* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download Datasheet - StarPower Europe
Survey
Document related concepts
Power engineering wikipedia , lookup
Pulse-width modulation wikipedia , lookup
Immunity-aware programming wikipedia , lookup
History of electric power transmission wikipedia , lookup
Stray voltage wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Voltage optimisation wikipedia , lookup
Current source wikipedia , lookup
Optical rectenna wikipedia , lookup
Mains electricity wikipedia , lookup
Surge protector wikipedia , lookup
Alternating current wikipedia , lookup
Current mirror wikipedia , lookup
Buck converter wikipedia , lookup
Transcript
MD80HHC120E1S MOSFET Module STARPOWER MOSFET SEMICONDUCTOR MD80HHC120E1S 1200V/80A 4 in one-package General Description STARPOWER MOSFET Power Module provides very low RDS(on) as well as optimized intrinsic diode. It’s designed for the applications such SMPS and electric vehicle. Features SiC power MOSFET Low RDS(on) Optimized intrinsic reverse diode Avalanche ruggedness Low inductance case AlN substrate for low thermal resistance Isolated copper baseplate using DBC technology Typical Applications Electric vehicle Solar Power Switching mode power supply Equivalent Circuit Schematic ©2015 STARPOWER Semiconductor Ltd. 3/19/2015 1/6 Preliminary MD80HHC120E1S MOSFET Module Absolute Maximum Ratings TC=25oC unless otherwise noted MOSFET Symbol VDSS VGSS ID IDM PD Description Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Maximum Power Dissipation @ Tj=175oC Value 1200 -6/+22 80 160 334 Unit V V A A W Value 80 160 Unit A A Value 1200 80 160 Unit V A A Value 175 -40 to +150 -40 to +150 2500 Unit o C o C o C V Body Diode Symbol IS ISM Description Source Current Pulsed Source Current Reverse Diode Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2015 STARPOWER Semiconductor Ltd. 3/19/2015 2/6 Preliminary MD80HHC120E1S MOSFET Module MOSFET Characteristics TC=25oC unless otherwise noted Symbol RDS(on) VGS(th) gfs IDSS IGSS RGint Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Parameter Static Drain-Source On-Resistance Gate-Source Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Current Internal Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Test Conditions ID=20A,VGS=18V, Tj=25oC ID=20A,VGS=18V, Tj=125oC ID=8.8mA,VDS=10V, Tj=25oC VDS=10V,ID=20A, Tj=25oC VDS=VDSS,VGS=0V, Tj=25oC VGS=VGSS,VDS=0V, Tj=25oC Min. Typ. Max. 40.0 55.5 62.5 4.0 7.4 VGS=0V,VDS=800V, f=1.0MHz ID=20A,VDS=400V, VGS=18V VDS=400V,ID=20A, RG=0Ω,VGS=0/18V, Tj=25oC Unit mΩ V S 500 μA 100 nA 3.15 4160 154 Ω pF pF 32 pF 212 54.0 nC nC 62.0 nC 35 36 76 22 ns ns ns ns Body Diode Characteristics TC=25oC unless otherwise noted Symbol VSD trr Qr IRM Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current Test Conditions IS=20A,VGS=0V,Tj=25oC Min. Typ. 3/19/2015 Unit 4.60 V 31 ns 44 nC 2.3 A VR=400V,IF=20A, di/dt=300A/μs,Tj=25oC ©2015 STARPOWER Semiconductor Ltd. Max. 3/6 Preliminary MD80HHC120E1S MOSFET Module Reverse Diode Characteristics TC=25oC unless otherwise noted Symbol VF trr Qr IRM Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current Test Conditions Min. IF=40A,VGS=0V,Tj=25oC VR=800V,IS=40A, di/dt=1000A/μs,Tj=25oC Typ. Max. Unit 1.40 1.60 V 18 ns 132 nC 4.5 A NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value Test Conditions Min. TC=100oC,R100=493.3Ω Typ. 5.0 -5 R2=R25exp[B25/50(1/T21/(298.15K))] Max. 5 20.0 3375 Unit kΩ % mW K Module Characteristics TC=25oC unless otherwise noted Symbol LCE RthJC RthCH M G Parameter Stray Inductance Junction-to-Case (per MOSFET) Junction-to-Case (per Reverse Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Mounting Torque, Screw M5 Weight of Module ©2015 STARPOWER Semiconductor Ltd. Min. 3.0 3/19/2015 Typ. 35 0.220 0.264 0.030 110 4/6 Max. 0.449 0.540 Unit nH K/W K/W 6.0 N.m g Preliminary MD80HHC120E1S MOSFET Module Circuit Schematic 11,12 19,20 17 7 15,16 8 1 2 13,14 18 3 4 5 6 21,22 9,10 Package Dimensions Dimensions in Millimeters ©2015 STARPOWER Semiconductor Ltd. 3/19/2015 5/6 Preliminary MD80HHC120E1S MOSFET Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2015 STARPOWER Semiconductor Ltd. 3/19/2015 6/6 Preliminary