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ISL45042A - Intersil
ISL45042A - Intersil

... and R2 (see Figure 1). The voltage difference between the VOUT pin and ISET pin (see Figure 5) has to be greater than 1.75V. This will keep the output MOS transistor in the saturation region. Expected current settings and 7-bit accuracy occurs when the output MOS transistor is operating in the satur ...
Introduction to SIDACtor® Devices
Introduction to SIDACtor® Devices

... current that can be applied to the ESD protector without damaging the device. The surge waveform conditions are always specified. Sometimes, several surge waveforms are specified: ...
FSA3357 Low Voltage SP3T Analog Switch (3:1 Multiplexer/Demultiplexer) FSA
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... The FSA3357 is a high performance, single-pole/triple-throw (SP3T) Analog Switch or 3:1 Multiplexer/Demultiplexer. The device is fabricated with advanced sub-micron CMOS technology to achieve high speed enable and disable times and low On Resistance. The break before make select circuitry prevents d ...
report
report

... output from the VCO. This means that the feedback loop must have a total divide ratio of 462. The divide-by-two halves the frequency, leaving the programmable divider to divide by 231. In reality, this would provide a frequency step of 8 MHz. This tuner has to discriminate 6 MHz channels; therefore, ...
XLamp ML and MX Breakdown Voltage
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... The breakdown voltages observed for both XLamp ML and MX LEDs are much lower than the breakdown voltages observed for the ceramic-substrate based XLamp XP, XR, XM and XT LED families, typically greater than 1000 V. This is due to the ML and MX LED design configuration; the LED chip is directly conne ...
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The Chalkboard - The Electrochemical Society
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... conductance, Gp, of the MIS structure, is minimal in both the cases. However, in the low frequency range, for a given bias if frequency is increased gradually, energy loss increases as more interface traps respond with a time lag. If the frequency is increased further, it starts to decrease as fewer ...
PAM2808 Description Pin Assignments
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... 4.7µF minimum value capacitor from VO to GND is also required. To improve transient response, noise rejection, and ripple rejection, an additional 10μF or larger, low ESR capacitor is recommended at the output. A higher-value, low ESR output capacitor may be necessary if large, fast-rise-time load t ...
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... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
PAM2846 Description Pin Assignments
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... 1) Minimize the area of the high current switching loop of the rectifier diode and output capacitor to avoid excessive switching noise. 2) Connect high-current input and output components with short and wide connections. The high-current input loop goes from the positive terminal of the input capaci ...
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... The MAX16999 linear regulator operates from a 2.5V to 5.5V input voltage and delivers 100mA continuous load current with a low quiescent current typically around 13μA. The output voltage is preset to internally trimmed voltages in the 0.5V to 3.3V range (see the Selector Guide). An active-low, open- ...
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... microinverter. Undersized conductors can cause the voltage measured at the microinverter to fall outside of the IEEE limits, triggering an ACVOOR condition. This results in loss of energy harvest. Although the National Electric Code recommends that branch circuit conductors be sized for a maximum of ...
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... Microwave sources used to be bulky and expensive in the early era of the microwave industry. For example, vacuum tubes are in the 1940s and reflex klystrons are in the 1970s [1]. However, the evolution of microwave technology continuously demands high quality, low cost microwave oscillators. Taking ...
Application Note 9017 Manufacturing Technology of a Small Capacity Inverter CONTENTS
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... protect the IGBT. Section 4 introduces the boot strap used in the inverter gate drive. It also describes the method for deciding on the rating of each component. These values can be used in other application circuits. Lastly, Section 5 describes the design of an actual 3[kVA] class inverter based on ...
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... “TBU” is a registered trademark of Bourns, Inc. in the United States and other countries. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Use ...
International Electrical Engineering Journal (IEEJ) Vol. 6 (2015) No.1, pp. 1743-1748
International Electrical Engineering Journal (IEEJ) Vol. 6 (2015) No.1, pp. 1743-1748

... of more number of generating stations and load centers which are interconnected through the power transmission lines. Industrial processes containing voltage sensitive devices, vulnerable to degradation in the quality of power supply. The power system especially the distribution system, have numerou ...
Low-Power Reference and Bipolar Input Voltage Conditioning Circuit
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... Figure 3 depicts a simplified schematic for this design showing the MSP430 ADC inputs and full input conditioning circuitry. The ADC is configured for a bipolar measurement where final conversion result will be the differential voltage, VDIFF, between the voltage at the positive and negative ADC inp ...
MAX3205E/MAX3207E/MAX3208E Dual, Quad, and Hex High-Speed Differential ESD-Protection ICs General Description
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... datacom, and interchassis interconnect. Each channel consists of a pair of diodes that steer ESD current pulses to VCC or GND. The MAX3205E/MAX3207E/MAX3208E protect against ESD pulses up to ±15kV Human Body Model, ±8kV Contact Discharge, and ±15kV Air-Gap Discharge, as specified in IEC 61000-4-2. A ...
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... used for single-inductor boost-buck topology in conjunction with the MAX15054 and an additional MOSFET. The current-mode control with programmable slope compensation provides fast response and simplifies loop compensation. The MAX16814 also features an adaptive output-voltage control scheme that min ...
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... 7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation ...
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DT1042-04SO Features Mechanical Data
DT1042-04SO Features Mechanical Data

... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
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Transistor



A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.
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