MAX8860 低噪声、低压差300mA (确保)稳压器，µMAX封装
... When operating the MAX8860 with an input voltage above 5.5V, a minimum load current of 50µA is required to maintain regulation in preset voltage mode. When setting the output with external resistors, ensure that the minimum current through the external feedback resistors and load is at least 60µA. T ...
... When operating the MAX8860 with an input voltage above 5.5V, a minimum load current of 50µA is required to maintain regulation in preset voltage mode. When setting the output with external resistors, ensure that the minimum current through the external feedback resistors and load is at least 60µA. T ...
48-V/+48-V hot-swap applications
... 1a demonstrates the simplest topology. Two resistors are used to divide the higher input voltage into a lower voltage. However, in this implementation, the voltage at the output of the divider will track all changes in the 48-V input supply. Because the fluctuations and tolerances of the 48-V supply ...
... 1a demonstrates the simplest topology. Two resistors are used to divide the higher input voltage into a lower voltage. However, in this implementation, the voltage at the output of the divider will track all changes in the 48-V input supply. Because the fluctuations and tolerances of the 48-V supply ...
PSM05S93E5-A
... All capacitors should be mounted as close to the terminals as possible. (C1: good temperature, frequency characteristic electrolytic type and C2:0.22μ-2μF, good temperature, frequency and DC bias characteristic ceramic type are recommended.) Input drive is High-active type. There is a minimum 3.3kΩ ...
... All capacitors should be mounted as close to the terminals as possible. (C1: good temperature, frequency characteristic electrolytic type and C2:0.22μ-2μF, good temperature, frequency and DC bias characteristic ceramic type are recommended.) Input drive is High-active type. There is a minimum 3.3kΩ ...
A 0.9V 150MHz 10mW 4mm2 2-D Discrete Cosine Transform Core
... In the VT scheme, no transistor sees high-voltage stress of gate oxide and junctions. Transistors are optimized for use at 3.3V. The gate oxide thickness is 8nm. The maximum voltage that assures reliability of the gate oxide is VDD+10%, or 3.6V. The substrate charge injector (SCI) in Figure 6 receiv ...
... In the VT scheme, no transistor sees high-voltage stress of gate oxide and junctions. Transistors are optimized for use at 3.3V. The gate oxide thickness is 8nm. The maximum voltage that assures reliability of the gate oxide is VDD+10%, or 3.6V. The substrate charge injector (SCI) in Figure 6 receiv ...
2.5 Gb/s CMOS preamplifier for low-cost fiber-optic
... technologies is the transistor transition frequency, ft. This magnitude represents the maximum attainable operation frequency in a specific technology. Although the maximum oscillation frequency could be a more important parameter in a high-frequency amplifier design, the design with ft becomes equi ...
... technologies is the transistor transition frequency, ft. This magnitude represents the maximum attainable operation frequency in a specific technology. Although the maximum oscillation frequency could be a more important parameter in a high-frequency amplifier design, the design with ft becomes equi ...
MXL1001
... designs using these devices, with or without removal of external frequency compensation or nulling components. The MXL1001 can also be used in 741, LF156 or OP-15 applications provided the nulling circuitry is removed. The MXL1001 is specified over a wide supply voltage range from ±3V to ±18V. Opera ...
... designs using these devices, with or without removal of external frequency compensation or nulling components. The MXL1001 can also be used in 741, LF156 or OP-15 applications provided the nulling circuitry is removed. The MXL1001 is specified over a wide supply voltage range from ±3V to ±18V. Opera ...
Microsoft Word - Synhronous Machines Units 5
... During the operation of the alternator, resistance voltage drop IaRa and armature leakage reactance drop IaXLare actually emf quantities and the armature reaction reactance is ammf quantity. To determine the regulation of the alternator by this method OCC, SCC and ZPF test details and characteristic ...
... During the operation of the alternator, resistance voltage drop IaRa and armature leakage reactance drop IaXLare actually emf quantities and the armature reaction reactance is ammf quantity. To determine the regulation of the alternator by this method OCC, SCC and ZPF test details and characteristic ...
FSB70250 Motion SPM 7 Series ®
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 7 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 7 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
BD6360GUL
... As long as the IC is kept within this range, there should be no problems in the IC’s performance. Conversely, extreme temperature changes may result in poor IC performance, even if the changes are within the above range. 3) Power supply and wiring Be sure to connect the power terminals outside the I ...
... As long as the IC is kept within this range, there should be no problems in the IC’s performance. Conversely, extreme temperature changes may result in poor IC performance, even if the changes are within the above range. 3) Power supply and wiring Be sure to connect the power terminals outside the I ...
EPC9047 Quick Start Guide - Efficient Power Conversion
... The EPC9047 development boards are in a half bridge topology with onboard gate drives, featuring the EPC2033 eGaN® field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of these eGaN FETs by including all the critical components on a single bo ...
... The EPC9047 development boards are in a half bridge topology with onboard gate drives, featuring the EPC2033 eGaN® field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of these eGaN FETs by including all the critical components on a single bo ...
Starting Over: gm/Id-Based MOSFET Modeling as a Basis for
... not be fatal, since they actually err on the side of caution; for example, if the “square-law” is used to compute the saturation voltage for transistor biasing, it will be considerably overpredicted. This is not a problem when the supply voltage is relatively large (e.g. 5V), since there is consider ...
... not be fatal, since they actually err on the side of caution; for example, if the “square-law” is used to compute the saturation voltage for transistor biasing, it will be considerably overpredicted. This is not a problem when the supply voltage is relatively large (e.g. 5V), since there is consider ...
AND9056 - High Performance IGBT for Induction Heating
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
ACS755xCB-130 - Allegro Microsystems
... Sensitivity (Sens). The change in device output in response to a 1 A change through the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G / A) and the linear IC amplifier gain (mV/G). The linear IC amplifier gain is programmed at the factory to optimize the sen ...
... Sensitivity (Sens). The change in device output in response to a 1 A change through the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G / A) and the linear IC amplifier gain (mV/G). The linear IC amplifier gain is programmed at the factory to optimize the sen ...
FSB70625 Motion SPM 7 Series ®
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 7 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 7 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
How to select the Triac, ACS, or ACST that fits your application
... A BEMF can be applied by a motor when the series AC switch is OFF. A motor can still be running due to inertia or if a mechanical torque is applied. A BEMF will occur across a motor if it is turning and if an inductive field is applied. This is the reason why, such a BEMF does not occur with univers ...
... A BEMF can be applied by a motor when the series AC switch is OFF. A motor can still be running due to inertia or if a mechanical torque is applied. A BEMF will occur across a motor if it is turning and if an inductive field is applied. This is the reason why, such a BEMF does not occur with univers ...
Low Temperature Effects on CMOS Circuits
... some issues that were initially present in RT but no longer in LN. Transconductance and resistance correlate strongly with switching speed [4], one issue not affected by technology scaling. Latchup is also discussed in this section. A. MOSFET Transconductance Transductance ( g m ) is defined as the ...
... some issues that were initially present in RT but no longer in LN. Transconductance and resistance correlate strongly with switching speed [4], one issue not affected by technology scaling. Latchup is also discussed in this section. A. MOSFET Transconductance Transductance ( g m ) is defined as the ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.