Zetex - AN46 - Zetex` current monitors with PolySwitchŽ overcurrent
... PolySwitch PPTC (Polymeric Positive temperature Coefficient) devices are protection devices for circuits, often called resettable fuses. They are placed in circuit as a series element; allowing current to flow into a circuit under normal operation and protect a circuit if an over-temperature or over ...
... PolySwitch PPTC (Polymeric Positive temperature Coefficient) devices are protection devices for circuits, often called resettable fuses. They are placed in circuit as a series element; allowing current to flow into a circuit under normal operation and protect a circuit if an over-temperature or over ...
Make a –10V to +10V Adjustable Precision Voltage Source (Rev. A)
... Make a –10V to +10V Adjustable Precision Voltage Source R. Mark Stitt .................................................................................................. High-Performance Analog ABSTRACT Many situations require a precision voltage source which can be adjusted through zero to both posi ...
... Make a –10V to +10V Adjustable Precision Voltage Source R. Mark Stitt .................................................................................................. High-Performance Analog ABSTRACT Many situations require a precision voltage source which can be adjusted through zero to both posi ...
Protect Sensitive Circuits from Overvoltage and Reverse Supply
... operating voltage window for at least 36ms in order to turn the external MOSFET back on. This effectively blocks 50Hz and 60Hz unrectified AC. LTC4365 also protects against negative VIN connections even when VOUT is driven by a separate supply. As long as the breakdown voltage of the external MOSFET ...
... operating voltage window for at least 36ms in order to turn the external MOSFET back on. This effectively blocks 50Hz and 60Hz unrectified AC. LTC4365 also protects against negative VIN connections even when VOUT is driven by a separate supply. As long as the breakdown voltage of the external MOSFET ...
Impact Series Semiconductor Testers
... consists of an operational amplifier and high voltage booster circuit within the control loop. The programmed output voltage can be applied to any lead of the device under test. The two voltage ranges are selected by logic circuits, which change the input resistor. Another, identical, digital-to-ana ...
... consists of an operational amplifier and high voltage booster circuit within the control loop. The programmed output voltage can be applied to any lead of the device under test. The two voltage ranges are selected by logic circuits, which change the input resistor. Another, identical, digital-to-ana ...
See datasheet - Texas Instruments
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
AN51 - Power Conditioning for Notebook and Palmtop Systems
... while maintaining high efficiency. Alternative notebook systems have been developed for narrow supply operation using for example, four NiCad batteries and a linear regulator to provide the 5V output. At full charge, four NiCad batteries can be as high as 6V and are allowed to discharge down to 4.5V ...
... while maintaining high efficiency. Alternative notebook systems have been developed for narrow supply operation using for example, four NiCad batteries and a linear regulator to provide the 5V output. At full charge, four NiCad batteries can be as high as 6V and are allowed to discharge down to 4.5V ...
FAN3268 2 A Low-Voltage PMOS-NMOS Bridge Driver F AN3
... frequency components of the current pulses. The bypass capacitor must provide the pulsed current from both of the driver channels and, if the drivers are switching simultaneously, the combined peak current sourced from the CBYP would be twice as large as when a single channel is switching. ...
... frequency components of the current pulses. The bypass capacitor must provide the pulsed current from both of the driver channels and, if the drivers are switching simultaneously, the combined peak current sourced from the CBYP would be twice as large as when a single channel is switching. ...
Analog Circuit Design in Nanoscale CMOS Technologies
... damage. High dielectric constant: term used in nanoscale technology nodes referring to gate materials that have higher dielectric constants than oxynitrde, such as hafnium and zirconium. High-performance process (platform) device: HP processes (platforms) incorporate thinner oxides than low power pl ...
... damage. High dielectric constant: term used in nanoscale technology nodes referring to gate materials that have higher dielectric constants than oxynitrde, such as hafnium and zirconium. High-performance process (platform) device: HP processes (platforms) incorporate thinner oxides than low power pl ...
ESD Protection for Portable Electronic Products Tech Note
... significantly shortened. This latent damage is difficult to detect. The illustration of this type of damage effect is in shown in Figure 1. A portion of the conductor was damaged by the ESD energy discharge. The weak link is still functioning, but the connection will most likely fail over time. ...
... significantly shortened. This latent damage is difficult to detect. The illustration of this type of damage effect is in shown in Figure 1. A portion of the conductor was damaged by the ESD energy discharge. The weak link is still functioning, but the connection will most likely fail over time. ...
US6J11
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
Slide 1
... different amperage rating of a Type S fuse has a matching socket base adapter with a different sized thread that prevents mismatching (rejection base). It stops a person from putting a 20 Amp rated fuse in a 15 Amp circuit. ...
... different amperage rating of a Type S fuse has a matching socket base adapter with a different sized thread that prevents mismatching (rejection base). It stops a person from putting a 20 Amp rated fuse in a 15 Amp circuit. ...
555 TIMER
... timer. When the toggle button is pushed the capacitor will put the same voltage on the input, causing the 555 (an inverter), to flip states. The capacitor will quickly charge or discharge to the voltage level that the network of R3, R4, R5 now presents. Since R5 is X10 larger than R3 and R4 this vol ...
... timer. When the toggle button is pushed the capacitor will put the same voltage on the input, causing the 555 (an inverter), to flip states. The capacitor will quickly charge or discharge to the voltage level that the network of R3, R4, R5 now presents. Since R5 is X10 larger than R3 and R4 this vol ...
Simulation and test structures
... What is the optimal process for forming the detector diodes? – Model charge collection, shielding, pinning layers After thinning a backside contact must be formed. This is usually done by implantation and high temperature furnace annealing - which will destroy the front side CMOS SOI circuitry. An a ...
... What is the optimal process for forming the detector diodes? – Model charge collection, shielding, pinning layers After thinning a backside contact must be formed. This is usually done by implantation and high temperature furnace annealing - which will destroy the front side CMOS SOI circuitry. An a ...
Failure Mechanisms For Transient Voltage Suppressors
... surge overstress. It has either failed in a significant manner due to thermal runaway or it is still good. The described mode of degradation (if not shorted) is where the TVS silicon internal element only supports a minimal value in voltage with very high leakage currents and minimal resistance such ...
... surge overstress. It has either failed in a significant manner due to thermal runaway or it is still good. The described mode of degradation (if not shorted) is where the TVS silicon internal element only supports a minimal value in voltage with very high leakage currents and minimal resistance such ...
Fan Transfer Function Lab Report
... Each fan is designated two graphs, voltage vs speed and voltage vs. voltage sensitivity (Hz/V). For the Voltage Sweep Graphs, the linear increase in speed shows The labview program in use performs a controlled voltage sweep from 5 to 12 volts through the DC motors. At the same time the fan speed is ...
... Each fan is designated two graphs, voltage vs speed and voltage vs. voltage sensitivity (Hz/V). For the Voltage Sweep Graphs, the linear increase in speed shows The labview program in use performs a controlled voltage sweep from 5 to 12 volts through the DC motors. At the same time the fan speed is ...
UNIT I _II
... denoted by during which both the outgoing diode and incoming diode are conducting. • This period is also known as “overlap” period. During the overlap period, the load current is the addition of the two diode currents, the assumption being made that the load is inductive enough to give a constant ...
... denoted by during which both the outgoing diode and incoming diode are conducting. • This period is also known as “overlap” period. During the overlap period, the load current is the addition of the two diode currents, the assumption being made that the load is inductive enough to give a constant ...
BDTIC CCM-PFC www.BDTIC.com/infineon ICE1PCS01
... The ICE1PCS01/G is a 8 pin control IC for power factor correction converters. It comes in both DIP and DSO packages and is suitable for wide range line input applications from 85 to 265 VAC. The IC supports converters in boost topology and it operates in continuous conduction mode (CCM) with average ...
... The ICE1PCS01/G is a 8 pin control IC for power factor correction converters. It comes in both DIP and DSO packages and is suitable for wide range line input applications from 85 to 265 VAC. The IC supports converters in boost topology and it operates in continuous conduction mode (CCM) with average ...
AL8807Q Description Pin Assignments
... LED current can be adjusted digitally, by applying a low frequency Pulse Width Modulated (PWM) logic signal to the CTRL pin to turn the device on and off. This will produce an average output current proportional to the duty cycle of the control signal. In particular, a PWM signal with a max resoluti ...
... LED current can be adjusted digitally, by applying a low frequency Pulse Width Modulated (PWM) logic signal to the CTRL pin to turn the device on and off. This will produce an average output current proportional to the duty cycle of the control signal. In particular, a PWM signal with a max resoluti ...
AD8561 Data Sheet
... The input common-mode voltage can be found as the average of the voltage at the two inputs of the device. To ensure the fastest response time, care should be taken not to allow the input common-mode voltage to exceed either of these voltages. The input bias current for the AD8561 is 3 μA. As with an ...
... The input common-mode voltage can be found as the average of the voltage at the two inputs of the device. To ensure the fastest response time, care should be taken not to allow the input common-mode voltage to exceed either of these voltages. The input bias current for the AD8561 is 3 μA. As with an ...
Transistor
.jpg?width=300){kind=spacer}
A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.