical, biological materials, composition and moisture of materials such as permittivity. Also, the disclosed device, method and system are efficient and economical. 25 In accordance with an embodiment of the present invention, the device for detecting properties of a material comprising a substrate, a pair of feed-lines 5 and a pair of concentric annular rings. The pair of concentric annular rings includes an inner ring with a centered-connecting joint and an outer ring wrapped around the inner ring. The inner ring is configured to have a first plurality of splits at opposite points on the inner ring and is placed on a top 5 portion of the substrate. The outer ring is configured to have a second plurality of splits formed at different symmetric points on the outer ring from the opposite points on the inner ring. Further, the outer ring is placed on the top portion of the substrate. The inner ring and the outer ring are having a coupling gap between them. The pair of feed-lines and the pair of concentric annular rings are having 10 another coupling gap between them. Also, the device is excited to generate an electric field and a magnetic field. In accordance with an embodiment of the present invention, the device further comprises a single spurline configuration on the pair of feed-lines. 15 Further, the single spurline configuration is embedded by an L-shape slot into the pair of feed-lines. In accordance with an embodiment of the present invention, the device further comprises a double spurline configuration on the pair of feed-lines. 20 Further, the double spurline configuration is embedded by an L-shape slot into the pair of feed-lines. In accordance with an embodiment of the present invention, the inner ring is configured to have the first plurality of splits at angles of, but not limited to, 25 900 and -900. 6 In accordance with an embodiment of the present invention, the outer ring is configured to have the second plurality of splits at angles of, but not limited to, 00 and 1800. 5 In accordance with an embodiment of the present invention, the inner ring and the outer ring are made up of, but not limited to, an electrically conductive and non-magnetic material. Further, the electrically conductive and non-magnetic material is, but not limited to, copper. 10 In accordance with an embodiment of the present invention, the inner ring and the outer ring are formed in, but not limited to, a circular, square and triangular shape. In accordance with an embodiment of the present invention, the 15 substrate is made up of materials selected from, but not limited to, a group consisting of Rogers, FR4, gold, plastic, graphite, porcelain and glass. In accordance with an embodiment of the present invention, the substrate is, but not limited to, a circuit board. 20 In accordance with an embodiment of the present invention, the substrate is formed from, but not limited to, a dielectric material. The substrate is cladded with an electrically conductive material on the top portion and ground at a bottom end. Further, the electrically conductive material is, but not limited to, 25 copper and the substrate material is, but not limited to, Rogers material. 7 In accordance with an embodiment of the present invention, the inner ring has a radius of, but not limited to, 10.85 mm. In accordance with an embodiment of the present invention, the outer 5 ring has a radius of, but not limited to, 15.85 mm. In accordance with an embodiment of the present invention, the first plurality of splits and the second plurality of splits have gaps in the range of, but not limited to, 0.25 mm to 0.37 mm. 10 In accordance with an embodiment of the present invention, the pair of feed-lines is having a length of, but not limited to, 34 mm and a width of, but not limited to, 2.5 mm. 15 In accordance with an embodiment of the present invention, the excitation of the device is performed using, but not limited to, microstrip feed-lines and coaxial probes. In accordance with an embodiment of the present invention, the method 20 for manufacturing the device for detecting properties of a material comprising the steps of forming an inner ring configured to have a first plurality of splits at opposite points on the inner ring, forming an outer ring wrapped around the inner ring and configured to have a second plurality of splits formed at different symmetric points on the outer ring from the opposite points on the inner ring, 25 providing a gap between the inner ring and the outer ring, placing the inner ring and the outer ring on the top portion of a substrate, providing a pair of feed-lines 8 and allowing a coupling gap between the pair of feed-lines and the inner ring and the outer ring. In accordance with an embodiment of the present invention, the method 5 further comprises a step of embedding a single spurline configuration on the pair of feed-lines. Further, the single spurline configuration is embedded by an L-shape slot into the pair of feed-lines. In accordance with an embodiment of the present invention, the method 10 further comprises a step of embedding a double spurline configuration on the pair of feed-lines. Further, the double spurline configuration is embedded by an L-shape slot into the pair of feed-lines. In accordance with an embodiment of the present invention, the first 15 plurality of splits and the second plurality of splits are formed by, but not limited to, etching. In accordance with an embodiment of the present invention, the system for detecting properties of a material comprising a material under test, a device, 20 and a vector network analyzer having a power source. The device comprises a substrate, a pair of feed-lines and a pair of concentric annular rings including an inner ring with a centered-connecting joint and an outer ring wrapped around the inner ring. The inner ring is configured to have a first plurality of splits at opposite points on the inner ring. The outer ring is configured to have a second 25 plurality of splits formed at different symmetric points on the outer ring from the opposite points on the inner ring. The inner ring and the outer ring are placed on 9 the top portion of the substrate. Further, the inner ring and the outer ring are having a coupling gap between them. Also, the pair of feed-lines and the pair of concentric annular rings are having another coupling gap between them. The device is connected to the vector network analyzer. The device is excited to 5 generate an electric field and a magnetic field and the material under test is configured to be placed on the device for detection of properties. In accordance with an embodiment of the present invention, the pair of feed-lines is configured to have a plurality of ports at end of each feed-line. 10 Further, the plurality of ports is connected to the vector network analyzer using a coaxial cable. In accordance with an embodiment of the present invention, the system further comprises a computing device. 15 In accordance with an embodiment of the present invention, the device detects reflection coefficient and transmission coefficient of the material under test. Further, the reflection coefficient and transmission coefficient are analyzed by the computing device. Also, the material under test is having a thickness in 20 the range of, but not limited to, 0.787 mm to 7.78 mm. In accordance with an embodiment of the present invention, the device is operated at a frequency of, but not limited to, 2.2 GHz. 25 BRIEF DESCRIPTION OF THE ACCOMPANYING DRAWINGS So that the manner in which the above recited features of the present 10 invention can be understood in detail, a more particular description of the invention, briefly summarized above, may have been referred by embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawing illustrates only typical embodiments of this 5 invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments. These and other features, benefits and advantages of the present invention will become apparent by reference to the following text figure, with like 10 reference numbers referring to like structures across the views, wherein: Fig. 1 illustrates a device for detecting properties of a material in accordance with an embodiment of the present invention. 15 Fig. 2 illustrates a single spurline configuration embedded in a pair of feed-lines of the device in accordance with an embodiment of the present invention. Fig. 3 illustrates a double spurline configuration embedded in the pair of 20 feed-lines of the device in accordance with an embodiment of the present invention. Fig. 4 illustrates a pictorial presentation of the device in accordance with an embodiment of the present invention. 25 11 Fig. 5 is a flow chart illustrating a method for manufacturing the device for detecting properties of the material in accordance with an embodiment of the present invention. 5 Fig. 6 illustrates a system for detecting properties of the material in accordance with an embodiment of the present invention. Fig. 7 illustrates a side view of the device with material under test in accordance with an embodiment of the present invention. 10 Fig. 8 is a graph showing difference between simulated and measured transmission coefficients in accordance with an embodiment of the present invention. 15 Fig. 9 is a graph showing variability of resonance frequency and relative shift of a symmetrical split ring resonator (SSRR) in accordance with an embodiment of the present invention. Fig. 10 is a graph showing variability of transmission coefficients (S21 20 in dB) and quality factor of the symmetrical slit ring resonator (SSRR) in accordance with an embodiment of the present invention. Fig. 11 is a graph showing variability of thickness of tested samples and the resonant frequency of the symmetrical split ring resonator (SSRR) in 25 accordance with an embodiment of the present invention. 12 Fig. 12 is a graph showing standard material under test (MUT) with known permittivity to validate the device sensitivity in accordance with an embodiment of the present invention. 5 Fig. 13 is a graph showing differences between reference materials with standard permittivity with measured result using the symmetrical split ring resonator (SSRR) in accordance with an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS 10 While the present invention is described herein by way of example using embodiments and illustrative drawings, those skilled in the art will recognize that the invention is not limited to the embodiments of drawing or drawings described, and are not intended to represent the scale of the various components. Further, some components that may form a part of the invention 15 may not be illustrated in certain figures, for ease of illustration, and such omissions do not limit the embodiments outlined in any way. It should be understood that the drawings and detailed description thereto are not intended to limit the invention to the particular form disclosed, but on the contrary, the invention is to cover all modifications, equivalents and alternatives falling within 20 the scope of the present invention as defined by the appended claim. As used throughout this description, the word "may" is used in a permissive sense (i.e. meaning having the potential to), rather than the mandatory sense (i.e. meaning must). Further, the words "a" or "an" mean "at least one” and the word “plurality” means “one or more” unless otherwise mentioned. Furthermore, the 25 terminology and phraseology used herein is solely used for descriptive purposes and should not be construed as limiting in scope. Language such as 13 "including," "comprising," "having," "containing," or "involving," and variations thereof, is intended to be broad and encompass the subject matter listed thereafter, equivalents, and additional subject matter not recited, and is not intended to exclude other additives, components, integers or steps. Likewise, 5 the term "comprising" is considered synonymous with the terms "including" or "containing" for applicable legal purposes. Any discussion of documents, acts, materials, devices, articles and the like is included in the specification solely for the purpose of providing a context for the present invention. It is not suggested or represented that any or all of these matters form part of the prior art base or 10 were common general knowledge in the field relevant to the present invention. In this disclosure, whenever a composition or an element or a group of elements is preceded with the transitional phrase “comprising”, it is understood that we also contemplate the same composition, element or group of elements 15 with transitional phrases “consisting of”, “consisting”, “selected from the group of consisting of, “including”, or “is” preceding the recitation of the composition, element or group of elements and vice versa. The present invention is described hereinafter by various embodiments 20 with reference to the accompanying drawing, wherein reference numerals used in the accompanying drawing correspond to the like elements throughout the description. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiment set forth herein. Rather, the embodiment is provided so that this disclosure will be thorough and 25 complete and will fully convey the scope of the invention to those skilled in the art. In the following detailed description, numeric values and ranges are 14 provided for various aspects of the implementations described. These values and ranges are to be treated as examples only, and are not intended to limit the scope of the claims. In addition, a number of materials are identified as suitable for various facets of the implementations. These materials are to be treated as 5 exemplary, and are not intended to limit the scope of the invention. Referring to the drawings, the invention will now be described in more detail. In accordance with an embodiment of the present invention, a device (100) for detecting properties of a material, as shown in figure 1, comprises a 10 substrate (102), a pair of feed-lines (104) and a pair of concentric annular rings. The pair of concentric annular rings includes an inner ring (106) and an outer ring (108) wrapped around the inner ring (106). Further, the device (100) is a symmetrical split-ring resonator (SSRR). 15 In accordance with an embodiment of the present invention, the inner ring (106) is configured to have a first plurality of splits (110) at opposite points on the inner ring (106). The inner ring (106) is placed on a top portion of the substrate (102). Further, the inner ring (106) is having a centered-connecting joint. The inner ring (106) is configured to have the first plurality of splits (110) at 20 angles of, but not limited to, 900 and -900. Also, the inner ring (106) has a radius of, but not limited to, 10.85 mm. In accordance with an embodiment of the present invention, the outer ring (108) is configured to have a second plurality of splits (112) formed at 25 different symmetric points on the outer ring (108) from the opposite points on the inner ring (106). The outer ring (108) is placed on the top portion of the 15 substrate (102). Further, the outer ring (108) is configured to have the second plurality of splits (112) at angles of, but not limited to, 00 and 1800. Also, the outer ring (108) has a radius of, but not limited to, 15.85 mm. 5 In accordance with an embodiment of the present invention, the inner ring (106) and the outer ring (108) are having a coupling gap between them. Further, a coupling gap (114) is also provided between the pair of feed-lines (104) and the inner ring (106) and the outer ring (108). The first plurality of splits (110) of the inner ring (106) and the second plurality of splits (112) of the outer 10 ring (108) have gaps in the range of, but not limited to, 0.25 mm to 0.37 mm. Also, the pair of feed-lines (104) is having a length of, but not limited to, 34 mm and a width of, but not limited to, 2.5 mm. In accordance with an embodiment of the present invention, the inner 15 ring (106) and the outer ring (108) are made up of, but not limited to, an electrically conductive and non-magnetic material. The electrically conductive and non-magnetic material is, but not limited to, copper. Further, the inner ring (106) and the outer ring (108) are formed in, but not limited to, a circular, square and triangular shape. 20 In accordance with an embodiment of the present invention, the substrate (102) is made up of materials selected from, but not limited to, a group consisting of Rogers, FR4, gold, plastic, graphite, porcelain and glass. Further, the substrate (102) is, but not limited to, a circuit board. The substrate 25 (102) is formed from a dielectric material. Also, the substrate (102) is cladded with an electrically conductive material (122) on the top portion and ground 16 (124) at a bottom end. The electrically conductive material (122) is, but not limited to, copper and the substrate (102) material is, but not limited to, Rogers material. 5 In accordance with an embodiment of the present invention, the substrate (102) supports a periodic, or a number of symmetrical split-ring resonators (SSRR) formed in parallel with each other and connected by the pair of feed-lines (104). 10 In accordance with an embodiment of the present invention, the device (100) is excited to generate an electric field and a magnetic field. Further, the device (100) is excited using, but not limited to, microstrip feed-lines, coaxial probes or any other relevant excitations. 15 In accordance with an embodiment of the present invention, the device (100) further comprises with a single spurline configuration on the pair of feed-lines (104) and a double spurline configuration on the pair of feed-lines (104). 20 Figure 2 illustrates the single spurline configuration embedded in the pair of feed-lines (104) of the device (100) in accordance with an embodiment of the present invention. As shown in figure 2, the single spurline configuration is embedded by 25 an L-shape slot with a length and a width into the pair of feed-lines (104) of the device (100). The width of the L- shape slot exhibits an effect of capacitance 17 while the microstrip line or the length of the L- shape slot provides an effect of inductance. The length and the width of the L- shape slot are formed without any stubs or etching process on microstrip feedlines. Further, the device (100) with the single spurline configuration is a small structure. 5 Figure 3 illustrates the double spurline configuration embedded in the pair of feed-lines (104) of the device (100) in accordance with an embodiment of the present invention. 10 As shown in figure 3, the double spurline configuration is embedded by the L-shape slot with a length and a width into the pair of feed-lines (104) of the device (100). The length and the width of the L-shape slot are formed without any stubs or etching process on microstrip feedlines. Further, the device (100) with the double spurline configuration is a small structure. Also, the double 15 spurline configuration is applied on the pair of feed-lines (104) without increasing overall circuit size of the substrate (102). Figure 4 illustrates a pictorial presentation of the device (100) in accordance with an embodiment of the present invention. 20 Figure 5 is a flow chart illustrating a method (200) for manufacturing the device (100) for detecting properties of the material in accordance with an embodiment of the present invention. 25 At step 202, the inner ring (106) is formed which is configured to have the first plurality of splits (110) at opposite points on the inner ring (106). Further, 18 the inner ring (106) is having the centered-connecting joint. In accordance with an embodiment of the present invention, the first plurality of splits (110) of the inner ring (106) are formed by, but not limited to, 5 etching. At step 204, the outer ring (108) is formed which is wrapped around the inner ring (106). Further, the outer ring (108) is configured to have the second plurality of splits (112) formed at different symmetric points on the outer ring 10 (108) from the opposite points on the inner ring (106). In accordance with an embodiment of the present invention, the second plurality of splits (112) of the outer ring (108) are formed by, but not limited to, etching. 15 At step 206, a gap between the inner ring (106) and the outer ring (108) is provided. At step 208, the inner ring (106) and the outer ring (108) are placed on 20 the top portion of the substrate (102). At step 210, the pair of feed-lines (104) is provided. In accordance with an embodiment of the present invention, the step 25 210 further comprises a step of embedding the single spurline configuration on the pair of feed-lines (104). Further, the single spurline configuration is 19 embedded by the L-shape slot into the pair of feed-lines (104). In accordance with an embodiment of the present invention, the step 210 further comprises a step of embedding the double spurline configuration on 5 the pair of feed-lines (104). Further, the double spurline configuration is embedded by the L-shape slot into the pair of feed-lines (104). At step 212, the coupling gap (114) is allowed between the pair of feed-lines (104) and the inner ring (106) and the outer ring (108). The coupling 10 gap (114) between the rings (106), (108) and the pair of feed-lines (104) produce large capacitance values which lower resonance frequency. Figure 6 illustrates a system (300) for detecting properties of the material in accordance with an embodiment of the present invention. 15 In accordance with an embodiment of the present invention, the system (300) as shown in figure 6, comprises a material under test (MUT) (302), a vector network analyzer (VNA) (306) and the device (100). Further, the vector network analyzer (VNA) (306) has a power source (304). 20 In accordance with an embodiment of the present invention, the resonance is produced when mean circumference of the ring resonator is equal to an integral of guided wavelength 2πr = nλg 25 Where n= 1, 2, 3, 4… and so on. Resonant frequency can be calculated for n modes by using (1) 20 𝜆𝑔 = 𝜆 (2) √ɛeff Where; 𝜆= 𝑐 𝑓 So, by considering equations (1) and (2), the resonant frequency is 5 found as: 𝑛𝑐 𝑓0 = 2𝜋𝑟 (3) √ɛeff Where; r: main radius of the ring element λg: the guided wave length n: the mode number, 1, 2, 3, ... 10 fo: the resonant frequency ɛeff: the effective of dielectric constant C: the speed of the light (3 x 10^8) For 50 Ω characteristic impedance Zo, w/d ratio can be found using this 15 formula: 8e𝐴 𝑤 = e2𝐴−2 𝑑 (4) Where: Z ɛr+1 ɛr−1 𝐴 = 600 √ 20 ɛeff = 2 +ɛr+1 (0.23 + ɛr+1 2 + ɛr−1 2 0.11 ɛr ) 1 𝑑 𝑤 (5) (6) √1+12( ) For the main radius, it can be calculated using this formula: 𝑟= 𝑛𝜆𝑔 2𝜋 (7) 21 For the spurline bandpass filter, the desired rejected wavelength can be calculated using the follow equation. 𝑎= 5 𝜆𝑔 (8) 4 Where a= length of the spurline, and λg = desired rejected wavelength in the substrate. Equation (8) can be derived into the frequency domain as follows: 𝑓𝑠𝑡𝑜𝑝 = 4𝑎 10 𝑐 √ɛeff (9) In accordance with an embodiment of the present invention, the material under test (MUT) (302) is configured to be placed on the device (100) for detection of properties as illustrated in figure 7 below. As shown in figure 7, the substrate (102) is cladded with an electrically 15 conductive material (122) on the top portion and ground (124) at a bottom end. The substrate (102) is also cladded with the electrically conductive material (122) at the bottom end. The electrically conductive material (122) is, but not limited to, copper and the substrate (102) material is, but not limited to, Rogers material. The material under test (MUT) (302) is placed on a top portion of the 20 device (100) in maximum electric field region. The electric field and magnetic field is demonstrated in figure 7 as (E) and (H), respectively. The magnetic field (H) penetrates the inner ring (106) and the outer ring (108) which induces current in both the rings (106), (108) to enhance incident field (E) and it depends on resonant properties of symmetrical split-ring resonator (SSRR). As 25 shown in figure 7, the inner ring (106) and the outer ring (108) included with the pair of feed-lines (104) are patched on the top portion of the substrate (102) 22 where the bottom end of the substrate (102) is electrically conductive, such as but not limited to, copper. Further, the material under test (302) is having a thickness in the range of, but not limited to, 0.787 mm to 7.78 mm. Also, the device (100) is excited to generate the electric field (E) and the magnetic field 5 (H). The device (100) is excited using, but not limited to, the microstrip feed-lines and coaxial probes. In accordance with an embodiment of the present invention, the device (100) is connected to the vector network analyzer (VNA) (306) having the 10 power source (304), as shown in figure 6. The vector network analyzer (VNA) (306) supplies the power source (304) and monitors the results. The pair of feed-lines (104) of the device (100) is configured to have a plurality of ports (116) at end of each feed-line with, but not limited to, SMA (SubMiniature version A) connectors. These plurality of ports (116) are connected to the vector 15 network analyzer (VNA) (306) using coaxial cables (118). In accordance with an embodiment of the present invention, the system (300) further comprises a computing device (120). The device (100) detects reflection coefficient and transmission coefficient of the material under test 20 (MUT) (302) and also detects the reflection coefficient and transmission coefficient when no overlay material under test (MUT) (302) is placed on the device (100). The device (100) is operated at, but not limited to, microwave frequencies such as, but not limited to, 2.2 GHz frequency. Further, recorded results are analyzed by using the computing device (120) for characterizing and 25 detecting the properties of the materials. 23 Figure 8 is a graph showing the difference between simulated and measured transmission coefficients (S21 in dB) in accordance with an embodiment of the present invention. As shown in figure 8, the results demonstrate some small deviations between the simulated and measured 5 transmission coefficients. Figure 9 is a graph showing variability of resonance frequency and relative shift of the symmetrical split ring resonator (SSRR) as a function of real permittivity (ɛr) of the material under test (302) (MUT) in accordance with an 10 embodiment of the present invention. As shown in figure 9, the change in the resonance frequency is dependent on interaction between the material under test (302) (MUT) and the electric field of the device (100) (sensor) which causes a reduction in the resonant frequency as well as reduction in Q-factor. The resonant frequency is decreased when the value of the material under test 15 (302) (MUT) permittivity is increased. Further, the relative shift is around 0.21 for permittivity with ɛr = 10 which is required to achieve high sensitivity with capability of detecting various materials at narrow band of frequencies. Figure 10 is a graph showing variability of the transmission coefficients 20 (S21 in dB) and the quality factor of the symmetrical slit ring resonator (SSRR) as a function of loss tangent (tanδ) in accordance with an embodiment of the present invention. Figure 10 demonstrates the quality factor corresponding to the change in loss tangent of the material under test (302) (MUT) (from 0 to 0.1) by considering the real permittivity to ɛr = 2. The transmission coefficient S21 25 (dB) was also plotted in the same figure. It was noted that the quality factor is dependent on the tangential loss of the material under test (302) (MUT) which 24 basically means that an increase in value of the tangent loss would lead to decrease in the quality factor. However, the transmission coefficients would be increased as well as the tangent loss was increased. 5 Figure 11 is a graph showing variability of thickness of tested samples and the resonant frequency of the symmetrical split ring resonator (SSRR) as a function of the real permittivity (ɛr) of the material under test (MUT) (302) in accordance with an embodiment of the present invention. Further, the figure 11 illustrates the real permittivity (ɛr) of the material under test (MUT) (302) 10 corresponding to the resonant frequency which is extracted from the simulated transmission coefficient data. It was observed that the slope of the plotted curve is dependent on the thickness of the material under test (MUT) (302). However, the slope of the curve remained constant when the sample thickness is greater than, and not limited to 5 mm. The shift in the resonance frequency is increased 15 when increasing the thickness of the overlay material under test (MUT). The reason behind this was that the overlay material under test (MUT) size increased, the field perturbation was also increased due to the more fringing fields which were getting concentrated into overlay material under test (MUT). As a result of increasing fringing field capacitance, the resonance frequency 20 was decreased. Even though there was a shift in the resonance frequency, which was significant within a certain thickness, but was limited to lower range only, its effect was not important. Therefore, further increase in sample thickness would not affect the resonance frequency. This is due to the fact that all of the electric field was confined into the overlay sample and substrate which 25 interprets the effective permittivity was increased with the height of the overlay until it reached asymptotic value. 25 Figure 12 is a graph showing standard material under test (MUT) with known permittivity to validate the device (100) sensitivity in accordance with an embodiment of the present invention. For experimental validation, measurements were made for standard materials under test (MUT) with known 5 permittivity (εr) to estimate their potential of dielectric detecting and sensing. These materials were Air, Roger Duriod RT 5880, Roger RO4350B, and FR4 and they were placed on the maximum electric field area of the device (sensor) (100). The electric field interacts with the dielectric materials under test (MUT) and energy was coupled into these materials which caused shifting in the 10 resonant frequency. For the conducted experiment, the resonance frequency was shifted to lower frequency as indicated in figure 12. It is clearly shown in figure 12 that the resonant frequency was changed for each material under test (MUT) with known dielectric constant. Thus, the materials with unknown permittivity can be extracted. For each tested material, the resonant frequency 15 was slightly shifted to lower frequency which depends on the permittivity of material under test (MUT). This makes the device (sensor) (100) detect and characterize materials with small variations of materials permittivity. Figure 13 is a graph showing differences between reference materials 20 with standard permittivity with the measured result using symmetrical split ring resonator (SSRR) in accordance with an embodiment of the present invention. As shown in figure 13, measurement of the resonant frequency was fitted corresponding to the permittivity of material under test (MUT) for obtaining the numerical model, as indicated in figure 13. It was demonstrated that the 25 measured permittivity of the standard materials using the SSRR sensor was in a very good agreement to the reference or standards permittivity of the same 26 materials. This indicates that the SSRR sensor has high sensitivity and accuracy which can detect and characterize a small variation of the materials properties. 5 The above-mentioned device, method and system for detecting properties of the material overcomes the problems and shortcomings of the existing methods for detecting and characterizing materials and provides a number of advantages over them. The device for detecting properties of the material is suitable for use in industrial applications due to many advantages 10 such as, but not limited to, high sensitivity, easy to fabricate, inexpensive to build, and compact size. The device and system are useful in applications such as, but not limited to, food industry, agriculture, food processing, dairy products, fruits and vegetables, geo-science, bio-engineering, quality control, bio-sensing, medicine and pharmacy and especially for applications that require 15 non-destructiveness. The device includes metamaterials that have electric or magnetic properties which are not found in natural materials. The metamaterials include symmetrical split ring resonator (SSRR), symmetrical split ring resonators with spurlines (SSRR), or variety of other electrically-small resonators made of conducting wires or conducting flat surfaces. The device 20 with single spurline configuration provides excellent band stop and band pass characteristics and moderate rejection bandwidth with its compact size. Further, the device with single spurline configuration suppresses harmonic resonant and undesired rejected wavelength. Also, the device with double spurline configuration suppresses the harmonic resonant and undesired rejected 25 wavelength with a wider rejection bandwidth with higher performance. In addition, the device uses the concept of reflected and transmitted coefficients 27 for detecting and characterizing the properties of, but not limited to, materials, moisture and composition materials. The exemplary implementation described above is illustrated with 5 specific shapes, dimensions, and other characteristics, but the scope of the invention includes various other shapes, dimensions, and characteristics. Also, the device, method and system for detecting properties of the material as described above could be fabricated in various other ways and could include various other materials, including various other metals, substrates etc. 10 Similarly, the exemplary implementations described above include specific examples of metals, substrates etc., but a wide variety of other such steps of fabrication could be used within the scope of the invention, including additional steps, omission of some steps, or performing process in a different 15 order. Various modifications to these embodiments are apparent to those skilled in the art from the description and the accompanying drawings. The principles associated with the various embodiments described herein may be 20 applied to other embodiments. Therefore, the description is not intended to be limited to the embodiments shown along with the accompanying drawings but is to be providing broadest scope of consistent with the principles and the novel and inventive features disclosed or suggested herein. Accordingly, the invention is anticipated to hold on to all other such alternatives, modifications, and 25 variations that fall within the scope of the present invention and appended claim.