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MAX9742 Single-/Dual-Supply, Stereo 16W, Class D Amplifier with Differential Inputs General Description
MAX9742 Single-/Dual-Supply, Stereo 16W, Class D Amplifier with Differential Inputs General Description

... Operating Temperature Range ...........................-40°C to +85°C Maximum Junction Temperature .....................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C ...
STM8S and STM8A high speed internal oscillator calibration
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14-Bit, 150 MSPS, 1.8 V Analog-to-Digital Converter AD9254
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... The wide bandwidth, truly differential SHA allows a variety of user-selectable input ranges and offsets, including single-ended applications. It is suitable for multiplexed systems that switch full-scale voltage levels in successive channels and for sampling single-channel inputs at frequencies well ...
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... LT6220I/LT6221I/LT6222I are guaranteed to meet specified performance from –40°C to 85°C. Note 6: Minimum supply voltage is guaranteed by power supply rejection ratio test. Note 7: Output voltage swings are measured between the output and power supply rails. Note 8: This parameter is not 100% tested. ...
2 GHz Ultralow Distortion Differential RF/IF Amplifier AD8352
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... The AD8352 is a high performance differential amplifier optimized for RF and IF applications. It achieves better than 80 dB SFDR performance at frequencies up to 200 MHz, and 65 dB beyond 500 MHz, making it an ideal driver for high speed 12-bit to 16-bit analog-to-digital converters (ADCs). Unlike o ...
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... VS = 5V, VO = 0.5V to 4.5V, RL = 1k to VS/2 VS = 5V, VO = 1.5V to 3.5V, RL = 100Ω to VS/2 VS = 3V, VO = 0.5V to 2.5V, RL=1k to VS/2 ...
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... For a sine wave, SINAD can be expressed in terms of the number of bits. Using the following formula, N = (SINAD – 1.76)/6.02 it is possible to get a measure of performance expressed as N, the effective number of bits. Thus, an effective number of bits for a device for sine wave inputs at a given inp ...
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... be configured via the optional menu driven Integra DIS-1540 display unit. A simple two button interface on the front panel of the unit allows display of 32 major electrical and power quality parameters. All set-up screens are password protected. Once configured, the status of each parameter can be v ...
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... 6 GHz and provides useful operation to 8 GHz. The input range is typically 60 dB (re: 50 Ω) with error less than ±1 dB. The AD8318 has a 10 ns response time that enables RF burst detection to beyond 45 MHz. The device provides unprecedented logarithmic intercept stability vs. ambient temperature con ...
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... The AD8352 is a high performance differential amplifier optimized for RF and IF applications. It achieves better than 80 dB SFDR performance at frequencies up to 200 MHz, and 65 dB beyond 500 MHz, making it an ideal driver for high speed 12-bit to 16-bit analog-to-digital converters (ADCs). Unlike o ...
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... amplifier in parallel with a unity-gain buffer. For small signals, this structure will simply amplify. However, as the signal becomes larger, a point will be reached at which the limiting amplifier in the last stage ceases to amplify and provides a constant voltage . As the input signal becomes larg ...
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Impact of VSWR on the Uncertainty Analysis of Harmonics

... interest. The 2nd harmonic adds a dc component that is usually not important. Higher order harmonics are generally are lower levels and do not have the impact as the 3rd harmonic. Impact of VSWR VSWR is a ratio of the reflected and incident voltage: VSWR = (Vincident + Vreflected) ¸ (Vincident - Vre ...
In the example shown in Figure 5-1, the p-p output... The  conventional  way  to  power ...
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... capacitors (values of 0.1 F are typical) are connected between the power supply pins of each IC and ground. Although usually adequate, this practice can be ineffective or even create worse transients than no bypassing at all. It is important to consider where the circuit’s currents originate, where ...
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... process allows for a minimum gate length of 0.35 μm, and has four metal layers and two layers of poly. A cross section of the wafer, shown in Figure 3.1 highlights the available layers and illustrates the layout of the transistor and capacitor modules. The process allows for n-channel MOSFETs (NMOS) ...
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Scattering parameters

Scattering parameters or S-parameters (the elements of a scattering matrix or S-matrix) describe the electrical behavior of linear electrical networks when undergoing various steady state stimuli by electrical signals.The parameters are useful for electrical engineering, electronics engineering, and communication systems design, and especially for microwave engineering.The S-parameters are members of a family of similar parameters, other examples being: Y-parameters, Z-parameters, H-parameters, T-parameters or ABCD-parameters. They differ from these, in the sense that S-parameters do not use open or short circuit conditions to characterize a linear electrical network; instead, matched loads are used. These terminations are much easier to use at high signal frequencies than open-circuit and short-circuit terminations. Moreover, the quantities are measured in terms of power.Many electrical properties of networks of components (inductors, capacitors, resistors) may be expressed using S-parameters, such as gain, return loss, voltage standing wave ratio (VSWR), reflection coefficient and amplifier stability. The term 'scattering' is more common to optical engineering than RF engineering, referring to the effect observed when a plane electromagnetic wave is incident on an obstruction or passes across dissimilar dielectric media. In the context of S-parameters, scattering refers to the way in which the traveling currents and voltages in a transmission line are affected when they meet a discontinuity caused by the insertion of a network into the transmission line. This is equivalent to the wave meeting an impedance differing from the line's characteristic impedance.Although applicable at any frequency, S-parameters are mostly used for networks operating at radio frequency (RF) and microwave frequencies where signal power and energy considerations are more easily quantified than currents and voltages. S-parameters change with the measurement frequency, so frequency must be specified for any S-parameter measurements stated, in addition to the characteristic impedance or system impedance.S-parameters are readily represented in matrix form and obey the rules of matrix algebra.
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