Download Metal layer Oxide layer

Structure and Operation of the MOSFET
14 and 16 March 2016
FET Circa 1964-Commercial Introduction
First FET IC Circa 1964 By RCA
MOS Inversion Layer
Metal layer
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Oxide layer
n-type inversion layer
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P-type
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With large positive gate bias, there will be electrons at the interface
between the oxide and semiconductor, which leads to formation of
a thin n-type inversion layer
Threshold voltage VT: applied gate voltage required to achieve the
threshold inversion
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Voltage-Current Relationship of NMOS (1)
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