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Rad Hard Products for Satellites and Space Rad Hard Products Only Re-Configurable Rad Hard FPGA Manufactured on QML line, special epi Process Utilize same geometries as non-rad Hard QML devices to facilitate prototyping Guaranteed radiation specs Densities up to 130,000 system gates today Total Ionizing Dose Testing Performed at Lockheed, Sunnyvale CA. Co-60 source Per MIL-STD-883, Method 1019, except dose rate Dose rate 35 rads-si/sec @25oC Full specified Vdd, outputs tri-stated Booted up with default initial configuration Icc plotted vs dose during radiation stress Full production testing within 60 minutes 60 Krads(si) with no parametric shift or degradation SEU/SEL Heavy ion SEU/SEL tests performed at Brookhaven National Labs, Upton, NY. Lets up to 120MeV - cm2/mg No latch - up @ +125°C Low soft upset rates IC Process Advanced 0.35m epitaxial CMOS process - Thin, high quality gate oxide - Highly doped field oxide - Field implant in SRAM area - 7um epi substrate Class T Rad Hard Quality Requirements Defined in Mil - PRF - 38535 (QML) Intended for satellite and similar applications Does not replace class V space product Supported by DSCC and JEDEC (G-12 and JC-13) Product will be supplied to SMDs, with radiation (TID) guarantees Calculated Upset Rates for LEO Galactic H.I. (ups/bit-day) 9.54E-8 Galactic p+ (ups/bit-day) 2.43E-8 Trapped p+ (ups/bit-day) 2.50E-7 90% w/c p+ (ups/bit) 2.78E-6 ALSF p+ (ups/bit) 1.78E-4 90% w/c H.I. (ups/bit) 1.46E-6 ALSF H.I. (ups/bit) 1.44E-6 Notes 1. Low Earth Orbit (LEO), 680 km, 98 inclination, 100 mil Al shielding 2. Heavy ion testing was performed on Xilinx XQR devices at Brookhaven National Laboratories. This data was used to calculate upsets from the galactic cosmic and solar flare environments. 3. Space Radiation 2.5 and CHIME models were used for the galactic and solar flare conditions. 4. Space Radiation 2.5 was used for the trapped radiation and proton contribution from the flares. Calculated Upset Rates for GEO Galactic Galactic Trapped H.I. p+ p+ (ups/bit-day) (ups/bit-day) (ups/bit-day) 2.34E-7 5.62E-8 - 90% w/c p+ (ups/bit) 3.90E-6 ALSF p+ (ups/bit) 2.49E-4 90% w/c H.I. (ups/bit) 7.20E-6 ALSF H.I. (ups/bit) 6.98E-6 Notes 1. Geostationary Earth Orbit (GEO), 35,000 km, 0 inclination, 100 mil Al shielding 2. Heavy ion testing was performed on Xilinx XQR devices at Brookhaven National Laboratories. This data was used to calculate upsets from the galactic cosmic and solar flare environments. 3. Space Radiation 2.5 and CHIME models were used for the galactic and solar flare conditions. 4. Space Radiation 2.5 was used for the proton contribution from the flares. Single Event Upset Test Conclusion: 398 upset (calculated) during a 5-year LEO mission 1,2,3,4 Statistically, one bit upset per 110 hrs in the 800,000 configuration latches Notes: 1) 680 km, 98° inclination, 100 mil Al shielding with two 90% worst-case flares per year and one ALSF per mission 2) Heavy ion testing performed on Xilinx XQR devices at Brookhaven National Laboratories. This data was used to calculate upsets from the galactic cosmic and solar flare environments. 3) Space Radiation 2.5 and CHIME models used for the galactic and solar flare conditions. 4) Space Radiation 2.5 used for the trapped radiation and proton contribution from the flares. The XQR4000XL Family 3 Device Sizes - XQR4013XL (10K to 30K system gates) - XQR4036XL (20K to 65K system gates) - XQR4062XL (40K to 130K system gates) Packages - Ceramic QFP - CB228 - Plastic QFP, BGA, DIE Temperature Range -55oC to +125oC Speed Grade -3 over Military Temperature Range -1 over Commercial Temperature Range XQR4000XL Radiation Specifications Total Ionizing Dose 60Krads(si) QA monitor on every wafer lot Latch-up Immune LETth >100 MeV*cm2/mg @ +125oC Soft Upset Rate (upsets/bit-day) 2.43E-8 (Galactic p+)1 9.54E-8 (Galactic Heavy Ion) 1 Note1: For Low Earth Orbit (LEO), 680 km, 98 inclination, 100 mils Al shielding Virtex Rad Hard The Next Generation Advanced 0.25m process total dose >100K Rads Initial SEU evaluation in 1Q99 Product schedules: XQVR300 Q399 XQVR600 Q499 XQVR1000 Q100 Radiation Hardened Product/Process Roadmap 13K to 62K Gates Product Introduced 0.35m 0.25m XQR4000XL 62K gates 150K to +1M Gates Radiation testing to be conducted in 1Q99 1M gates Virtex XQV XQVR 0.18m 1998 1999 >1M gates Virtex II 2000 2002 Documentation XQR Products Data Sheet Single Event Effects Testing ( white paper) Neutron Single Events (white paper) Radiation Tolerance of High-Density FPGAs ( white paper) Radiation Hardened Products Presentation Available at: www.xilinx.com/products/hirel_qml.htm Rad - Hard Configuration Memories E2PROM - Northrop Grumman (formerly Westinghouse, Baltimore) - W28C64 -- 64K (8K x 8) - W28C256 -- 256K (32 x 8) SRAM Honeywell - HLX6228 -- 1M (128K x 8) Austin - MT5C1008XX - XXE (128K x 8) - AS5C512K8XX - XXE (512K x 8) SEI - www.spaceelectronics.com