* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download Document
Spectral density wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Cavity magnetron wikipedia , lookup
Electronic engineering wikipedia , lookup
Alternating current wikipedia , lookup
Spectrum analyzer wikipedia , lookup
Mains electricity wikipedia , lookup
Stage monitor system wikipedia , lookup
Power inverter wikipedia , lookup
Opto-isolator wikipedia , lookup
Variable-frequency drive wikipedia , lookup
Ringing artifacts wikipedia , lookup
Wien bridge oscillator wikipedia , lookup
Regenerative circuit wikipedia , lookup
Atomic clock wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Mathematics of radio engineering wikipedia , lookup
Chirp spectrum wikipedia , lookup
Rectiverter wikipedia , lookup
RLC circuit wikipedia , lookup
Superheterodyne receiver wikipedia , lookup
been increased woth the applicatoon of transiStor suuotures based on GaAs or related compounds. Using ()-2pm GaAs MESFETs (I) and ()-25pm on,erted AIGaAs HEMTs (2], operating frequencies or 26·5 GHz have been presented for dynamic frequency dividers Stauc dividers based on AIGaAsGaAs-HBTs (3) and AllnAs-GalnAs-H8Ts (4] achieved frequency limits of 34-8 and 39·~GHz, respectively. The design and performance or 3 dynamic frequency divider operating in the 18 34 Gilt range based on AIGaAs/GaAs AIGaAs quantum well uansostors was presented in Reference 5. As far as we know this was the best result ever reported for HEMT circuits and similar to the frequency limit achie'ed by usc of AIGaAs- GaAs·H BTs. A further performance enhancement up to 51 GHz operation by the use of pseudomorphic AIGaAs/ lnGaAs MODF£Ts will be presented here. Al0 ,Ga0 •1 As/ l110 .uCia0.,As MODFF.T process : We have developed a mix and match technology combining e-bcaon with optical lithography whereby the e-bcam is used for writing the gatc:s only. Mushroom-shaped gates were used to reduce the resistance or O· IS1•m gates. The layer structure including n '·cap, delta doped GaAs supply layer, AIGaAs spacer and p~udomorphic lnGaAs channel was grown by M BE [6]. Precise control of the threshold voltage was guar· antccd by an AIGaAs etch stop u>ing a dry etch process. In our process sequence we have !:!-type MODFETs, NiCr thin film resistors, MIM capacitors. and two layers for intercon· nections. The top layer can be fabricated as air bridges thus reducing the capacitance. COFC'Uit dtsogn · Fig. I sebematocally depocts the dynamic frc· quency divoder. T"'o rong oscillators each consisting of one • SFV~ i ,~ I>.Jt~· ""' fliB f"ia. I C'lrru1t diagram ofd)MrrtJt frtqutrtl') d1lfdtr 2S--61 GHz DYNAMIC FREQUENCY DIVIDER BASED ON 0·16,um T- GATE AI 0 ., Ga0 •0 As/ln 0 .. .Ga0 .. . As MODFETs f•troductro•. Very hogh speed frequenC} di•iders are of oncreasong importance in a large number of system applications. The frequency limits or frequency divider circuits ha,·e 13th May 1993 Jr.,.r' RtSults: Measurements carried out on the dynamic frequency divider ga•e a lower limit for stable operation of 28GHz and Srm.Jt"i)ll· The dcsop and performance of a 23-SI GHz dynanllt frequctlt)' dl\ldcr based on ps<udomorphit AI. 1Ga01Asln0 ,Ga• .,As MODFETs ,.;th 6-ISpm mushroom·shaped gates are: pre2nted. n.e cirtun has 3 po"t:r con,umpuon of -440mW and a chip area of '200 x 220pm 1• ELECTRONICS LETTERS •v + 6r.,) - ' </<(r,,v • (2t 1 where 1 1 ~, and r., are the propagatoon delays of the inverter and the source follower. respectively. A. Thiede, P. Tasker, A. Hiilsmann, K. Kohler, W. Bronner, M. Schlechtwcg, M. Betroth, J. Braunstein and U. Nowotny lndtxl"ffltrnu . Fitld-#.ft"Ct transistors. Tran..tisuws. dut10f dh..ns ond mattrials push pull onvcrter and three source followers were fed back by transfer gates. A memory type Hipftop was used for data storage during the period when the lransfer gates show high resistance due to the low voltage applied to the clock input. The inverter stages were built up in OCFL with passive resistor load<, and push pull and soun.-e follower buffers were realised by enhancement type MODFETs. The circuit design was optimised by SPICE simulation based on an 'in house' developed F'ET network model [71. The operating frequency runge of the divider is gi'·en by Vol. 29 No 10 a value of 51 GHz for the maximum input frequency. Fig. 2 shows the pulse diagram of the 51 GHz input and the 25 5GHz output. To the best of our knowledge this is the highest input frequency ever reported for frequency divider circuits on &n) technology. The divider can operate ~Noth songle phase input. Both single phase and doiTer<ntoal outputs are available. The circuli runs at a pO"er supply of V00 = + J·S V and Vss - -o-sV The required input •oltage swing tt less than 800mV at 28GH> and decreases as the frequency increases. A power consumption of -440mW was measured for the divider oncluding the output buffers. The chip size was -200" m,,m•. 933 Swnnulry: The design and performance of a dynamic frequency divider were presented. This digital IC demonstrates ;n r-- -- r-- / ~ L~ v v -·- -- 1- -- ""'· - - Lb-. / 0.. ../ --. -- -·-· -' out ~ -- ~ --- f-- - ~ '" v -- -- . - f- ·- -- ""' I=- SAITO, T., 11\JJISHIRO, H. 1.. ICH IOKA, T.. TANAKA, K., N~HI, $., an<J SANO. Y.: '0·251'm &ate inverttd HEMT• for an ult~•-·high speed DCFL dynamic frequency divider'. IEEE.GaAs-lC-Symp., 1989. San Diego, USA. pp. 117- 120 YA.MAUCHl, Y .• NA KAJIMA, 0., NA(iATA, K., ITO, HIROSHI, and ISH!~ 'A 34·8GHz 1/4 Sialic frequency divider U$ing AIGaAs/ GaAs HBTs'. IEEE-GaAs-IC-Symp, San Diego. USA. 1989. pp. 121-124 JIJ:N:Sf....;, J. f •. HAt"tZI. M.. STANCHI NA, W , £.. METWEJI., R. A ., and A.F.NSCH. o. &: '39·SGHz static frequency divider implemented in AllnAs/GalnAS HBT technology'. IEEE-GaAs-IC-Symp.. Miamt -ch, USA. 1992. pp. 101- t04 IIASHI, T.: llUfDE. A., B.ERROTH, M.. NOWOTNY, V., S£18£1.. J.,. BOSCH, R., K0 HL£R, K., RAYNOR. 8., and SCHNEIOEK. J.: 'An 18- 34GHz. d)·namic rre QUtnty divider based on o-21•m AJGaAS/GaAs/AlGaAs quanlumwetl transistors•. Int. Solid State Circuits Conf.. San Francisco. USA, 1993, pp. 176 177 BRAUZio'STEIN, J., TASKER. P-. KOHI. ER. K. , SCIIWF.I ZF.R, T., H0LS.\(ANN, lOps/diVISIOn ,. .. SCHLECHTW£0, M.. and KAUiliL. a.: ·rnvesrigat1on of transpott Fig. 2 Measured pulse diag·ram ()/51 Gl-fz input ond appropriaJe Otdptlt ofdynamicfrrquency divider the ability of our pseudomorphic A10 . 1Ga... As/ ln0 .,. Ga 0 .,.As MODFETs with 0·151tm mushroom-shaped gates. phenome.na in p!<udomorphic MOOFETs', Int. Symp. GaAs and Rclattd Compound•. Seattl<. 1991. pp. 161-166 8£R.Rorn. M.: ·circuit simulator for heteros:lructure fic:ld effect transislors'. PhD Thesis, Ruhr-Uni\'tt"Sily 8ochum, 1991 Stable operation was achieved in the frequency range 2851 GHz with a power consumption of440mW. Acknowledgments: This work was a group effort and the authors are grateful to the entire staff of the laboratory. We especially want to thank H. S. Rupprecht for his directing and continuous encouragement, and T. Jakobus for his expert technology management. The German Federal Ministry of Research and Technology is acknowledged for the financial support through the DFE-project TK357/9. <!:) lEE 1993 AL·ALAOUI, M. A. : 'Novel digital integrator and diffcrcntiator', Efectro11. Lett., 1993. 29, (4), pp. 376- 378 1tod Apnl /993 A. Thiede. P. Ta~br, A. HU.lsmann. K. KOhler. W. Bronner, M. Schle· chtweg. M. Bcrroth, J. Braunstein and U. Nowotny (Fraunhbftr•ln.fti· turt for Applitd Solid Start Physics. Tullastr. 71. D-78(}(1 Frelburg. Gtrmany) References JENSE.N, J. F., 5..\I.MON, L. C .. D£AK1K 0. S., and DELANEY, M. J, : '26 0Hz GaAs room-temperature dynam•c dovidcr circuit'. IEEEGaAs-lC-Symp, Portland. USA. 1987. pp. 201 - 203 934 ERRATA Authors ' corrections The third and founh subcap1ions to Fig. 1 should read: 0 rectangular • trape-toidal ELECTRONICS LETTERS 13th May 1993 Vol. 29 No. 10