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MD80HHC120E1S
MOSFET Module
STARPOWER
MOSFET
SEMICONDUCTOR
MD80HHC120E1S
1200V/80A 4 in one-package
General Description
STARPOWER MOSFET Power Module provides
very low RDS(on) as well as optimized intrinsic diode.
It’s designed for the applications such SMPS and
electric vehicle.
Features







SiC power MOSFET
Low RDS(on)
Optimized intrinsic reverse diode
Avalanche ruggedness
Low inductance case
AlN substrate for low thermal resistance
Isolated copper baseplate using DBC technology
Typical Applications



Electric vehicle
Solar Power
Switching mode power supply
Equivalent Circuit Schematic
©2015 STARPOWER Semiconductor Ltd.
3/19/2015
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Preliminary
MD80HHC120E1S
MOSFET Module
Absolute Maximum Ratings TC=25oC unless otherwise noted
MOSFET
Symbol
VDSS
VGSS
ID
IDM
PD
Description
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
Maximum Power Dissipation @ Tj=175oC
Value
1200
-6/+22
80
160
334
Unit
V
V
A
A
W
Value
80
160
Unit
A
A
Value
1200
80
160
Unit
V
A
A
Value
175
-40 to +150
-40 to +150
2500
Unit
o
C
o
C
o
C
V
Body Diode
Symbol
IS
ISM
Description
Source Current
Pulsed Source Current
Reverse Diode
Symbol
VRRM
IF
IFM
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current
Module
Symbol
Tjmax
Tjop
TSTG
VISO
Description
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
©2015 STARPOWER Semiconductor Ltd.
3/19/2015
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Preliminary
MD80HHC120E1S
MOSFET Module
MOSFET Characteristics TC=25oC unless otherwise noted
Symbol
RDS(on)
VGS(th)
gfs
IDSS
IGSS
RGint
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Parameter
Static Drain-Source
On-Resistance
Gate-Source Threshold
Voltage
Forward
Transconductance
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Internal Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller")
Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Test Conditions
ID=20A,VGS=18V,
Tj=25oC
ID=20A,VGS=18V,
Tj=125oC
ID=8.8mA,VDS=10V,
Tj=25oC
VDS=10V,ID=20A,
Tj=25oC
VDS=VDSS,VGS=0V,
Tj=25oC
VGS=VGSS,VDS=0V,
Tj=25oC
Min.
Typ.
Max.
40.0
55.5
62.5
4.0
7.4
VGS=0V,VDS=800V,
f=1.0MHz
ID=20A,VDS=400V,
VGS=18V
VDS=400V,ID=20A,
RG=0Ω,VGS=0/18V,
Tj=25oC
Unit
mΩ
V
S
500
μA
100
nA
3.15
4160
154
Ω
pF
pF
32
pF
212
54.0
nC
nC
62.0
nC
35
36
76
22
ns
ns
ns
ns
Body Diode Characteristics TC=25oC unless otherwise noted
Symbol
VSD
trr
Qr
IRM
Parameter
Diode Forward
Voltage
Diode Reverse
Recovery Time
Diode Reverse
Recovery Charge
Peak Reverse
Recovery Current
Test Conditions
IS=20A,VGS=0V,Tj=25oC
Min.
Typ.
3/19/2015
Unit
4.60
V
31
ns
44
nC
2.3
A
VR=400V,IF=20A,
di/dt=300A/μs,Tj=25oC
©2015 STARPOWER Semiconductor Ltd.
Max.
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Preliminary
MD80HHC120E1S
MOSFET Module
Reverse Diode Characteristics TC=25oC unless otherwise noted
Symbol
VF
trr
Qr
IRM
Parameter
Diode Forward
Voltage
Diode Reverse
Recovery Time
Diode Reverse
Recovery Charge
Peak Reverse
Recovery Current
Test Conditions
Min.
IF=40A,VGS=0V,Tj=25oC
VR=800V,IS=40A,
di/dt=1000A/μs,Tj=25oC
Typ.
Max.
Unit
1.40
1.60
V
18
ns
132
nC
4.5
A
NTC Characteristics TC=25oC unless otherwise noted
Symbol
R25
∆R/R
P25
Parameter
Rated Resistance
Deviation of R100
Power Dissipation
B25/50
B-value
Test Conditions
Min.
TC=100oC,R100=493.3Ω
Typ.
5.0
-5
R2=R25exp[B25/50(1/T21/(298.15K))]
Max.
5
20.0
3375
Unit
kΩ
%
mW
K
Module Characteristics TC=25oC unless otherwise noted
Symbol
LCE
RthJC
RthCH
M
G
Parameter
Stray Inductance
Junction-to-Case (per MOSFET)
Junction-to-Case (per Reverse Diode)
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
Mounting Torque, Screw M5
Weight of Module
©2015 STARPOWER Semiconductor Ltd.
Min.
3.0
3/19/2015
Typ.
35
0.220
0.264
0.030
110
4/6
Max.
0.449
0.540
Unit
nH
K/W
K/W
6.0
N.m
g
Preliminary
MD80HHC120E1S
MOSFET Module
Circuit Schematic
11,12
19,20
17
7
15,16 8
1
2
13,14
18
3
4
5
6
21,22
9,10
Package Dimensions
Dimensions in Millimeters
©2015 STARPOWER Semiconductor Ltd.
3/19/2015
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Preliminary
MD80HHC120E1S
MOSFET Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2015 STARPOWER Semiconductor Ltd.
3/19/2015
6/6
Preliminary