Fault Classification in Phase-Locked Loops Using Back Propagation
... a three layer BPNN with one hidden layer is shown in Fig. 8. Two commonly used neuron activation functions for the neuron in Fig. 8 are sigmoidal and tansig functions. Both functions are continuously differentiable everywhere and typically have the following mathematical forms: ...
... a three layer BPNN with one hidden layer is shown in Fig. 8. Two commonly used neuron activation functions for the neuron in Fig. 8 are sigmoidal and tansig functions. Both functions are continuously differentiable everywhere and typically have the following mathematical forms: ...
MAX8556/MAX8557 4A Ultra-Low-Input-Voltage LDO Regulators General Description
... this range or the IC experiences thermal fault, POK is internally pulled low. This open-drain output requires an external pullup resistor to VIN or another logic supply below 3.6V. For glitch immunity, an internal delay circuit prevents the output from switching for 50µs (typ) after the trip thresho ...
... this range or the IC experiences thermal fault, POK is internally pulled low. This open-drain output requires an external pullup resistor to VIN or another logic supply below 3.6V. For glitch immunity, an internal delay circuit prevents the output from switching for 50µs (typ) after the trip thresho ...
PAM2307 Description Pin Assignments
... NiMH cell,and other standard power sources. The output voltage is adjustable from 0.6V to the input voltage. The PAM2307 employs internal power switch and synchronous rectifier to minimize external part count and realize high efficiency. During shutdown, the input is disconnected from the output and ...
... NiMH cell,and other standard power sources. The output voltage is adjustable from 0.6V to the input voltage. The PAM2307 employs internal power switch and synchronous rectifier to minimize external part count and realize high efficiency. During shutdown, the input is disconnected from the output and ...
Supply-Voltage Supervisor, TL7700 (Rev. G)
... The TL7700 is a bipolar integrated circuit designed for use as a reset controller in microcomputer and microprocessor systems. The SENSE voltage can be set to any value greater than 0.5 V using two external resistors. The hysteresis value of the sense voltage also can be set by the same resistors. T ...
... The TL7700 is a bipolar integrated circuit designed for use as a reset controller in microcomputer and microprocessor systems. The SENSE voltage can be set to any value greater than 0.5 V using two external resistors. The hysteresis value of the sense voltage also can be set by the same resistors. T ...
BD1604MUV
... degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc. (12) Not connecting input terminals In terms of extremely high impedance of CMOS gate, to open the input terminals causes unstable state. Unstable state occurs from the inside gate voltage o ...
... degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc. (12) Not connecting input terminals In terms of extremely high impedance of CMOS gate, to open the input terminals causes unstable state. Unstable state occurs from the inside gate voltage o ...
MAX8622 Fast-Charge-Time Xenon Flash Charger for Digital Still Cameras and Camera Phones
... because of physical separation. If the primary inductance is high, the transformer may need multiple windings for the primary. A small amount of energy is stored between the windings and this energy is represented as leakage inductance. If the primary inductance is too small, the primary windings ma ...
... because of physical separation. If the primary inductance is high, the transformer may need multiple windings for the primary. A small amount of energy is stored between the windings and this energy is represented as leakage inductance. If the primary inductance is too small, the primary windings ma ...
Evaluates: MAX40200 “Ideal-Diode” in a 4
... device blocks reverse voltages and passes current when forward-biased, just as a normal diode would. The device, when forward-biased and enabled, conducts with as little as 45mV of voltage drop while carrying currents as high as 500mA. At higher currents (up to 1A), the voltage drop increases linear ...
... device blocks reverse voltages and passes current when forward-biased, just as a normal diode would. The device, when forward-biased and enabled, conducts with as little as 45mV of voltage drop while carrying currents as high as 500mA. At higher currents (up to 1A), the voltage drop increases linear ...
Keysight Technologies B1505A Power Device Analyzer/Curve Tracer
... Power devices require characterization across their entire operating region, which can range from nanoamps or microvolts up to more than one thousand amps and thousands of volts. In addition, the ability to perform narrow (microsecond range) pulsed IV measurements is also important to prevent device ...
... Power devices require characterization across their entire operating region, which can range from nanoamps or microvolts up to more than one thousand amps and thousands of volts. In addition, the ability to perform narrow (microsecond range) pulsed IV measurements is also important to prevent device ...
Paper 12.1_publicati..
... MISFET performance can be improved by the optimization of the nanowire growth and gate oxide deposition processing, as well as more aggressive device scaling. INTRODUCTION As complementary metal–oxide–semiconductor (CMOS) field-effect transistor (FET) scaling approaches the end of Moore’s law roadma ...
... MISFET performance can be improved by the optimization of the nanowire growth and gate oxide deposition processing, as well as more aggressive device scaling. INTRODUCTION As complementary metal–oxide–semiconductor (CMOS) field-effect transistor (FET) scaling approaches the end of Moore’s law roadma ...
Old Company Name in Catalogs and Other Documents
... Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. ...
... Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. ...
LM3914 Dot/Bar Display Driver (Rev. B)
... The simplified LM3914 block diagram is to give the general idea of the circuit's operation. A high input impedance buffer operates with signals from ground to 12V, and is protected against reverse and overvoltage signals. The signal is then applied to a series of 10 comparators; each of which is bia ...
... The simplified LM3914 block diagram is to give the general idea of the circuit's operation. A high input impedance buffer operates with signals from ground to 12V, and is protected against reverse and overvoltage signals. The signal is then applied to a series of 10 comparators; each of which is bia ...
ADN4665 数据手册DataSheet 下载
... Current-mode drivers offer considerable advantages over voltagemode drivers such as RS-422 drivers. The operating current remains fairly constant with increased switching frequency, whereas the operating current of voltage-mode drivers increases exponentially in most cases. This is caused by the ove ...
... Current-mode drivers offer considerable advantages over voltagemode drivers such as RS-422 drivers. The operating current remains fairly constant with increased switching frequency, whereas the operating current of voltage-mode drivers increases exponentially in most cases. This is caused by the ove ...
The DatasheetArchive - Datasheet Search Engine
... Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional ...
... Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional ...
AP133
... Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulator, protecting it from damage due to overheating. ...
... Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulator, protecting it from damage due to overheating. ...
Cmos Scaling Into The Nanometer Regime
... required, below which the standby power due to off-state leakage current becomes prohibitively high. The increasing ratio in Fig. 1 signifies a loss of gate overdrive, which degrades CMOS circuit performance gained from scaling, as can be seen in a plot of the normalized inverter delay versus in Fig ...
... required, below which the standby power due to off-state leakage current becomes prohibitively high. The increasing ratio in Fig. 1 signifies a loss of gate overdrive, which degrades CMOS circuit performance gained from scaling, as can be seen in a plot of the normalized inverter delay versus in Fig ...
Time - Weebly
... 1. It is a high efficiency diode oscillator . 2. Its oscillations depend on delay in current caused by avalanche process. 3. The diode diameter is about 50 mm for CW operations and is about 750 mm at lower frequency for high peak power application. 4. It can be operated over a range of 400MHz to 12G ...
... 1. It is a high efficiency diode oscillator . 2. Its oscillations depend on delay in current caused by avalanche process. 3. The diode diameter is about 50 mm for CW operations and is about 750 mm at lower frequency for high peak power application. 4. It can be operated over a range of 400MHz to 12G ...
Discretes – Explanations – Thyristors / Diodes
... to the RC circuit the rate of rise of voltage is limited during commutation. For higher circuit requirements, the RC circuit design should first be tested experimentally. The section SEMIPACK contains sample resistance and capacitance values recommended by SEMIKRON for standard line applications. Ov ...
... to the RC circuit the rate of rise of voltage is limited during commutation. For higher circuit requirements, the RC circuit design should first be tested experimentally. The section SEMIPACK contains sample resistance and capacitance values recommended by SEMIKRON for standard line applications. Ov ...
Dual General-Purpose Operational Amplifiers
... Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been de ...
... Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been de ...
irf.com - Newark
... The boost configuration is similar to the AC input solution, except that the boost converter circuit has to be re-dimensioned for the higher boost ratio and the power components need to be rescaled to handle the higher current levels due to the lower input voltage. The boost configuration has the ad ...
... The boost configuration is similar to the AC input solution, except that the boost converter circuit has to be re-dimensioned for the higher boost ratio and the power components need to be rescaled to handle the higher current levels due to the lower input voltage. The boost configuration has the ad ...
ACS715 - Pololu
... solutions for DC current sensing in automotive systems. The device package allows for easy implementation by the customer. Typical applications include motor control, load detection and management, switch-mode power supplies, and overcurrent fault protection. ...
... solutions for DC current sensing in automotive systems. The device package allows for easy implementation by the customer. Typical applications include motor control, load detection and management, switch-mode power supplies, and overcurrent fault protection. ...
Voltage optimisation Measurement and Verification guidance
... They operate satisfactorily within an operating voltage range. If 30 % or more of a site’s electrical load is made up of switch mode power supplies (SMPS), such as information technology in particular, the supplying circuit’s suitability for the increase in current as a result of the reduced voltage ...
... They operate satisfactorily within an operating voltage range. If 30 % or more of a site’s electrical load is made up of switch mode power supplies (SMPS), such as information technology in particular, the supplying circuit’s suitability for the increase in current as a result of the reduced voltage ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.