Download 4_Balbuena

6th Trento Workshop on Advanced Silicon Radiation Detectors
1/16
Simulations of 3D-DDTC
Silicon detectors
J.P. Balbuena, G. Pellegrini, R. Bates, C. Fleta,
M. Lozano, M. Ullán
Semiconductor radiation detectors group
Institut de Microelectrònica de Barcelona
Centre Nacional de Microelectrònica - CSIC
Spain
3rd March 2011
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon RadiationBlocks
Detectors
Columns
Increments
Transitions
Hypertext
2/16
1 Motivation
2 Simulation: Layout and parameters
3 Simulation: Electric field
4 Simulation: Charge multiplication
5 Conclusions/Future work
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon RadiationBlocks
Detectors
Columns
Increments
Transitions
Hypertext
3/16
1 Motivation
2 Simulation: Layout and parameters
3 Simulation: Electric field
4 Simulation: Charge multiplication
5 Conclusions/Future work
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon Radiation Detectors
4/16
3D-DDTC measurements
Irradiated 3D detectors present Charge multiplication effect:
 above 150V for p-type
 above 260V for n-type
[M. Köhler, University of Freiburg, Germany]
Objective
Develop 3D detectors with Charge multiplication effect for low
Bias voltages before irradiation by changing the bulk doping
concentration.
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon RadiationBlocks
Detectors
Columns
Increments
Transitions
Hypertext
5/16
1 Motivation
2 Simulation: Layout and parameters
3 Simulation: Electric field
4 Simulation: Charge multiplication
5 Conclusions/Future work
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon Radiation Detectors
P-type
Geometry
1E-9
pitch: 80 µm
wafer thickness: 285 µm
column depth: 250 µm
column diameter: 10 µm
1E-10
Leakage current (A)
-
Doping levels
-
1E-11
1000 ·cm
500 ·cm
300 ·cm
200 ·cm
100 ·cm
50 ·cm
1E-12
1E-13
n+ columns: 1019 cm-3
p+ columns: 1019 cm-3
p-stop: 1018 cm-3
Si/SiO2 charge: 5·1011 cm-2
p+
6/16
1E-14
0
30
60
90
120
150
180
210
240
270
300
Reverse Bias (V)
p+
n+
p+
p+
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon Radiation Detectors
N-type
Geometry
1E-10
pitch: 80 µm
wafer thickness: 285 µm
column depth: 250 µm
column diameter: 10 µm
1E-11
Leakage current (A)
-
Doping levels
- n+ columns: 1019 cm-3
- p+ columns: 1019 cm-3
- Si/SiO2 charge: 5·1011 cm-2
n+
7/16
1000 ·cm
500 ·cm
300 ·cm
200 ·cm
100 ·cm
50 ·cm
1E-12
1E-13
1E-14
0
30
60
90
120
150
180
210
240
270
Reverse Bias (V)
n+
p+
n+
n+
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon Radiation Detectors
Physics
8/16
Model
Mobility
Doping dependance, High Electric field
saturation
Generation and Recombination
Doping dependant Shockley-Read-Hall
Generation recombination, Surface
recombination model
Impact ionization
University of Bologna impact ionization
model
Tunneling
Band-to-band tunneling, Hurkx trapassisted tunneling
Oxide physics
Oxide as a wide band gap semiconductor
for mips (irradiated), interface charge
accumulation
Radiation model
Acceptor/Donor states in the band gap
(traps)
[M. Benoit, Laboratoire de l’accélérateur linéar (LAL), Orsay, France]
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon RadiationBlocks
Detectors
Columns
Increments
Transitions
Hypertext
9/16
1 Motivation
2 Simulation: Layout and parameters
3 Simulation: Electric field
4 Simulation: Charge multiplication
5 Conclusions/Future work
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon Radiation Detectors
10/16
Cut at z = 142,5 µm for Vbias = 150 V
18
1000 ·cm
500 ·cm
300 ·cm
200 ·cm
100 ·cm
n+
16
Electric Field (V/µm)
Electric Field (p-type)
14
12
10
8
p+
6
4
2
0
0
10
20
30
40
50
60
Electric Field (V/µm)
Distance (µm)
Cut at z = 250
35 µm
142,5
µm
µm
35
26
24
30
22
20
25
18
16
20
14
12
15
10
8
10
6
4
5
2
0
1000 ·cm
500 ·cm
300 ·cm
200 ·cm
100 ·cm
50 ·cm
0
50
100
150
200
250
300
Reverse Bias (V)
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon Radiation Detectors
16
Cut at z = 142,5 µm for Vbias = 150 V
1000 ·cm
500 ·cm
300 ·cm
200 ·cm
100 ·cm
50 ·cm
14
Electric Field (V/µm)
Electric Field (n-type)
11/16
12
10
8
p+
n+
6
4
2
0
0
10
20
30
40
50
60
Electric Field (V/µm)
Distance (µm)
Cutatatz z= =142,5
250
µm
Cut
35 µm
40
26
38
24
36
34
22
32
20
30
28
18
26
16
24
22
14
20
12
18
16
10
14
8
12
10
6
8
4
6
4
2
2
0
1000 ·cm
500 ·cm
300 ·cm
200 ·cm
100 ·cm
50 ·cm
0
50
100
150
200
250
300
Reverse Bias (V)
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon RadiationBlocks
Detectors
Columns
Increments
Transitions
Hypertext
12/16
1 Motivation
2
Using PowerPoint
Simulation:
Layout and Nice
parameters
to Typeset
Presentations
3 Simulation: Electric field
4 Simulation: Charge multiplication
5 Conclusions/Future work
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon Radiation Detectors
13/16
Charge multiplication
Compromise between low full depletion voltages and high
enough voltages for Charge multiplication
Charge Collected (electrons)
40000
Voltage (V)
300
VFD p-type
200
V (Emax~ 14 V/µm) p-type
VFD n-type
V (Emax~ 14 V/µm) n-type
100
0
0
200
400
600
800
1000
p-type (Vbias =200V)
36000
n-type (Vbias =100V)
32000
28000
24000
20000
16000
0
Resistivity (·cm)
100
200
300
400
600
Resistivity (·cm)
V = 150 V for both n and p-type
MIP
ρn = 100 Ω·cm
Charge multiplication
ρp = 200 Ω·cm
J.P. Balbuena
500
22800 electrons
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon Radiation Detectors
14/16
Charge multiplication in the irradiated 3D model
Doping concentration: Neff = 7·1011 cm-3 (p-type)
Fluence: Φeq = 2·1015 neq/cm2
30000
Vbias = 200 V
Vbias = 250 V
11
Qox = 5·10 cm
-10
6x10
6
12
Qox = 10 cm
-2
-2
12
-2
12
-2
-10
4
Qox = 2·10 cm
2
Qox = 3·10 cm
5x10
Charge Collected (electrons)
Electric field (V/µm)
Leakage current (A)
-9
10
14
-10
9x10
12
-10
8x10
10
-10
7x10
8
-10
4x10 0
0
10
50
100
20
150
30
200
40
250
50
300
60
15
n/cm
2
26000
24000
22000
20000
18000
16000
0
100
200
300
Bias voltage (V)
Bias
Distance
voltage
(µm)
(V)
11 cm-2
Electric field
compatible
with
Interface
charge:
Qox = 5·10
Charge multiplication for 250V
J.P. Balbuena
eq = 2 x 10
28000
Unexpected reduction of the
charge collected for 250V !!
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon RadiationBlocks
Detectors
Columns
Increments
Transitions
Hypertext
15/16
1 Motivation
2
Using PowerPoint
Simulation:
Layout and Nice
parameters
to Typeset
Presentations
3 Simulation: Electric field
4 Simulation: Charge multiplication
5 Conclusions/Future work
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
6th Trento Workshop on Advanced Silicon Radiation Detectors
16/16
Conclusions
 Obtained charge multiplication effect in both n and p-type
substrates without irradiation
Future work
 Complete the study on multiplication effect for different
doping levels at different biasing voltages
 Solve problems of charge multiplication in the irradiated
3D model.
J.P. Balbuena
Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)