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... bypass, but also leads to a more fundamental problem. In the prototype, the time is measured by discharging a large capacitor (Ctimer ) through a large resistor (200 MΩ). When this voltage drops below a certain value, the timer block deactivates T1 . The used resistor in the I3T50 technology does no ...
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An Introduction to BJT
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... More about Transistor Regions Cutoff: In this region, IB = 0 and VCE = VCC. That is, both the baseEmitter and the basecollector junctions are reversed biased. Under this condition, there is a very small amount of collector leakage current ICE0 due mainly to thermally produced carriers. It is usuall ...
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... reverse current flows temporarily through the MOSFET that is on. This current is sourced from any load capacitance and from the second supply through the body diode of the other MOSFET. The LTC4355 quickly responds to this condition, turning off the MOSFET in about 500ns. This fast turn-off prevents ...
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... diaphragm and strikes a plate capacitor in such a way that it does not directly fall on the plates. This prevents falsification of the measurement results due to the photoeffect at the capacitor plates. The x-rays ionize a part of the gas volume in the capacitor. When we apply a voltage UC to the ca ...
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... curves. The classical approach for isolating this inductive contribution is to use an extra, contactless voltage loop in the measurement circuit, as explained in [3], [4]. In order to simplify this correction scheme, it is also possible to use a linearly ramping current source, in which case the ind ...
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175 NEW IMPROVED TECHNIQUE FOR MOS INTERFACE STATES

... technology, however require smaller devices, sharper transitions and higher number of preparation steps. Narrower transitions require sharper doping profiles and subsequently lower temperatures during the preparation processes. The study of deep centre in semiconductor and the interface states prope ...
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P–n diode



This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.
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