ISL9R1560PF2 15A, 600V, STEALTH™ Diode ISL9R1560PF2 — STEALTH™ Diode
... loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switc ...
... loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switc ...
Design and Implementation of a GSM based Electronic Appliances
... direction but not in the other. Since relay coils have a large amount of inductance, they generate a very large voltage spike when released which can destroy the transistor, the microcontroller and other electronic elements. Hence, to ii) The relay switch board prevent these damages a protection dio ...
... direction but not in the other. Since relay coils have a large amount of inductance, they generate a very large voltage spike when released which can destroy the transistor, the microcontroller and other electronic elements. Hence, to ii) The relay switch board prevent these damages a protection dio ...
Voltage Line Conditioner
... 1- The increase of voltage-sensitive equipments results in greater demand for high-quality voltage sources; 2- The existence of standards limiting the harmonic pollution in electric power system; 3- To aid the national industries in the development of high-quality voltage sources. ...
... 1- The increase of voltage-sensitive equipments results in greater demand for high-quality voltage sources; 2- The existence of standards limiting the harmonic pollution in electric power system; 3- To aid the national industries in the development of high-quality voltage sources. ...
Generic Stress Factors and De-rating
... Components are the basic elements for developing electronic equipment, and the data sheets of manufacturers are used for selecting the components. The data sheets specify maximum ratings and electrical characteristics for components. The parameters of maximum ratings are the reliability-related stre ...
... Components are the basic elements for developing electronic equipment, and the data sheets of manufacturers are used for selecting the components. The data sheets specify maximum ratings and electrical characteristics for components. The parameters of maximum ratings are the reliability-related stre ...
FMKA140 Datasheet
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
RF3223 LOW NOISE, LINEAR AMPLIFIER HIGH LINEARITY/DRIVER AMPLIFIER Features
... Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Abs ...
... Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Abs ...
uC based Whether Activated Car System
... Switching frequency for audio amplifiers and computer power supplies is about ten to hundreds of kHz. The ratio of the On time to the time period of the pulse is known as duty cycle. If the duty cycle is low, it implies low power. The power loss in the switching device is very low, due to almost ne ...
... Switching frequency for audio amplifiers and computer power supplies is about ten to hundreds of kHz. The ratio of the On time to the time period of the pulse is known as duty cycle. If the duty cycle is low, it implies low power. The power loss in the switching device is very low, due to almost ne ...
2DA1774QLP Features Mechanical Data
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
Technical datasheet on 400W high voltage power supply units
... will give excellent performance in the most severe of electrical environments. The Series OL400W utilises air as the primary insulation medium for voltages up to 60kV; achieving a high packing density for high voltage supplies giving 65W/litre, 1W/inch3. The 1U construction (2U for 80kV units) allow ...
... will give excellent performance in the most severe of electrical environments. The Series OL400W utilises air as the primary insulation medium for voltages up to 60kV; achieving a high packing density for high voltage supplies giving 65W/litre, 1W/inch3. The 1U construction (2U for 80kV units) allow ...
PBSS304NX 1. Product profile 60 V, 4.7 A NPN low V
... NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX. ...
... NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX. ...
PBSS302NX 1. Product profile 20 V, 5.3 A NPN low V
... Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors ...
... Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors ...
An algorithm for finding multiple DC operating points using the
... Circuit having multiple DC operating points are frequently encountered in electronic devices. Finding the operating points is a basic and difficult task in circuit simulation. The methods for finding all the DC operating points are very time consuming and capable of analysing only small size circuit ...
... Circuit having multiple DC operating points are frequently encountered in electronic devices. Finding the operating points is a basic and difficult task in circuit simulation. The methods for finding all the DC operating points are very time consuming and capable of analysing only small size circuit ...
Observing the semiconducting band-gap alignment of MoS layers
... as they are all sufficiently highly doped that the in-plane resistances are all lower than the tunnel barrier resistance. We also note that our measurements imply that the regions of different MoS2 thicknesses have different doping levels due to the different contact potential between each and the S ...
... as they are all sufficiently highly doped that the in-plane resistances are all lower than the tunnel barrier resistance. We also note that our measurements imply that the regions of different MoS2 thicknesses have different doping levels due to the different contact potential between each and the S ...
DSS3515M Features Mechanical Data
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
... dynamically to adjust the operating state of the circuit. A high threshold voltage in standby mode gives low leakage current whereas a low threshold voltage allows for higher current drives in the active mode of operation. Dynamic threshold CMOS is achieved by joining the gate and body together [14] ...
... dynamically to adjust the operating state of the circuit. A high threshold voltage in standby mode gives low leakage current whereas a low threshold voltage allows for higher current drives in the active mode of operation. Dynamic threshold CMOS is achieved by joining the gate and body together [14] ...
an introduction to semiconductors
... across the junction. This field is called the barrier field. It is directed from the n-side to the p–side of the junction and opposes the flow of holes from the p to n and of electrons from n to p side. So the net recombination current decreases. Note that so long as the recombination process goes o ...
... across the junction. This field is called the barrier field. It is directed from the n-side to the p–side of the junction and opposes the flow of holes from the p to n and of electrons from n to p side. So the net recombination current decreases. Note that so long as the recombination process goes o ...
Buffer Interface with Negative Gate Bias for Desat
... The power supplies +15 V and -5 V can be obtained using a flyback circuit with a center tap on the winding to get the reference voltage node. • HOPBUF is the buffered version of the HOP signal and it is used during normal operation to turn-on the IGBT. When HOP is on, also HOPBUF is on, while HON, H ...
... The power supplies +15 V and -5 V can be obtained using a flyback circuit with a center tap on the winding to get the reference voltage node. • HOPBUF is the buffered version of the HOP signal and it is used during normal operation to turn-on the IGBT. When HOP is on, also HOPBUF is on, while HON, H ...
Solutions - University of California, Berkeley
... resistive path. We can model this using a RC network, where R is the parallel combination of 50 and 3k, and C is the 20fF load. Note that the parallel combination method is just an approximation that works in this case because the PMOS “resistance” is much smaller than the 3k resistor. ...
... resistive path. We can model this using a RC network, where R is the parallel combination of 50 and 3k, and C is the 20fF load. Note that the parallel combination method is just an approximation that works in this case because the PMOS “resistance” is much smaller than the 3k resistor. ...
MAX8860 低噪声、低压差300mA (确保)稳压器，µMAX封装
... When operating the MAX8860 with an input voltage above 5.5V, a minimum load current of 50µA is required to maintain regulation in preset voltage mode. When setting the output with external resistors, ensure that the minimum current through the external feedback resistors and load is at least 60µA. T ...
... When operating the MAX8860 with an input voltage above 5.5V, a minimum load current of 50µA is required to maintain regulation in preset voltage mode. When setting the output with external resistors, ensure that the minimum current through the external feedback resistors and load is at least 60µA. T ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.