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Boostable Repeater Design using Dickson charge pump M.Yamini Saraswathi, Department of ECE Vasireddy Venkatadri Institute of Technology Email:[email protected] ABSTRACT: Process variations and circuit aging continue to be one of the main challenges to the power-efficiency of VLSI circuits. The boostable repeater design enables finegrained circuit adaptation and therefore, power-efficient resilience to variations. The main idea is a Boostable repeater design that can transiently and autonomously raise its internal voltage rail to boost switching speed. In this paper a new technique is implemented for increasing the boosting feature by introducing the multistage charge pump and Dickson charge pump. In this Boostable repeater we compare both multistage charge pump and dickson charge pump. The Boostable repeater design with dickson charge pump boosts voltage without delay and it was validated by P-SPICE simulationbased experiments. Sk.Riyazuddien, Assistant Professor Department of ECE Vasireddy Venkatadri Institute of Technology Email:[email protected] voltage regulators or an additional power grid. Since interconnect is a widely recognized cause of bottleneck in chip performance, and tremendous repeaters are employed on chip designs, boostable repeater has plenty of chances to improve system robustness. In the previous paper Boostable repeater [4] is used, which can boost its switching speed through transiently and autonomously [3] enhancing its internal voltage rail. An overview of our boostable repeater design is depicted in Fig. 1. It is composed of three parts: a conventional repeater, booster, and control circuit. The core part is the booster, which is a capacitive charge pump. When the repeater is in steady state, the pump is charged. When the repeater has a rising switching, the pump discharges and provides a transient voltage that is higher than VDD. The boosting features can be turned ON and OFF at runtime, and therefore, can adaptively compensate delay variations. KEY WORDS: Boostable Repeater, Dickson Charge pump, Multi stage charge pump, Conventional Repeater. I.INTRODUCTION Length of interconnect and number of repeaters are increasing with the advancement in VLSI Technology [1]. Requirement of repeaters is increasing as the length of interconnect is increasing. The power delay product and frequency of operation plays significant role in designing of repeater. Boostable repeater design toward supply voltage adaptation for variation resilience in VLSI interconnects. The boosting can be turned on/off to compensate variations. The boostable repeater design achieves finegrained voltage adaptation without stand-alone Fig. 1. Overview of boostable repeater. The control block turns the booster block on and off through the enable signal. When turned on, the booster block raises the rising transition speed of the repeater block output. Connections between devices are simplified through dotted lines. In the conventional boostable repeater the capacitor charge pump circuit is modified by either multi stage charge pump or dickson charge pump. This paper provides a novel technique i.e. Dickson charge pump, which increases the switching speed of the boostable repeater. Charge pump [5] circuits are mostly used in the applications where voltages higher than the nominal power supply voltages. High voltages are necessary for the programming of nonvolatile memories, for biasing the PMOS in order to reduce the leakage currents and for driving electrostatic actuators and the analogue switches in switched-capacitor systems. Charge pumps transfer charge packets [12] from the power supply to the output terminal using only capacitors and switches to generate the required voltage level, thereby allowing integrated implementations. The charge pump circuit reported by Dickson has been widely used, for generating high voltages. The specific circuit makes use of capacitors interconnected with diodes and coupled in parallel by two nonoverlapping clocks. The diodes of the Dickson circuit can be replaced by NMOS transistors as shown in Fig. 6, resulting in a more efficient implementation. II.CONVENTIONAL REPEATER WITH INTERCONNECT Fig. 2. Conventional repeater circuit with interconnect III.BOOSTABLE REPEATER DESIGN The Boostable repeater operates in 4 modes 1) Boosting On: If the boosting feature is always on and cannot be turned off, i.e., it is not programmable, the design is a simplified version shown in Fig. 3(a). The transistor P2 is the pass transistor that delivers current from C pump to the output node. Transistor P1, N1, and the inverter between the output and node 3 coordinate the operations. The operations mainly include two phases: charging and boosting. The below Figure 2 shows the conventional repeater with interconnect and output load capacitor. In the Conventional repeater, the substrate bias voltage is zero for both the NMOS and PMOS. The circuit shows the grounded body bias repeater with interconnect having capacitive load. In the STGB bias repeater substrate bias voltage for the NMOS is set to zero but for the PMOS it is not at zero value, thus the threshold voltage of the PMOS changes with applied voltage, while in case of the conventional repeater threshold voltage of PMOS and NMOS are not depending upon the change of the applied input voltage. Fig 3. Schematics of boostable repeater. (a) Simplified schematic. (b) Complete schematic. 2) Charging phase: Charging to the capacitor C pump takes place when both the input and the output are stabilized to high, or VDD. When the input and the output are high, P1 is OFF, N1 is ON, and V3 (voltage at node 3) is low. Since N1 is ON, V1 (voltage at node 1) is at VDD – Vtn, where Vtn is the threshold voltage of N1. Then, the pass transistor P2 is partially ON and VDD at the output charges node 2 through P2. In other words, C pump is charged. 3) Boosting Phase: The boosting occurs when there is a rising switching at the input. Due to the gate delays between the input and the output, there is a short time period when the output is still low even the input goes high. During this period, N1 is turned ON and pulls V1 towards low. The low voltage at node 1 turns ON pass transistor P2 and C pump starts to discharge and pull up the output voltage, i.e., the boosting starts. At the same time, the input rising is propagated to the output and the output is pulled up by VDD as well. Evidently, the boosting accelerates the rising transition of the output, and therefore, improves switching speed. The main area overhead is due to pass transistor P2 and capacitor C pump. The C pump can be implemented using trench capacitor [2], which is very area efficient. 4) Boosting Off: When the “Enable” signal is high, the circuit operates in the same way as that in Fig. 3(a). When “Enable” is low, the NAND2 gate outputs constant high. At the same time, transistor N2 is off and P3 is on. Therefore, pass transistor P2 is turned off. The booster part is disconnected from the output node. charge pump circuit. The MOS’T in multi stage charge pump function as diodes [10], so that the charges can be pushed only in one direction. However the nodes of the diode chain are coupled to the inputs via capacitors in parallel, instead of series so that the capacitors have to withstand the full voltage developed along the chain. Two pumping clocks are used [9]. The two pumping clocks Clk1 and Clk2 are out of phase and have a voltage amplitude V. The value of Vφ is equal to VDD. Fig. 4. Multi stage charge pump Through the coupling capacitors C1-C4, two clocks push the charge voltage upward through the transistors. Cs is the parasitic capacitance associated with each pumping node, f is the frequency of the pumping clocks and I0 is the output current loading. V.DICKSON CHARGE PUMP IV.MULTI STAGE CHARGE PUMP In Boostable Repeater design replacing the capacitor charge pump [6] with multi stage charge pump shown in the figure4, the performance is increases, boosting can be achieved with faster compared to the capacitor Fig. 5.Two complementary clock phases The first widely used monolithic charge pump is the Dickson charge pump [11]. This circuit, shown in Fig. 6, uses diode connected (N) MOS transistors and a chain of capacitors (C) driven by two complementary phases _1 and _2 to transfer charges from the power supply at a voltage VDD to the load capacitor CL at a higher voltage. The ratio between the output voltage and the input voltage is the conversion ratio. VI.EXPERIMENTAL DATA By using Boostable Repeater with capacitor charge pump design the boosting can be achieved at 1.0 ms instead of boostable Repeater with multistage charge pump the delay is less compared to Capacitor charge pump and boosting is achieved at 10.0ns. The Proposed dickson charge pump with Boostable Repeater has delay is very very less and is about 1.0ns,and it can be observed in the Figures 7,8,9,10.so the Performance is better in Dickson charge pump compared to the Capacitor charge pump and multistage charge pump. By using the conventional repeater there is no boosting at all. Fig. 6. The Dickson charge pump circuit with NMOS. The Dickson charge pump [7], [8] circuit shown in Figure 6 has been widely deployed for generating higher voltages. This circuit consists of capacitor stages connected by NMOS transistors and coupled in parallel by two non-overlapping clocks [9]. The diodeconnected NMOS transistors are used instead of p-n junction diodes for implementing the circuit in standard CMOS process. The diode connected NMOS allow the charge flow only in the direction of the output stage in ideal conditions. The charges are pushed from one stage to the next, resulting in higher DC voltage at the output. When Clk1 goes from low to high and Clk2 goes from high to low, the voltage at node 1 is settled to V1+∆V and the voltage at node 2 is settled to V2 , where V1 and V2 are defined as steady-state lower voltage at node 1 and node 2. Both MD1 and MD2 are reverse biased and the charges are being pushed from node 1 to node 2 through MD2. The final voltage difference between node 1 and node 2 is the threshold voltage MD2. The necessary condition for the charge pump to function is that ∆V must be larger than the MOST’s threshold voltage Vtn ,i.e ∆V>Vtn, The voltage pumping gain for the second pumping stage GV2 is defined as the voltage difference Between V1 and V2 . Fig.7. The output waveform of Conventional Repeater Circuit Fig.8.The output waveform of Boostable Repeater Design with capacitor charge pump 5 4 Dickson Chargepump 3 2 MultiStage Chargepump 1 0 Capacitor chargepump Fig. 9. The output waveform of Boostable repeater with multi stage charge pump Fig. 11.Comparision of different types of Boostable Repeater circuits Performance and Power. The curves are depicted in Fig. 12. One can see that solutions of our approach are superior to those from conventional Capacitor charge pump in terms of the entire performance. 14 12 Dickson chargepump 10 8 Multi stage chargepump 6 Fig.10.The output waveform of Dickson Boostable Repeater 4 2 Capacitor chargepump 0 performance VII.COMPARISON OF THE BOOSTABLE REPEATER CIRCUITS WITH RESPECT TO PERFORMANCE AND POWER The bars of Fig. 11 show more clear comparison in performances between three systems. The leftmost bar is for the performance in dickson charge pump system, the middle is for multistage charge pump, and the rightmost bar is for capacitor charge pump approach with boostable repeaters. Our proposed dickson charge pump system shows the best performance among all the systems. And compare to power, the capacitor charge pump and dickson charge pump power consumption is almost equall but the multistage charge pump consumes more power. Fig.12.Performance Characteristics of Multicharge and Capacitor Charge Pumps Dickson, VIII.CONCLUSION Two methods are proposed for increasing the boosting feature without delay they are multistage charge pump and Dickson charge pump. By replacing the capacitor charge pump in our boostable repeater design with these charge pumps the speed of the operation is achieved. Compared to multistage charge pump the performance is better in Dickson charge pump. Results show that the Dickson charge pump (voltage doubler) is the best structure for boosting. Therefore, these techniques to improve performance and conversion efficiency of boostable repeater are proposed. REFERENCES: [1] P. J. Osler, “Placement driven synthesis case studies on two sets of two chips: Hierarchical and flat,” in Proc. ACM Int. Symp. Phys. Design, 2004, pp. 190–197. [2] C. Pei, R. Booth, H. Ho, N. Kusaba, X. Li, M. Brodsky, P. Parries, H. Shang, R. Divakaruni, and S. Iyer, “A novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications,” in Proc. IEEE Int. Conf. SolidState Integr. Circuit Technol., Oct. 2008, pp. 1146– 1149. [3] S. Das, D. Roberts, S. Lee, S. Pant, D. Blaauw, T. Austin, K. Flautner, and T. Mudge, “A self-tuning DVS processor using delay-error detection and correction,” IEEE J. Solid-State Circuits, vol. 41, no. 4, pp. 792–804, Apr. 2006. [4] Kyu-Nam Shim, Jiang Hu, “Boostable Repeater Design for Variation Resilience in VLSI Interconnects” vol. 21, no. 9, september 2013 [5] Wu, J.T. and Chang, K.L. (April 1998) “MOS charge pumps for low voltage operation”, IEEE J. Solid State Circuits 33(4), 592–597. [6] Witters, J.S., Groeseneken, G. and Maes, H.E. (1993) “Analysis and design of a charge pump circuit for high output current applications”, European Solid State Circuits Conference ESSCIRC, pp. 118–121. [7] Shin, J., Chung, I.-Y., Park, Y.J. and Min, H.S. 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