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Bipolar resistive switching in PVDF and BaTiO3 thin films for non-volatile memory applications
K. Pramod, Muhammed Razi P, Rasi U P & R. B. Gangineni*
Department of Physics, School of Physical Chemical and Applied Sciences, Pondicherry University,
R. V. Nagar, Kalapet, Puducherry 605014, India
* [email protected]
ABSTRACT:
Resistive random access memory (RRAM) with simple two terminal Metal-Insulator-Metal (MIM) cells are considered
to be promising candidate to replace DRAM as well as Flash, and hence assume to have the potential to be a universal
memory. This paper explore the resistive switching applications utilizing an organic polymer Polyvinylidene fluoride
(PVDF) and an inorganic oxide thin films of BaTiO3. Functional organic polymers show tremendous potential in the
flexible electronic appliances. PVDF is one such potential material exists in polymorphic phases with non-polar & polar
natures. Rectified I-V curves and a clear bi-stable resistance switching phenomena has been noticed in the (Hg or
Ag/PVDF/(Au or Pt or Ni)) structures and as well as in interconnected nano-dots of PVDF. A resistance change of the
order of 101 with in a voltage range of +1V and -1V is noted. Clear bi-stable resistance switching phenomena has been
observed up to 1 MHz. The self-compliance resistive switching of amorphous BaTiO3 in Ag/BTO/Ag capacitor like
structures is also investigated. A practical resistance ratio of ~ 25 & low power of 70 µW & 59 µW is observed for both
set and reset formations. A typical resistive switching in both interconnected PVDF nano dots and amorphous BaTiO 3
thin films is shown in Fig.1. A special focus is made to address the usage of junctions for selector devices and for the
non-volatile resistive switching memory devices. Further, the possible mechanisms and the correlation between for the
rectified electronic transport and resistive switching mechanism will be discussed.
Fig.1: A typical resistive switching in (a) interconnected PVDF nano-dots & (b) amorphous BaTiO3 thin films