KST92/KST93 PNP Epitaxial Silicon Transistor KS T92/KST9
... Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor ...
... Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor ...
An Organic Electrochemical Transistor for Printed Sensors and Logic David Nilsson
... Conducting polymers entered the research field in late 70´s and efforts aimed at achieving printed electronics started a decade later. This thesis treats printable organic electrochemical transistors (OECT). Some conjugated polymers can be switched between a high conducting and a low conducting stat ...
... Conducting polymers entered the research field in late 70´s and efforts aimed at achieving printed electronics started a decade later. This thesis treats printable organic electrochemical transistors (OECT). Some conjugated polymers can be switched between a high conducting and a low conducting stat ...
SGA8543Z HIGH IP , MEDIUM POWER DISCRETE SiGe TRANSISTOR
... Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publicat ...
... Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publicat ...
UNIT I
... Full wave rectifier-contd… • When point A of the transformer is positive with respect to point C, diode D1 conducts in the forward direction as indicated by the arrows. • When point B is positive (in the negative half of the cycle) with respect to point C, diode D2 conducts in the forward direction ...
... Full wave rectifier-contd… • When point A of the transformer is positive with respect to point C, diode D1 conducts in the forward direction as indicated by the arrows. • When point B is positive (in the negative half of the cycle) with respect to point C, diode D2 conducts in the forward direction ...
SN74GTL2003 数据资料 dataSheet 下载
... The SN74GTL2003 provides eight NMOS pass transistors (Sn and Dn) with a common gate (GREF) and a reference transistor (SREF and DREF). The low ON-state resistance of the switch allows connections to be made with minimal propagation delay. With no direction control pin required, the device allows bid ...
... The SN74GTL2003 provides eight NMOS pass transistors (Sn and Dn) with a common gate (GREF) and a reference transistor (SREF and DREF). The low ON-state resistance of the switch allows connections to be made with minimal propagation delay. With no direction control pin required, the device allows bid ...
abulgheroni
... CCD sensor was used in the SLD experiments were an impact parameter resolution similar to the ILC required one was obtained. ...
... CCD sensor was used in the SLD experiments were an impact parameter resolution similar to the ILC required one was obtained. ...
ISSCC 2007 / SESSION 30 / BUILDING BLOCKS FOR HIGH
... broadband communication circuits. This paper focuses on the implementation of broadband amplifiers; the fundamental building blocks of high data-rate optical telecommunication systems in CMOS technology. Distributed amplification is widely used as a circuit topology for achieving a flat gain and goo ...
... broadband communication circuits. This paper focuses on the implementation of broadband amplifiers; the fundamental building blocks of high data-rate optical telecommunication systems in CMOS technology. Distributed amplification is widely used as a circuit topology for achieving a flat gain and goo ...
Proximity Sensors Inductive Full Metal Body Types EI, M8
... • Plug: M8 types: M8 and M12 plug M12, M 18 and M30 types: M 12 plug • Sensing distance: 1 to 15 mm • Supply voltage: 10 to 40 VDC • Output: Transistor NPN/PNP, normally open or closed • Protection: Short-circuit, reverse polarity and transients • LED-indication for output ON: M8, M18, M30: 1 point ...
... • Plug: M8 types: M8 and M12 plug M12, M 18 and M30 types: M 12 plug • Sensing distance: 1 to 15 mm • Supply voltage: 10 to 40 VDC • Output: Transistor NPN/PNP, normally open or closed • Protection: Short-circuit, reverse polarity and transients • LED-indication for output ON: M8, M18, M30: 1 point ...
No.17 Single-transistor Reflex Radio
... The tuning circuit is formed of a coil (a tuning coil is similar to an antenna coil) and capacitor connected to each other in parallel. Take a look at the figures below. Consider a case in which electric charge is stored in the capacitor. (1) The capacitor discharges electricity in the direction of ...
... The tuning circuit is formed of a coil (a tuning coil is similar to an antenna coil) and capacitor connected to each other in parallel. Take a look at the figures below. Consider a case in which electric charge is stored in the capacitor. (1) The capacitor discharges electricity in the direction of ...
Chapter 5_notes_Fall 2012
... lamp, human ear, loud speaker, etc. Within the limits of given DC power supplies, the output stage should provide maximum amount of signal power to the load without large dissipation of electrical signal energy as heat. In a voltage amplifier system, the output resistance should be very low. Further ...
... lamp, human ear, loud speaker, etc. Within the limits of given DC power supplies, the output stage should provide maximum amount of signal power to the load without large dissipation of electrical signal energy as heat. In a voltage amplifier system, the output resistance should be very low. Further ...
EC_-_I_IMPORTANT_QUESTIONS_86623 - e
... 3. Write the equation for small signal condition that must be satisfied for linear amplifiers. 4. Draw the small signal equivalent circuit common source NMOS. 5. What is another name for common drain amplifier? 6. Draw the source follower amplifier circuit. 7. List the applications of MOSFET amplifi ...
... 3. Write the equation for small signal condition that must be satisfied for linear amplifiers. 4. Draw the small signal equivalent circuit common source NMOS. 5. What is another name for common drain amplifier? 6. Draw the source follower amplifier circuit. 7. List the applications of MOSFET amplifi ...
EC331.Sheet1 - Arab Academy for Science, Technology
... 13. What unit is used to represent the level of a diode forward current IF? a) pA b) nA c) A d) mA 14. Which of the following ratings is true? a) Si diodes have higher PIV and narrower temperature ranges than Ge diodes. b) Si diodes have higher PIV and wider temperature ranges than Ge diodes. c) Si ...
... 13. What unit is used to represent the level of a diode forward current IF? a) pA b) nA c) A d) mA 14. Which of the following ratings is true? a) Si diodes have higher PIV and narrower temperature ranges than Ge diodes. b) Si diodes have higher PIV and wider temperature ranges than Ge diodes. c) Si ...
Project 1: Basic Testing Circuit
... ‘pumps water’ from one bucket to the other. When one bucket becomes full, and the other empty, we say that the capacitor is “fully charged”. Before the pumping began, the capacitor was said to be “discharged”. The time taken to charge depends on the size of the buckets. This is shown by the size of ...
... ‘pumps water’ from one bucket to the other. When one bucket becomes full, and the other empty, we say that the capacitor is “fully charged”. Before the pumping began, the capacitor was said to be “discharged”. The time taken to charge depends on the size of the buckets. This is shown by the size of ...
PDF
... because of mobility degradation and severe source/drain (S/D) resistance [4], [6]. High linearity is even more difficult to achieve at low bias, which is crucial for portable RF applications. Only a few solutions have been proposed, such as operation at the quantum capacitance limit [7] and variant ...
... because of mobility degradation and severe source/drain (S/D) resistance [4], [6]. High linearity is even more difficult to achieve at low bias, which is crucial for portable RF applications. Only a few solutions have been proposed, such as operation at the quantum capacitance limit [7] and variant ...
3355LectureSet06v09
... arriving from the emitter (where they were majority carriers). We think of them being injected by the emitter into the base, where a large proportion of them are swept into the collector. Now, we have "lots and lots" of charge carriers moving. What determines how many of these charge carriers are mo ...
... arriving from the emitter (where they were majority carriers). We think of them being injected by the emitter into the base, where a large proportion of them are swept into the collector. Now, we have "lots and lots" of charge carriers moving. What determines how many of these charge carriers are mo ...
AL8400 /AL8400Q Description Applications Pin Assignments
... The AL8400 is a 5-terminal adjustable Linear LED driver-controller offering excellent temperature stability and output handling capability. The AL8400 simplifies the design of linear and isolated LED drivers. With its low 200mV current sense FB pin, it controls the regulation of LED current with min ...
... The AL8400 is a 5-terminal adjustable Linear LED driver-controller offering excellent temperature stability and output handling capability. The AL8400 simplifies the design of linear and isolated LED drivers. With its low 200mV current sense FB pin, it controls the regulation of LED current with min ...
MICROWAVE MONOLITHIC POWER AMPLIFIER DESIGN
... cells used in the circuit can be designed for optimum electrical and thermal performance. One is not restricted to a particular set of available transistor cell sizes, as is the case with a discrete amplifier. For MMIC power amplifiers that incorporate multiple gain stages, the impedance levels betw ...
... cells used in the circuit can be designed for optimum electrical and thermal performance. One is not restricted to a particular set of available transistor cell sizes, as is the case with a discrete amplifier. For MMIC power amplifiers that incorporate multiple gain stages, the impedance levels betw ...
Constant Current Regulator LED Circuit Enhanced for
... This circuit is a sophisticated variation on the LED lighting circuits described in design notes DN05084 and DN05088. It runs on 120 VAC and uses several special design features to optimize the dimming performance. The LED voltages should be between 60 and 68 volts per string during operation. While ...
... This circuit is a sophisticated variation on the LED lighting circuits described in design notes DN05084 and DN05088. It runs on 120 VAC and uses several special design features to optimize the dimming performance. The LED voltages should be between 60 and 68 volts per string during operation. While ...
History of the transistor
A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. The vacuum-tube triode, also called a (thermionic) valve, was the transistor's precursor, introduced in 1907.