• Study Resource
  • Explore
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
Rui Bai
Rui Bai

... In advanced integrated circuit design, it requires an accurate on-chip band gap reference for optimal system performance. Precision band gap voltage references are an essential building block in analog integrated circuits design. Band gap reference circuit produces a stable reference voltage, which ...
Characteristics Of Separately Excited DC Generator
Characteristics Of Separately Excited DC Generator

... internal characteristic can be easily transmitted to Eg vs. IL by subtracting the correct value of If from Ia. ...
Semiconductor
Semiconductor

... 由基本原理說明可知 V=20m ×150+0.7=3.7V。 ...
Qualitative Description Basic MOS Transistor
Qualitative Description Basic MOS Transistor

... Understanding MOS transistor qualitatively is easy. We look at the example from above and apply some source-drain voltage USD in either polarity, but no gate voltage yet. What we have under these conditions is A n-type Si substrate with a certain equilibrium density of electrons ne(UG = 0), or ne(0) ...
File - Go ELECTRONICS
File - Go ELECTRONICS

... The rectifier voltage waveform at “A” .The dotted line in this figure indicates the battery voltage. When voltage at point A is greater than the battery voltage the SCR1 is forward biased and can conduct if the gate junction is a forward biased. Thus SCR1 conducts from P to R as shown in figure and ...
Wind Energy System
Wind Energy System

... Wind does not cause green house gases or other pollutants Although wind turbines can be very tall each takes up only a small plot of land Excellent source for remote areas not connected to a grid Wind turbines have a role to play in both the developed and third world Available in a range of sizes me ...
AM PEAK DETECTOR
AM PEAK DETECTOR

... and the carrier is the modulating signal frequency (audio). The audio is separated from the composite waveform with a simple lowpass filter. The amplitude-modulated signal is generated by the circuit of Figure 3. The schematic diagram for the peak detector circuit used in this section is shown in Fi ...
Yr 9 – Voltage and Current in series circuits
Yr 9 – Voltage and Current in series circuits

fast pulser for high-altitude ignition research
fast pulser for high-altitude ignition research

... where μ0 is the permeability of free space, l is the average circumference of the core, and C0 is the capacitance per stage. In this equation, we assume that the load is a capacitor with a capacitance equal to the upstream capacitance; this gives an effective capacitance that is half that of a singl ...
Supercapacitor
Supercapacitor

KSE 13003T NPN Silicon Transistor Absolute Maximum Ratings
KSE 13003T NPN Silicon Transistor Absolute Maximum Ratings

... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ...
08c_Picture_This
08c_Picture_This

... that the applied voltages are correct that the circuit is not powered that the circuit is grounded that the circuit is operating at the frequency ...
Large-Current Driving Applications
Large-Current Driving Applications

... can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party’s ...
Electrical Machines-I (PCEE 4203) Lesson 13
Electrical Machines-I (PCEE 4203) Lesson 13

... 2. As the load is increased, the current in armature conductors increases, so the effect of armature reaction increases and, therefore, field is weakened. Hence the induced emf also decreases, and terminal voltage falls. 3. Due to the above two factors terminal voltage decreases, this causes reducti ...
The basic theory of operation of the Simple Current Mirror (SCM) is
The basic theory of operation of the Simple Current Mirror (SCM) is

Examples #4 - ECE at Utah
Examples #4 - ECE at Utah

... Examples #4 3. Consider the differential amplifier specified in Problem 1 with G2 grounded and VG1= Vid. Let Vid be adjusted to the value that causes iD1=0.11mA and iD2=0.09mA. Find the corresponding values of VGS2, VS, VGS1, and hence Vid. What is the difference output voltage (VD2-VD1)? What is t ...
Semiconductors - schoolphysics
Semiconductors - schoolphysics

... In the intrinsic semiconductor the valence band is full once more, but the conduction band is empty at very low temperatures. However, the energy gap between the two bands is so very small that electrons can jump across it by the addition of thermal energy alone or even light energy of a suitable wa ...
1 - TI E2E Community
1 - TI E2E Community

LM78S40 Universal Switching Regulator Subsystem Universal General Description
LM78S40 Universal Switching Regulator Subsystem Universal General Description

... FIGURE 4. Pulse Width Modulated Step-Down Regulator (fOSC = 20 kHz) ...
Lab 3 Graphing Proc..
Lab 3 Graphing Proc..

Chapter 28.
Chapter 28.

... •Now imagine the neutral wire breaks •The person again can be electrocuted •The right solution: Add a third “ground” wire connected directly to ground •Normally no current will flow in this wire •If the hot wire touches the casing, it will trigger the fuse/circuit breaker and protect the person ...
Presentation
Presentation

PDF
PDF

KST290 7A PNP Epitaxial Silicon Transistor
KST290 7A PNP Epitaxial Silicon Transistor

... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ...
Common-Mode Feedback Circuits
Common-Mode Feedback Circuits

... Diagram same for p or n. If PMOS, then in n-well with p+ mask, NMOS in p-substrate with n+. ...
< 1 ... 152 153 154 155 156 157 158 159 160 ... 200 >

P–n diode



This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report