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6th Trento Workshop on Advanced Silicon Radiation Detectors 1/16 Simulations of 3D-DDTC Silicon detectors J.P. Balbuena, G. Pellegrini, R. Bates, C. Fleta, M. Lozano, M. Ullán Semiconductor radiation detectors group Institut de Microelectrònica de Barcelona Centre Nacional de Microelectrònica - CSIC Spain 3rd March 2011 J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon RadiationBlocks Detectors Columns Increments Transitions Hypertext 2/16 1 Motivation 2 Simulation: Layout and parameters 3 Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon RadiationBlocks Detectors Columns Increments Transitions Hypertext 3/16 1 Motivation 2 Simulation: Layout and parameters 3 Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon Radiation Detectors 4/16 3D-DDTC measurements Irradiated 3D detectors present Charge multiplication effect: above 150V for p-type above 260V for n-type [M. Köhler, University of Freiburg, Germany] Objective Develop 3D detectors with Charge multiplication effect for low Bias voltages before irradiation by changing the bulk doping concentration. J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon RadiationBlocks Detectors Columns Increments Transitions Hypertext 5/16 1 Motivation 2 Simulation: Layout and parameters 3 Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon Radiation Detectors P-type Geometry 1E-9 pitch: 80 µm wafer thickness: 285 µm column depth: 250 µm column diameter: 10 µm 1E-10 Leakage current (A) - Doping levels - 1E-11 1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm 1E-12 1E-13 n+ columns: 1019 cm-3 p+ columns: 1019 cm-3 p-stop: 1018 cm-3 Si/SiO2 charge: 5·1011 cm-2 p+ 6/16 1E-14 0 30 60 90 120 150 180 210 240 270 300 Reverse Bias (V) p+ n+ p+ p+ J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon Radiation Detectors N-type Geometry 1E-10 pitch: 80 µm wafer thickness: 285 µm column depth: 250 µm column diameter: 10 µm 1E-11 Leakage current (A) - Doping levels - n+ columns: 1019 cm-3 - p+ columns: 1019 cm-3 - Si/SiO2 charge: 5·1011 cm-2 n+ 7/16 1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm 1E-12 1E-13 1E-14 0 30 60 90 120 150 180 210 240 270 Reverse Bias (V) n+ p+ n+ n+ J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon Radiation Detectors Physics 8/16 Model Mobility Doping dependance, High Electric field saturation Generation and Recombination Doping dependant Shockley-Read-Hall Generation recombination, Surface recombination model Impact ionization University of Bologna impact ionization model Tunneling Band-to-band tunneling, Hurkx trapassisted tunneling Oxide physics Oxide as a wide band gap semiconductor for mips (irradiated), interface charge accumulation Radiation model Acceptor/Donor states in the band gap (traps) [M. Benoit, Laboratoire de l’accélérateur linéar (LAL), Orsay, France] J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon RadiationBlocks Detectors Columns Increments Transitions Hypertext 9/16 1 Motivation 2 Simulation: Layout and parameters 3 Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon Radiation Detectors 10/16 Cut at z = 142,5 µm for Vbias = 150 V 18 1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm n+ 16 Electric Field (V/µm) Electric Field (p-type) 14 12 10 8 p+ 6 4 2 0 0 10 20 30 40 50 60 Electric Field (V/µm) Distance (µm) Cut at z = 250 35 µm 142,5 µm µm 35 26 24 30 22 20 25 18 16 20 14 12 15 10 8 10 6 4 5 2 0 1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm 0 50 100 150 200 250 300 Reverse Bias (V) J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon Radiation Detectors 16 Cut at z = 142,5 µm for Vbias = 150 V 1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm 14 Electric Field (V/µm) Electric Field (n-type) 11/16 12 10 8 p+ n+ 6 4 2 0 0 10 20 30 40 50 60 Electric Field (V/µm) Distance (µm) Cutatatz z= =142,5 250 µm Cut 35 µm 40 26 38 24 36 34 22 32 20 30 28 18 26 16 24 22 14 20 12 18 16 10 14 8 12 10 6 8 4 6 4 2 2 0 1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm 0 50 100 150 200 250 300 Reverse Bias (V) J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon RadiationBlocks Detectors Columns Increments Transitions Hypertext 12/16 1 Motivation 2 Using PowerPoint Simulation: Layout and Nice parameters to Typeset Presentations 3 Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon Radiation Detectors 13/16 Charge multiplication Compromise between low full depletion voltages and high enough voltages for Charge multiplication Charge Collected (electrons) 40000 Voltage (V) 300 VFD p-type 200 V (Emax~ 14 V/µm) p-type VFD n-type V (Emax~ 14 V/µm) n-type 100 0 0 200 400 600 800 1000 p-type (Vbias =200V) 36000 n-type (Vbias =100V) 32000 28000 24000 20000 16000 0 Resistivity (·cm) 100 200 300 400 600 Resistivity (·cm) V = 150 V for both n and p-type MIP ρn = 100 Ω·cm Charge multiplication ρp = 200 Ω·cm J.P. Balbuena 500 22800 electrons Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon Radiation Detectors 14/16 Charge multiplication in the irradiated 3D model Doping concentration: Neff = 7·1011 cm-3 (p-type) Fluence: Φeq = 2·1015 neq/cm2 30000 Vbias = 200 V Vbias = 250 V 11 Qox = 5·10 cm -10 6x10 6 12 Qox = 10 cm -2 -2 12 -2 12 -2 -10 4 Qox = 2·10 cm 2 Qox = 3·10 cm 5x10 Charge Collected (electrons) Electric field (V/µm) Leakage current (A) -9 10 14 -10 9x10 12 -10 8x10 10 -10 7x10 8 -10 4x10 0 0 10 50 100 20 150 30 200 40 250 50 300 60 15 n/cm 2 26000 24000 22000 20000 18000 16000 0 100 200 300 Bias voltage (V) Bias Distance voltage (µm) (V) 11 cm-2 Electric field compatible with Interface charge: Qox = 5·10 Charge multiplication for 250V J.P. Balbuena eq = 2 x 10 28000 Unexpected reduction of the charge collected for 250V !! Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon RadiationBlocks Detectors Columns Increments Transitions Hypertext 15/16 1 Motivation 2 Using PowerPoint Simulation: Layout and Nice parameters to Typeset Presentations 3 Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC) 6th Trento Workshop on Advanced Silicon Radiation Detectors 16/16 Conclusions Obtained charge multiplication effect in both n and p-type substrates without irradiation Future work Complete the study on multiplication effect for different doping levels at different biasing voltages Solve problems of charge multiplication in the irradiated 3D model. J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)