• Study Resource
  • Explore
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
PR 099-2013/ROHM - ROHM Ad/PR Materials
PR 099-2013/ROHM - ROHM Ad/PR Materials

Bipolar Transistor -12V -1A VCE(sat);-240mV(max.) PNP Single CPH3
Bipolar Transistor -12V -1A VCE(sat);-240mV(max.) PNP Single CPH3

... customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures tha ...
12A02MH 数据资料DataSheet下载
12A02MH 数据资料DataSheet下载

2STBN15D100
2STBN15D100

EMI2121 数据资料DataSheet下载
EMI2121 数据资料DataSheet下载

... Transmission Line Pulse (TLP) provides current versus voltage (I-V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 8. TLP I-V curves of ESD protection devices accurat ...
BD439/ 441 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
BD439/ 441 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ...
2D Transient
2D Transient

... Initial Current: used if motor is running at t=0 Resistance: DC resistance of the winding or additional external resistance, f (S, T, P) Inductance: End turn or additional external inductance, f (S, T, P) Capacitance: External capacitance, such as a starting capacitor in a single phase induction mot ...
Unique features of the proposed ZCS scheme - UIC
Unique features of the proposed ZCS scheme - UIC

Varistors SMOV25S Datasheet
Varistors SMOV25S Datasheet

Electrical Energy
Electrical Energy

... seem inconveniently large, but they’re not very relevant to everyday life because all we normally measure is the excess of one type of charge over the other. The amount of excess charge that readily builds up on a person’s hair is less than a microcoulomb, that is, 0.000001 C. (“Micro” is the metric ...
TPS2490, Reverse Input Voltage Block
TPS2490, Reverse Input Voltage Block

Laboratory Experiment 2
Laboratory Experiment 2

Experiment 7 - Bipolar Junction Transistor Characteristics
Experiment 7 - Bipolar Junction Transistor Characteristics

... careful plot of IC vs. VCE. You will need to take many points of IB and IC at low VCE due to the steep slope of the curve. Note VBE and VBC at saturation. Draw the simplified Ebers-Moll model for the BJT in the saturation region. From this plot, find the early voltage VA. Does the Ebers-Moll model p ...
Bip Transistor 50V, 2A PNP MP
Bip Transistor 50V, 2A PNP MP

... customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures tha ...
Here we`ll find the initial values of the inductor current and voltage
Here we`ll find the initial values of the inductor current and voltage

... This means that the circuitry to the right disappears. We are left with a circuit in DC steady state. The inductor can be replaced with a short circuit. The voltage across a piece of wire is 0, so that’s the initial voltage. This is vl(0-) because the voltage might change after t=0. Also note that c ...
1.5SMC6.8AT3 - uri=media.digikey
1.5SMC6.8AT3 - uri=media.digikey

... without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims ...
Electricity Notes
Electricity Notes

1500 Watt SMC Transient Voltage Suppressor, 10 V Unidir
1500 Watt SMC Transient Voltage Suppressor, 10 V Unidir

... to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, ...
1500 Watt MOSORB® Transient Voltage Suppressor, 9.1 V Unidir
1500 Watt MOSORB® Transient Voltage Suppressor, 9.1 V Unidir

A state-of-the-art 2.3GHz Pre-amplifier
A state-of-the-art 2.3GHz Pre-amplifier

... Agilent call the device an Enhancement-mode Pseudomorphic High Electron Mobility Transistor, or EPHEMT. HEMTs have been around for some time now, and will be familiar to anybody who has built a microwave low noise amplifier (LNA). 'Pseudomorphic' is a development of the basic HEMT, and refers to the ...
Resident Physics Lectures
Resident Physics Lectures

Qualitative Description 5.0.2 Basic MOS Transistor
Qualitative Description 5.0.2 Basic MOS Transistor

... Understanding MOS transistor qualitatively is easy. We look at the example from above and apply some source-drain voltage USD in either polarity, but no gate voltage yet. What we have under these conditions is A n-type Si substrate with a certain equilibrium density of electrons ne(UG = 0), or ne(0) ...
MEEPP 201 Power Electronic System Control -set1
MEEPP 201 Power Electronic System Control -set1

... 6. (a). The input voltage to the forward converter is 150V. The switching frequency is 95 kHz and duty cycle is 50%. The converter transformer has 100 turns each on the primary and feedback. Find the time duration in one switching period when the feedback diode is ON. Find the maximum voltage that c ...
Boosting the Current Limit of Current Limiting Diodes
Boosting the Current Limit of Current Limiting Diodes

Multi-Voltage Relay Modules
Multi-Voltage Relay Modules

< 1 ... 148 149 150 151 152 153 154 155 156 ... 200 >

P–n diode



This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report