Download VS-VSKD600 Series

VS-VSKD600 Series
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Vishay Semiconductors
Standard Diodes
(Super MAGN-A-PAK Power Modules), 600 A
FEATURES
• High current capability
• High surge capability
• High voltage ratings up to 2000 V
• 3000 VRMS isolating voltage with non-toxic
substrate
• Industrial standard package
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Super MAGN-A-PAK
• Rectifying bridge for large motor drives
• Rectifying bridge for large UPS
PRODUCT SUMMARY
IF(AV)
600 A
Type
Modules - diode, high voltage
Package
Super MAGN-A-PAK
Circuit configuration
Two diodes doubler circuit
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
TC
IF(RMS)
IFSM
I2t
VALUES
UNITS
600
A
100
°C
942
A
°C
TC
100
50 Hz
19 000
60 Hz
20 100
50 Hz
1805
60 Hz
1683
I2√t
18 050
A
kA2s
kA2√s
VRRM
Range
800 to 2000
V
TStg, TJ
Range
-40 to +150
°C
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-VSKD600..
VOLTAGE
CODE
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
50
Revision: 28-Apr-17
Document Number: 93583
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-VSKD600 Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS forward current
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
TEST CONDITIONS
A
100
°C
180° conduction, half sine wave at TC = 100 °C
942
A
t = 10 ms
19.0
180° conduction, half sine wave
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I2t
Maximum I2√t for fusing
I2√t
UNITS
600
t = 10 ms
Maximum I2t for fusing
VALUES
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
20.1
16.2
Sinusoidal half wave,
initial TJ = TJ maximum
17.2
1805
1683
1319
100 % VRRM
reapplied
kA
kA2s
1230
t = 0.1 ms to 10 ms, no voltage reapplied
18 050
Low level value of threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.70
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
0.77
kA2√s
V
Low level value of forward slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.28
High level value of forward slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.25
Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse
1.45
V
VALUES
UNITS
3000
V
50
mA
VALUES
UNITS
-40 to +150
°C
Maximum forward voltage drop
VFM
mΩ
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
RMS insulation voltage
VINS
t=1s
Maximum peak reverse and off-state leakage
current
IRRM
TJ = TJ maximum, rated VRRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per junction
RthJC
Maximum thermal resistance,
case to heatsink per module
RthC-hs
DC operation
0.065
Mounting surface smooth, flat and greased
0.02
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound
6 to 8
K/W
Super MAGN-A-PAK to heatsink
Mounting
torque
± 10 %
TEST CONDITIONS
busbar to Super MAGN-A-PAK
Approximate weight
Nm
12 to 15
1500
Case style
See dimensions - link at the end of datasheet
g
Super MAGN-A-PAK
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.009
0.006
120°
0.011
0.011
90°
0.014
0.015
60°
0.021
0.022
30°
0.037
0.038
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 28-Apr-17
Document Number: 93583
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKD600 Series
VSKD600.. Series
RthJC (DC) = 0.065 K/W
140
130
Conduction Angle
120
110
100
30°
90°
120°
90
180°
80
0
Maximum Allowable Case Temperature (°C)
60°
100
200
300
400
500
600
Maximum Average Forward Power Loss (W)
150
Vishay Semiconductors
1000
800
700
600
500
400
RMS Limit
Conduction Period
300
VSKD600.. Series
Per Junction
TJ = 150°C
200
100
0
700
0
200
400
600
800
1000
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
VSKD600.. Series
R thJC (DC) = 0.065 K/W
140
130
120
Conduction Period
110
60°
100
30°
90°
90
120°
180°
DC
80
18000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
16000
Initial TJ = 150°C
@ 60 Hz 0.0083 s
14000
@ 50 Hz 0.0100 s
12000
10000
8000
VSKD600.. Series
Per Junction
6000
4000
0
200
400
600
800
1000
1
700
180°
120°
90°
60°
30°
500
RMS Limit
400
300
Conduction Angle
200
VSKD600.. Series
Per Junction
TJ = 150°C
100
0
0
100
200
300
400
500
100
600
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A
)
Fig. 2 - Current Ratings Characteristics
600
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
DC
180°
120°
90°
60°
30°
900
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (°C)
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20000
18000
16000
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration.
Initial TJ
= 150°C
No Voltage Reapplied
Rated VRRM Reapplied
14000
12000
10000
8000
6000
4000
0.01
VSKD600.. Series
Per Junction
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 28-Apr-17
Document Number: 93583
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKD600 Series
Vishay Semiconductors
1000
=
W
K/
W
K/
2
0.0
W
K/
-D
ta
el
180°
(Sine)
SA
4
K/
W
0.
12
K/
W
0.1
6K
/W
800
600
6
0.
08
DC
R th
0
0.
0
0.
0.2
5
400
VSKD600.. Series
Per Junction
TJ = 150°C
200
R
Maximum Total Forward Power Loss (W)
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K/ W
0.3
5K
/W
0.5 K
/W
0
0
200
400
600
800
1000
0
Total RMS Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
SA
=
/W
1K
0.0
K/
W
4K
/
W
0.0
5K
/W
0.
0
-D
ta
el
1500
R th
2000
W
K/
0.
03
180°
(Sine)
180°
(Rect)
2500
02
0.
0.0
8K
/W
0.12
1000
R
Maximum Total Power Loss (W)
3000
K/ W
2 x VSKD600.. Series 0.2 K
/W
Single Phase Bridge
Connected
TJ = 150°C
500
0
0
200
400
600
800
1000
1200
0
Total Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C )
Fig. 8 - Forward Power Loss Characteristics
R th
4000
SA
0.
02
3000
1500
0.08
3 x VSKD600.. Series
Three Phase Bridge
Connected
T J = 150°C
1000
500
R
0.0
5
ta
el
2000
-D
2500
W
K/
K/
W
0.0
3K
/W
120°
(Rect)
01
0.
3500
=
Maximum Total Power Loss (W)
4500
K/ W
K/ W
0.12 K
/W
0.2 K/ W
0
0
300
600
900
1200
1500
Total Output Current (A)
1800
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C )
Fig. 9 - Forward Power Loss Characteristics
Revision: 28-Apr-17
Document Number: 93583
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKD600 Series
www.vishay.com
Transient Thermal Impedance Z thJC (K/W )
Vishay Semiconductors
0.1
VSKD600.. Series
Per Junction
0.01
Steady State Value:
R thJC = 0.065 K/W
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJC Characteristic
ORDERING INFORMATION TABLE
Device code
VS-VS KD
1
2
600
-
3
20
4
1
-
Vishay Semiconductors product
2
-
Circuit configuration D = 2 diodes in series
(see circuit configuration table)
3
-
Current rating
4
-
Voltage code x 100 = VRRM (see voltage ratings table)
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
Two diodes doubler circuit
KD
CIRCUIT DRAWING
3
-
2
+
~
1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95088
Revision: 28-Apr-17
Document Number: 93583
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Super MAGN-A-PAK Diode
52 (2.05)
DIMENSIONS in millimeters (inches)
Ø 6.5 mm ± 0.3 mm x 4 Holes (Typ.)
31.0
(1.22)
44.0
(1.73)
50.0
(1.97)
Fast-on tabs
2.8 x 0.8 (0.11 x 0.03)
3
2
26.0
(0.98)
26.0
(0.98)
20.1
(0.78)
1
28.0
(1.10)
60.0 (2.36)
48.0 (1.89)
M10
36.4 (1.14)
4.5 (0.20)
112.0 (4.41)
124.0 (4.88)
1.0 (0.039)
149.0 (5.67)
Revision: 20-Aug-13
Document Number: 95088
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Super MAGN-A-PAK Thyristor/Diode
DIMENSIONS in millimeters (inches)
18 (0.71) max.
52 (2.05)
19 (0.75)
Ø 6.5 mm ± 0.3 mm x 4 holes (Typ.)
31.0
(1.22)
44.0
(1.73)
50.0
(1.97)
Fast-on tabs
2.8 x 0.8 (0.11 x 0.03)
1
3
2
26.0
(0.98)
26.0
(0.98)
112.0 (4.41)
124.0 (4.88)
5
4
6
7
28.0
(1.10)
48.0 (1.89)
M10
17.8
(0.70)
9.9 ± 0.5 (0.39 ± 0.02)
60.0 (2.36)
48 (1.90)
17 (0.67) max.
4.5 (0.20)
36.4 (1.14)
5, 6 = Gate
4, 7 = Cathode
1.0 (0.039)
149.0 (5.67)
Revision: 14-Dec-16
Document Number: 95283
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000