Alice1 pixel readout chip
... Configuration of peripheral logic and pixel cells by means of JTAG serial interface allows both write and read of configuration settings (test,mask….) reading back of analog levels (currents & voltages) generated by DACs connectivity tests of chips on stave using boundary scan allows detection ...
... Configuration of peripheral logic and pixel cells by means of JTAG serial interface allows both write and read of configuration settings (test,mask….) reading back of analog levels (currents & voltages) generated by DACs connectivity tests of chips on stave using boundary scan allows detection ...
Current Sharing in Multiphase Interleaved Converters by Means of
... can deviate as well as the inductance and the dutycycle which is applied at the gates of the MOSFETs. In fig. 3 the current characteristics are shown in case of phase inequalities. In (a) a 1 % dutycycle increase in phase two is set, in (b) a 20 % increase of the phase resistance. It is obvious that ...
... can deviate as well as the inductance and the dutycycle which is applied at the gates of the MOSFETs. In fig. 3 the current characteristics are shown in case of phase inequalities. In (a) a 1 % dutycycle increase in phase two is set, in (b) a 20 % increase of the phase resistance. It is obvious that ...
ECE3110 Prelabs
... – I will split the class. Half the class will come for the first hour. Other half will come for the second. – Bring your design calculations with you to lab – Please print ECE 311 – Lab 3 Lab Summary page from lab manual and bring with you to next lab. This will be turned in as your post lab prior t ...
... – I will split the class. Half the class will come for the first hour. Other half will come for the second. – Bring your design calculations with you to lab – Please print ECE 311 – Lab 3 Lab Summary page from lab manual and bring with you to next lab. This will be turned in as your post lab prior t ...
LT1769 - Constant-Current/Constant
... ripple current in the converter, so it must have adequate ripple current rating. Worst-case RMS ripple current will be equal to one half of the output charge current. Actual capacitance value is not critical. Solid tantalum capacitors such as the AVX TPS and Sprague 593D series have high ripple curr ...
... ripple current in the converter, so it must have adequate ripple current rating. Worst-case RMS ripple current will be equal to one half of the output charge current. Actual capacitance value is not critical. Solid tantalum capacitors such as the AVX TPS and Sprague 593D series have high ripple curr ...
Supplementary Information for
... mM). These observations are in agreement with the predictions of our model. However, the similar signals observed for 1M / 10 mM and 3.3 M / 33 mM, are fundamentally different from the expectation for a conventional FET charge sensing mechanism in which any increase of buffer concentration will redu ...
... mM). These observations are in agreement with the predictions of our model. However, the similar signals observed for 1M / 10 mM and 3.3 M / 33 mM, are fundamentally different from the expectation for a conventional FET charge sensing mechanism in which any increase of buffer concentration will redu ...
DRV8837,DRV8838 - Texas Instruments
... The DRV883x family of devices is an H-bridge driver that can drive one dc motor or other devices like solenoids. The outputs are controlled using either a PWM interface (IN1 and IN2) on the DRV8837 device or a PH-EN interface on the DRV8838 device. A low-power sleep mode is included, which can be en ...
... The DRV883x family of devices is an H-bridge driver that can drive one dc motor or other devices like solenoids. The outputs are controlled using either a PWM interface (IN1 and IN2) on the DRV8837 device or a PH-EN interface on the DRV8838 device. A low-power sleep mode is included, which can be en ...
IC Knowledge – Glossary of Semiconductor Terminology A
... Background Impurity ‐ the concentration of impurity present in a wafer prior to some or all processing. Most wafers as manufactured have a uniform concentration of a dopant already in the wafer. Alternately the background concentration might be set by a relatively deep diffusion or epitaxial depo ...
... Background Impurity ‐ the concentration of impurity present in a wafer prior to some or all processing. Most wafers as manufactured have a uniform concentration of a dopant already in the wafer. Alternately the background concentration might be set by a relatively deep diffusion or epitaxial depo ...
Up to 3 A step-down switching regulator
... The ST1S14 is a step-down monolithic power switching regulator able to deliver up to 3 A DC current to the load depending on the application conditions. The high current level is also achieved thanks to a HSOP8 package with exposed frame, that allows to reduce the Rth(JA) down to approximately 40 °C ...
... The ST1S14 is a step-down monolithic power switching regulator able to deliver up to 3 A DC current to the load depending on the application conditions. The high current level is also achieved thanks to a HSOP8 package with exposed frame, that allows to reduce the Rth(JA) down to approximately 40 °C ...
datasheet - Texas Instruments
... Seamless transition into power save mode), an advanced regulation topology, that combines the advantages of hysteretic, voltage mode and current mode control including an AC loop directly associated to the output voltage. This control loop takes information about output voltage changes and feeds it ...
... Seamless transition into power save mode), an advanced regulation topology, that combines the advantages of hysteretic, voltage mode and current mode control including an AC loop directly associated to the output voltage. This control loop takes information about output voltage changes and feeds it ...
AP5727 BIAS POWER SUPPLY FOR OLED SUB DISPLAY AND TFT-LED
... The forward voltage drop of a Schottky diode represents the conduction loss in the diode, while the diode capacitance (CT) represents the switching loss. For diode selection, both forward voltage drop and diode capacitance need to be considered. Schottky diodes with higher current ratings usually ha ...
... The forward voltage drop of a Schottky diode represents the conduction loss in the diode, while the diode capacitance (CT) represents the switching loss. For diode selection, both forward voltage drop and diode capacitance need to be considered. Schottky diodes with higher current ratings usually ha ...
Device circuit breakers
... be configured individually and have an electronic locking mechanism to prevent accidental changes. The status of each channel is displayed directly on the device and can also be queried as group remote signaling using the connections provided for this purpose. ...
... be configured individually and have an electronic locking mechanism to prevent accidental changes. The status of each channel is displayed directly on the device and can also be queried as group remote signaling using the connections provided for this purpose. ...
E-Guide to Solving Today`s Semiconductor Device Characterization
... CHANNEL EFFECTIVE MOBILITY TECHNIQUE | MONITORING OXIDE BREAKDOWN | PCM DEVICES | BTI TESTING | VERY LOW FREQUENCY C-V | LAB-BASED AUTOMATION previous ...
... CHANNEL EFFECTIVE MOBILITY TECHNIQUE | MONITORING OXIDE BREAKDOWN | PCM DEVICES | BTI TESTING | VERY LOW FREQUENCY C-V | LAB-BASED AUTOMATION previous ...
T/2 RX FIR - Broadcom
... The architecture of previously published 40 Gb/s feed-forward equalizers (e.g., [1], [8]), is shown in Fig. 4(a). Each tap delay is implemented through two separate delay elements: one at the input of the multipliers and one at the output, with the overall delay being the sum of the two individual d ...
... The architecture of previously published 40 Gb/s feed-forward equalizers (e.g., [1], [8]), is shown in Fig. 4(a). Each tap delay is implemented through two separate delay elements: one at the input of the multipliers and one at the output, with the overall delay being the sum of the two individual d ...
DC/DC converter
... PIN DPR This terminal is used to measure the voltage drop across the turned-on power transistor in order to ensure protection from short circuit and overload of the IGBT. This involves monitoring the collector voltage and turning off the device if this voltage rises above a certain limit. The best m ...
... PIN DPR This terminal is used to measure the voltage drop across the turned-on power transistor in order to ensure protection from short circuit and overload of the IGBT. This involves monitoring the collector voltage and turning off the device if this voltage rises above a certain limit. The best m ...
MAX961–MAX964/ MAX997/MAX999 Single/Dual/Quad, Ultra
... The MAX961–MAX964/MAX997/MAX999 are low-power, ultra-high-speed comparators with internal hysteresis. These devices are optimized for single +3V or +5V operation. The input common-mode range extends 100mV Beyond-theRails™, and the outputs can sink or source 4mA to within 0.52V of GND and VCC. Propag ...
... The MAX961–MAX964/MAX997/MAX999 are low-power, ultra-high-speed comparators with internal hysteresis. These devices are optimized for single +3V or +5V operation. The input common-mode range extends 100mV Beyond-theRails™, and the outputs can sink or source 4mA to within 0.52V of GND and VCC. Propag ...
AD549: 英文产品数据手册下载
... The ultralow input current of the part is achieved with Topgate™ JFET technology, a process development exclusive to Analog Devices, Inc. This technology allows fabrication of extremely low input current JFETs compatible with a standard junction isolated bipolar process. The 1015 Ω common-mode imped ...
... The ultralow input current of the part is achieved with Topgate™ JFET technology, a process development exclusive to Analog Devices, Inc. This technology allows fabrication of extremely low input current JFETs compatible with a standard junction isolated bipolar process. The 1015 Ω common-mode imped ...
T5 Basic Electricity Questions
... T5D03 What formula is used to calculate resistance in a circuit? A. Resistance (R) equals voltage (E) multiplied by current (I) B. Resistance (R) equals voltage (E) divided by current (I) C. Resistance (R) equals voltage (E) added to current (I) D. Resistance (R) equals voltage (E) minus current (I ...
... T5D03 What formula is used to calculate resistance in a circuit? A. Resistance (R) equals voltage (E) multiplied by current (I) B. Resistance (R) equals voltage (E) divided by current (I) C. Resistance (R) equals voltage (E) added to current (I) D. Resistance (R) equals voltage (E) minus current (I ...
AAT4285 数据资料DataSheet下载
... power switch designed for high-side load switching applications. The device operates with input voltages ranging from 3.0V to 13.2V, making it ideal for single- or multi-cell battery-powered applications. In cases where the input voltage drops below 3.0V, the AAT4285 MOSFET is protected from enterin ...
... power switch designed for high-side load switching applications. The device operates with input voltages ranging from 3.0V to 13.2V, making it ideal for single- or multi-cell battery-powered applications. In cases where the input voltage drops below 3.0V, the AAT4285 MOSFET is protected from enterin ...
How to Design With TPS65560/TPS65561 Photo Flash Charger and IGBT Driver ..................................................................................
... capacitor from a battery input, and subsequently discharging the capacitor to a xenon flash tube. These devices have an integrated voltage reference, power switch, insulated gate bipolar transistor (IGBT) driver, and control logic blocks for capacitor charging and driving IGBT applications. Compared ...
... capacitor from a battery input, and subsequently discharging the capacitor to a xenon flash tube. These devices have an integrated voltage reference, power switch, insulated gate bipolar transistor (IGBT) driver, and control logic blocks for capacitor charging and driving IGBT applications. Compared ...
Old Company Name in Catalogs and Other Documents
... magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply ...
... magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply ...
SD101AWS – SD101CWS Features Mechanical Data
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.