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Transcript
REFERENCE NO: E51 - ELECTRO 3
1. COURSE NAME: Electro Technology 3
2. COURSE DESCRIPTIONS: The course includes the electronics, intrinsic
conduction, PN junction components in an electrical circuit, active
components, diodes, leds, transistors, thyristor, semi-conductors
components, integrated circuits and numeral problems.
3. NUMBER OF UNITS FOR LECTURE AND LABORATORY:
3 LECTURE, 3 LABORATORY = 4 UNITS
4. NUMBER OF CONTACT HOURS PER WEEK:
3 LECTURE, 3 LABORATORY = 6 HOURS.
5. PREREQUISITE: Electro 1 and 2
6. COURSE OBJECTIVES: The students shall be able to posses sufficient
knowledge of marine electrical machinery and systems to carry out
duties of a watchkeeping engineer officer in a safe and efficient
manner.
FUNCTION: F2 - Electrical and Electronic and Control Engineering at the
operational level (Operate Alternators, Generators and Control
Systems)
7. COURSE OUTLINE:
LEARNING OBJECTIVES/OUTCOMES:
The students shall be able to . . . . . .
7.1 Explain Electronics
7.1.1 To explain how some substance when in solid state will
have a molecular structure turned crystalline
7.1.2 To state the structure of solid substance which does not
have a symmetric arrangement of its atoms or molecules is
turned amorphous
7.1.3 Examples of semiconductors are stated as:
7.1.3.1 Germanium
7.1.3.2 Silicon
7.1.3.3 Selenium
7.1.3.4 tellurium
7.1.4 To state the development of transistors came out from
investigations of semiconductors
7.1.5 To explain and demonstrate semi-conductors. A semi
conductor normally has the form of crystal. Under normal
E51 ELECTRO 3
page 1 of 5
condition, semiconductors cannot be classified as
conductors or insulators
7.1.6 To explain a semiconductors crystal at some temperature
above absolute zero there will be:
7.1.6.1 some level of internal energy due to the normal
molecular motions (vibrations) within the crystal
lattice and acting as charge carriers
7.2 To Explain “Intrinsic Conduction”
7.2.1 The term “intrinsic conduction” is explained
7.2.2 How intrinsic conduction the random motion of free electrons
will produce a negatively charge particle whenever it is
“captured” in the crystal lattice
7.2.3 Why intrinsic conduction, because of its randomness, is not
a usually preferred
7.3 Describe Pn Junction
7.3.1 To describe the thin layer of n-type material is said to
constitute a “junction” in the s used, the p and n-type
materials. When a n-type doping materials (e.g. arsenic) is
defused into the exposed parts of the surface of a p-type
silicon crystal, a thin layer of n-type material will form at the
surface where a diffusion has taking place
7.3.2 The term “junction” is used, the p and n-type materials form
part of a continuous crystal structure
7.3.3 The important user for diodes in electrical powers supplies
for
7.3.3.1 converting AC to DC
7.3.3.2 Voltage regulation (stabilization)
7.3.3.3 switching devices as stated
7.4 Discuss Components In An Electrical Circuit
7.4.1 Components in an electrical circuit which do not act to
change or modify circuit conditions termed passive
7.4.2 Examples of passive components are listed:
7.4.2.1 resistors
7.4.2.2 thermistors
7.4.2.3 inductors
7.4.2.4 quartz crystal; and
7.4.2.5 silicon temperature sensors
7.4.3 Quartz crystal are used in the form of a thin plate in
resonant circuits, and such circuits are used to produce
oscillation
7.4.4 To state the use of quartz crystal produces a more stable
and steadier frequency on the voltage than the equivalent
circuit containing inductor, resistors and capacitors
7.4.5 A silicon crystal could be used highly as highly sensitive
solid state temperature sensor is stated
E51 ELECTRO 3
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7.4.6 A silicon temperature sensor is a pure silicon crystal, and
the relationship between its resistance and temperature is
almost linear, which give it an advantage over the thermistor
with its exponential relationship.
7.5 To Discuss “Active Components”
7.5.1 Components which can of themselves change or modify
circuit conditions termed "active” are stated
7.5.2 Examples of “active” components are listed:
7.5.2.1 diodes
7.5.2.2 rectifiers
7.5.2.3 zener diodes
7.5.2.4 light-Emitting Diodes (LEDs)
7.5.2.5 transistor:
7.5.2.6 junction transistors
7.5.2.7 field-Effect Transistors (FETs)
7.5.2.8 thyristors
7.5.2.9 heat sink
7.6
To Explain Diodes
7.6.1 Diodes are suitable crystal (usually silicon) which have a
“junction” of p and n-type material
7.6.2 A diodes acts as a conductor and current flows when
reverse biased is stated
7.6.3 A diode acts as an insulator and no current flows when
reverse biased is stated
7.6.4 To state other diodes
7.6.5 To state the early methods of changing AC to DC used to
thermionic tubes or metal form devices
7.6.6 To state silicon diodes are now widely used to rectify AC to
DC
7.6.7 A Zener diode is a pn silicon junction diode that is reverse
biased and with the supply volatge sufficient to produce the
“avalanche” of “ breakdown” effect
7.6.8 A Zener diode will have a negative temperature coefficient
7.6.9 Curve voltage and current for a Zener diode are sketched
7.7
Explain Leds
7.7.1 Crystals menufactured from gallium phosphide and gallium
arsenide have light-emitting properties when a small electric
current is passed
7.7.2 LEDs are essentially pn diodes operated in forward biased
7.7.3 The color emitted from such a diode depends upon the
materials used in its manufacture, and that the unusual
colors are:
7.7.3.1 yellow
7.7.3.2 green
7.7.3.3 red is stated
E51 ELECTRO 3
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7.7.4 A resistor is always used in series with a LED as a “current
limited”
7.7.5 LEDs are used for numeric displays and as indicators in
electrical supply systems is stated
7.8
Discuss Transistors
7.8.1 Transistors often involve power transfer and are usually
manufactured from silicon (resistors) material is stated
7.8.2 To state the name “Transistor” is divided from transfer and
resistors
7.8.3 The general term of a transistor is a crystal (usually silicon)
is stated
7.8.4 The basic transistor has three electrode regions within the
one crystal structure (compared to two in the pn junction
diode) is stated
7.8.5 These regions in a transistor termed:
7.8.5.1 base
7.8.5.2 collector
7.8.5.3 emmits and that there will be three connections
terminals are stated
7.8.6 State Field Effect Transistors (FET)
7.8.7 The n (or p) region of FET is formed in the usual way by
diffusion of an appropriate dopant into the basic p (or n)
crystal materials to produce regions termed “channel” or
“gate” is stated
7.8.8 To state the connection terminal to the channel are termed
“source” and “drain” is stated
7.8.9 The three (3) terminal corrections (source, drain and gate)
of FET correspond to the emitter, collector and base”
respectively of a bipelar transistor as stated
7.9
Discuss Thyristor
7.9.1 A thyristor is constructed from four (4) layers of doped
crystal material is stated
7.9.2 The thyristor is essentially an on-off switching device
7.9.3 A thyristor is a large-current small voltage device with a
very low resistance (only a fraction of an ohm) in its forward
or conducting state
7.9.4 Thyristor are widely used as switches, speed controller or
current controller
7.10 Discuss Semi-Conductor Components
7.10.1 A certain amount of power must be dissipated in all semiconductor components to keep the component within safe
working limits of temperature
7.10.2 In extreme cases, cooling air is supplied to the heat sinks
to assist connection
E51 ELECTRO 3
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7.11 Define Integrated Circuits
7.11.1 An electronic circuit is concentrated from a number of
components, such as diodes, transistors, resistors,
capacitors, etc.
7.11.2 These components have to be interconnected to each
other in the correct sequence to form the complete circuit
7.11.3 Circuit produced in this way were called “hybrid” integrated
circuits is stated
7.12 Discuss Numeral Problems
7.12.1 Numeral problems related to the semiconductor devices
used in electronic circuits are solved
7.12.2 A supervised program of practical work on electronic
circuits in machinery central and alarm systems is carried
out
8. EQUIPMENT, MATERIALS, CHEMICALS, TEACHING AIDS:
The equipment, materials, chemicals, teaching aids needed in
this course is listed in the attached APPENDIX 1.
9. REFERENCES:
9.1 STCW Code. Table A - III/I.
9.2 Reed, Thomas. “Advance Electro-Technology for Marine
Engineers”.
9.3 Hall, D.T. “Practical Marine Electrical Knowledge”.
9.4 Kraal., E.G.R. “Basic Electrotechnology for Engineers”
9.5 McGeorge, H.D.. “Marine Electrical Equipment and Practice”.
9.6 Mondia, Carlitos. “Electro Technology 3”.
9.7 Pagarian. “Practical Electronics”.
E51 ELECTRO 3
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