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634_1.pdf
634_1.pdf

... In the case of powder samples and highly imperfect single crystals, these assumptions are usually warranted. However, in large, highly perfect semiconductor crystals, one or even all may become invalid. In these cases a more complex theory is needed to describe the diffraction process. In this appro ...
Introduction to super-resolution microscopy
Introduction to super-resolution microscopy

... information of the samples, but also a variety of information from the cellular environment, such as ion concentrations, membrane potential and signaling molecules. The non-invasiveness and the range of available imaging modalities have attracted researchers in biology, medicine and related research ...
Fermi surface topology and de Hass-van Alphen orbits in PuIn $ _
Fermi surface topology and de Hass-van Alphen orbits in PuIn $ _

... We use the scheme of the full-potential linear augmented plane wave basis plus local basis17 (FPLAPW+lo), as implemented in the WIEN2K code.18 The LAPW sphere radii R used for Pu, In, Sn atoms are 2.5 Bohr. The interstitial plane wavenumber cut-off kmax R = 8.0 is chosen for the basis set. The semi- ...
Microscopy - Frank`s Hospital Workshop
Microscopy - Frank`s Hospital Workshop

... structures. Unfortunately this information is blurred by the fact that upon illumination all fluorescently labeled structures emit light no matter if they are in focus or not. This means that an image of a certain structure is always blurred by the contribution of light from structures which are out ...
Angle Resolved Scattering Combined with Optical Profilometry as
Angle Resolved Scattering Combined with Optical Profilometry as

... The work presents an application of two scanning optical techniques, i.e. optical prolometry and angle resolved scattering method. The rst method measures the light reected from a lm during scan of the surface, while the second method measures light intensity as a function of the scattering angl ...
Mapping out the structural changes of natural and pretreated plant
Mapping out the structural changes of natural and pretreated plant

... reflect the changes on the surface. Alternatively, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM) can provide surface morphology information but do not provide information on chemical composition [25,27,28]. Fluorescence microscopy [29] ...
Microscopes - Biozentrum
Microscopes - Biozentrum

... Galileo Galilei. He developed an occhiolino or compound microscope with a convex and a concave lens in 1609. Galileo's microscope was celebrated in the Accademia dei Lincei in 1624 and was the first such device to be given the name "microscope" a year latter by fellow Lincean Giovanni Faber. Faber c ...
Study Of The Electrical Properties For Cr+4:YAG Crystal In A
Study Of The Electrical Properties For Cr+4:YAG Crystal In A

... absorbers , a diode- pumped double passively Q-switched Nd:GdVO4 laser is realized and compared with a single passively Q-switched laser (L.Min, et al.,2008). The recovery time of the absorber is affected by the Q-switched laser pulse length and repetition rate , which results in changes of the outp ...
Self-Assembly Structures of Nonionic Surfactants at Graphite
Self-Assembly Structures of Nonionic Surfactants at Graphite

... Table 1 summarizes surfactant geometry as a function of two parameters, ethylene oxide number and concentration. Alkyl chain length and volume are constant in this series, and interfacial area, a0, is determined by the (steric) interactions between ethylene oxide chains within an aggregate. Increasi ...
Manipulation of single vortices in YBa2Cu3O6.354 with a
Manipulation of single vortices in YBa2Cu3O6.354 with a

... where bending of the vortices may occur. This should not affect studies of thin films. Second, the field coil applies a force over many square microns. It can only be used to manipulate a single vortex when the vortex is sufficiently isolated. This limitation could be reduced by designing different ...
Manipulation of single vortices in YBa2Cu3O6.354 with a locally
Manipulation of single vortices in YBa2Cu3O6.354 with a locally

... where bending of the vortices may occur. This should not affect studies of thin films. Second, the field coil applies a force over many square microns. It can only be used to manipulate a single vortex when the vortex is sufficiently isolated. This limitation could be reduced by designing different ...
Sulfur passivation of GaAs metal-semiconductor field
Sulfur passivation of GaAs metal-semiconductor field

... effort was made in the present work to study the effect of film thickness on passivation. All the electric measurements were performed by pinning the testing probes on the contact pads of the GaScovered GaAs wafer. For a real device where contact windows are needed, the GaS overlayer can be selectiv ...
Strip-shaped samples in a microwave Corbino spectrometer
Strip-shaped samples in a microwave Corbino spectrometer

... approaches are established for broadband microwave spectroscopy: the bolometric technique1 is well suited for superconductors due to its good sensitivity at low temperatures, but it does not reveal phase information. On the other hand there is the Corbino approach, where one measures the reflection ...
Development and application of new high
Development and application of new high

... concept of diode pumped solid state lasers of the second generation.6) Side pumped slab: The laser emission is gain guided and parasitic modes–living outside the fundamental mode volume–are amplified. The output power is limited by thermomechanical damage of the crystal. It is worth to mention that t ...
Laser hazard control checklist
Laser hazard control checklist

... 1.3.2 Class 4 lasers should be operated by remote control whenever practicable, thus eliminating the need for personnel to be physically present in the laser environment. Are the Class 4 lasers operated by remote control? 1.3.3 Good room lighting is important in areas where laser eye protection is w ...
10.8 LASERS The word `Laser` stands for Light Amplification by
10.8 LASERS The word `Laser` stands for Light Amplification by

... metastable state is long enough to ensure that population inversion can be achieved between the levels E1and E2 This is basically a three-level system. Absorption occurs in the green part of spectrum exciting electrons from the ground state E1 to the band of levels designated E3 in Figure 10.24. The ...
Mineral characterisation of industrial mineral deposits at the
Mineral characterisation of industrial mineral deposits at the

... now relatively commonplace in mineralogical laboratories. The capability to analyse images from SEM or microscope images on a routine, systematised basis has been possible through the development of user-friendly and compatible software coupled with increasingly powerful computers. The type of infor ...
Spin Density Functional Based Search for Half
Spin Density Functional Based Search for Half

... attained only by a d5 ion (viz. Mn2+ , Fe3+ , or Co4+ ). S=2 occurs only for d4 and d6 ions, and S= 23 only for d3 and d7 ions. S=1 is attained not only by d2 and d8 high spin ions, but also by the low spin d4 ion (t32g,+ t12g,− ) if γ is small. S= 12 occurs for low spin d5 and d7 ions as well as fo ...
effect of thermal stresses along crack surface on ultrasonic response
effect of thermal stresses along crack surface on ultrasonic response

... ABSTRACT. Artificial flaws can be manufactured by controlled thermal fatigue loading. The produced cracks can be introduced to a wide variety of materials. This technology gives also a unique opportunity to monitor the ultrasonic response of a crack during thermal loading. !!!!!This paper reports st ...
Characterization of Gallium Antimonide Grown on Semi
Characterization of Gallium Antimonide Grown on Semi

... mentioning that implicit in the word carrier is the idea that these charges are free to move and contribute to a current, which will be elaborated on later. There are two possible charged particles to be considered which are electrons and holes, holes being virtual particles that result from the abs ...
J. Phys. Chem. C - Photochemical Dynamics Group
J. Phys. Chem. C - Photochemical Dynamics Group

... us to revisit this characteristically unstable semiconductor in order to improve its photoelectrochemical response in aqueous electrolytes, with the aim of employing this ultra low-cost material for solar fuel production. Several studies on Cu2O electrodeposition,27−31 which is an attractive, robust ...
Mesas: Their Role in the Formation of Widely Spaced Step Arrays
Mesas: Their Role in the Formation of Widely Spaced Step Arrays

... and photonics differs fundamentally from that of more conventional inorganic materials such as metals, semiconductors and oxides. A key difference involves the presence of strong covalent and ionic bonding in the latter class of materials, whereas organic materials are often bound by rather weak dis ...
(NH4)2S surface passivation
(NH4)2S surface passivation

... MOSFETs with Si integrated circuits. [1] Completely removing the defective native oxide from the Ge surface is essential to realizing high-performance Ge MOSFETs. Many attempts have been made to apply Si-cleaning processes for the treatment of Ge surfaces, but the results have been poor. Sun et al. ...
Development of a Total Internal Reflection Illumination System for
Development of a Total Internal Reflection Illumination System for

... to  its  ligand  functions  by  causing  the  dissociation  of  the  two  subunits.  We  have   explored  the  use  of  fluorescence  microscopy  in  several  modalities  to  test  this   hypothesis.    Firstly,  direct  imaging  of  fl ...
0563.PDF
0563.PDF

... yielding are nearly equal, i f « I Y « 10 to 50 MPa, so that from Equation (5) the pressure required to initiate cracking and failure in these materials must be in the range P * 60 to 300 MPa. The pressure-time loading history of such an experiment shows the increase in applied pressure until i z « ...
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Photoconductive atomic force microscopy



Photoconductive atomic force microscopy (PC-AFM) is a variant of atomic force microscopy that measures photoconductivity in addition to surface forces.
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