Download BD157/158/159 NPN Epitxial Silicon Transistor

BD157/158/159
BD157/158/159
Low Power Fast Switching Output Stages
• For T.V Radio Audio Output Amplifiers
TO-126
1
1. Emitter
2.Collector
3.Base
NPN Epitxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: BD157
: BD158
: BD159
Value
275
325
375
Units
V
V
V
VCEO
Collector-Emitter Voltage
: BD157
: BD158
: BD159
250
300
350
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
0.5
A
ICP
*Collector Current (Pulse)
1.0
A
IB
Base Current
PC
Collector Dissipation (TC=25°C)
TJ
TSTG
0.25
A
20
W
Junction Temperature
50
°C
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
ICBO
Parameter
*Collector-Emitter Breakdown Voltage
: BD157
: BD158
: BD159
Test Condition
IC = 1mA, IB = 0
Min.
Typ.
Max.
250
300
350
Units
V
V
V
Collector Cut-off Current
: BD157
: BD158
: BD159
VCB = 275V, IE = 0
VCB = 325V, IE = 0
VCB = 375V, IE = 0
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE
* DC Current Gain
VCE = 10V, IC = 50mA
30
100
100
100
µA
µA
µA
100
µA
240
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD157/158/159
Typical Characteristics
100 0
2.0
IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
V CE = 10V
100
10
1
1E -401
0.00
1E -31
0.00
0.01
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1E-4
1
1E-3
I C [A], COLLECTOR CURRENT
Figure 1. DC current Gain
0.1
1
Figure 2. Collector-Emitter Saturation Voltage
25
IC MAX. (Pulsed)
PC[W], POWER DISSIPATION
10
10µs
1
s
0µ
50
s
1m DC
IC[A], COLLECTOR CURRENT
0.01
IC[A], COLLECTOR CURRENT
100µ s
0.1
0.01
BD157
BD158
BD159
20
15
10
5
0
1E-3
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
1000
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 4. Power Derating
Rev. A1, June 2001
BD157/158/159
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
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CROSSVOLT™
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EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
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HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
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QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
Mouser Electronics
Authorized Distributor
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