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TEACHING ARCHIVESTIEI
Course Description (for 2014)
Course Description
Tianjin International Engineering Institute
Course Name(Chinese): 固体电子学
(English): Solid State Electronics
Course Name: Solid State Electronics
Course Code:
Semester: 2
Credit:
Programme: Electronic
Course Module: Specialized Subjects
Responsible: Xiao Mi
E-mail: [email protected]
Department: School of Electronic Information Engineering
Time Layout (1 credit hour = 45 minutes)
Practice
Lecture
Lab-study
8
24
8
Project
Internship(days)
Personal Work
20
Course Resume
The course covers the following topics:

Crystal structure; Energy Band;

Defects;

Thermal Properties.
Pre-requirements
Semiconductor Physics
Course Objectives
This course examines classical and quantum models of electrons and lattice vibrations in
solids, emphasizing physical models for elastic properties, electronic transport, and heat capacity.
Topics covered include: crystal lattices, electronic energy band structures, phonon dispersion
relations, effective mass theorem, semiclassical equations of motion, and impurity states in
semiconductors, band structure and transport properties of selected semiconductors, and
connection of quantum theory of solids with quasifermi levels and Boltzmann transport used in
device modelling.
Course Syllabus
1. Crystal Binding and Structure
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TEACHING ARCHIVESTIEI
Course Description (for 2014)
1.1 Classification of Solids by Binding Forces
1.1.1 Molecular Crystals and the van der Waals Forces
1.1.2 Ionic Crystals and Born-Mayer Theory
1.1.3 Metals and Wigner-Seitz Theory
1.1.4 Valence Crystals and Heitler-London Theory
1.1.5 Comment on Hydrogen-Bonded Crystals
1.2 Group Theory and Crystallography
1.2.1 Definition and Simple Properties of Groups
1.2.2 Examples of Solid-State Symmetry Properties
1.2.3 List of Crystal Systems and Bravais Lattices
1.2.4 Schoenflies and International Notation for Point Groups
1.2.5 Some Typical Crystal Structures
1.2.6 Miller Indices
1.2.7 Bragg and von Laue Diffraction
2. Lattice Vibrations and Thermal Properties
2.1 The Born-Oppenheimer Approximation
2.2 One-Dimensional Lattices
2.2.1 Classical Two-Atom Lattice with Periodic Boundary Conditions
2.2.2 Classical, Large, Perfect Monatomic Lattice, and Introduction to Brillouin Zones
2.2.3 Specific Heat of Linear Lattice
2.2.4 Classical Diatomic Lattices: Optic and Acoustic Modes
2.2.5 Classical Lattice with Defects
2.2.6 Quantum-Mechanical Linear Lattice
2.3Three-Dimensional Lattices
2.3.1 Direct and Reciprocal Lattices and Pertinent Relations
2.3.2 Quantum-Mechanical Treatment and Classical Calculation of the Dispersion Relation
2.3.3 The Debye Theory of Specific Heat
2.3.4 Anharmonic Terms in the Potential
3.Electrons in Periodic Potentials
3.1 Reduction to One-Electron Problem
3.1.1 The Variational Principle
3.1.2 The Hartree Approximation
3.1.3 The Hartree-Fock Approximation
3.1.4 Coulomb Correlations and the Many-Electron Problme
3.1.5 Density Functional Approximation
3.2 One-Electron Models
3.2.1 The Kronig-Penney Model
3.2.2 The Free-Electron or Quasifree-Electron Approximation
3.2.3 The Problem of One Electron in a Three-Dimensional Periodic Potential
3.2.4 Effect of Lattice Defects on Electronic States in Crystals
4 .Defects in Solids
4.1 Summary About Important Defects
4.2 Shallow and Deep Impurity Levels in Semiconductors
4.3 Effective Mass Theory, Shallow Defects, and Superlattices
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TEACHING ARCHIVESTIEI
Course Description (for 2014)
4.4 ColorCenters
4.5 Diffusion
4.6 Edge and Screw Dislocation
4.7 Thermionic Emission
4.8 Cold-Field Emission
Text Book & References
Required: James D. Patterson and Bernard C. Baildy, Solid-State Physics: Introduction to the
Theory, Springer-Verlag Berlin Heidelberg 2007
We may also use readings from:
Neil W. Ashcroft and N. David Mermin, Solid State Physics, Washington, DC: Holt, Rinehart &
Wilson
Capability Tasks
CT1
CT2
CT3
CT4
CT10
Achievements
To be able to analyze physical models for elastic properties, electronic transport, and heat
capacity-Level: M
To be able to modelelectrons and lattice vibrations in solids - Level: M
Students: Electronic year 2
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