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Synthesis, Structural and Optical Characterization of NanoCrystalline ZnO thin film deposited by Sol-Gel method Amanpal Singh, Shivani Koul, Anuj Kumar, Mukesh Kumar, and Dinesh Kumar Electronic Science Department, Kurkshetra University, Kurukshetra (Haryana)-136119 Abstract Zinc oxide is a versatile II-VI compound semiconductor material has gained detailed attention in few times due to its wide applications and superior physical-chemical properties making Zinc Oxide as a basis of Nano- world. ZnO Nanostructures, such as nanowires and nanorods are widely being used in sensing, electroluminiscence devices. Transparent, nano-crystalline and crack free film was deposited on corning glass and silicon substrate by sol-gel technique. A transparent sol of 0.33mol/l is prepared by dissolving Zinc acetate dihydrate in 2-methoxyethanol using mono-ethanolamine (MEA) as sol stabilizer. The results show that deposited film is obtained in nano range. 1ml water in 30 ml of in 2-methoxyethanol makes easy to dissolve Zinc acetate dehydrate and increase the stability of sol at higher concentration. The film is annealed in oxygen environment at 500ºC for one hour and characterized by X-ray diffraction, Atomic force microscopy and UV-VIS absorption spectroscopy. Raman measurement of the film is also done. X-ray dominated sharp peak at 34.44° (2θ ) angle and relatively higher peak than other observed peaks showing extremely preferred crystal growth along (002) i.e; the highly wurtzite crystallinty in sample. Grain size of sample was observed by XRD and AFM and was found near to 40 nm. UV-Study shows sharp ultraviolet absorption edges at approximately 375 nm wavelength. The optical band gap energy Eg was 3.3 eV for thin film. Thin film was characterized with Raman spectroscopy excited by laser light of 514 nm wavelength. The sharp spectral peaks from all Raman active phonon modes have been distinctly observed. Red shift of longitudinal-optical phonon scattering peaks is observed in thin film compared to bulk sample.