AP6502A Description Pin Assignments
... When the HS MOSFET is on, inductor current starts to increase. The current sense amplifier senses and amplifies the inductor current. Since the current mode control is subject to sub-harmonic oscillations that peak at half the switching frequency, ramp slope compensation is utilized. This will help ...
... When the HS MOSFET is on, inductor current starts to increase. The current sense amplifier senses and amplifies the inductor current. Since the current mode control is subject to sub-harmonic oscillations that peak at half the switching frequency, ramp slope compensation is utilized. This will help ...
Input bias current of a chopper amplifier
... However, despite numerous advantages of the chopper, the switching technique shows some drawbacks that should be taken into consideration for new design. The TSZ121 is a chopper amplifier with an input offset voltage max of 5 µV at 25 °C. Due to its switching mode, some injection charge appears on t ...
... However, despite numerous advantages of the chopper, the switching technique shows some drawbacks that should be taken into consideration for new design. The TSZ121 is a chopper amplifier with an input offset voltage max of 5 µV at 25 °C. Due to its switching mode, some injection charge appears on t ...
How To Select Transient Voltage Suppressors
... adequate protection. However Microsemi does offer a series of custom modules involving TVS arrays to fit individual requirements with up to 90 kW of PPP or higher. Like any of the silicon p-n junction TVSs, these larger TVS designs also do not have wear-out mechanisms as do other high-powersuppressi ...
... adequate protection. However Microsemi does offer a series of custom modules involving TVS arrays to fit individual requirements with up to 90 kW of PPP or higher. Like any of the silicon p-n junction TVSs, these larger TVS designs also do not have wear-out mechanisms as do other high-powersuppressi ...
R2 Series) DDTCxxxxLP (R1 Features
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
Electronic Devices and Circuit Theory
... Upper Saddle River, New Jersey 07458 • All Rights Reserved ...
... Upper Saddle River, New Jersey 07458 • All Rights Reserved ...
Paper 5a.3_publicati..
... that uses the small signal calculated impedance at the gate of the FET to identify the stability of the circuit. This impedance is calculated using an injected small signal perturbation current source in the presence of the large signal drive. This impedance is equivalent to a closed loop linear sys ...
... that uses the small signal calculated impedance at the gate of the FET to identify the stability of the circuit. This impedance is calculated using an injected small signal perturbation current source in the presence of the large signal drive. This impedance is equivalent to a closed loop linear sys ...
AN5084, Hardware Design Guidelines for S12ZVL
... modules, including the voltage regulator (VREG) and a Local Interconnect Network (LIN) physical layer. The MC9S12ZVL-Family includes error correction code (ECC) on RAM, FLASH, and EEPROM for diagnostic or data storage, a fast analog-to-digital converter (ADC) and a frequency modulated phase locked l ...
... modules, including the voltage regulator (VREG) and a Local Interconnect Network (LIN) physical layer. The MC9S12ZVL-Family includes error correction code (ECC) on RAM, FLASH, and EEPROM for diagnostic or data storage, a fast analog-to-digital converter (ADC) and a frequency modulated phase locked l ...
SZA-5044(Z) 4.9GHz to 5.9GHz 5V POWER AMPLIFIER Features Product Description
... Notes: Pins 1, 3, 5, 9, 11, 15, and 17 are unwired (N/C) inside the package. Refer to page 2 for detailed pin descriptions. Some of these pins are wired to adjacent pins or grounded as shown in the application circuit. This is to maintain consistence with the evaluation board layout shown below. It ...
... Notes: Pins 1, 3, 5, 9, 11, 15, and 17 are unwired (N/C) inside the package. Refer to page 2 for detailed pin descriptions. Some of these pins are wired to adjacent pins or grounded as shown in the application circuit. This is to maintain consistence with the evaluation board layout shown below. It ...
AP1501A
... This data was taken with the circuit operating as a buck switching regulator with all components mounted on a PC board to simulate the junction temperature under actual operating conditions. This curve can be used for a quick check for the approximate junction temperature for various conditions, but ...
... This data was taken with the circuit operating as a buck switching regulator with all components mounted on a PC board to simulate the junction temperature under actual operating conditions. This curve can be used for a quick check for the approximate junction temperature for various conditions, but ...
FDMS3664S PowerTrench Power Stage
... 4. The PowerTrench® Technology MOSFETs used in the Power Stage are effective at minimizing phase node ringing. It allows the part to operate well within the breakdown voltage limits. This eliminates the need to have an external snubber circuit in most cases. If the designer chooses to use an RC snub ...
... 4. The PowerTrench® Technology MOSFETs used in the Power Stage are effective at minimizing phase node ringing. It allows the part to operate well within the breakdown voltage limits. This eliminates the need to have an external snubber circuit in most cases. If the designer chooses to use an RC snub ...
FSQ0370RNA, FSQ0370RLA Green Mode Fairchild Power Switch (FPS™) FSQ0370RNA / FSQ0370RLA
... the SenseFET when the maximum PWM duty cycle is attained. If the output consumes more than this maximum power, the output voltage (VO) decreases below its nominal voltage. This reduces the current through the optocoupler LED, which also reduces the optocoupler transistor current, thus increasing the ...
... the SenseFET when the maximum PWM duty cycle is attained. If the output consumes more than this maximum power, the output voltage (VO) decreases below its nominal voltage. This reduces the current through the optocoupler LED, which also reduces the optocoupler transistor current, thus increasing the ...
AP5725 WHITE LED STEP-UP CONVERTER Description
... applications. The forward voltage drop of a Schottky diode represents the conduction losses in the diode, while the diode capacitance (CT or CD) represents the switching losses. For diode selection, both forward voltage drop and diode capacitance need to be considered. Schottky diodes with higher cu ...
... applications. The forward voltage drop of a Schottky diode represents the conduction losses in the diode, while the diode capacitance (CT or CD) represents the switching losses. For diode selection, both forward voltage drop and diode capacitance need to be considered. Schottky diodes with higher cu ...
Multilayer Technology Varistor Plus Term Sym bol
... The jum p start transient results from the tem porary application of an overvoltage in excess of the rated battery voltage. The circuit pow er supply m ay be subjected to a tem porary over-voltage condition due to the voltage regulation failing or it m ay be deliberately generated w hen it becom es ...
... The jum p start transient results from the tem porary application of an overvoltage in excess of the rated battery voltage. The circuit pow er supply m ay be subjected to a tem porary over-voltage condition due to the voltage regulation failing or it m ay be deliberately generated w hen it becom es ...
Synthesis of Log-Domain Filters from First
... system. The equations governing the internal nonlinearity of the system are generally tractable, leading to complete solutions which do not require separate DC and transient analyses. Substantial progress has been made in simplifying the processes of synthesis and analysis [3±8] by recognizing that ...
... system. The equations governing the internal nonlinearity of the system are generally tractable, leading to complete solutions which do not require separate DC and transient analyses. Substantial progress has been made in simplifying the processes of synthesis and analysis [3±8] by recognizing that ...
A single molecule rectifier with strong push-pull coupling
... energies are denoted by EFL and EFR, respectively. These energies are related via EFL − EFR = eV, where V is the left-right 共bias兲 voltage and e the electron charge 共e ⬎ 0兲. Deep levels are narrow while the level closer to the top of the tunneling barriers is broad. The narrow levels give rise to sh ...
... energies are denoted by EFL and EFR, respectively. These energies are related via EFL − EFR = eV, where V is the left-right 共bias兲 voltage and e the electron charge 共e ⬎ 0兲. Deep levels are narrow while the level closer to the top of the tunneling barriers is broad. The narrow levels give rise to sh ...
Low-Noise, 900kHz, RRIO, Precision Op Amp Zero
... normal operation is approximately 150pA. In over-driven conditions, the bias current can increase significantly (see Figure 24). The most common cause of an over-driven condition occurs when the op amp is outside of the linear range of operation. When the output of the op amp is driven to one of the ...
... normal operation is approximately 150pA. In over-driven conditions, the bias current can increase significantly (see Figure 24). The most common cause of an over-driven condition occurs when the op amp is outside of the linear range of operation. When the output of the op amp is driven to one of the ...
FDMS3669S PowerTrench Power Stage
... 4. The PowerTrench® Technology MOSFETs used in the Power Stage are effective at minimizing phase node ringing. It allows the part to operate well within the breakdown voltage limits. This eliminates the need to have an external snubber circuit in most cases. If the designer chooses to use an RC snub ...
... 4. The PowerTrench® Technology MOSFETs used in the Power Stage are effective at minimizing phase node ringing. It allows the part to operate well within the breakdown voltage limits. This eliminates the need to have an external snubber circuit in most cases. If the designer chooses to use an RC snub ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.