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Lecture #0 - Cairo University Scholars
... The Personal Computer (PC) boom of the last century has become the Smartphone, Entertainment Console, Notebook and Tablet explosion in the new millennium. Largest companies in that industry are: Intel with $50 billion revenue in 2012. Samsung Electronics ranked second. Qualcomm, Texas instruments, T ...
... The Personal Computer (PC) boom of the last century has become the Smartphone, Entertainment Console, Notebook and Tablet explosion in the new millennium. Largest companies in that industry are: Intel with $50 billion revenue in 2012. Samsung Electronics ranked second. Qualcomm, Texas instruments, T ...
Automotive Circuit Protection using Littelfuse Automotive TVS Diodes
... without dissipating any load dump energy. As a result, all load dump energy will be dissipated on the lower clamp voltage TVS diode. However, this waveform or surge energy level is now actually a ISO)16750-2 5a ( without centralized load dump protection ) but not that of from 5b. Thus automotive ele ...
... without dissipating any load dump energy. As a result, all load dump energy will be dissipated on the lower clamp voltage TVS diode. However, this waveform or surge energy level is now actually a ISO)16750-2 5a ( without centralized load dump protection ) but not that of from 5b. Thus automotive ele ...
MAX6698 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor General Description
... channel and a programmable overtemperature threshold for channels 1, 4, 5, and 6 (see Figure 1). Communication with the MAX6698 is achieved through the SMBus serial interface and a dedicated alert (ALERT) pin. The alarm outputs, OVERT and ALERT, assert if the software-programmed temperature threshol ...
... channel and a programmable overtemperature threshold for channels 1, 4, 5, and 6 (see Figure 1). Communication with the MAX6698 is achieved through the SMBus serial interface and a dedicated alert (ALERT) pin. The alarm outputs, OVERT and ALERT, assert if the software-programmed temperature threshol ...
FET Biasing - Dr Ali El
... 3. Where the line intersects the transfer curve is the Q-point. Use the ID at the Q-point to solve for the other variables in the voltage-divider bias circuit. These are the same calculations as used by a JFET circuit. ...
... 3. Where the line intersects the transfer curve is the Q-point. Use the ID at the Q-point to solve for the other variables in the voltage-divider bias circuit. These are the same calculations as used by a JFET circuit. ...
Metal-layer capacitors in the 65nm CMOS process and the
... for investigating gate leakage issue of thin-oxide MOS capacitor, the test devices of stand-alone PMOS and NMOS capacitors were also included in the test chip. Moreover, to investigate the impact of gate leakage issue in RC-based ESD-detection circuit, power-rail ESD clamp circuits with different ca ...
... for investigating gate leakage issue of thin-oxide MOS capacitor, the test devices of stand-alone PMOS and NMOS capacitors were also included in the test chip. Moreover, to investigate the impact of gate leakage issue in RC-based ESD-detection circuit, power-rail ESD clamp circuits with different ca ...
UCC29950 CCM PFC and LLC Combo Controller
... The SUFG and SUFS are the control pins for an external start-up depletion mode FET. The use of a switched device here eliminates the static power dissipation in a conventional resistive start-up approach where a drop resistor from the rectified AC line to VCC is typically used. As a result standby p ...
... The SUFG and SUFS are the control pins for an external start-up depletion mode FET. The use of a switched device here eliminates the static power dissipation in a conventional resistive start-up approach where a drop resistor from the rectified AC line to VCC is typically used. As a result standby p ...
SIMULATIONS AND PRACTICAL DESIGNS OF FLYBACK
... waveforms often need to be attenuated by dampers. The output voltage now includes the capacitor ESR contribution, an effect of the current discontinuity at the switch opening. The reflected voltage includes the diode forward drop, as it sums up with the output voltage on the secondary side upper ter ...
... waveforms often need to be attenuated by dampers. The output voltage now includes the capacitor ESR contribution, an effect of the current discontinuity at the switch opening. The reflected voltage includes the diode forward drop, as it sums up with the output voltage on the secondary side upper ter ...
Importance of Oxides in Carbon/Molecule/Metal Molecular Junctions
... As noted, the lowest backpressure employed 共2.1 ⫻ 10−7 Torr兲 yielded a Ti deposit that contained significant oxide, making it difficult to evaluate junctions containing only metallic Ti. To circumvent this problem, copper was substituted for Ti to reduce the tendency of the top contact metal to oxid ...
... As noted, the lowest backpressure employed 共2.1 ⫻ 10−7 Torr兲 yielded a Ti deposit that contained significant oxide, making it difficult to evaluate junctions containing only metallic Ti. To circumvent this problem, copper was substituted for Ti to reduce the tendency of the top contact metal to oxid ...
AN11176 Automotive qualified ESD protection for LVDS
... The rise time of the current waveform is different because the series resistor is 1.5 k in the HBM instead of 330 in the IEC 610004-2 model. While the specified rise time for the IEC 610004-2-compliant current waveform is from 0.7 ns to 1 ns, the HBM waveform has a specified rise time below 10 ns ...
... The rise time of the current waveform is different because the series resistor is 1.5 k in the HBM instead of 330 in the IEC 610004-2 model. While the specified rise time for the IEC 610004-2-compliant current waveform is from 0.7 ns to 1 ns, the HBM waveform has a specified rise time below 10 ns ...
PD166017T1F Data Sheet INTELLIGENT POWER DEVICE
... In case of a reverse voltage is applied to the device, the N-Ch MOSFET will turn on only if a reverse current can flow from IN pin through RCC and if |VCC – VIN| voltage is in range of 8 V (TYP). In above conditions, power dissipation in the driver is generated by N-Ch Mosfet as well as RCC and RIS0 ...
... In case of a reverse voltage is applied to the device, the N-Ch MOSFET will turn on only if a reverse current can flow from IN pin through RCC and if |VCC – VIN| voltage is in range of 8 V (TYP). In above conditions, power dissipation in the driver is generated by N-Ch Mosfet as well as RCC and RIS0 ...
Gene Dosage and Complementation Analysis of the Shaker Locus in
... the value found in Oregon R controls (filled circles) or in C(I)A controls (open triangles). The diagonal line is the relation expected if r were proportional to the dosage of Sh+. Error bars are SDS. We tried to reduce this error by measuring the approximate slope conductance from the peak current- ...
... the value found in Oregon R controls (filled circles) or in C(I)A controls (open triangles). The diagonal line is the relation expected if r were proportional to the dosage of Sh+. Error bars are SDS. We tried to reduce this error by measuring the approximate slope conductance from the peak current- ...
BDTIC www.BDTIC.com/infineon
... Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiven ...
... Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiven ...
Aalborg Universitet Real Time Monitoring and Wear Out of Power Modules
... Power electronic devices have a wide range of applications from very low to high power at constantly varying load conditions. Irrespective of the harsh operating loads, including both internal and external, an improvement in a performance such as efficiency, power density, reliability and cost for p ...
... Power electronic devices have a wide range of applications from very low to high power at constantly varying load conditions. Irrespective of the harsh operating loads, including both internal and external, an improvement in a performance such as efficiency, power density, reliability and cost for p ...
Chapter 8 Prototype - DTUsat-1
... An electrodynamic tether consists of a conducting wire, dragged through a magnetic field. In a prograde* earth orbit, this will induce a voltage across the tether, with positive at the high end, and thus try to drive a current up the tether. Ejecting electrons to the surrounding plasma at the low en ...
... An electrodynamic tether consists of a conducting wire, dragged through a magnetic field. In a prograde* earth orbit, this will induce a voltage across the tether, with positive at the high end, and thus try to drive a current up the tether. Ejecting electrons to the surrounding plasma at the low en ...
Dual, 256-Tap, Volatile, Low-Voltage, Linear Taper Digital Potentiometer MAX5392 General Description Features
... The potentiometers are programmable independently of each other. The MAX5392 features an I2C interface. ...
... The potentiometers are programmable independently of each other. The MAX5392 features an I2C interface. ...
Full-Text PDF
... renewable sources will be low and must be stepped up by using a DC-DC converter for photovoltaic applications. 2 K diodes and 2 K capacitors along with two semiconductor control switch are used in the K-stage proposed converter to obtain an output voltage which is (K + 1) times the input voltage. Th ...
... renewable sources will be low and must be stepped up by using a DC-DC converter for photovoltaic applications. 2 K diodes and 2 K capacitors along with two semiconductor control switch are used in the K-stage proposed converter to obtain an output voltage which is (K + 1) times the input voltage. Th ...
SFH618A, SFH6186
... The SFH618A (DIP) and SFH6186 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD pack ...
... The SFH618A (DIP) and SFH6186 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD pack ...
AN2030
... Generally, a brushless dc motor is driven by a three-phase inverter with what is called six-step commutation. The conducting interval for each phase is 120° by electrical angle. Therefore, only two phases conduct current at any time, leaving the third phase floating. This opens a window to detect th ...
... Generally, a brushless dc motor is driven by a three-phase inverter with what is called six-step commutation. The conducting interval for each phase is 120° by electrical angle. Therefore, only two phases conduct current at any time, leaving the third phase floating. This opens a window to detect th ...
LM43603-Q1 SIMPLE SWITCHER 3.5-V to 36-V, 3
... The LM43603-Q1 SIMPLE SWITCHER® regulator is an easy-to-use synchronous step-down DC-DC converter capable of driving up to 3 A of load current from an input voltage ranging from 3.5 V to 36 V (42 V absolute maximum). The LM43603-Q1 provides exceptional efficiency, output accuracy, and dropout voltag ...
... The LM43603-Q1 SIMPLE SWITCHER® regulator is an easy-to-use synchronous step-down DC-DC converter capable of driving up to 3 A of load current from an input voltage ranging from 3.5 V to 36 V (42 V absolute maximum). The LM43603-Q1 provides exceptional efficiency, output accuracy, and dropout voltag ...
P–n diode
![](https://commons.wikimedia.org/wiki/Special:FilePath/Two_diode_structures.png?width=300)
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.