1. General Description of Aluminum Electrolytic Capacitors
... electrolyte, and an aluminum oxide film, which acts as the dielectric, formed on the anode foil surface. A very thin oxide film formed by electrolytic oxidation (formation) offers superior dielectric constant and has rectifying properties. When in contact with an electrolyte, the oxide film possesse ...
... electrolyte, and an aluminum oxide film, which acts as the dielectric, formed on the anode foil surface. A very thin oxide film formed by electrolytic oxidation (formation) offers superior dielectric constant and has rectifying properties. When in contact with an electrolyte, the oxide film possesse ...
Physics Based Virtual Source Compact Model of
... Figure 4.14 Log scale of drain current showing the subthreshold slope .............................................. 44 Figure 4.16 Above-threshold drain current fitting of device 1 ............................................................ 48 Figure 4.17 Above-threshold drain current fitting of d ...
... Figure 4.14 Log scale of drain current showing the subthreshold slope .............................................. 44 Figure 4.16 Above-threshold drain current fitting of device 1 ............................................................ 48 Figure 4.17 Above-threshold drain current fitting of d ...
Insulated Gate Bipolar Transistor (IGBT)
... Fig. 7.1: Vertical cross section of an IGBT cell. The major difference with the corresponding MOSFET cell structure lies in the addition of a p+ injecting layer. This layer forms a pn junction with the drain layer and injects minority carriers into it. The n type drain layer itself may have two diff ...
... Fig. 7.1: Vertical cross section of an IGBT cell. The major difference with the corresponding MOSFET cell structure lies in the addition of a p+ injecting layer. This layer forms a pn junction with the drain layer and injects minority carriers into it. The n type drain layer itself may have two diff ...
Transfer Function, Bias, and Small Signal Model
... Find the iv characteristics of the elements for the signal (which can be different than their characteristics equation for bias). This will lead to different circuit configurations for bias versus signal ...
... Find the iv characteristics of the elements for the signal (which can be different than their characteristics equation for bias). This will lead to different circuit configurations for bias versus signal ...
Application Note for an LLC Resonant Converter Using
... The HR1000 is a controller designed specifically for the resonant half-bridge topology. It has two output channels of complementary driving signals that run at 50% duty cycle. An integrated bootstrap diode simplifies the external driving circuit for the high-side switch. A fixed dead-time inserted b ...
... The HR1000 is a controller designed specifically for the resonant half-bridge topology. It has two output channels of complementary driving signals that run at 50% duty cycle. An integrated bootstrap diode simplifies the external driving circuit for the high-side switch. A fixed dead-time inserted b ...
Model 361 PointMAN Service Tool
... by the quadrature stator winding (140-150 VAC). The regulator then maintains the generator output nearly constant (within a few volts of 120 VAC) under conditions of varying load. It does this by sensing the 120 volts (PIN 2) and constantly adjusting the DC field (rotor) voltage (PINS 9 and 10) up ...
... by the quadrature stator winding (140-150 VAC). The regulator then maintains the generator output nearly constant (within a few volts of 120 VAC) under conditions of varying load. It does this by sensing the 120 volts (PIN 2) and constantly adjusting the DC field (rotor) voltage (PINS 9 and 10) up ...
Fast Acting Fuse for Semicon- ductor Protection
... several thousands of mF, fed from a DC source. The inductance in the inverter leg can be less than 1mH. In case of semiconductors shoot through the capacitor bank will discharge thru the short circuit path and generate a large fault current that will be cleared by fuses. Alternative locations for th ...
... several thousands of mF, fed from a DC source. The inductance in the inverter leg can be less than 1mH. In case of semiconductors shoot through the capacitor bank will discharge thru the short circuit path and generate a large fault current that will be cleared by fuses. Alternative locations for th ...
TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
... In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easil ...
... In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easil ...
Application of Microwave GaAs FET`s
... III-V); one of the semiconductor com pounds which has been researched continually since the latter half of the 1960’s. The electron mobility of gallium arsenide is five to seven times that of silicon. Gallium arsenide crystal technology was used to produce the GUNN, varactor and Schottky diodes, and ...
... III-V); one of the semiconductor com pounds which has been researched continually since the latter half of the 1960’s. The electron mobility of gallium arsenide is five to seven times that of silicon. Gallium arsenide crystal technology was used to produce the GUNN, varactor and Schottky diodes, and ...
ADP1762 (Rev. A)
... Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operat ...
... Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operat ...
Characterization of atomic layer deposition HfO2, Al2O3
... highest allowable processing temperature can be 400 C or higher, which typically results in higher quality deposited capacitor dielectric films. In GaAs technology, only few dielectrics are available and satisfy the electrical requirements to be used as MIM capacitor dielectric, including Si3N4, S ...
... highest allowable processing temperature can be 400 C or higher, which typically results in higher quality deposited capacitor dielectric films. In GaAs technology, only few dielectrics are available and satisfy the electrical requirements to be used as MIM capacitor dielectric, including Si3N4, S ...
LinCMOS Precision Quad Operational
... In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easil ...
... In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easil ...
Implementation and Applications of Current
... to Power Supply Rail and Current Out >100µA You can build a programmable current source of virtually any value using two resistors, an op amp, and a 100µA current source as a reference. The current source shown in Figure 12 can be programmed to any value above the 100µA reference current. It has com ...
... to Power Supply Rail and Current Out >100µA You can build a programmable current source of virtually any value using two resistors, an op amp, and a 100µA current source as a reference. The current source shown in Figure 12 can be programmed to any value above the 100µA reference current. It has com ...
ZLDO1117
... normal load conditions however, the maximum junction temperature rating of +125°C must not be exceeded. It is important to give careful consideration to all sources of thermal resistance from junction to ambient. For the SOT223-3L and TO252-3L packages, which are designed to be surface mounted, addi ...
... normal load conditions however, the maximum junction temperature rating of +125°C must not be exceeded. It is important to give careful consideration to all sources of thermal resistance from junction to ambient. For the SOT223-3L and TO252-3L packages, which are designed to be surface mounted, addi ...
TSAL6100 High Power Infrared Emitting Diode, 940 nm
... operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Ex ...
... operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Ex ...
MAX1606 28V Internal Switch LCD Bias Supply with True Shutdown General Description
... Smaller inductance values typically offer smaller physical size for a given series resistance or saturation current. Circuits using larger inductance values may start up at lower input voltages and exhibit less ripple, but also provide reduced output power. This occurs when the inductance is suffici ...
... Smaller inductance values typically offer smaller physical size for a given series resistance or saturation current. Circuits using larger inductance values may start up at lower input voltages and exhibit less ripple, but also provide reduced output power. This occurs when the inductance is suffici ...
TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
... In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily ...
... In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily ...
BDTIC www.BDTIC.com/infineon RF and Protection Devices BGB741L7ESD and BGS12AL7
... configuration, as shown in Figure 2 offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 21 dBm, resulting in li ...
... configuration, as shown in Figure 2 offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 21 dBm, resulting in li ...
ZXRE060 0.6V ADJUSTABLE PRECISION SHUNT REGULATOR Description
... conventional references. There is only an output leakage current which is a maximum of 1µA. Nevertheless, it is necessary to determine an IKA(min) to ensure that the device operates within its linear range at all times. IKA(min) ≥ 10µA should be adequate for this. Determine R3 from R3 = VIN − ( VOUT ...
... conventional references. There is only an output leakage current which is a maximum of 1µA. Nevertheless, it is necessary to determine an IKA(min) to ensure that the device operates within its linear range at all times. IKA(min) ≥ 10µA should be adequate for this. Determine R3 from R3 = VIN − ( VOUT ...
ZXLD1366 Description Pin Assignments
... ground but should not be used as the 0V (GND) current path. It can be left floating but must not be connected to any other voltage other than 0V. ...
... ground but should not be used as the 0V (GND) current path. It can be left floating but must not be connected to any other voltage other than 0V. ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.